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Ultrafast Umklapp-assisted electron-phonon cooling in magic-angle twisted bilayer graphene
Authors:
Jake Dudley Mehew,
Rafael Luque Merino,
Hiroaki Ishizuka,
Alexander Block,
Jaime Díez Mérida,
Andrés Díez Carlón,
Kenji Watanabe,
Takashi Taniguchi,
Leonid S. Levitov,
Dmitri K. Efetov,
Klaas-Jan Tielrooij
Abstract:
Carrier relaxation measurements in moiré materials offer a unique probe of the microscopic interactions, in particular the ones that are not easily measured by transport. Umklapp scattering between phonons is a ubiquitous momentum-nonconserving process that governs the thermal conductivity of semiconductors and insulators. In contrast, Umklapp scattering between electrons and phonons has not been…
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Carrier relaxation measurements in moiré materials offer a unique probe of the microscopic interactions, in particular the ones that are not easily measured by transport. Umklapp scattering between phonons is a ubiquitous momentum-nonconserving process that governs the thermal conductivity of semiconductors and insulators. In contrast, Umklapp scattering between electrons and phonons has not been demonstrated experimentally. Here, we study the cooling of hot electrons in moiré graphene using time- and frequency-resolved photovoltage measurements as a direct probe of its complex energy pathways including electron-phonon coupling. We report on a dramatic speedup in hot carrier cooling of twisted bilayer graphene near the magic angle: the cooling time is a few picoseconds from room temperature down to 5 K, whereas in pristine graphene coupling to acoustic phonons takes nanoseconds. Our analysis indicates that this ultrafast cooling is a combined effect of the formation of a superlattice with low-energy moiré phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone, enabling Umklapp scattering that overcomes electron-phonon momentum mismatch. These results demonstrate a way to engineer electron-phonon coupling in twistronic systems, an approach that could contribute to the fundamental understanding of their transport properties and enable applications in thermal management and ultrafast photodetection.
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Submitted 31 January, 2023;
originally announced January 2023.
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Electron cooling in graphene enhanced by plasmon-hydron resonance
Authors:
Xiaoqing Yu,
Alessandro Principi,
Klaas-Jan Tielrooij,
Mischa Bonn,
Nikita Kavokine
Abstract:
Evidence is accumulating for the crucial role of a solid's free electrons in the dynamics of solid-liquid interfaces. Liquids induce electronic polarization and drive electric currents as they flow; electronic excitations, in turn, participate in hydrodynamic friction. Yet, the underlying solid-liquid interactions have been lacking a direct experimental probe. Here, we study the energy transfer ac…
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Evidence is accumulating for the crucial role of a solid's free electrons in the dynamics of solid-liquid interfaces. Liquids induce electronic polarization and drive electric currents as they flow; electronic excitations, in turn, participate in hydrodynamic friction. Yet, the underlying solid-liquid interactions have been lacking a direct experimental probe. Here, we study the energy transfer across liquid-graphene interfaces using ultrafast spectroscopy. The graphene electrons are heated up quasi-instantaneously by a visible excitation pulse, and the time evolution of the electronic temperature is then monitored with a terahertz pulse. We observe that water accelerates the cooling of the graphene electrons, whereas other polar liquids leave the cooling dynamics largely unaffected. A quantum theory of solid-liquid heat transfer accounts for the water-specific cooling enhancement through a resonance between the graphene surface plasmon mode and the so-called hydrons -- water charge fluctuations --, particularly the water libration modes, that allows for efficient energy transfer. Our results provide direct experimental evidence of a solid-liquid interaction mediated by collective modes and support the theoretically proposed mechanism for quantum friction. They further reveal a particularly large thermal boundary conductance for the water-graphene interface and suggest strategies for enhancing the thermal conductivity in graphene-based nanostructures.
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Submitted 7 May, 2023; v1 submitted 12 January, 2023;
originally announced January 2023.
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A pre-time-zero spatiotemporal microscopy technique for the ultrasensitive determination of the thermal diffusivity of thin films
Authors:
Sebin Varghese,
Jake Dudley Mehew,
Alexander Block,
David Saleta Reig,
Paweł Woźniak,
Roberta Farris,
Zeila Zanolli,
Pablo Ordejón,
Matthieu J. Verstraete,
Niek F. van Hulst,
Klaas-Jan Tielrooij
Abstract:
Diffusion is one of the most ubiquitous transport phenomena in nature. Experimentally, it can be tracked by following point spreading in space and time. Here, we introduce a spatiotemporal pump-probe microscopy technique that exploits the residual spatial temperature profile obtained through the transient reflectivity when probe pulses arrive before pump pulses. This corresponds to an effective pu…
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Diffusion is one of the most ubiquitous transport phenomena in nature. Experimentally, it can be tracked by following point spreading in space and time. Here, we introduce a spatiotemporal pump-probe microscopy technique that exploits the residual spatial temperature profile obtained through the transient reflectivity when probe pulses arrive before pump pulses. This corresponds to an effective pump-probe time delay of 13 ns, determined by the repetition rate of our laser system (76 MHz). This pre-time-zero technique enables probing the diffusion of long-lived excitations created by previous pump pulses with nanometer accuracy, and is particularly powerful for following in-plane heat diffusion in thin films. In contrast to existing techniques for quantifying thermal transport it does not require any material input parameters or strong heating. We demonstrate the direct determination of the thermal diffusivities of the layered materials MoSe$_2$ (0.18 cm$^2$/s), WSe$_2$ (0.20 cm$^2$/s), MoS$_2$ (0.35 cm$^2$/s), and WS$_2$ (0.59 cm$^2$/s). This technique paves the way for observing novel nanoscale thermal transport phenomena and tracking diffusion of a broad range of species.
