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Non-trivial topology in rare-earth monopnictides from dimensionality reduction
Authors:
Dai Q. Ho,
Ruiqi Hu,
D. Quang To,
Garnett W. Bryant,
Anderson Janotti
Abstract:
Thin films of rare-earth monopnictide semimetals are expected to turn into semiconductors due to quantum confinement effect, which lifts the overlap between electron pockets at Brillouin zone edges and hole pockets at the zone center. Instead, taking non-magnetic LaSb as an example, we find the emergence of a quantum spin Hall insulator phase in LaSb(001) films as the thickness is reduced to 7, 5,…
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Thin films of rare-earth monopnictide semimetals are expected to turn into semiconductors due to quantum confinement effect, which lifts the overlap between electron pockets at Brillouin zone edges and hole pockets at the zone center. Instead, taking non-magnetic LaSb as an example, we find the emergence of a quantum spin Hall insulator phase in LaSb(001) films as the thickness is reduced to 7, 5, or 3 monolayers. This is attributed to a strong quantum confinement effect on the in-plane electron pockets, and the lack of quantum confinement on the out-of-plane pocket in reciprocal space projected onto zone center, leading to a band inversion. Spin-orbit coupling opens a sizeable non-trivial gap in the band structure of the thin films. Such effect is shown to be general in rare-earth monopnictides and may lead to interesting phenomena when coupled with the 4f magnetic moments present in other members of this family of materials.
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Submitted 3 February, 2023;
originally announced February 2023.
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Phonon-mediated strong coupling between a three-dimensional topological insulator and a two-dimensional antiferromagnetic material
Authors:
D. Quang To,
Weipeng Wu,
Subhash Bhatt,
Yongchen Liu,
Anderson Janotti,
Joshua M. O. Zide,
Mark J. H. Ku,
John Q. Xiao,
M. Benjamin Jungfleisch,
Stephanie Law,
Matthew F. Doty
Abstract:
Van der Waals antiferromagnetic and topological insulator materials provide powerful platforms for modern optical, electronic, and spintronic devices applications. The interaction between an antiferromagnet (AFM) and a topological insulator (TI), if sufficiently strong, could offer emergent hybrid material properties that enable new functionality exceeding what is possible in any individual materi…
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Van der Waals antiferromagnetic and topological insulator materials provide powerful platforms for modern optical, electronic, and spintronic devices applications. The interaction between an antiferromagnet (AFM) and a topological insulator (TI), if sufficiently strong, could offer emergent hybrid material properties that enable new functionality exceeding what is possible in any individual material constituent. In this work, we study strong coupling between THz excitations in a three dimensional (3D) topological insulator and a quasi-two dimensional (2D) antiferromagnetic material resulting in a new hybridized mode, namely a surface Dirac plasmon-phonon-magnon polariton. We find that the interaction between a surface Dirac plasmon polariton in the 3D TI and a magnon polariton in the 2D AFM is mediated by the phonon coupling in the 3D TI material. The coupling of phonons with an electromagnetic wave propagating in the 3D TI enhances the permittivity of the TI thin film in a way that results in a strong correlation between the dispersion of Dirac plasmon polaritons on the surfaces of the TI with the thickness of the TI. As a result, the dispersion of surface Dirac plasmon polaritons in the TI can be tuned toward resonance with the magnon polariton in the AFM material by varying the TI's thickness, thereby enhancing the strength of the coupling between the excitations in the two materials. The strength of this coupling, which results in the surface Dirac plasmon-phonon-magnon polariton, can be parameterized by the amplitude of the avoided-crossing splitting between the two polariton branches at the magnon resonance frequency...
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Submitted 5 December, 2022;
originally announced December 2022.
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Surface plasmon-phonon-magnon polariton in a topological insulator-antiferromagnetic bilayer structure
Authors:
D. Quang To,
Zhengtianye Wang,
Yongchen Liu,
Weipeng Wu,
M. Benjamin Jungfleisch,
John Q. Xiao,
Joshua M. O. Zide,
Stephanie Law,
Matthew F. Doty
Abstract:
We present a robust technique for computationally studying surface polariton modes in hybrid materials. We use a semi-classical model that allows us to understand the physics behind the interactions between collective excitations of the hybrid system and develop a scattering and transfer matrix method that imposes the proper boundary conditions to solve Maxwell equations and derive a general equat…
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We present a robust technique for computationally studying surface polariton modes in hybrid materials. We use a semi-classical model that allows us to understand the physics behind the interactions between collective excitations of the hybrid system and develop a scattering and transfer matrix method that imposes the proper boundary conditions to solve Maxwell equations and derive a general equation describing the surface polariton in a heterostructure consisting of N constituent materials. We apply this method to a test structure composed of a topological insulator (TI) and an antiferromagnetic material (AFM) to study the resulting surface Dirac plasmon-phonon-magnon polariton (DPPMP). We find that interactions between the excitations of the two constituents result in the formation of hybridized modes and the emergence of avoided-crossing points in the dispersion relations for the DPPMP. For the specific case of a Bi2Se3 TI material, the polariton branch with low frequency below 2 THz redshifts upon increasing the thickness of TI thin film, which leads to an upper bound on the thickness of the TI layer that will allow an observable signature of strong coupling and the emergence of hybridized states. We also find that the strength of the coupling between the TI and the AFM, which is parameterized by the amplitude of the avoided-crossing splitting between the two polariton branches at the magnon resonance frequency, depends on the magnitude of the magnetic dipole and the line width of the magnon in the AFM material as well as on the Fermi energy of Dirac plasmon in the TI. Finally, we predict that materials with extremely high quality, i.e. low scattering loss rate, are essential to achieve an experimentally-observable strong coupling between a TI and AFM.
