Showing 1–24 of 24 results for author: Toberer, E S

Leveraging Language Representation for Material Recommendation, Ranking, and Exploration

Authors: Jiaxing Qu, Yuxuan Richard Xie, Kamil M. Ciesielski, Claire E. Porter, Eric S. Toberer, Elif Ertekin

Abstract: Data-driven approaches for material discovery and design have been accelerated by emerging efforts in machine learning. However, general representations of crystals to explore the vast material search space remain limited. We introduce a material discovery framework that uses natural language embeddings derived from language models as representations of compositional and structural features. The d… ▽ More Data-driven approaches for material discovery and design have been accelerated by emerging efforts in machine learning. However, general representations of crystals to explore the vast material search space remain limited. We introduce a material discovery framework that uses natural language embeddings derived from language models as representations of compositional and structural features. The discovery framework consists of a joint scheme that first recalls relevant candidates, and next ranks the candidates based on multiple target properties. The contextual knowledge encoded in language representations conveys information about material properties and structures, enabling both representational similarity analysis for recall, and multi-task learning to share information across related properties. By applying the framework to thermoelectrics, we demonstrate diversified recommendations of prototype structures and identify under-studied high-performance material spaces. The recommended materials are corroborated by first-principles calculations and experiments, revealing novel materials with potential high performance. Our framework provides a task-agnostic means for effective material recommendation and can be applied to various material systems. △ Less

Submitted 19 May, 2023; v1 submitted 1 May, 2023; originally announced May 2023.

YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$, vanadium-based kagome metals with Yb$^{2+}$ and Eu$^{2+}$ zig-zag chains

Authors: Brenden R. Ortiz, Ganesh Pokharel, Malia Gundayao, Hong Li, Farnaz Kaboudvand, Linus Kautzsch, Suchismita Sarker, Jacob P. C. Ruff, Tom Hogan, Steven J. Gomez Alvarado, Paul M. Sarte, Guang Wu, Tara Braden, Ram Seshadri, Eric S. Toberer, Ilija Zeljkovic, Stephen D. Wilson

Abstract: Here we present YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$, two new compounds exhibiting slightly distorted vanadium-based kagome nets interleaved with zig-zag chains of divalent Yb$^{2+}$ and Eu$^{2+}$ ions. Single crystal growth methods are reported alongside magnetic, electronic, and thermodynamic measurements. YbV$_3$Sb$_4$ is a nonmagnetic metal with no collective phase transitions observed between 60mK… ▽ More Here we present YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$, two new compounds exhibiting slightly distorted vanadium-based kagome nets interleaved with zig-zag chains of divalent Yb$^{2+}$ and Eu$^{2+}$ ions. Single crystal growth methods are reported alongside magnetic, electronic, and thermodynamic measurements. YbV$_3$Sb$_4$ is a nonmagnetic metal with no collective phase transitions observed between 60mK and 300K. Conversely, EuV$_3$Sb$_4$ is a magnetic kagome metal exhibiting easy-plane ferromagnetic-like order below $T_\text{C}$=32K with signatures of noncollinearity under low field. Our discovery of YbV$_3$Sb$_4$ and EuV$_3$Sb$_4$ demonstrate another direction for the discovery and development of vanadium-based kagome metals while incorporating the chemical and magnetic degrees of freedom offered by a rare-earth sublattice. △ Less

Submitted 16 August, 2023; v1 submitted 23 February, 2023; originally announced February 2023.

Origin of ultra-low thermal conductivity in unconventional clathrates: Strong scattering from extremely low-frequency rattling modes

Authors: Kamil M. Ciesielski, Brenden R. Ortiz, Lidia C. Gomes, Vanessa Meschke, Jesse M. Adamczyk, Tara L. Braden, Dariusz Kaczorowski, Elif Ertekin, Eric S. Toberer