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Submitted 10 November, 2022; v1 submitted 9 November, 2022;
originally announced November 2022.
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Milliwatt terahertz harmonic generation from topological insulator metamaterials
Authors:
Klaas-Jan Tielrooij,
Alessandro Principi,
David Saleta Reig,
Alexander Block,
Sebin Varghese,
Steffen Schreyeck,
Karl Brunner,
Grzegorz Karczewski,
Igor Ilyakov,
Oleksiy Ponomaryov,
Thales V. A. G. de Oliveira,
Min Chen,
Jan-Christoph Deinert,
Carmen Gomez Carbonell,
Sergio O. Valenzuela,
Laurens W. Molenkamp,
Tobias Kiessling,
Georgy V. Astakhov,
Sergey Kovalev
Abstract:
Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at…
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Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications.
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Submitted 1 November, 2022;
originally announced November 2022.
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Ultrafast electronic heat dissipation through surface-to-bulk Coulomb coupling in quantum materials
Authors:
Alessandro Principi,
Klaas-Jan Tielrooij
Abstract:
The timescale of electronic cooling is an important parameter controlling the performance of devices based on quantum materials for optoelectronic, thermoelectric and thermal management applications. In most conventional materials, cooling proceeds via the emission of phonons, a relatively slow process that can bottleneck the carrier relaxation dynamics, thus degrading the device performance. Here…
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The timescale of electronic cooling is an important parameter controlling the performance of devices based on quantum materials for optoelectronic, thermoelectric and thermal management applications. In most conventional materials, cooling proceeds via the emission of phonons, a relatively slow process that can bottleneck the carrier relaxation dynamics, thus degrading the device performance. Here we present the theory of near-field radiative heat transfer, that occurs when a two-dimensional electron system is coupled via the non-retarded Coulomb interaction to a three-dimensional bulk that can behave as a very efficient electronic heat sink. We apply our theory to study the cooling dynamics of surface states of three dimensional topological insulators, and of graphene in proximity to small-gap bulk materials. The ``Coulomb cooling'' we introduce is alternative to the conventional phonon-mediated cooling, can be very efficient and dominate the cooling dynamics under certain circumstances. We show that this cooling mechanism can lead to a sub-picosecond time scale, significantly faster than the cooling dynamics normally observed in Dirac materials.
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Submitted 18 June, 2022;
originally announced June 2022.
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Unraveling heat transport and dissipation in suspended MoSe$_2$ crystals from bulk to monolayer
Authors:
D. Saleta Reig,
S. Varghese,
R. Farris,
A. Block,
J. D. Mehew,
O. Hellman,
P. Woźniak,
M. Sledzinska,
A. El Sachat,
E. Chávez-Ángel,
S. O. Valenzuela,
N. F. Van Hulst,
P. Ordejón,
Z. Zanolli,
C. M. Sotomayor Torres,
M. J. Verstraete,
K. J. Tielrooij
Abstract:
Understanding thermal transport in layered transition metal dichalcogenide (TMD) crystals is crucial for a myriad of applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood. Here, we present a combined experimental-theoretical study of the intrinsic lattice thermal conductivity of the representative…
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Understanding thermal transport in layered transition metal dichalcogenide (TMD) crystals is crucial for a myriad of applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood. Here, we present a combined experimental-theoretical study of the intrinsic lattice thermal conductivity of the representative TMD MoSe$_2$, focusing on the effect of material thickness and the material's environment. We use Raman thermometry measurements on suspended crystals, where we identify and eliminate crucial artefacts, and perform $ab$ $initio$ simulations with phonons at finite, rather than zero, temperature. We find that phonon dispersions and lifetimes change strongly with thickness, yet (sub)nanometer thin TMD films exhibit a similar in-plane thermal conductivity ($\sim$20~Wm$^{-1}$K$^{-1}$) as bulk crystals ($\sim$40~Wm$^{-1}$K$^{-1}$). This is the result of compensating phonon contributions, in particular low-frequency modes with a surprisingly long mean free path of several micrometers that contribute significantly to thermal transport for monolayers. We furthermore demonstrate that out-of-plane heat dissipation to air is remarkably efficient, in particular for the thinnest crystals. These results are crucial for the design of TMD-based applications in thermal management, thermoelectrics and (opto)electronics.
