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Rapid Exchange Cooling with Trapped Ions
Authors:
Spencer D. Fallek,
Vikram S. Sandhu,
Ryan A. McGill,
John M. Gray,
Holly N. Tinkey,
Craig R. Clark,
Kenton R. Brown
Abstract:
The trapped-ion quantum charge-coupled device (QCCD) architecture is a leading candidate for advanced quantum information processing. In current QCCD implementations, imperfect ion transport and anomalous heating can excite ion motion during a calculation. To counteract this, intermediate cooling is necessary to maintain high-fidelity gate performance. Cooling the computational ions sympatheticall…
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The trapped-ion quantum charge-coupled device (QCCD) architecture is a leading candidate for advanced quantum information processing. In current QCCD implementations, imperfect ion transport and anomalous heating can excite ion motion during a calculation. To counteract this, intermediate cooling is necessary to maintain high-fidelity gate performance. Cooling the computational ions sympathetically with ions of another species, a commonly employed strategy, creates a significant runtime bottleneck. Here, we demonstrate a different approach we call exchange cooling. Unlike sympathetic cooling, exchange cooling does not require trap** two different atomic species. The protocol introduces a bank of "coolant" ions which are repeatedly laser cooled. A computational ion can then be cooled by transporting a coolant ion into its proximity. We test this concept experimentally with two $^{40}\mathrm{Ca}^{+}$ ions, executing the necessary transport in 107 $\mathrm{μs}$, an order of magnitude faster than typical sympathetic cooling durations. We remove over 96%, and as many as 102(5) quanta, of axial motional energy from the computational ion. We verify that re-cooling the coolant ion does not decohere the computational ion. This approach validates the feasibility of a single-species QCCD processor, capable of fast quantum simulation and computation.
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Submitted 5 February, 2024; v1 submitted 5 September, 2023;
originally announced September 2023.
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Characterization of Fast Ion Transport via Position-Dependent Optical Deshelving
Authors:
Craig R. Clark,
Creston D. Herold,
J. True Merrill,
Holly N. Tinkey,
Wade Rellergert,
Robert Clark,
Roger Brown,
Wesley D. Robertson,
Curtis Volin,
Kara Maller,
Chris Shappert,
Brian J. McMahon,
Brian C. Sawyer,
Kenton R. Brown
Abstract:
Ion transport is an essential operation in some models of quantum information processing, where fast ion shuttling with minimal motional excitation is necessary for efficient, high-fidelity quantum logic. While fast and cold ion shuttling has been demonstrated, the dynamics and specific trajectory of an ion during diabatic transport have not been studied in detail. Here we describe a position-depe…
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Ion transport is an essential operation in some models of quantum information processing, where fast ion shuttling with minimal motional excitation is necessary for efficient, high-fidelity quantum logic. While fast and cold ion shuttling has been demonstrated, the dynamics and specific trajectory of an ion during diabatic transport have not been studied in detail. Here we describe a position-dependent optical deshelving technique useful for sampling an ion's position throughout its trajectory, and we demonstrate the technique on fast linear transport of a $^{40}\text{Ca}^+$ ion in a surface-electrode ion trap. At high speed, the trap's electrode filters strongly distort the transport potential waveform. With this technique, we observe deviations from the intended constant-velocity (100 m/s) transport: we measure an average speed of 83(2) m/s and a peak speed of 251(6) m/s over a distance of 120 $μ$m
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Submitted 28 April, 2023; v1 submitted 12 January, 2023;
originally announced January 2023.
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Transport-enabled entangling gate for trapped ions
Authors:
Holly N. Tinkey,
Craig R. Clark,
Brian C. Sawyer,
Kenton R. Brown
Abstract:
We implement a two-qubit entangling Mølmer-Sørensen interaction by transporting two co-trapped $^{40}\mathrm{Ca}^{+}$ ions through a stationary, bichromatic optical beam within a surface-electrode Paul trap. We describe a procedure for achieving a constant Doppler shift during the transport which uses fine temporal adjustment of the moving confinement potential. The fixed interaction duration of t…
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We implement a two-qubit entangling Mølmer-Sørensen interaction by transporting two co-trapped $^{40}\mathrm{Ca}^{+}$ ions through a stationary, bichromatic optical beam within a surface-electrode Paul trap. We describe a procedure for achieving a constant Doppler shift during the transport which uses fine temporal adjustment of the moving confinement potential. The fixed interaction duration of the ions transported through the laser beam as well as the dynamically changing ac Stark shift require alterations to the calibration procedures used for a stationary gate. We use the interaction to produce Bell states with fidelities commensurate to those of stationary gates performed in the same system. This result establishes the feasibility of actively incorporating ion transport into quantum information entangling operations.
