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Noise Correlations in a 1D Silicon Spin Qubit Array
Authors:
M. B. Donnelly,
J. Rowlands,
L. Kranz,
Y. L. Hsueh,
Y. Chung,
A. V. Timofeev,
H. Geng,
P. Singh-Gregory,
S. K. Gorman,
J. G. Keizer,
R. Rahman,
M. Y. Simmons
Abstract:
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poiso…
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Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poisoning within the substrate has led to intense investigations of mitigation strategies to address this. In contrast correlated noise in semiconductor spin qubits as a function of distance has not been reported to date. Here we report the magnitude, frequency and spatial dependence of noise correlations between four silicon quantum dot pairs as a function of inter-dot distance at frequencies from 0.3mHz to 1mHz. We find the magnitude of charge noise correlations, quantified by the magnitude square coherence $C_{xy}$, are significantly suppressed from $>0.5$ to $<0.1$ as the inter-dot distance increases from 75nm to 300nm. Using an analytical model we confirm that, in contrast to superconducting qubits, the dominant source of correlated noise arises from low frequency charge noise from the presence of two level fluctuators (TLFs) at the native silicon-silicon dioxide surface. Knowing this, we conclude with an important and timely discussion of charge noise mitigation strategies.
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Submitted 6 May, 2024;
originally announced May 2024.
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Self-Sustained Non-Equilibrium Co-existence of Fluid and Solid States in a Strongly Coupled Complex Plasma System
Authors:
M. G Hariprasad,
P. Bandyopadhyay,
V. S. Nikolaev,
D. A. Kolotinskii,
S. Arumugam,
G. Arora,
S. Singh,
A. Sen,
A. V. Timofeev
Abstract:
A complex (dusty) plasma system is well known as a paradigmatic model for studying the kinetics of solid-liquid phase transitions in inactive condensed matter. At the same time, under certain conditions a complex plasma system can also display characteristics of an active medium with the micron-sized particles converting energy of the ambient environment into motility and thereby becoming active.…
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A complex (dusty) plasma system is well known as a paradigmatic model for studying the kinetics of solid-liquid phase transitions in inactive condensed matter. At the same time, under certain conditions a complex plasma system can also display characteristics of an active medium with the micron-sized particles converting energy of the ambient environment into motility and thereby becoming active. We present a detailed analysis of the experimental complex plasmas system that shows evidence of a non-equilibrium stationary coexistence between a cold crystalline and a hot fluid state in the structure due to the conversion of plasma energy into the motion energy of microparticles in the central region of the system. The plasma mediated non-reciprocal interaction between the dust particles is the underlying mechanism for the enormous heating of the central subsystem, and it acts as a micro-scale energy source that keeps the central subsystem in the molten state. Accurate multiscale simulations of the system based on combined molecular dynamics and particle-in-cell approaches show that strong structural nonuniformity of the system under the action of electostatic trap makes development of instabilities a local process. We present both experimental tests conducted with a complex plasmas system in a DC glow discharge plasma and a detailed theoretical analysis.
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Submitted 13 August, 2022;
originally announced August 2022.
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Single-shot readout of multiple donor electron spins with a gate-based sensor
Authors:
Mark R. Hogg,
Prasanna Pakkiam,
Samuel K. Gorman,
Andrey V. Timofeev,
Yousun Chung,
Gurpreet K. Gulati,
Matthew G. House,
Michelle Y. Simmons
Abstract:
Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the s…
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Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the sensors, and extending the range of each sensor to read more qubits. Here we show high-fidelity single-shot electron spin readout using a nanoscale single-lead quantum dot (SLQD) sensor that is both compact and capable of reading multiple qubits. Our gate-based SLQD sensor is deployed in an all-epitaxial silicon donor spin qubit device, and we demonstrate single-shot readout of three $^{31}$P donor quantum dot electron spins with a maximum fidelity of 95%. Importantly in our device the quantum dot confinement potentials are provided inherently by the donors, removing the need for additional metallic confinement gates and resulting in strong capacitive interactions between sensor and donor quantum dots. We observe a $1/d^{1.4}$ scaling of the capacitive coupling between sensor and $^{31}$P dots (where $d$ is the sensor-dot distance), compared to $1/d^{2.5-3.0}$ in gate-defined quantum dot devices. Due to the small qubit size and strong capacitive interactions in all-epitaxial donor devices, we estimate a single sensor can achieve single-shot readout of approximately 15 qubits in a linear array, compared to 3-4 qubits for a similar sensor in a gate-defined quantum dot device. Our results highlight the potential for spin qubit devices with significantly reduced sensor densities.