Abstract: Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity ($0.4-0.6$ Wm$^{-1}$K$^{-1}$ at 525 K). The materials of interest are: the unconventional type-XI… ▽ More Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity ($0.4-0.6$ Wm$^{-1}$K$^{-1}$ at 525 K). The materials of interest are: the unconventional type-XI clathrate K$_{58}$Zn$_{122}$Sb$_{207}$, the tunnel compound K$_{6.9}$Zn$_{21}$Sb$_{16}$, and the type-I clathrate K$_8$Zn$_{15.5}$Cu$_{2.5}$Sb$_{28}$ discovered herein. Calculations of the phonon dispersions show that the type-XI compound exhibits localized (i.e., rattling) phonon modes with unusually low frequencies that span the entire acoustic regime. In contrast, rattling in the type-I clathrate is observed only at higher frequencies, and no rattling modes are present in the tunnel structure. Modeling reveals that low-frequency rattling modes profoundly limit the acoustic scattering time; the scattering time of the type-XI clathrate is half that of the type-I clathrate and a quarter of the tunnel compound. For all three materials, the thermal conductivities are additionally suppressed by soft framework bonding that lowers the acoustic group velocities, and structural complexity that leads to diffusonic character of the optical modes. Understanding details of thermal transport in structurally complex materials will be crucial for develo** the next generation of thermoelectrics. △ Less

Submitted 25 January, 2023; originally announced January 2023.

Hydrothermal synthesis of ordered corkite, PbFe3(PO4)(SO4)(OH)6, a S = 5/2 kagomé antiferromagnet

Authors: Austin M. Ferrenti, Vanessa Meschke, Shreenanda Ghosh, Jackson Davis, Natalia Drichko, Eric S. Toberer, Tyrel M. McQueen

Abstract: Corkite, PbFe3(PO4)(SO4)(OH)6, an understudied relative of the jarosite family of Heisenberg antiferromagnets, has been synthesized and its magnetic properties characterized for the first time. Relative to natural samples, synthetic corkite displays signatures in both infrared and Raman spectra of a more ordered arrangement of polyanion groups about the kagomé sublattice that retains inversion sym… ▽ More Corkite, PbFe3(PO4)(SO4)(OH)6, an understudied relative of the jarosite family of Heisenberg antiferromagnets, has been synthesized and its magnetic properties characterized for the first time. Relative to natural samples, synthetic corkite displays signatures in both infrared and Raman spectra of a more ordered arrangement of polyanion groups about the kagomé sublattice that retains inversion symmetry. Magnetic susceptibility measurements reveal that dried corkite undergoes a transition to a long-range, antiferromagnetically-ordered state below TN = 48 K, lower than that observed in the majority of jarosite phases, and indicative of further spin frustration. Curie-Weiss fitting of the measured magnetic susceptibility yields an effective magnetic moment of peff = 6.29(1) muB/Fe^3+ and theta_CW = -526.0(1.1) K, analogous to that observed in similar high-spin Fe^3+ systems, and indicative of strong antiferromagnetic coupling. Estimation of the change in magnetic entropy as a function of temperature from T = 0 K to T = 195 K, dS_mag = 14.86 J/mol_Fe^3+ K, is also in good agreement with the dS_mag = Rln(2S+1) = 14.9 J/mol K expected for a S = 5/2 system. In comparison to the pure jarosites, where both structure and magnetism remain largely invariant upon a variety of chemical substitutions, the replacement of one sulfate group per formula unit with a higher-valent phosphate group applies additional steric and electronic pressure on the kagomé lattice in corkite, further frustrating the magnetic ground state of the material. Corkite thus represents both an outlier in the known body of jarosite-type materials, and an illustration of how existing structures may be further strained in the development of highly frustrated magnetic systems. △ Less

Submitted 8 August, 2022; originally announced August 2022.

Comments: 27 pages, 5 figures, 4 tables

Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

Authors: Andrea Crovetto, Jesse M. Adamczyk, Rekha R. Schnepf, Craig L. Perkins, Hannes Hempel, Sage R. Bauers, Eric S. Toberer, Adele C. Tamboli, Thomas Unold, Andriy Zakutayev

Abstract: With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be resp… ▽ More With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic do** by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C do** under B-rich conditions. We also confirm that bipolar do** is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality. △ Less

Submitted 15 December, 2021; v1 submitted 14 December, 2021; originally announced December 2021.