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Submitted 19 September, 2021;
originally announced September 2021.
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Electrically tuneable nonequilibrium optical response of graphene
Authors:
Eva A. A. Pogna,
Andrea Tomadin,
Osman Balci,
Giancarlo Soavi,
Ioannis Paradisanos,
Michele Guizzardi,
Paolo Pedrinazzi,
Sandro Mignuzzi,
Klaas-Jan Tielrooij,
Marco Polini,
Andrea C. Ferrari,
Giulio Cerullo
Abstract:
The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy…
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The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy E$_F$ and of the threshold for interband optical absorption. Here, we report the tunability of the SLG non-equilibrium optical response in the near-infrared (1000-1700nm/0.729-1.240eV), exploring a range of E$_F$ from -650 to 250 meV by ionic liquid gating. As E$_F$ increases from the Dirac point to the threshold for Pauli blocking of interband absorption, we observe a slow-down of the photobleaching relaxation dynamics, which we attribute to the quenching of optical phonon emission from photoexcited charge carriers. For E$_F$ exceeding the Pauli blocking threshold, photobleaching eventually turns into photoinduced absorption, due to hot electrons' excitation increasing SLG absorption. The ability to control both recovery time and sign of nonequilibrium optical response by electrostatic gating makes SLG ideal for tunable saturable absorbers with controlled dynamics.
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Submitted 22 February, 2022; v1 submitted 15 June, 2021;
originally announced June 2021.
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Hot carriers in graphene -- fundamentals and applications
Authors:
Mathieu Massicotte,
Giancarlo Soavi,
Alessandro Principi,
Klaas-Jan Tielrooij
Abstract:
Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunabilit…
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Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-do**. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.
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Submitted 18 May, 2021;
originally announced May 2021.
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Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons
Authors:
Eva A. A. Pogna,
Xiaoyu Jia,
Alessandro Principi,
Alexander Block,
Luca Banszerus,
**can Zhang,
Xiaoting Liu,
Thibault Sohier,
Stiven Forti,
Karuppasamy Soundarapandian,
Bernat Terrés,
Jake D. Mehew,
Chiara Trovatello,
Camilla Coletti,
Frank H. L. Koppens,
Mischa Bonn,
Niek van Hulst,
Matthieu J. Verstraete,
Hailin Peng,
Zhongfan Liu,
Christoph Stampfer,
Giulio Cerullo,
Klaas-Jan Tielrooij
Abstract:
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif…
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Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.
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Submitted 5 March, 2021;
originally announced March 2021.
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Grating-graphene metamaterial as a platform for terahertz nonlinear photonics
Authors:
Jan-Christoph Deinert,
David Alcaraz Iranzo,
Raul Perez,
Xiaoyu Jia,
Hassan A. Hafez,
Igor Ilyakov,
Nilesh Awari,
Min Chen,
Mohammed Bawatna,
Alexey N. Ponomaryov,
Semyon Germanskiy,
Mischa Bonn,
Frank H. L. Koppens,
Dmitry Turchinovich,
Michael Gensch,
Sergey Kovalev,
Klaas-Jan Tielrooij
Abstract:
Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear material systems with efficient conversion and small material footprint. Ideally, the material system should allow for chip-integration and room-temperature op…
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Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear material systems with efficient conversion and small material footprint. Ideally, the material system should allow for chip-integration and room-temperature operation. Two-dimensional materials are highly interesting in this regard. Particularly promising is graphene, which has demonstrated an exceptionally large nonlinearity in the terahertz regime. Yet, the light-matter interaction length in two-dimensional materials is inherently minimal, thus limiting the overall nonlinear-optical conversion efficiency. Here we overcome this challenge using a metamaterial platform that combines graphene with a photonic grating structure providing field enhancement. We measure terahertz third-harmonic generation in this metamaterial and obtain an effective third-order nonlinear susceptibility with a magnitude as large as 3$\cdot$10$^{-8}$m$^2$/V$^2$, or 21 esu, for a fundamental frequency of 0.7 THz. This nonlinearity is 50 times larger than what we obtain for graphene without grating. Such an enhancement corresponds to third-harmonic signal with an intensity that is three orders of magnitude larger due to the grating. Moreover, we demonstrate a field conversion efficiency for the third harmonic of up to $\sim$1% using a moderate field strength of $\sim$30 kV/cm. Finally we show that harmonics beyond the third are enhanced even more strongly, allowing us to observe signatures of up to the 9$^{\rm th}$ harmonic. Grating-graphene metamaterials thus constitute an outstanding platform for commercially viable, CMOS compatible, room temperature, chip-integrated, THz nonlinear conversion applications.
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Submitted 24 September, 2020;
originally announced September 2020.
