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Multiple Neuronal Specializations Elicited By Socially Driven Recognition Of Food Odors
Authors:
Viktor Plusnin,
Nadezhda Khoroshavkina,
Ali Abonakour,
Arsenii Onuchin,
Viktoriya Manyukhina,
Nadezhda Titova,
Artem Kirsanov,
Vasiliy Solodovnikov,
Nikita Pospelov,
Vladimir Sotskov
Abstract:
This study investigates the dynamics of non-spatial specializations in hippocampal place cells during exposure to novel environments. Hippocampal place cells, known for their role in spatial map**, exhibit multi-modal responses to sensory cues. The research focuses on understanding how these cells adapt their specialization in response to novel stimuli, specifically examining non-spatial determi…
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This study investigates the dynamics of non-spatial specializations in hippocampal place cells during exposure to novel environments. Hippocampal place cells, known for their role in spatial map**, exhibit multi-modal responses to sensory cues. The research focuses on understanding how these cells adapt their specialization in response to novel stimuli, specifically examining non-spatial determinants such as odors and social interactions. Using a social-driven food odor recognition model in mice, the study records CA1 hippocampal neuron activity through miniscope imaging. The experimental design involves demonstrations of novel odors to mice, followed by observation sessions with food options. The analysis employs deep neural network tools for behavior tracking and the custom-developed INTENS software package for identifying neural specializations. Results indicate multiple specializations, particularly those related to odor, with differences observed between training and testing sessions. The findings suggest a temporal aspect to the formation of these specializations in novel conditions, necessitating further investigation for precise tracking.
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Submitted 5 February, 2024;
originally announced February 2024.
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Evidence of the disorder-independent electron-phonon scattering time in thin NbN films
Authors:
A. I. Lomakin,
E. M. Baeva,
A. D. Triznova,
N. A. Titova,
P. I. Zolotov,
A. V. Semenov,
D. E. Sunegin,
A. V. Lubenchenko,
A. I. Kolbatova,
G. N. Goltsman
Abstract:
We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5…
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We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5 K to 3.4 K. By measuring magnetoconductance in the range from $T_c$ to $\sim3T_c$, we extract the inelastic scattering rates of electrons, including electron-phonon (e-ph) scattering rates $τ_{e-ph}^{-1}$. We observe that $τ_{e-ph}^{-1}$ and their temperature dependencies are insensitive to disorder that is not described by the existing models of the e-ph scattering in disordered metals and can be due to the presence of weakly disordered metal grains. As the temperature decreases the temperature dependence $τ_{e-ph}^{-1}$ changes from $T^3$ to $T^2$, which can be result of a decrease in the dimension of the phonons involved in the e-ph scattering. The obtained values of material parameters of ultrathin NbN films can be useful for optimization of performance of NbN-based electronic devices.
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Submitted 9 December, 2022; v1 submitted 11 July, 2022;
originally announced July 2022.
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Intrinsic mechanisms of the superconducting transition broadening in epitaxial TiN films
Authors:
E. M. Baeva,
A. I. Kolbatova,
N. A. Titova,
S. Saha,
A. Boltasseva,
S. Bogdanov,
V. Shalaev,
A. V. Semenov,
G. N. Goltsman,
V. S. Khrapai
Abstract:
We investigate the impact of various fluctuation mechanisms on the dc resistance at the superconducting resistive transition (RT) in epitaxial titanium nitride (TiN) films. The studied samples demonstrate a relatively steep RT with $δT/T_\mathrm{c}$ $\sim 0.002 - 0.025$ depending on the film thickness (20, 9, and 5\, nm) and device dimensions. The transition is significantly broader than predicted…
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We investigate the impact of various fluctuation mechanisms on the dc resistance at the superconducting resistive transition (RT) in epitaxial titanium nitride (TiN) films. The studied samples demonstrate a relatively steep RT with $δT/T_\mathrm{c}$ $\sim 0.002 - 0.025$ depending on the film thickness (20, 9, and 5\, nm) and device dimensions. The transition is significantly broader than predicted by a conventional theory of superconducting fluctuations ($δT/T_\mathrm{c} \ll 10^{-3}$), which can be can be tackled by the effective medium theory of RT in an inhomogeneous superconductor. We propose that the underlying inhomogeneity has intrinsic origin and manifests via two microscopic mechanisms - static and dynamic. The dynamic inhomogeneity is associated with spontaneous fluctuations of the electronic temperature ($T$-fluctuations), whereas the static one is related to random spatial distribution of surface magnetic disorder (MD) present in TiN films. Our analysis reveals distinct dependencies of the RT width on the material parameters and device dimensions for the two mechanisms, which allows to disentangle their contributions in experiment. We find that while the $T$-fluctuations may contribute a sizeable part of the measured RT width, the main effect is related to the MD mechanism, which is quantitatively consistent with the data in a wide range of sample dimensions. Given the fact that both microscopic mechanisms are almost inevitably present in real devices, our results provide a novel perspective of microscopic origin of the RT broadening and inhomogeneity in thin superconducting films.