Search and Structural Featurization of Magnetically Frustrated Kagomé Lattices

Authors: Vanessa Meschke, Prashun Gorai, Vladan Stevanović, Eric S. Toberer

Abstract: We have searched nearly 40,000 inorganic solids in the Inorganic Crystal Structural Database to identify compounds containing a transition metal or rare earth kagomé sublattice, a geometrically magnetically frustrated lattice, ultimately identifying $\sim$500 materials. A broad analysis of the chemical and structural trends of these materials shows three types of kagomé sheet stacking and several… ▽ More We have searched nearly 40,000 inorganic solids in the Inorganic Crystal Structural Database to identify compounds containing a transition metal or rare earth kagomé sublattice, a geometrically magnetically frustrated lattice, ultimately identifying $\sim$500 materials. A broad analysis of the chemical and structural trends of these materials shows three types of kagomé sheet stacking and several classes of magnetic complexity. Following the search and classification, we rapidly screen the magnetic properties of a subset of the materials using density functional theory to eliminate those that are unlikely to exhibit magnetic frustration. From the results of our computational screening, we rediscover six materials that have previously been explored for their low temperature magnetic behavior, albeit showing symmetry breaking distortions, spin glass behavior, or magnetic ordering. However, all are materials with antiferromagnetic behavior, which we correctly predict. Finally, we also report three materials that appear to be unexplored for their magnetic properties. △ Less

Submitted 10 March, 2021; originally announced March 2021.

The Efficacy of the Method of Four Coefficients to Determine Charge Carrier Scattering

Authors: Caitlin M. Crawford, Erik A. Bensen, Haley A. Vinton, Eric S. Toberer

Abstract: The investigation of the electronic properties of semiconductors is inherently challenging due to the ensemble averaging of fundamentals to transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements). Here, we investigate the incorporation of a fourth measurement of electronic transport, the Nernst coefficient, into the analysis, termed the method of four-coefficients. T… ▽ More The investigation of the electronic properties of semiconductors is inherently challenging due to the ensemble averaging of fundamentals to transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements). Here, we investigate the incorporation of a fourth measurement of electronic transport, the Nernst coefficient, into the analysis, termed the method of four-coefficients. This approach yields the Fermi level, effective mass, scattering exponent, and relaxation time. We begin with a review of the underlying mathematics and investigate the map** between the four-dimensional material property and transport coefficient spaces. We then investigate how the traditional single parabolic band method yields a single, potentially incorrect point on the solution sub-space. This uncertainty can be resolved through Nernst coefficient measurements and we map the span of the ensuing sub-space. We conclude with an investigation of how sensitive the analysis of transport coefficients is to experimental error for different sample types. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. Applied 16, 024004 (2021)

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells

Authors: William A. Callahan, Dudong Feng, Zhuomin M. Zhang, Eric S. Toberer, Andrew J. Ferguson, Eric J. Tervo

Abstract: Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter/absorber structures can be computed using multilayer fluctuational electrodynamics. These two types… ▽ More Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter/absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption/luminescence and charge carrier generation/recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge carrier models to predict device performance. To examine this assumption, we develop a fully-coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results to past methods that do not consider cross-influences between charge and radiation transport, we find that a fully-coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. Because these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems. △ Less

Submitted 12 July, 2021; v1 submitted 12 January, 2021; originally announced January 2021.

Comments: 21 pages, 8 figures

Journal ref: Phys. Rev. Applied 15, 054035 (2021)

Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5

Authors: Yaojia Wang, Shuoying Yang, Pranava K. Sivakumar, Brenden R. Ortiz, Samuel M. L. Teicher, Heng Wu, Abhay K. Srivastava, Chirag Garg, Defa Liu, Stuart S. P. Parkin, Eric S. Toberer, Tyrel McQueen, Stephen D. Wilson, Mazhar N. Ali

Abstract: Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layer… ▽ More Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layered topological metal with a Kagome net of vanadium. Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and induced superconductivity over long junction lengths. Through magnetoresistance and current vs. phase measurements, we observed magnetic field swee** direction dependent magnetoresistance, and an anisotropic interference pattern with a Fraunhofer pattern for in-plane magnetic field, but a suppression of critical current for out-of-plane magnetic field. These results indicate an anisotropic internal magnetic field in K1-xV3Sb5 which influences the superconducting coupling in the junction, possibly giving rise to spin-triplet superconductivity. In addition, the observation of long-lived fast oscillations shows evidence of spatially localized conducting channels arising from edge states. These observations pave the way for studying unconventional superconductivity and Josephson device based on Kagome metals with electron correlation and topology. △ Less

Submitted 26 January, 2023; v1 submitted 10 December, 2020; originally announced December 2020.

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Authors: Ann L. Greenaway, Celeste L. Melamed, M. Brooks Tellekamp, Rachel Woods-Robinson, Eric S. Toberer, James R. Neilson, Adele C. Tamboli

Abstract: Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N2, the number of predicted nitride compounds dwarfs those that have been synthesized, offering a breadth of opportunity for exploration. This review sum… ▽ More Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N2, the number of predicted nitride compounds dwarfs those that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise. △ Less

Submitted 15 October, 2020; originally announced October 2020.

