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TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices
Authors:
Shunsuke Honda,
Kazuhiko Hara,
Daisuke Sekigawa,
Bipin Subedi,
Mari Asano,
Naoshi Tobita,
Wataru Aoyagi,
Yasuo Arai,
Akimasa Ishikawa,
Yoshimasa Ono,
Itaru Ushiki,
SOI Collaboration
Abstract:
We are develo** double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pix…
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We are develo** double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.
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Submitted 24 July, 2015;
originally announced July 2015.
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Compensation for TID Damage in SOI Pixel Devices
Authors:
Naoshi Tobita,
Shunsuke Honda,
Kazuhiko Hara,
Wataru Aoyagi,
Yasuo Arai,
Toshinobu Miyoshi,
Ikuo Kurachi,
Takaki Hatsui,
Togo Kudo,
Kazuo Kobayashi
Abstract:
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath th…
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We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100~Gy to 2~MGy.
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Submitted 21 July, 2015;
originally announced July 2015.
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Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor
Authors:
Mari Asano,
Kazuhiko Hara,
Daisuke Sekigawa,
Shunsuke Honda,
Naoshi Tobita,
Yasuo Arai,
Toshinobu Miyoshi,
Ikuo Kurachi
Abstract:
We are develo** monolithic pixel sensors based on a 0.2 $μ$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in ad…
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We are develo** monolithic pixel sensors based on a 0.2 $μ$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in addition. We studied the recovery from TID damage induced by $\mathrm{^{60}Co}~γ$'s and other characteristics of an Integration-type Double SOI sensor. The Double SOI sensor irradiated to 100 kGy showed a response for IR laser similar to of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. We conclude that the Double SOI sensor is radiation hard enough to be used in HEP experiments in harsh radiation environments such as at Bell II or ILC.
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Submitted 20 July, 2015;
originally announced July 2015.
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Coherent heavy quasiparticles in CePt5 surface alloy
Authors:
M. Klein,
A. Nuber,
H. Schwab,
N. Tobita,
M. Higashiguchi,
J. Jiang,
S. Fukuda,
K. Tanaka,
K. Shimada,
M. Mulazzi,
F. F. Assaad,
F. Reinert
Abstract:
We report on the results of a high-resolution angle-resolved photoemission (ARPES) study on the ordered surface alloy CePt5. The temperature dependence of the spectra show the formation of the coherent low-energy heavy-fermion band near the Fermi level. This experimental data is supported by a multi-band model calculation in the framework of the dynamical mean field theory (DMFT).
We report on the results of a high-resolution angle-resolved photoemission (ARPES) study on the ordered surface alloy CePt5. The temperature dependence of the spectra show the formation of the coherent low-energy heavy-fermion band near the Fermi level. This experimental data is supported by a multi-band model calculation in the framework of the dynamical mean field theory (DMFT).
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Submitted 12 April, 2011;
originally announced April 2011.