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Submitted 1 February, 2022; v1 submitted 8 September, 2021;
originally announced September 2021.
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High-Fidelity Bell-State Preparation with $^{40}$Ca$^+$ Optical Qubits
Authors:
Craig R. Clark,
Holly N. Tinkey,
Brian C. Sawyer,
Adam M. Meier,
Karl A. Burkhardt,
Christopher M. Seck,
Christopher M. Shappert,
Nicholas D. Guise,
Curtis E. Volin,
Spencer D. Fallek,
Harley T. Hayden,
Wade G. Rellergert,
Kenton R. Brown
Abstract:
Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Molmer-Sorensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)]. Here we report an experimental demonstration of th…
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Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Molmer-Sorensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)]. Here we report an experimental demonstration of this entangling gate using a pair of $^{40}$Ca$^+$ ions in a cryogenic surface-electrode ion trap and a commercial, high-power, 532 nm Nd:YAG laser. Generating a Bell state in 35 $μ$s, we directly measure an infidelity of $6(3) \times 10^{-4}$ without subtraction of experimental errors. The 532 nm gate laser wavelength suppresses intrinsic photon scattering error to $\sim 1 \times 10^{-5}$.
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Submitted 18 October, 2021; v1 submitted 12 May, 2021;
originally announced May 2021.
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Quantum process tomography of a Mølmer-Sørensen gate via a global beam
Authors:
Holly N Tinkey,
Adam M Meier,
Craig R Clark,
Christopher M Seck,
Kenton R Brown
Abstract:
We present a framework for quantum process tomography of two-ion interactions that leverages modulations of the trap** potential and composite pulses from a global laser beam to achieve individual-ion addressing. Tomographic analysis of identity and delay processes reveals dominant error contributions from laser decoherence and slow qubit frequency drift during the tomography experiment. We use…
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We present a framework for quantum process tomography of two-ion interactions that leverages modulations of the trap** potential and composite pulses from a global laser beam to achieve individual-ion addressing. Tomographic analysis of identity and delay processes reveals dominant error contributions from laser decoherence and slow qubit frequency drift during the tomography experiment. We use this framework on two co-trapped $^{40}$Ca$^+$ ions to analyze both an optimized and an overpowered Mølmer-Sørensen gate and to compare the results of this analysis to a less informative Bell-state tomography measurement and to predictions based on a simplified noise model. These results show that the technique is effective for the characterization of two-ion quantum processes and for the extraction of meaningful information about the errors present in the system. The experimental convenience of this method will allow for more widespread use of process tomography for characterizing entangling gates in trapped-ion systems.
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Submitted 20 April, 2021; v1 submitted 12 January, 2021;
originally announced January 2021.
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Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
Authors:
Ian Appelbaum,
Holly N. Tinkey,
Pengke Li
Abstract:
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate thi…
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Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, do**, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.
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Submitted 1 October, 2014; v1 submitted 5 August, 2014;
originally announced August 2014.
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Inelastic electron tunneling spectroscopy of local "spin accumulation" devices
Authors:
Holly N. Tinkey,
Pengke Li,
Ian Appelbaum
Abstract:
We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and magnetic field dependences of the IET spectra were found to account for the dominant contribution to 3T magnetoresistance signals, thus indicating that it arise…
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We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and magnetic field dependences of the IET spectra were found to account for the dominant contribution to 3T magnetoresistance signals, thus indicating that it arises from inelastic tunneling through impurities and defects at junction interfaces and within the barrier, rather than from spin accumulation due to pure elastic tunneling into bulk Si as has been previously assumed.
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Submitted 9 May, 2014;
originally announced May 2014.