Understanding Cu Incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ Structure using Resonant X-ray Diffraction

Authors: Ben L. Levy-Wendt, Brenden R. Ortiz, Lìdia C. Gomes, Kevin H. Stone, Donata Passarello, Elif Ertekin, Eric S. Toberer, Michael F. Toney

Abstract: The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crysta… ▽ More The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $\mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $\mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $\mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering. △ Less

Submitted 9 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Materials 5, 015402 (2021)

Solar Thermoradiative-Photovoltaic Energy Conversion

Authors: Eric J. Tervo, William A. Callahan, Eric S. Toberer, Myles A. Steiner, Andrew J. Ferguson

Abstract: We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its e… ▽ More We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its emitted light is absorbed by the photovoltaic cell to provide an additional photocurrent. Based on the principle of detailed balance, we calculate a limiting solar conversion efficiency of 85% for fully concentrated sunlight and 45% for one sun with an absorber and single-junction cells of equal areas. Ideal and nonideal solar thermoradiative-photovoltaic systems outperform solar thermophotovoltaic converters for low bandgaps and practical absorber temperatures. Their performance enhancement results from a high tolerance to nonradiative generation/recombination and an ability to minimize radiative heat losses. We show that a realistic device with all major losses could achieve increases in solar conversion efficiency by up to 7.9% (absolute) compared to a solar thermophotovoltaic device under low optical concentration. Our results indicate that these converters could serve as efficient heat engines for low cost single axis tracking systems. △ Less

Submitted 1 September, 2020; v1 submitted 22 July, 2020; originally announced July 2020.

Comments: 20 pages, 7 figures

On the Dopability of Semiconductors and Governing Material Properties

Authors: Anuj Goyal, Prashun Gorai, Shashwat Anand, Eric S. Toberer, G. Jeffrey Snyder, Vladan Stevanovic

Abstract: To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit strong preference toward allowing either p- or n-type do**, but not both. In this work, we develop a model description of… ▽ More To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit strong preference toward allowing either p- or n-type do**, but not both. In this work, we develop a model description of semiconductor dopability and formulate design principles in terms of governing materials properties. Our approach, which builds upon the semiconductor defect theory applied to a suitably devised (tight-binding) model system, reveals analytic relationships between intrinsic materials properties and the semiconductor dopability, and elucidates the role and the insufficiency of previously suggested descriptors such as the absolute band edge positions. We validate our model against a number of classic binary semiconductors and discuss its extension to more complex chemistries and the utility in large-scale material searches. △ Less

Submitted 18 May, 2020; originally announced May 2020.

Journal ref: Chem. Mater. 2020

Anomalous, anomalous Hall effect in the layered, Kagome, Dirac semimetal KV$_3$Sb$_5$

Authors: Shuo-Ying Yang, Yaojia Wang, Brenden R. Ortiz, Defa Liu, Jacob Gayles, Elena Derunova, Rafael Gonzalez-Hernandez, Libor Smejkal, Yulin Chen, Stuart S. P. Parkin, Stephen D. Wilson, Eric S. Toberer, Tyrel McQueen, Mazhar N. Ali

Abstract: The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferroma… ▽ More The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE mechanisms known, and material examples are highly sought after, however in the highly conductive (skew scattering) regime the focus has centered around ferromagnetic metals. Here we report the observation of a giant extrinsic AHE in KV$_3$Sb$_5$, an exfoliable, Dirac semimetal with a Kagome layer of Vanadium atoms. Although there has been no reports of magnetic ordering down to 0.25 K, the anomalous Hall conductivity (AHC) reaches $\approx$ 15,507 $Ω^{-1}$cm$^{-1}$ with an anomalous Hall ratio (AHR) of $\approx$ 1.8$ \%$; an order of magnitude larger than Fe. Defying expectations from skew scattering theory, KV$_3$Sb$_5$ shows an enhanced skew scattering effect that scales quadratically, not linearly, with the longitudinal conductivity ($σ_{xx}$), opening the possibility of reaching an anomalous Hall angle (AHA) of 90$^{\circ}$ in metals; an effect thought reserved for quantum anomalous Hall insulators. This observation raises fundamental questions about the AHE and opens a new frontier for AHE (and correspondingly SHE) exploration, stimulating investigation in a new direction of materials, including metallic geometrically frustrated magnets, spin-liquid candidates, and cluster magnets. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Blue-Green Emission from Epitaxial Yet Cation-Disordered ZnGeN$_{2-x}$O$_x$

