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Large Rashba spin-orbit coupling in metallic SrTaO$_3$ thin films
Authors:
Hikaru Okuma,
Yumiko Katayama,
Fukunobu Kadowaki,
Yuki Tokumoto,
Kazunori Ueno
Abstract:
Epitaxial thin films of SrTaO$_3$ with thickness ($t$) smaller than 74 nm were successfully fabricated on an insulator (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate. Films with $t$ above 8.6 nm showed metallic conduction. Both conductivity and a mobility showed a decrease with increasing $t$ above 42 nm, suggesting the instability of thick SrTaO$_3$ films. This instability was also suppor…
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Epitaxial thin films of SrTaO$_3$ with thickness ($t$) smaller than 74 nm were successfully fabricated on an insulator (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate. Films with $t$ above 8.6 nm showed metallic conduction. Both conductivity and a mobility showed a decrease with increasing $t$ above 42 nm, suggesting the instability of thick SrTaO$_3$ films. This instability was also supported by TEM image and XRD intensity. For the metallic films with $t$ below 25 nm, energy band splitting due to spin-orbit coupling ($Δ$$_{so}$) and Rashba parameter ($α$$_R$) were deduced from an analysis of a magnetoresistance using two-dimensional weak antilocalization theory. The values of $Δ$$_{so}$ ranged from 26 to 120 meV, which were the largest among other metallic oxide films, such as SrNbO$_3$, SrIrO$_3$, and La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin films, indicating that spin-orbit coupling in SrTaO$_3$ was the largest among the metallic perovskite oxides reported so far. The values of $α$$_R$ for our SrTaO$_3$ films ranged from $8.8 \times$10$^{-13}$ to $1.7 \times$10$^{-12}$ eV m, which were much larger than those reported for other metallic oxide thin films.
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Submitted 19 March, 2024;
originally announced March 2024.
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Anomalous upper critical field in the quasicrystal superconductor Ta$_{1.6}$Te
Authors:
Taichi Terashima,
Yuki Tokumoto,
Kotaro Hamano,
Takako Konoike,
Naoki Kikugawa,
Keiichi Edagawa
Abstract:
Superconductivity in quasicrystals poses a new challenge in condensed matter physics. We measured the resistance and ac magnetic susceptibility of a Ta$_{1.6}$Te dodecagonal quasicrystal, which is superconducting below $T_c \sim$ 1 K. We show that the upper critical field increases linearly with a large slope of $-$4.4 T/K with decreasing temperature down to 0.04 K, with no tendency to level off.…
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Superconductivity in quasicrystals poses a new challenge in condensed matter physics. We measured the resistance and ac magnetic susceptibility of a Ta$_{1.6}$Te dodecagonal quasicrystal, which is superconducting below $T_c \sim$ 1 K. We show that the upper critical field increases linearly with a large slope of $-$4.4 T/K with decreasing temperature down to 0.04 K, with no tendency to level off. The extrapolated zero-temperature critical field exceeds the Pauli limit by a factor of 2.3. We also observed flux-flow resistance with thermally activated behavior and an irreversibility field that is distinct from the upper critical field. We discuss these peculiarities in terms of the nonuniform superconducting gap and spin--orbit interaction in quasicrystal structures.
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Submitted 4 January, 2024;
originally announced January 2024.
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Superconductivity in a van der Waals layered quasicrystal
Authors:
Yuki Tokumoto,
Kotaro Hamano,
Sunao Nakagawa,
Yasushi Kamimura,
Shintaro Suzuki,
Ryuji Tamura,
Keiichi Edagawa
Abstract:
van der Waals (vdW) layered transition-metal chalcogenides are attracting significant attention owing to their fascinating physical properties. This group of materials consists of abundant members with various elements, having a variety of different structures. However, all vdW layered materials studied to date have been limited to crystalline materials, and the physical properties of vdW layered…
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van der Waals (vdW) layered transition-metal chalcogenides are attracting significant attention owing to their fascinating physical properties. This group of materials consists of abundant members with various elements, having a variety of different structures. However, all vdW layered materials studied to date have been limited to crystalline materials, and the physical properties of vdW layered quasicrystals have not yet been reported. Here, we report on the discovery of superconductivity in a vdW layered quasicrystal of Ta1.6Te. The electrical resistivity, magnetic susceptibility, and specific heat of the Ta1.6Te quasicrystal fabricated by reaction sintering, unambiguously validated the occurrence of bulk superconductivity at a transition temperature of ~1 K. This discovery can pioneer new research on assessing the physical properties of vdW layered quasicrystals as well as two-dimensional quasicrystals; moreover, it paves the way toward new frontiers of superconductivity in thermodynamically stable quasicrystals, which has been the predominant challenge facing condensed matter physics since the discovery of quasicrystals almost four decades ago.