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Submitted 16 January, 2024; v1 submitted 13 February, 2022;
originally announced February 2022.
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Slow electron-phonon relaxation controls the dynamics of the superconducting resistive transition
Authors:
E. M. Baeva,
A. I. Kolbatova,
N. A. Titova,
S. Saha,
A. Boltasseva,
S. Bogdanov,
V. Shalaev,
A. V. Semenov,
A. Levchenko,
G. N. Goltsman,
V. S. Khrapai
Abstract:
We investigate the temporal and spatial scales of resistance fluctuations (R-fluctuations) at the superconducting resistive transition accessed through voltage fluctuations measurements in thin epitaxial TiN films. This material is characterized by a record slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. Th…
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We investigate the temporal and spatial scales of resistance fluctuations (R-fluctuations) at the superconducting resistive transition accessed through voltage fluctuations measurements in thin epitaxial TiN films. This material is characterized by a record slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. The measured Lorentzian spectrum of the R-fluctuations identifies their correlation time, which is nearly constant across the transition region and has no relation to the conventional Ginzburg-Landau time scale. Instead, the correlation time coincides with the energy relaxation time determined by a combination of the electron-phonon relaxation and the diffusion in reservoirs. Our data is quantitatively consistent with the model of spontaneous temperature fluctuations and highlight important caveats in the accepted physical picture of the resistive transition in materials with slow electron-phonon relaxation.
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Submitted 16 January, 2024; v1 submitted 13 February, 2022;
originally announced February 2022.
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Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates
Authors:
E. M. Baeva,
N. A. Titova,
L. Veyrat,
B. Sacépé,
A. V. Semenov,
G. N. Goltsman,
A. I. Kardakova,
V. S. Khrapai
Abstract:
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature $T_e$ of the films as a function of Joule power…
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Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature $T_e$ of the films as a function of Joule power per unit of area $P_{2D}$. In all samples, we observe the dependence $P_{2D}\propto T_e^n$ with the exponent $n\simeq 2$, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of $P_{2D}(T_e)$ on the length of the amorphous insulating layer is consistent with the linear $T$-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Submitted 18 May, 2021; v1 submitted 18 January, 2021;
originally announced January 2021.
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Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices
Authors:
A. O. Denisov,
A. V. Bubis,
S. U. Piatrusha,
N. A. Titova,
A. G. Nasibulin,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmueller,
E. S. Tikhonov,
V. S. Khrapai
Abstract:
Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot n…
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Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot noise measurement delivers a missing puzzle piece in NSN InAs nanowire-based devices. We demonstrate that in a trivial superconducting phase quasiparticle response is practically charge-neutral, dominated by the heat transport component with a thermal conductance being on the order of conductance quantum. This is qualitatively explained by numerous Andreev reflections of a diffusing quasiparticle, that makes its charge completely uncertain. Consistently, strong fluctuations and sign reversal are observed in the sub-gap nonlocal conductance, including occasional Andreev rectification signals. Our results prove conductance and noise as complementary measurements to characterize quasiparticle transport in superconducting proximity devices.
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Submitted 2 August, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Heat-mode excitation in a proximity superconductor
Authors:
A. O. Denisov,
A. V. Bubis,
S. U. Piatrusha,
N. A. Titova,
A. G. Nasibulin,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmueller,
E. S. Tikhonov,
V. S. Khrapai
Abstract:
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much…
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Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much harder to control. This noticeable gap in the experimental studies of mesoscopic non-equilibrium superconductivity can be filled by going beyond the conventional DC transport measurements and exploiting spontaneous current fluctuations. Here, we perform such an experiment and investigate the transport of heat in an open hybrid device based on a superconductor proximitized InAs nanowire. Using shot noise measurements, we investigate sub-gap Andreev heat guiding along the superconducting interface and fully characterize it in terms of the thermal conductance on the order of $G_\mathrm{th}\sim e^2/h$, tunable by a back gate voltage. Understanding of the heat-mode also uncovers its implicit signatures in the non-local charge transport. Our experiments open a direct pathway to probe generic charge-neutral excitations in superconducting hybrids.
