All-Electrical Skyrmionic Bits in a Chiral Magnetic Tunnel Junction
Authors:
Shaohai Chen,
Pin Ho,
James Lourembam,
Alexander K. J. Toh,
Jifei Huang,
Xiaoye Chen,
Hang Khume Tan,
Sherry K. L. Yap,
Royston J. J. Lim,
Hui Ru Tan,
T. S. Suraj,
Yeow Teck Toh,
Idayu Lim,
**g Zhou,
Hong **g Chung,
Sze Ter Lim,
Anjan Soumyanarayanan
Abstract:
Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) host…
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Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multi-modal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal - 20-70% relative to uniform states - corresponds directly to skyrmion size. Further, the MTJ exploits complementary mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three nonvolatile electrical states. Crucially, it can write and delete skyrmions using current densities 1,000 times lower than state-of-the-art. These results provide a platform to incorporate readout and manipulation of skyrmionic bits across myriad device architectures, and a springboard to harness chiral spin textures for multi-bit memory and unconventional computing.
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Submitted 15 February, 2023;
originally announced February 2023.