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Observation of giant and tuneable thermal diffusivity of Dirac fluid at room temperature
Authors:
Alexander Block,
Alessandro Principi,
Niels C. H. Hesp,
Aron W. Cummings,
Matz Liebel,
Kenji Watanabe,
Takashi Taniguchi,
Stephan Roche,
Frank H. L. Koppens,
Niek F. van Hulst,
Klaas-Jan Tielrooij
Abstract:
Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge (14-22). Here we observe heat transport in graphene i…
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Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge (14-22). Here we observe heat transport in graphene in the diffusive and hydrodynamic regimes, and report a controllable transition to the Dirac-fluid regime at room temperature, using carrier temperature and carrier density as control knobs. We introduce the technique of spatiotemporal thermoelectric microscopy with femtosecond temporal and nanometre spatial resolution, which allows for tracking electronic heat spreading. In the diffusive regime, we find a thermal diffusivity of $\sim$2,000 cm$^2$/s, consistent with charge transport. Remarkably, during the hydrodynamic time window before momentum relaxation, we observe heat spreading corresponding to a giant diffusivity up to 70,000 cm$^2$/Vs, indicative of a Dirac fluid. These results are promising for applications such as nanoscale thermal management.
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Submitted 28 December, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.
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Fast electrical modulation of strong near-field interactions between erbium emitters and graphene
Authors:
Daniel Cano,
Alban Ferrier,
Karuppasamy Soundarapandian,
Antoine Reserbat-Plantey,
Marion Scarafagio,
Alexandre Tallaire,
Antoine Seyeux,
Philippe Marcus,
Hugues de Riedmatten,
Philippe Goldner,
Frank H. L. Koppens,
Klaas-Jan Tielrooij
Abstract:
Combining the quantum optical properties of single-photon emitters with the strong near-field interactions available in nanophotonic and plasmonic systems is a powerful way of creating quantum manipulation and metrological functionalities. The ability to actively and dynamically modulate emitter-environment interactions is of particular interest in this regard. While thermal, mechanical and optica…
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Combining the quantum optical properties of single-photon emitters with the strong near-field interactions available in nanophotonic and plasmonic systems is a powerful way of creating quantum manipulation and metrological functionalities. The ability to actively and dynamically modulate emitter-environment interactions is of particular interest in this regard. While thermal, mechanical and optical modulation have been demonstrated, electrical modulation has remained an outstanding challenge. Here we realize fast, all-electrical modulation of the near-field interactions between a nanolayer of erbium emitters and graphene, by in-situ tuning the Fermi energy of graphene. We demonstrate strong interactions with a >1,000-fold increased decay rate for 25% of the emitters, and electrically modulate these interactions with frequencies up to 300 kHz - orders of magnitude faster than the emitters radiative decay (100 Hz). This constitutes an enabling platform for integrated quantum technologies, opening routes to quantum entanglement generation by collective plasmon emission or photon emission with controlled waveform.
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Submitted 23 July, 2020; v1 submitted 22 July, 2020;
originally announced July 2020.
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Long-Lived Charge Separation Following Pump-Energy Dependent Ultrafast Charge Transfer in Graphene/WS$_2$ Heterostructures
Authors:
Shuai Fu,
Indy du Fossé,
Xiaoyu Jia,
**gyin Xu,
Xiaoqing Yu,
Heng Zhang,
Wenhao Zheng,
Sven Krasel,
Zong** Chen,
Zhiming M. Wang,
Klaas-Jan Tielrooij,
Mischa Bonn,
Arjan J. Houtepen,
Hai I. Wang
Abstract:
Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides (TMDCs) have recently shown great promise for high-performance optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphe…
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Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides (TMDCs) have recently shown great promise for high-performance optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS$_2$ heterostructures, by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS$_2$ following photoexcitation. We find that CT across graphene-WS$_2$ interfaces occurs via photo-thermionic emission for sub-A-exciton excitation, and direct hole transfer from WS$_2$ to the valence band of graphene for above-A-exciton excitation. Remarkably, we observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. These findings provide relevant insights to optimize further the performance of optoelectronic devices, in particular photodetection.
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Submitted 6 August, 2020; v1 submitted 17 July, 2020;
originally announced July 2020.
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Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators at room temperature
Authors:
S. Kovalev,
K. -J. Tielrooij,
J. -C. Deinert,
I. Ilyakov,
N. Awari,
M. Chen,
A. Ponomaryov,
M. Bawatna,
T. V. A. G. de Oliveira,
L. M. Eng,
K. A. Kuznetsov,
G. Kh. Kitaeva,
P. I. Kuznetsov,
H. A. Hafez,
D. Turchinovich,
M. Gensch
Abstract:
Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of…
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Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons with TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically-protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.
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Submitted 1 March, 2021; v1 submitted 6 June, 2020;
originally announced June 2020.