Authors: C. L. Melamed, M. B. Tellekamp, J. S. Mangum, J. D. Perkins, P. Dippo, E. S. Toberer, A. C. Tamboli

Abstract: ZnGeN$_2$ offers a low-cost alternative to InGaN with the potential for bandgap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here, we investigate the structure and optoelectronic properties of an epitaxial ZnGeN$_{2-x}$O$_{x}$ thin film library grown by combinatorial co-sputtering on c-Al… ▽ More ZnGeN$_2$ offers a low-cost alternative to InGaN with the potential for bandgap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here, we investigate the structure and optoelectronic properties of an epitaxial ZnGeN$_{2-x}$O$_{x}$ thin film library grown by combinatorial co-sputtering on c-Al$_2$O$_3$. Samples exhibit X-ray diffraction patterns and X-ray pole figures characteristic of a wurtzite (cation-disordered) structure with the expected 6-fold in-plane symmetry. Transmission electron microscopy reveals a semi-coherent interface with periodic dislocations that relieve strain from the large lattice mismatch, and confirms the in-plane and out-of-plane crystallographic orientation. Room-temperature photoluminescence exhibits peaks between 2.4 and 2.8 eV which are consistent with a sharp absorption onset observed by UV-vis spectroscopy. These results demonstrate low-cost synthesis of optically active yet cation disordered ZnGeN$_{2-x}$O$_{x}$, indicating a path toward application as a blue-green emitter. △ Less

Submitted 26 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. Materials 3, 051602(R), 2019

Effective $n$-type Do** of Mg$_3$Sb$_2$ with Group-3 Elements

Authors: Prashun Gorai, Eric S. Toberer, Vladan Stevanovic

Abstract: The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type do** of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as extrinsic dopants. Using first-principles defect calculations, we previously predicted that higher electron concentrations ($\sim10^{20}$ cm$^{-3}$) can be ach… ▽ More The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type do** of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as extrinsic dopants. Using first-principles defect calculations, we previously predicted that higher electron concentrations ($\sim10^{20}$ cm$^{-3}$) can be achieved in Mg$_3$Sb$_2$ by do** with La instead of Se or Te. Subsequent experiments showed that free electron concentration in La-doped Mg$_3$Sb$_{2-x}$Bi$_x$ indeed exceeds those in the Te-doped material. Herein, we further investigate $n$-type do** of Mg$_3$Sb$_2$ and predict that, in addition to La, other group-3 elements (Sc, Y) are also effective as $n$-type dopants; Y is as good as La while Sc slightly less. Overall, we find that do** with any group-3 elements should lead to higher free electron concentrations than do** with chalcogens. △ Less

Submitted 16 November, 2018; v1 submitted 18 October, 2018; originally announced October 2018.

Understanding and Control of Bipolar Do** in Copper Nitride

Authors: Angela N Fioretti, Craig P Schwartz, John Vinson, Dennis Nordlund, David Prendergast, Adele C Tamboli, Christopher M Caskey, Filip Tuomisto, Florence Linez, Steven T Christensen, Eric S Toberer, Stephan Lany, Andriy Zakutayev

Abstract: Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar do** behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the l… ▽ More Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar do** behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 10^17 electrons/cm^3 for low growth temperature (~35 degrees C) and p-type with 10^15-10^16 holes/cm^3 for elevated growth temperatures (50-120 degrees C). Mobility for both types of Cu3N was ~0.1-1 cm^2/Vs. Additionally, temperature- dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that V_Cu defects form preferentially in p-type Cu3N while Cu_i defects form preferentially in n-type Cu3N. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar do** in Cu3N, that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials, and provide a framework that can be applied when considering the properties of such materials in general. △ Less

Submitted 13 January, 2016; originally announced January 2016.