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Submitted 17 March, 2022;
originally announced March 2022.
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Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction
Authors:
Emma Mykkänen,
Janne S. Lehtinen,
Leif Grönberg,
Andrey Shchepetov,
Andrey V. Timofeev,
David Gunnarsson,
Antti Kemppinen,
Antti J. Manninen,
Mika Prunnila
Abstract:
Control of heat flux at small length scales is crucial for numerous solid-state devices and systems. In addition to the thermal management of information and communication devices the mastering of heat transfer channels down to the nanoscale also enable, e.g., new memory concepts, high sensitivity detectors and sensors, energy harvesters and compact solid-state refrigerators. Electronic coolers an…
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Control of heat flux at small length scales is crucial for numerous solid-state devices and systems. In addition to the thermal management of information and communication devices the mastering of heat transfer channels down to the nanoscale also enable, e.g., new memory concepts, high sensitivity detectors and sensors, energy harvesters and compact solid-state refrigerators. Electronic coolers and thermal detectors for electromagnetic radiation, especially, rely on the maximization of electro-thermal response and blockade of phonon transport. In this work, we propose and demonstrate that efficient electro-thermal operation and phonon transfer blocking can be achieved in a single solid-state thermionic junction. Our experimental demonstration relies on suspended semiconductor-superconductor junctions where the electro-thermal response arises from the superconducting energy gap, and the phonon blocking naturally results from the transmission bottleneck at the junction. We suspend different size degenerately doped silicon chips (up to macroscopic scale) directly from the junctions and cool these by biasing the junctions. The electronic cooling operation characteristics are accompanied by measurement and analysis of the thermal resistance components in the structures indicating the operation principle of phonon blocking in the junctions.
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Submitted 9 September, 2018;
originally announced September 2018.
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Single-shot single-gate RF spin readout in silicon
Authors:
P. Pakkiam,
A. V. Timofeev,
M. G. House,
M. R. Hogg,
T. Kobayashi,
M. Koch,
S. Rogge,
M. Y. Simmons
Abstract:
For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is,…
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For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is, a single measurement (DiVincenzo 2000). Here we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of $82.9\%$ at a $3.3~\text{kHz}$ measurement bandwidth. We use this technique to measure a triplet $T_-$ to singlet $S_0$ relaxation time of $0.62~\text{ms}$ in precision donor quantum dots in silicon. We also show that the use of RF readout does not impact the maximum readout time at zero detuning limited by the $S_0$ to $T_-$ decay, which remained at approximately $2~\text{ms}$. This establishes single-gate sensing as a viable readout method for spin qubits.
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Submitted 5 September, 2018;
originally announced September 2018.
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Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes
Authors:
Andrey V. Timofeev,
Aapo Varpula,
Andrey Shchepetov,
Kestutis Grigoras,
Juha Hassel,
Jouni Ahopelto,
Markku Ylilammi,
Mika Prunnila
Abstract:
We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into heater/absorber area and narrow n- and p-doped beams, which operate as the thermocouple. The electro-thermal characteriza…
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We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into heater/absorber area and narrow n- and p-doped beams, which operate as the thermocouple. The electro-thermal characterization of the devices reveal noise equivalent power of 13 pW/rtHz and thermal time constant of 2.5 ms. The high sensitivity of the devices is due to the high Seebeck coefficient of 0.39 mV/K and reduction of thermal conductivity of the Si beams from the bulk value. The bolometers operate in the Johnson-Nyquist noise limit of the thermocouple, and the performance improvement towards the operation close to the temperature fluctuation limit is discussed.
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Submitted 8 April, 2017;
originally announced April 2017.
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Brownian refrigeration by hybrid tunnel junctions
Authors:
J. T. Peltonen,
M. Helle,
A. V. Timofeev,
P. Solinas,
F. W. J. Hekking,
J. P. Pekola
Abstract:
Voltage fluctuations generated in a hot resistor can cause extraction of heat from a colder normal metal electrode of a hybrid tunnel junction between a normal metal and a superconductor. We extend the analysis presented in [Phys. Rev. Lett. 98, 210604 (2007)] of this heat rectifying system, bearing resemblance to a Maxwell's demon. Explicit analytic calculations show that the entropy of the total…
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Voltage fluctuations generated in a hot resistor can cause extraction of heat from a colder normal metal electrode of a hybrid tunnel junction between a normal metal and a superconductor. We extend the analysis presented in [Phys. Rev. Lett. 98, 210604 (2007)] of this heat rectifying system, bearing resemblance to a Maxwell's demon. Explicit analytic calculations show that the entropy of the total system is always increasing. We then consider a single electron transistor configuration with two hybrid junctions in series, and show how the cooling is influenced by charging effects. We analyze also the cooling effect from nonequilibrium fluctuations instead of thermal noise, focusing on the shot noise generated in another tunnel junction. We conclude by discussing limitations for an experimental observation of the effect.