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Submitted 25 April, 2022; v1 submitted 17 June, 2020;
originally announced June 2020.
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Universal bottleneck for thermal relaxation in disordered metallic films
Authors:
E. M. Baeva,
N. A. Titova,
A. I. Kardakova,
S. U. Piatrusha,
V. S. Khrapai
Abstract:
We study the heat relaxation in current biased metallic films in the regime of strong electron-phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering the heat conduction occurs predominantly via the electronic system and the profile is p…
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We study the heat relaxation in current biased metallic films in the regime of strong electron-phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of voltage bias, in spite of the fact that all the dimensions of the film are large compared to the electron-phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron-phonon scattering rate. A preliminary experimental study of a 200 nm thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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Submitted 6 December, 2019;
originally announced December 2019.
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Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder
Authors:
N. A. Saveskul,
N. A. Titova,
E. M. Baeva,
A. V. Semenov,
A. V. Lubenchenko,
S. Saha,
H. Reddy,
S. I Bogdanov,
E. E. Marinero,
V. M. Shalaev,
A. Boltasseva,
V. S. Khrapai,
A. I. Kardakova,
G. N. Goltsman
Abstract:
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for $d\leq20\,$nm. At the same time, a substantial thickness-d…
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We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for $d\leq20\,$nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of $\sim10^{12}\,\mathrm{cm}^{-2}$. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Submitted 5 November, 2019; v1 submitted 12 March, 2019;
originally announced March 2019.
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Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor
Authors:
A. Kononov,
S. V. Egorov,
N. Titova,
B. R. Semyagin,
V. V. Preobrazhenskii,
M. A. Putyato,
E. A. Emelyanov,
E. V. Deviatov
Abstract:
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves…
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We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.
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Submitted 25 October, 2016;
originally announced October 2016.
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Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection
Authors:
V. Ryzhii,
T. Otsuji,
M. Ryzhii,
V. G. Leiman,
G. Fedorov,
G. N. Goltzman,
I. A. Gayduchenko,
N. Titova,
D. Coquillat,
D. But,
W. Knap,
V. Mitin,
M. S. Shur
Abstract:
We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT netw…
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We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the two-dimensional plasmons in relatively dense networks of randomly oriented CNTs (CNT "felt") and predicts the detector responsivity spectral characteristics. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. We demonstrate that the excitation of the two-dimensional plasmons by incoming THz radiation the detector responsivity can induce sharp resonant peaks of the detector responsivity at the signal frequencies corresponding to the plasmonic resonances. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.
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Submitted 17 February, 2016;
originally announced February 2016.
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Conductance oscillations at the interface between a superconductor and the helical edge channel in a narrow HgTe quantum well
Authors:
A. Kononov,
S. V. Egorov,
N. Titova,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
E. V. Deviatov
Abstract:
We experimentally investigate electron transport through the interface between a superconductor and the edge of a two-dimensional electron system with band inversion. The interface is realized as a tunnel NbN side contact to a narrow 8~nm HgTe quantum well. It demonstrates a typical Andreev behavior with finite conductance within the superconducting gap. Surprisingly, the conductance is modulated…
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We experimentally investigate electron transport through the interface between a superconductor and the edge of a two-dimensional electron system with band inversion. The interface is realized as a tunnel NbN side contact to a narrow 8~nm HgTe quantum well. It demonstrates a typical Andreev behavior with finite conductance within the superconducting gap. Surprisingly, the conductance is modulated by a number of equally-spaced oscillations. The oscillations are present only within the superconducting gap and at lowest, below 1~K, temperatures. The oscillations disappear completely in magnetic fields, normal to the two-dimensional electron system plane. In contrast, the oscillations' period is only weakly affected by the highest, up to 14~T, in-plane oriented magnetic fields. We interpret this behavior as the interference oscillations in a helical one-dimensional edge channel due to a proximity with a superconductor.
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Submitted 17 February, 2015; v1 submitted 28 November, 2014;
originally announced November 2014.