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Plasmonic antenna coupling to hyperbolic phonon-polaritons for sensitive and fast mid-infrared photodetection with graphene
Authors:
Sebastián Castilla,
Ioannis Vangelidis,
Varun-Varma Pusapati,
Jordan Goldstein,
Marta Autore,
Tetiana Slipchenko,
Khannan Rajendran,
Seyoon Kim,
Kenji Watanabe,
Takashi Taniguchi,
Luis Martín-Moreno,
Dirk Englund,
Klaas-Jan Tielrooij,
Rainer Hillenbrand,
Elefterios Lidorikis,
Frank H. L. Koppens
Abstract:
Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient couplin…
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Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient coupling of a plasmonic antenna to hyperbolic phonon-polaritons in hexagonal-BN to highly concentrate mid-infrared light into a graphene pn-junction. We balance the interplay of the absorption, electrical and thermal conductivity of graphene via the device geometry. This novel approach yields remarkable device performance featuring room temperature high sensitivity (NEP of 82 pW-per-square-root-Hz) and fast rise time of 17 nanoseconds (setup-limited), among others, hence achieving a combination currently not present in the state-of-the-art graphene and commercial mid-infrared detectors. We also develop a multiphysics model that shows excellent quantitative agreement with our experimental results and reveals the different contributions to our photoresponse, thus paving the way for further improvement of these types of photodetectors even beyond mid-infrared range.
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Submitted 30 May, 2020;
originally announced June 2020.
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Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
Authors:
Sebastián Castilla,
Bernat Terrés,
Marta Autore,
Leonardo Viti,
Jian Li,
Alexey Y. Nikitin,
Ioannis Vangelidis,
Kenji Watanabe,
Takashi Taniguchi,
Elefterios Lidorikis,
Miriam S. Vitiello,
Rainer Hillenbrand,
Klaas-Jan Tielrooij,
Frank H. L. Koppens
Abstract:
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that…
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Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that exploits the photothermoelectric (PTE) effect, based on a design that employs a dual-gated, dipolar antenna with a gap of 100 nm. This narrow-gap antenna simultaneously creates a pn junction in a graphene channel located above the antenna and strongly concentrates the incoming radiation at this pn junction, where the photoresponse is created. We demonstrate that this novel detector has an excellent sensitivity, with a noise-equivalent power of 80 pW-per-square-root-Hz at room temperature, a response time below 30 ns (setup-limited), a high dynamic range (linear power dependence over more than 3 orders of magnitude) and broadband operation (measured range 1.8-4.2 THz, antenna-limited), which fulfills a combination that is currently missing in the state-of-the-art detectors. Importantly, on the basis of the agreement we obtained between experiment, analytical model, and numerical simulations, we have reached a solid understanding of how the PTE effect gives rise to a THz-induced photoresponse, which is very valuable for further detector optimization.
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Submitted 6 May, 2019;
originally announced May 2019.
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Nano-imaging of intersubband transitions in van der Waals quantum wells
Authors:
Peter Schmidt,
Fabien Vialla,
Simone Latini,
Mathieu Massicotte,
Klaas-Jan Tielrooij,
Stefan Mastel,
Gabriele Navickaite,
Mark Danovich,
David A. Ruiz-Tijerina,
Celal Yelgel,
Vladimir Falko,
Kristian Thygesen,
Rainer Hillenbrand,
Frank H. L. Koppens
Abstract:
The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatilit…
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The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions. Here, we introduce the concept of intersubband transitions in van der Waals quantum wells and report their first experimental observation. Van der Waals quantum wells are naturally formed by two-dimensional (2D) materials and hold unexplored potential to overcome the aforementioned limitations: They form atomically sharp interfaces and can easily be combined into heterostructures without lattice-matching restrictions. We employ near-field local probing to spectrally resolve and electrostatically control the intersubband absorption with unprecedented nanometer-scale spatial resolution. This work enables exploiting intersubband transitions with unmatched design freedom and individual electronic and optical control suitable for photodetectors, LEDs and lasers.
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Submitted 25 June, 2018;
originally announced June 2018.
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The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies
Authors:
A. Tomadin,
S. M. Hornett,
H. I. Wang,
E. M. Alexeev,
A. Candini,
C. Coletti,
D. Turchinovich,
M. Klaeui,
M. Bonn,
F. H. L. Koppens,
E. Hendry,
M. Polini,
K. J. Tielrooij
Abstract:
For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have be…
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For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have been put forward concerning the sign of the photoconductivity, the occurrence and significance of the creation of additional electron-hole pairs, and, in particular, how the relevant processes depend on Fermi energy. Here, we present a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity, combining optical pump - terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation. We distinguish two types of ultrafast photo-induced carrier heating processes: At low (equilibrium) Fermi energy ($E_{\rm F} \lesssim$ 0.1 eV for our experiments) broadening of the carrier distribution involves interband transitions - interband heating. At higher Fermi energy ($E_{\rm F} \gtrsim$ 0.15 eV) broadening of the carrier distribution involves intraband transitions - intraband heating. Under certain conditions, additional electron-hole pairs can be created (carrier multiplication) for low $E_{\rm F}$, and hot carriers (hot-carrier multiplication) for higher $E_{\rm F}$. The resultant photoconductivity is positive (negative) for low (high) $E_{\rm F}$, which originates from the effect of the heated carrier distributions on the screening of impurities, consistent with the DC conductivity being mostly due to impurity scattering. The importance of these insights is highlighted by a discussion of the implications for graphene photodetector applications.