Comments: 12 pages, 8 figures, accepted manuscript

Effects of Low Temperature Annealing on the Transport Properties of Zinc Tin Nitride

Authors: Angela N. Fioretti, Eric S. Toberer, Andriy Zakutayev, Adele C. Tamboli

Abstract: ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1 eV based on cation disorder. One important challenge to the further development of this material for photovoltaics (PV) is to reliably synthesize films with carrier density less than or equal to 10^17 electrons/cm^3. In this work, we perform… ▽ More ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1 eV based on cation disorder. One important challenge to the further development of this material for photovoltaics (PV) is to reliably synthesize films with carrier density less than or equal to 10^17 electrons/cm^3. In this work, we perform a systematic annealing study on compositionally-graded Zn-Sn-N thin films to determine the effects on carrier density and transport of such post-growth treatment. We find that annealing up to 6 hr under an activated nitrogen atmosphere results in a reduction in carrier density by ~80% for zinc-rich films, and by ~50% for stoichiometric films. However, we also find that annealing reduces mobility as a function of increasing annealing time. This result suggests that initial film disorder hampers the benefits to film quality that should have been gained through annealing. This finding highlights that carefully managed initial growth conditions will be necessary to obtain PV-quality ZnSnN2 absorber films. △ Less

Submitted 25 June, 2015; originally announced June 2015.

Comments: Submitted to the IEEE Journal of Photovoltaics, 5 pages, 5 figures

Solar energy conversion properties and defect physics of ZnSiP$_2$

Authors: Aaron D. Martinez, Emily L. Warren, Prashun Gorai, Kasper A. Borup, Darius Kuciauskas, Patricia C. Dippo, Brenden R. Ortiz, Robin T. Macaluso, Sau D. Nguyen, Ann L. Greenaway, Shannon W. Boettcher, Andrew G. Norman, Vladan Stevanović, Eric S. Toberer, Adele C. Tamboli

Abstract: Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with… ▽ More Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials. △ Less

Submitted 29 December, 2015; v1 submitted 17 June, 2015; originally announced June 2015.

Comments: As accepted by EES on December 11th, 2015

Combinatorial Insights into Do** Control and Transport Properties of Zinc Tin Nitride

Authors: Angela N. Fioretti, Andriy Zakutayev, Helio Moutinho, Celeste Melamed, John D. Perkins, Andrew G. Norman, Mowafak Al-Jassim, Eric S. Toberer, Adele C. Tamboli

Abstract: ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability. Despite these desirable properties, discrepancies in the fundamental bandgap and degenerate \emph{n}-type carrier density have been prevalent issues in the limited amount of literature available on this material. Using… ▽ More ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability. Despite these desirable properties, discrepancies in the fundamental bandgap and degenerate \emph{n}-type carrier density have been prevalent issues in the limited amount of literature available on this material. Using a combinatorial RF co-sputtering approach, we have been able to explore a growth-temperature-composition space for Zn(1+x)Sn(1-x)N(2) over the ranges 35-340 degrees C and 0.30-0.75 Zn/(Zn+Sn). In this way, we were able to identify an optimal set of deposition parameters for obtaining as-deposited films with wurtzite crystal structure and carrier density as low as 1.8 x 10^(18) cm^(-3). Films grown at 230 degrees C with Zn/(Zn+Sn) = 0.60 were found to have the largest grain size overall (70 nm diameter on average) while also exhibiting low carrier density (3 x 10^(18) cm^(-3)) and high mobility (8.3 cm^(2) V^(-1) s^(-1)). Furthermore, we report evidence of a Burstein-Moss shift widening the apparent bandgap as cation composition becomes increasingly Sn-rich, and tunable carrier density as a function of cation composition (lower carrier density for higher Zn content), which suggests the formation of defect complexes. Collectively, these findings provide important insight into the fundamental properties of the Zn-Sn-N material system, and also highlight the potential to utilize ZnSnN2 for photovoltaics. △ Less

Submitted 26 May, 2015; v1 submitted 7 April, 2015; originally announced April 2015.

Comments: Version submitted to Energy & Environmental Science. 14 pages, 10 figures

Effects of disorder on carrier transport in Cu$_2$SnS$_3$

Authors: Lauryn L. Baranowski, Kevin McLaughlin, Pawel Zawadzki, Stephan Lany, Andrew Norman, Hannes Hempel, Rainer Eichberger, Thomas Unold, Eric S. Toberer, Andriy Zakutayev

Abstract: In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques… ▽ More In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu$_2$SnS$_3$ thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu$_2$SnS$_3$. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu$_2$SnS$_3$ displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu$_2$SnS$_3$-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Improved Thermoelectric Cooling Based on the Thomson Effect

Authors: G. Jeffrey Snyder, Raghav Khanna, Eric S. Toberer, Nicholas A. Heinz, Wolfgang Seifert

