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Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices
Authors:
Sampath Gamage,
Sukriti Manna,
Marc Zajac,
Steven Hancock,
Qi Wang,
Sarabpreet Singh,
Mahdi Ghafariasl,
Kun Yao,
Tom Tiwald,
Tae Joon Park,
David P. Landau,
Haidan Wen,
Subramanian Sankaranarayanan,
Pierre Darancet,
Shriram Ramanathan,
Yohannes Abate
Abstract:
Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick…
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Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.
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Submitted 29 August, 2023;
originally announced September 2023.
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Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal
Authors:
Lishai Shoham,
Maria Baskin,
Tom Tiwald,
Guy Ankonina,
Myung-Geun Han,
Anna Zakharova,
Shaked Caspi,
Shay Joseph,
Yimei Zhu,
Isao H. Inoue,
Cinthia Piamonteze,
Marcelo J. Rozenberg,
Lior Kornblum
Abstract:
In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure,…
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In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. Here, we present control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. We illustrate how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated $SrVO_3$ model system. We show how tensile and compressive biaxial strain oppositely affect the $SrVO_3$ in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. We derive and explain the spectral weight redistribution under strain and illustrate how high tensile strain drives the system towards a Mott insulating state. Implementation of such concepts will drive correlated electron phenomena closer towards new solid state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer towards practical realization.
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Submitted 21 April, 2023; v1 submitted 8 February, 2023;
originally announced February 2023.
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Probing Near-Field Thermal Emission of Localized Surface Phonons from Silicon Carbide Nanopillars
Authors:
Saman Zare,
Ramin Pouria,
Philippe K. Chow,
Tom Tiwald,
Carl P. Tripp,
Sheila Edalatpour
Abstract:
Thermal emission of localized surface phonons (LSPhs) from nanostructures of polaritonic materials is a promising mechanism for tuning the spectrum of near-field thermal radiation. Previous studies have theoretically shown that thermal emission of LSPhs results in narrow-band peaks in the near-field spectra, whose spectral locations can be modulated by changing the dimensions of the nanostructure.…
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Thermal emission of localized surface phonons (LSPhs) from nanostructures of polaritonic materials is a promising mechanism for tuning the spectrum of near-field thermal radiation. Previous studies have theoretically shown that thermal emission of LSPhs results in narrow-band peaks in the near-field spectra, whose spectral locations can be modulated by changing the dimensions of the nanostructure. However, near-field thermal emission of LSPhs has not been experimentally explored yet. In this study, we measure the spectrum of near-field thermal radiation from arrays of 6H-silicon carbide (6H-SiC) nanopillars using an internal-reflection-element based spectroscopy technique. We present an experimental demonstration of thermal emission of the transverse dipole, quadrupole, and octupole, as well as longitudinal monopole from 6H-SiC nanopillars at a near-field distance from the array. We show that the spectral location of the longitudinal monopole and transverse dipole are significantly affected by the near-field coupling between neighboring nanopillars as well as the intercoupling of the nanopillars and the substrate. We also experimentally demonstrate that the spectrum of near-field thermal radiation from 6H-SiC nanopillar arrays can be tuned by varying the dimensions of the nanopillars, providing an opportunity for designing emitters with tailored near-field thermal radiation.
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Submitted 2 February, 2023;
originally announced February 2023.