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Submitted 29 April, 2011;
originally announced April 2011.
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Electronic Refrigeration at the Quantum Limit
Authors:
Andrey V. Timofeev,
Meri Helle,
Matthias Meschke,
Mikko Möttönen,
Jukka P. Pekola
Abstract:
We demonstrate quantum limited electronic refrigeration of a metallic island in a low temperature micro-circuit. We show that matching the impedance of the circuit enables refrigeration at a distance, of about 50 um in our case, through superconducting leads with a cooling power determined by the quantum of thermal conductance. In a reference sample with a mismatched circuit this effect is absen…
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We demonstrate quantum limited electronic refrigeration of a metallic island in a low temperature micro-circuit. We show that matching the impedance of the circuit enables refrigeration at a distance, of about 50 um in our case, through superconducting leads with a cooling power determined by the quantum of thermal conductance. In a reference sample with a mismatched circuit this effect is absent. Our results are consistent with the concept of electromagnetic heat transport. We observe and analyze the crossover between electromagnetic and quasiparticle heat flux in a superconductor.
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Submitted 17 February, 2009; v1 submitted 16 February, 2009;
originally announced February 2009.
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Recombination limited energy relaxation in a BCS superconductor
Authors:
A. V. Timofeev,
C. Pascual Garcia,
N. B. Kopnin,
A. M. Savin,
M. Meschke,
F. Giazotto,
J. P. Pekola
Abstract:
We study quasiparticle energy relaxation at sub-kelvin temperatures by injecting hot electrons into an aluminium island and measuring the energy flux from electrons into phonons both in the superconducting and in the normal state. The data show strong reduction of the flux at low temperatures in the superconducting state, in qualitative agreement with the presented quasiclassical theory for clea…
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We study quasiparticle energy relaxation at sub-kelvin temperatures by injecting hot electrons into an aluminium island and measuring the energy flux from electrons into phonons both in the superconducting and in the normal state. The data show strong reduction of the flux at low temperatures in the superconducting state, in qualitative agreement with the presented quasiclassical theory for clean superconductors. Quantitatively, the energy flux exceeds that from the theory both in the superconducting and in the normal state, possibly suggesting an enhanced or additional relaxation process.
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Submitted 28 April, 2008;
originally announced April 2008.
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Wide-band detection of the third moment of shot noise by a hysteretic Josephson junction
Authors:
A. V. Timofeev,
M. Meschke,
J. T. Peltonen,
T. T. Heikkila,
J. P. Pekola
Abstract:
We use a hysteretic Josephson junction as an on-chip detector of the third moment of shot noise of a tunnel junction. The detectable bandwidth is determined by the plasma frequency of the detector, which is about 50 GHz in the present experiment. The third moment of shot noise results in a measurable change of the switching rate when reversing polarity of the current through the noise source. We…
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We use a hysteretic Josephson junction as an on-chip detector of the third moment of shot noise of a tunnel junction. The detectable bandwidth is determined by the plasma frequency of the detector, which is about 50 GHz in the present experiment. The third moment of shot noise results in a measurable change of the switching rate when reversing polarity of the current through the noise source. We analyze the observed asymmetry assuming adiabatic response of the detector.
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Submitted 4 December, 2006;
originally announced December 2006.
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Detecting Current Noise with a Josephson Junction in the Macroscopic Quantum Tunneling Regime
Authors:
J. T. Peltonen,
A. V. Timofeev,
M. Meschke,
J. P. Pekola
Abstract:
We discuss the use of a hysteretic Josephson junction to detect current fluctuations with frequencies below the plasma frequency of the junction. These adiabatic fluctuations are probed by switching measurements observing the noise-affected average rate of macroscopic quantum tunneling of the detector junction out of its zero-voltage state. In a proposed experimental scheme, frequencies of the n…
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We discuss the use of a hysteretic Josephson junction to detect current fluctuations with frequencies below the plasma frequency of the junction. These adiabatic fluctuations are probed by switching measurements observing the noise-affected average rate of macroscopic quantum tunneling of the detector junction out of its zero-voltage state. In a proposed experimental scheme, frequencies of the noise are limited by an on-chip filtering circuit. The third cumulant of current fluctuations at the detector is related to an asymmetry of the switching rates.
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Submitted 22 November, 2006;
originally announced November 2006.