Abstract: Traditional thermoelectric Peltier coolers exhibit a cooling limit which is primarily determined by the figure of merit, zT. Rather than a fundamental thermodynamic limit, this bound can be traced to the difficulty of maintaining thermoelectric compatibility. Self-compatibility locally maximizes the cooler's coefficient of performance for a given zT and can be achieved by adjusting the relative ra… ▽ More Traditional thermoelectric Peltier coolers exhibit a cooling limit which is primarily determined by the figure of merit, zT. Rather than a fundamental thermodynamic limit, this bound can be traced to the difficulty of maintaining thermoelectric compatibility. Self-compatibility locally maximizes the cooler's coefficient of performance for a given zT and can be achieved by adjusting the relative ratio of the thermoelectric transport properties that make up zT. In this study, we investigate the theoretical performance of thermoelectric coolers that maintain self-compatibility across the device. We find such a device behaves very differently from a Peltier cooler, and term self-compatible coolers "Thomson coolers" when the Fourier heat divergence is dominated by the Thomson, as opposed to the Joule, term. A Thomson cooler requires an exponentially rising Seebeck coefficient with increasing temperature, while traditional Peltier coolers, such as those used commercially, have comparatively minimal change in Seebeck coefficient with temperature. When reasonable material property bounds are placed on the thermoelectric leg, the Thomson cooler is predicted to achieve approximately twice the maximum temperature drop of a traditional Peltier cooler with equivalent figure of merit (zT). We anticipate the development of Thomson coolers will ultimately lead to solid state cooling to cryogenic temperatures. △ Less

Submitted 16 June, 2012; v1 submitted 22 November, 2011; originally announced November 2011.

Comments: The Manuscript has been revised for publication in PRB

Entropic Stabilization and Retrograde Solubility in Zn4Sb3

Authors: Gregory S. Pomrehn, Eric S. Toberer, G. Jeffrey Snyder, Axel van de Walle

Abstract: Zn4Sb3 is shown to be entropically stabilized versus decomposition to Zn and ZnSb though the effects of configurational disorder and phonon free energy. Single phase stability is predicted for a range of compositions and temperatures. Retrograde solubility of Zn is predicted on the two-phase boundary region between Zn4Sb3 and Zn. The complex temperature dependent solubility can be used to explain… ▽ More Zn4Sb3 is shown to be entropically stabilized versus decomposition to Zn and ZnSb though the effects of configurational disorder and phonon free energy. Single phase stability is predicted for a range of compositions and temperatures. Retrograde solubility of Zn is predicted on the two-phase boundary region between Zn4Sb3 and Zn. The complex temperature dependent solubility can be used to explain the variety of nanoparticle formation observed in the system: formation of ZnSb on the Sb rich side, Zn on the far Zn rich side and nano-void formation due to Zn precipitates being reabsorbed at lower temperatures. △ Less

Submitted 22 October, 2010; originally announced October 2010.

Comments: 5 pages, 5 figures

Magnetodielectric coupling in Mn3O4

Authors: R. Tackett, G. Lawes, B. C. Melot, M. Grossman, E. S. Toberer, R. Seshadri

Abstract: We have investigated the dielectric anomalies associated with spin ordering transitions in the tetragonal spinel Mn$_3$O$_4$, using thermodynamic, magnetic, and dielectric measurements. We find that two of the three magnetic ordering transitions in Mn$_3$O$_4$ lead to decreases in the temperature dependent dielectric constant at zero applied field. Applying a magnetic field to the polycrystallin… ▽ More We have investigated the dielectric anomalies associated with spin ordering transitions in the tetragonal spinel Mn$_3$O$_4$, using thermodynamic, magnetic, and dielectric measurements. We find that two of the three magnetic ordering transitions in Mn$_3$O$_4$ lead to decreases in the temperature dependent dielectric constant at zero applied field. Applying a magnetic field to the polycrystalline sample leaves these two dielectric anomalies practically unchanged, but leads to an increase in the dielectric constant at the intermediate spin-ordering transition. We discuss possible origins for this magnetodielectric behavior in terms of spin-phonon coupling. Band structure calculations suggest that in its ferrimagnetic state, Mn$_3$O$_4$ corresponds to a semiconductor with no orbital degeneracy due to strong Jahn-Teller distortion. △ Less

Submitted 26 March, 2007; originally announced March 2007.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 76, 024409 (2007) (6 pages)