One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2$\times$1)
Authors:
Yoshiyuki Ohtsubo,
Naoki Tokumasu,
Hiroshi Watanabe,
Takuto Nakamura,
Patrick Le Fèvre,
François Bertran,
Masaki Imamura,
Isamu Yamamoto,
Junpei Azuma,
Kazutoshi Takahashi,
Shin-ichi Kimura
Abstract:
Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the pr…
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Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the projected bulk bandgap. Circular dichroism of two-photon ARPES and density-functional-theory calculation indicate clear spin and orbital polarization of the surface states consistent with the giant sizes of Rashba-type SOI, derived from the strong contribution of heavy Bi atoms. The surface conduction band above $E_{\rm F}$ forms a nearly straight constant-energy contour, suggesting its suitability for application in further studies of one-dimensional electronic systems with strong SOI. A tight-binding model calculation based on the obtained surface electronic structure successfully reproduces the surface band dispersions and predicts possible one- to two-dimensional crossover in the temperature range of 60--100~K.
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Submitted 3 June, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
Fermi level tuning of one-dimensional giant Rashba system on a semiconductor substrate: Bi/GaSb(110)-(2x1)
Authors:
Takuto Nakamura,
Yoshiyuki Ohtsubo,
Naoki Tokumasu,
Patrick Le Fèvre,
François Bertran,
Shin-ichiro Ideta,
Kiyohisa Tanaka,
Kenta Kuroda,
Koichiro Yaji,
Ayumi Harasawa,
Shik Shin,
Fumio Komori,
Shin-ichi Kimura
Abstract:
We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the…
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We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the $\barΓ$ and $\bar{\rm Y}$ points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on semiconductor substrate makes this system a promising candidate for future researches in low-dimensional spintronic phenomena.
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Submitted 2 December, 2019; v1 submitted 29 September, 2019;
originally announced September 2019.