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Submitted 15 May, 2022;
originally announced May 2022.
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Light and microwave driven spin pum** across FeGaB-BiSb interface
Authors:
Vinay Sharma,
Weipeng Wu,
Prabesh Bajracharya,
Duy Quang To,
Anthony Johnson,
Anderson Janotti,
Garnett W. Bryant,
Lars Gundlach,
M. Benjamin Jungfleisch,
Ramesh C. Budhani
Abstract:
3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe_{78}Ga_{13}B_{9} (FeGaB) and 3-D TI Bi_{85}Sb_{15} (BiSb) activated by two complementary techniques: spin pum** and ultrafast spin-current injection. DC magnetization measurements…
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3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe_{78}Ga_{13}B_{9} (FeGaB) and 3-D TI Bi_{85}Sb_{15} (BiSb) activated by two complementary techniques: spin pum** and ultrafast spin-current injection. DC magnetization measurements establish the soft magnetic character of FeGaB films, which remains unaltered in the heterostructures of FeGaB-BiSb. Broadband ferromagnetic resonance (FMR) studies reveal enhanced dam** of precessing magnetization and large value of spin mixing conductance (5.03 x 10^{19} m^{-2}) as the spin angular momentum leaks into the TI layer. Magnetic field controlled bipolar dc voltage generated across the TI layer by inverse spin Hall effect is analyzed to extract the values of spin Hall angle and spin diffusion length of BiSb. The spin pum** parameters derived from the measurements of the femtosecond light-pulse-induced terahertz emission are consistent with the result of FMR. Kubo-Bastin formula and tight-binding model calculations shed light on the thickness-dependent spin-Hall conductivity of the TI films, with predictions that are in remarkable agreement with the experimental data. Our results suggest that room temperature deposited amorphous and polycrystalline heterostructures provide a promising platform for creating novel spin orbit torque devices.
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Submitted 12 January, 2022;
originally announced January 2022.
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Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency
Authors:
D. Quang To,
Zhengtianye Wang,
Q. Dai Ho,
Ruiqi Hu,
Wilder Acuna,
Yongchen Liu,
Garnett W. Bryant,
Anderson Janotti,
Joshua M. O. Zide,
Stephanie Law,
Matthew F. Doty
Abstract:
We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se…
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We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se$_{3}$ layer and AlGaAs/GaAs quantum wells with intersubband transitions (ISBTs) in the terahertz frequency regime creates new hybrid modes, namely Dirac plasmon-phonon-ISBT polaritons. The formation of these hybrid modes results in anti-crossings (spectral mode splitting) whose magnitude is an indication of the strength of the coupling. By varying the structural parameters of the constituent materials, our numerical calculations reveal that the magnitude of splitting depends strongly on the do** level and the scattering rate in the AlGaAs/GaAs quantum wells, as well as on the thickness of the GaAs spacer layer that separates the quantum-well structure from the TI layer. Our results reveal the material and device parameters required to obtain experimentally-observable signatures of strong coupling. Our model includes the contribution of an extra two-dimensional hole gas (2DHG) that is predicted to arise at the Bi$_{2}$Se$_{3}$/GaAs interface, based on density functional theory (DFT) calculations that explicitly account for details of the atomic terminations at the interface. The presence of this massive 2DHG at the TI/III-V interface shifts the dispersion of the Dirac plasmon-ISBT polaritons to higher frequencies. The dam** rate at this interface, in contrast, compensates the effect of the 2DHG. Finally, we observe that the phonon resonances in the TI layer are crucial to the coupling between the THz excitations in the TI and III-V materials.
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Submitted 12 January, 2022;
originally announced January 2022.
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Spin to charge conversion at Rashba-split SrTiO$_3$ interfaces from resonant tunneling
Authors:
D. Q. To,
T. H. Dang,
L. Vila,
J. P. Attané,
M. Bibes,
H. Jaffrès
Abstract:
Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba…
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Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data.
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Submitted 8 January, 2022;
originally announced January 2022.
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Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
Authors:
T. H. Dang,
J. Hawecker,
E. Rongione,
G. Baez Flores,
D. Q. To,
J. C. Rojas-Sanchez,
H. Nong,
J. Mangeney,
J. Tignon,
F. Godel,
S. Collin,
P. Seneor,
M. Bibes,
A. Fert,
M. Anane,
J. -M. George,
L. Vila,
M. Cosset-Cheneau,
D. Dolfi,
R. Lebrun,
P. Bortolotti,
K. Belashchenko,
S. Dhillon,
H. Jaffrès
Abstract:
Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inv…
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Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pum** measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pum** for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion.
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Submitted 12 December, 2020;
originally announced December 2020.
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Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions
Authors:
T. Huong Dang,
D. Quang To,
E. Erina,
T. L. Hoai Nguyen,
V. Safarov,
H. Jaffres,
H. -J. Drouhin
Abstract:
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in…
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We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.
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Submitted 25 July, 2017;
originally announced July 2017.