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Submitted 7 December, 2017;
originally announced December 2017.
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Out-of-plane heat transfer in van der Waals stacks: electron-hyperbolic phonon coupling
Authors:
K. J. Tielrooij,
N. C. H. Hesp,
A. Principi,
M. Lundeberg,
E. A. A. Pogna,
L. Banszerus,
Z. Mics,
M. Massicotte,
P. Schmidt,
D. Davydovskaya,
D. G. Purdie,
I. Goykhman,
G. Soavi,
A. Lombardo,
K. Watanabe,
T. Taniguchi,
M. Bonn,
D. Turchinovich,
C. Stampfer,
A. C. Ferrari,
G. Cerullo,
M. Polini,
F. H. L. Koppens
Abstract:
Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting require a thorough understanding of (nanoscale) heat flow. Here, using…
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Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting require a thorough understanding of (nanoscale) heat flow. Here, using time-resolved photocurrent measurements we identify an efficient out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon polaritons in the encapsulating layered material. This hyperbolic cooling is particularly efficient, giving picosecond cooling times, for hexagonal BN, where the high-momentum hyperbolic phonon polaritons enable efficient near-field energy transfer. We study this heat transfer mechanism through distinct control knobs to vary carrier density and lattice temperature, and find excellent agreement with theory without any adjustable parameters. These insights may lead to the ability to control heat flow in van der Waals heterostructures.
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Submitted 4 December, 2017; v1 submitted 13 February, 2017;
originally announced February 2017.
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Super-Planckian electron cooling in a van der Waals stack
Authors:
Alessandro Principi,
Mark B. Lundeberg,
Niels C. H. Hesp,
Klaas-Jan Tielrooij,
Frank H. L. Koppens,
Marco Polini
Abstract:
Radiative heat transfer (RHT) between macroscopic bodies at separations that are much smaller than the thermal wavelength is ruled by evanescent electromagnetic modes and can be orders of magnitude more efficient than its far-field counterpart, which is described by the Stefan-Boltzmann law. In this Letter we present a microscopic theory of RHT in van der Waals stacks comprising graphene and a nat…
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Radiative heat transfer (RHT) between macroscopic bodies at separations that are much smaller than the thermal wavelength is ruled by evanescent electromagnetic modes and can be orders of magnitude more efficient than its far-field counterpart, which is described by the Stefan-Boltzmann law. In this Letter we present a microscopic theory of RHT in van der Waals stacks comprising graphene and a natural hyperbolic material, i.e. hexagonal boron nitride (hBN). We demonstrate that RHT between hot carriers in graphene and hyperbolic phonon-polaritons in hBN is extremely efficient at room temperature, leading to picosecond time scales for the carrier cooling dynamics.
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Submitted 4 August, 2016;
originally announced August 2016.
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Phonon-mediated mid-infrared photoresponse of graphene
Authors:
Michela Badioli,
Achim Woessner,
Klaas-Jan Tielrooij,
Sébastien Nanot,
Gabriele Navickaite,
Tobias Stauber,
F. Javier García de Abajo,
Frank H. L. Koppens
Abstract:
The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spa…
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The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm$^{-1}$). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO$_2$ substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.
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Submitted 18 January, 2016;
originally announced January 2016.
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Photo-thermionic effect in vertical graphene heterostructures
Authors:
Mathieu Massicotte,
Peter Schmidt,
Fabien Vialla,
Kenji Watanabe,
Takashi Taniguchi,
Klaas-Jan Tielrooij,
Frank H. L. Koppens
Abstract:
Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the thermal energy added to the free-electron bath as a result of light absorption. Successful implementation of this strategy requires a broadband absorber where carrie…
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Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the thermal energy added to the free-electron bath as a result of light absorption. Successful implementation of this strategy requires a broadband absorber where carriers interact among themselves more strongly than with phonons, as well as energy-selective contacts to extract the excess electronic heat. Here we show that graphene-WSe2-graphene heterostructure devices offer this possibility through the photo-thermionic effect: the absorbed photon energy in graphene is efficiently transferred to the electron bath, leading to a thermalized hot carrier distribution. Carriers with energy higher than the Schottky barrier between graphene and WSe2 can be emitted over the barrier, thus creating photocurrent. We experimentally demonstrate that the photo-thermionic effect enables detection of sub-bandgap photons, while being size-scalable, electrically tunable, broadband and ultrafast.
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Submitted 10 June, 2016; v1 submitted 16 January, 2016;
originally announced January 2016.
