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Extended spin relaxation times of optically addressed telecom defects in silicon carbide
Authors:
Jonghoon Ahn,
Christina Wicker,
Nolan Bitner,
Michael T. Solomon,
Benedikt Tissot,
Guido Burkard,
Alan M. Dibos,
Jiefei Zhang,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconducto…
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Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all optical measurements of temperature-dependent spin relaxation times (T1). With this technique, we lower the temperature from about 2K to 100 mK to observe a remarkable four-orders-of-magnitude increase in spin T1 from all measured sites, with site-specific values ranging from 57 ms to above 27 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain-tuning to enable qubit operation at higher temperatures. These results position V4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.
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Submitted 25 May, 2024;
originally announced May 2024.
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Quantum communication networks with defects in silicon carbide
Authors:
Sebastian Ecker,
Matthias Fink,
Thomas Scheidl,
Philipp Sohr,
Rupert Ursin,
Muhammad Junaid Arshad,
Cristian Bonato,
Pasquale Cilibrizzi,
Adam Gali,
Péter Udvarhelyi,
Alberto Politi,
Oliver J. Trojak,
Misagh Ghezellou,
Jawad Ul Hassan,
Ivan G. Ivanov,
Nguyen Tien Son,
Guido Burkard,
Benedikt Tissot,
Joop Hendriks,
Carmem M. Gilardoni,
Caspar H. van der Wal,
Christian David,
Thomas Astner,
Philipp Koller,
Michael Trupke
Abstract:
Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity…
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Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model a memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.
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Submitted 5 March, 2024;
originally announced March 2024.
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Strain Engineering for Transition Metal Defects in SiC
Authors:
Benedikt Tissot,
Péter Udvarhelyi,
Adam Gali,
Guido Burkard
Abstract:
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effec…
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Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic level structure and optical electric-dipole transitions of the V defect in SiC. In particular we show how strain can be used to engineer the g-tensor, electronic selection rules, and the hyperfine interaction. Based on these insights we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.
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Submitted 30 October, 2023;
originally announced October 2023.
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Reservoir Engineering for Classical Nonlinear Fields
Authors:
Benedikt Tissot,
Hugo Ribeiro,
Florian Marquardt
Abstract:
Reservoir engineering has become a prominent tool to control quantum systems. Recently, there have been first experiments applying it to many-body systems, especially with a view to engineer particle-conserving dissipation for quantum simulations using bosons. In this work, we explore the dissipative dynamics of these systems in the classical limit. We derive a general equation of motion capturing…
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Reservoir engineering has become a prominent tool to control quantum systems. Recently, there have been first experiments applying it to many-body systems, especially with a view to engineer particle-conserving dissipation for quantum simulations using bosons. In this work, we explore the dissipative dynamics of these systems in the classical limit. We derive a general equation of motion capturing the effective nonlinear dissipation introduced by the bath and apply it to the special case of a Bose-Hubbard model, where it leads to an unconventional type of dissipative nonlinear Schrödinger equation. Building on that, we study the dynamics of one and two solitons in such a dissipative classical field theory.
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Submitted 23 October, 2023;
originally announced October 2023.
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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
Authors:
Pasquale Cilibrizzi,
Muhammad Junaid Arshad,
Benedikt Tissot,
Nguyen Tien Son,
Ivan G. Ivanov,
Thomas Astner,
Philipp Koller,
Misagh Ghezellou,
Jawad Ul-Hassan,
Daniel White,
Christiaan Bekker,
Guido Burkard,
Michael Trupke,
Cristian Bonato
Abstract:
Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitte…
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Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S=1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.
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Submitted 24 November, 2023; v1 submitted 2 May, 2023;
originally announced May 2023.
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Efficient High-Fidelity Flying Qubit Sha**
Authors:
Benedikt Tissot,
Guido Burkard
Abstract:
Matter qubit to traveling photonic qubit conversion is the cornerstone of numerous quantum technologies such as distributed quantum computing, as well as several quantum internet and networking protocols. We formulate a theory for stimulated Raman emission which is applicable to a wide range of physical systems including quantum dots, solid state defects, and trapped ions, as well as various param…
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Matter qubit to traveling photonic qubit conversion is the cornerstone of numerous quantum technologies such as distributed quantum computing, as well as several quantum internet and networking protocols. We formulate a theory for stimulated Raman emission which is applicable to a wide range of physical systems including quantum dots, solid state defects, and trapped ions, as well as various parameter regimes. We find the upper bound for the photonic pulse emission efficiency of arbitrary matter qubit states for imperfect emitters and show a path forward to optimizing the fidelity. Based on these results we propose a paradigm shift from optimizing the drive to directly optimizing the temporal mode of the flying qubit using a closed-form expression. Protocols for the production of time-bin encoding and spin-photon entanglement are proposed. Furthermore, the mathematical idea to use input-output theory for pulses to absorb the dominant emission process into the coherent dynamics, followed by a non-Hermitian Schrödinger equation approach has great potential for studying other physical systems.
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Submitted 2 February, 2024; v1 submitted 21 December, 2022;
originally announced December 2022.
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Nuclear Spin Quantum Memory in Silicon Carbide
Authors:
Benedikt Tissot,
Michael Trupke,
Philipp Koller,
Thomas Astner,
Guido Burkard
Abstract:
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoreti…
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Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.
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Submitted 8 August, 2022; v1 submitted 20 April, 2022;
originally announced April 2022.
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Hyperfine Structure of Transition Metal Defects in SiC
Authors:
Benedikt Tissot,
Guido Burkard
Abstract:
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the $D$-shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based…
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Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the $D$-shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nunclear-spin based quantum memories.
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Submitted 26 April, 2021;
originally announced April 2021.
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Spin Structure and Resonant Driving of Spin-1/2 Defects in SiC
Authors:
Benedikt Tissot,
Guido Burkard
Abstract:
Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have one active electron with spin 1/2 in the atomic $D$ shell. The spin structure, as well as the magnetic and optical resonance properties of the active electron…
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Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have one active electron with spin 1/2 in the atomic $D$ shell. The spin structure, as well as the magnetic and optical resonance properties of the active electron emerge from the interplay of the crystal potential and spin-orbit coupling and are described by a general model derived using group theory. We find that the spin-orbit coupling leads to additional allowed transitions and a modification of the $g$-tensor. To describe the dependence of the Rabi frequency on the magnitude and direction of the static and driving fields, we derive an effective Hamiltonian. This theoretical description can also be instrumental to perform and optimize spin control in TM defects.
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Submitted 19 November, 2020;
originally announced November 2020.