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Submitted 20 July, 2023;
originally announced July 2023.
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Topological surface states hybridized with bulk states of Bi-doped PbSb2Te4 revealed in quasiparticle interference
Authors:
Yuya Hattori,
Keisuke Sagisaka,
Shunsuke Yoshizawa,
Yuki Tokumoto,
Keiichi Edagawa
Abstract:
Topological surface states of Bi-doped PbSb2Te4 [Pb(Bi0.20Sb0.80)2Te4] are investigated through analyses of quasiparticle interference (QPI) patterns observed by scanning tunneling microscopy. Interpretation of the experimental QPI patterns in the reciprocal space is achieved by numerical QPI simulations using two types of surface density of states produced by density functional theory calculation…
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Topological surface states of Bi-doped PbSb2Te4 [Pb(Bi0.20Sb0.80)2Te4] are investigated through analyses of quasiparticle interference (QPI) patterns observed by scanning tunneling microscopy. Interpretation of the experimental QPI patterns in the reciprocal space is achieved by numerical QPI simulations using two types of surface density of states produced by density functional theory calculations or a kp surface state model. We found that the Dirac point (DP) of the surface state appears in the bulk band gap of this material and, with the energy being away from the DP, the isoenergy contour of the surface state is substantially deformed or separated into segments due to hybridization with bulk electronic states. These findings provide a more accurate picture of topological surface states, especially at energies away from the DP, providing valuable insight into the electronic properties of topological insulators.
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Submitted 29 September, 2023; v1 submitted 24 May, 2023;
originally announced May 2023.
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Experimental verification of band convergence in Sr and Na codoped PbTe
Authors:
Yuya Hattori,
Shunsuke Yoshizawa,
Keisuke Sagisaka,
Yuki Tokumoto,
Keiichi Edagawa,
Takako Konoike,
Shinya Uji,
Taichi Terashima
Abstract:
Scanning tunneling microscopy and transport measurements have been performed to investigate the electronic structure and its temperature dependence in heavily Sr and Na codoped PbTe, which is recognized as one of the most promising thermoelectric materials. Our main findings are as follows: (i) Below T=4.5 K, all carriers are distributed in the first valence band at the L point (L band), which for…
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Scanning tunneling microscopy and transport measurements have been performed to investigate the electronic structure and its temperature dependence in heavily Sr and Na codoped PbTe, which is recognized as one of the most promising thermoelectric materials. Our main findings are as follows: (i) Below T=4.5 K, all carriers are distributed in the first valence band at the L point (L band), which forms tube-shaped Fermi surfaces with concave curvature. With Sr and Na do**, the dispersion of the L band changes, and the band gap increases from 200 meV to 300 meV. (ii) At T=4.5 K, the Fermi energy is located ~100 meV below the edge of the L band for the Sr/Na codoped PbTe. The second valence band at the Sigma point (Sigma band) is lower than the L band by 150 meV, which is significantly smaller than that of pristine PbTe (200 meV). The decrease in the band offset, leading to band convergence, provides a desirable condition for thermoelectric materials.(iii) With increasing temperature, the carrier distribution to the Sigma band starts at T=100 K and we estimate that about 50 percent of the total carriers are redistributed in the Sigma band at T=300 K.Our work demonstrates that scanning tunneling microscopy and angular dependent magnetoresistance measurements are particularly powerful tools to determine the electronic structure and carrier distribution. We believe that they will provide a bird's eye view of the do** strategy towards realizing high-efficiency thermoelectric materials.
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Submitted 28 September, 2023; v1 submitted 5 April, 2023;
originally announced April 2023.