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Picosecond photoresponse in van der Waals heterostructures
Authors:
Mathieu Massicotte,
Peter Schmidt,
Fabien Vialla,
Kevin G. Schädler,
Antoine Reserbat-Plantey,
Kenji Watanabe,
Takashi Taniguchi,
Klaas-Jan Tielrooij,
Frank H. L. Koppens
Abstract:
Two-dimensional (2D) crystals, such as graphene and transition metal dichalcogenides (TMDs), present a collection of unique and complementary optoelectronic properties. Assembling different 2D materials in vertical heterostructures enables the combination of these properties in one device, thus creating multi-functional optoelectronic systems with superior performance. Here we demonstrate that gra…
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Two-dimensional (2D) crystals, such as graphene and transition metal dichalcogenides (TMDs), present a collection of unique and complementary optoelectronic properties. Assembling different 2D materials in vertical heterostructures enables the combination of these properties in one device, thus creating multi-functional optoelectronic systems with superior performance. Here we demonstrate that graphene/WSe2/graphene heterostructures ally the high photodetection efficiency of TMDs with a picosecond photoresponse comparable to that of graphene, thereby optimizing both speed and efficiency in a single photodetector. We follow in time the extraction of photoexcited carriers in these devices using time-resolved photocurrent measurements and demonstrate a photoresponse time as short as 5.5 ps, which we tune by applying a bias and by varying the TMD layer thickness. Our study provides direct insight into the physical processes governing the detection speed and quantum efficiency of these van der Waals (vdW) heterostuctures, such as out-of-plane carrier drift and recombination. The observation and understanding of ultrafast and efficient photodetection demonstrate the potential of hybrid TMD-based heterostructures as a platform for future optoelectronic devices.
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Submitted 27 January, 2016; v1 submitted 22 July, 2015;
originally announced July 2015.
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Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating
Authors:
Klaas-Jan Tielrooij,
Lukasz Piatkowski,
Mathieu Massicotte,
Achim Woessner,
Qiong Ma,
Yong** Lee,
Kevin Scott Myhro,
Chun Ning Lau,
Pablo Jarillo-Herrero,
Niek F. van Hulst,
Frank H. L. Koppens
Abstract:
Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrie…
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Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrier heating time. Here, we measure the photovoltage generation time and find it to be faster than 50 femtoseconds. As a proof-of-principle application of this ultrafast photodetector, we use graphene to directly measure, electrically, the pulse duration of a sub-50 femtosecond laser pulse. The observation that carrier heating is ultrafast suggests that energy from absorbed photons can be efficiently transferred to carrier heat. To study this, we examine the spectral response and find a constant spectral responsivity between 500 and 1500 nm. This is consistent with efficient electron heating. These results are promising for ultrafast femtosecond and broadband photodetector applications.
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Submitted 24 April, 2015;
originally announced April 2015.
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Hot-carrier photocurrent effects at graphene-metal interfaces
Authors:
K. J. Tielrooij,
M. Massicotte,
L. Piatkowski,
A. Woessner,
Q. Ma,
P. Jarillo-Herrero,
N. F. van Hulst,
F. H. L. Koppens
Abstract:
Photoexcitation of graphene leads to an interesting sequence of phenomena, some of which can be exploited in optoelectronic devices based on graphene. In particular, the efficient and ultrafast generation of an electron distribution with an elevated electron temperature and the concomitant generation of a photo-thermoelectric voltage at symmetry-breaking interfaces is of interest for photosensing…
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Photoexcitation of graphene leads to an interesting sequence of phenomena, some of which can be exploited in optoelectronic devices based on graphene. In particular, the efficient and ultrafast generation of an electron distribution with an elevated electron temperature and the concomitant generation of a photo-thermoelectric voltage at symmetry-breaking interfaces is of interest for photosensing and light harvesting. Here, we experimentally study the generated photocurrent at the graphene-metal interface, focusing on the time-resolved photocurrent, the effects of photon energy, Fermi energy and light polarization. We show that a single framework based on photo-thermoelectric photocurrent generation explains all experimental results.
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Submitted 20 November, 2014;
originally announced November 2014.
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Competing Ultrafast Energy Relaxation Pathways in Photoexcited Graphene
Authors:
Soeren A. Jensen,
Zoltan Mics,
Ivan Ivanov,
H. Samet Varol,
Dmitry Turchinovich,
Frank. H. L. Koppens,
Mischa Bonn,
Klaas-Jan Tielrooij
Abstract:
For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing pathways: carrier-carrier scattering -- creating an elevated carrier temperature -- and optical phonon emission. At present, it is not clear what determines the domina…
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For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing pathways: carrier-carrier scattering -- creating an elevated carrier temperature -- and optical phonon emission. At present, it is not clear what determines the dominating relaxation pathway. Here we reach a unifying picture of the ultrafast energy relaxation by investigating the terahertz photoconductivity, while varying the Fermi energy, photon energy, and fluence over a wide range. We find that sufficiently low fluence ($\lesssim$ 4 $μ$J/cm$^2$) in conjunction with sufficiently high Fermi energy ($\gtrsim$ 0.1 eV) gives rise to energy relaxation that is dominated by carrier-carrier scattering, which leads to efficient carrier heating. Upon increasing the fluence or decreasing the Fermi energy, the carrier heating efficiency decreases, presumably due to energy relaxation that becomes increasingly dominated by phonon emission. Carrier heating through carrier-carrier scattering accounts for the negative photoconductivity for doped graphene observed at terahertz frequencies. We present a simple model that reproduces the data for a wide range of Fermi levels and excitation energies, and allows us to qualitatively assess how the branching ratio between the two distinct relaxation pathways depends on excitation fluence and Fermi energy.
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Submitted 3 October, 2014;
originally announced October 2014.
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Electrical Control of Optical Emitter Relaxation Pathways enabled by Graphene
Authors:
K. J. Tielrooij,
L. Orona,
A. Ferrier,
M. Badioli,
G. Navickaite,
S. Coop,
S. Nanot,
B. Kalinic,
T. Cesca,
L. Gaudreau,
Q. Ma,
A. Centeno,
A. Pesquera,
A. Zurutuza,
H. de Riedmatten,
P. Goldner,
F. J. García de Abajo,
P. Jarillo-Herrero,
F. H. L. Koppens
Abstract:
Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active contro…
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Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active control of the energy flow has remained challenging. Here, we demonstrate in-situ electrical control of the relaxation pathways of excited erbium ions, which emit light at the technologically relevant telecommunication wavelength of 1.5 $μ$m. By placing the erbium at a few nanometres distance from graphene, we modify the relaxation rate by more than a factor of three, and control whether the emitter decays into either electron-hole pairs, emitted photons or graphene near-infrared plasmons, confined to $<$15 nm to the sheet. These capabilities to dictate optical energy transfer processes through electrical control of the local density of optical states constitute a new paradigm for active (quantum) photonics.
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Submitted 3 October, 2014;
originally announced October 2014.
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Universal Distance-Scaling of Non-radiative Energy Transfer to Graphene
Authors:
L. Gaudreau,
K. J. Tielrooij,
G. E. D. K. Prawiroatmodjo,
J. Osmond,
F. J. Garcia de Abajo,
F. H. L. Koppens
Abstract:
The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The obser…
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The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The observed energy transfer- rate is in agreement with a 1/d^4 dependence that is characteristic of 2D lossy media. The emitter decay rate is enhanced 90 times (transfer efficiency of ~99%) with respect to the decay in vacuum at distances d ~ 5 nm. This high energy-transfer rate is mainly due to the two-dimensionality and gapless character of the monoatomic carbon layer. Graphene is thus shown to be an extraordinary energy sink, holding great potential for photodetection, energy harvesting, and nanophotonics.
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Submitted 20 January, 2013;
originally announced January 2013.
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Photo-excitation Cascade and Multiple Carrier Generation in Graphene
Authors:
K. J. Tielrooij,
J. C. W. Song,
S. A. Jensen,
A. Centeno,
A. Pesquera,
A. Zurutuza Elorza,
M. Bonn,
L. S. Levitov,
F. H. L. Koppens
Abstract:
The conversion of light into free electron-hole pairs constitutes the key process in the fields of photodetection and photovoltaics. The efficiency of this process depends on the competition of different relaxation pathways and can be greatly enhanced when photoexcited carriers do not lose energy as heat, but instead transfer their excess energy into the production of additional electron-hole pair…
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The conversion of light into free electron-hole pairs constitutes the key process in the fields of photodetection and photovoltaics. The efficiency of this process depends on the competition of different relaxation pathways and can be greatly enhanced when photoexcited carriers do not lose energy as heat, but instead transfer their excess energy into the production of additional electron-hole pairs via carrier-carrier scattering processes. Here we use Optical pump - Terahertz probe measurements to show that in graphene carrier-carrier scattering is unprecedentedly efficient and dominates the ultrafast energy relaxation of photoexcited carriers, prevailing over optical phonon emission in a wide range of photon wavelengths. Our results indicate that this leads to the production of secondary hot electrons, originating from the conduction band. Since hot electrons in graphene can drive currents, multiple hot carrier generation makes graphene a promising material for highly efficient broadband extraction of light energy into electronic degrees of freedom, enabling high-efficiency optoelectronic applications.
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Submitted 25 January, 2013; v1 submitted 3 October, 2012;
originally announced October 2012.
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Photo-excited Carrier Dynamics and Impact Excitation Cascade in Graphene
Authors:
Justin C. W. Song,
Klaas J. Tielrooij,
Frank H. L. Koppens,
Leonid S. Levitov
Abstract:
Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair excitations has a strong dependence on do**, which makes carrier multiplication gate-tunable. We also predict that the number of excited pairs as well as the characteri…
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Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair excitations has a strong dependence on do**, which makes carrier multiplication gate-tunable. We also predict that the number of excited pairs as well as the characteristic time of the cascade scale linearly with photo-excitation energy. These dependences, as well as sharply peaked angular distribution of pair excitations, provide clear experimental signatures of carrier multiplication.
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Submitted 19 September, 2012;
originally announced September 2012.
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High fidelity measurement of singlet-triplet states in a quantum dot
Authors:
T. Meunier,
K-J. Tielrooij,
I. T. Vink,
F. H. L. Koppens,
H. P. Tranitz,
W. Wegscheider,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We demonstrate experimentally a read-out method that distinguishes between two-electron spin states in a quantum dot. This scheme combines the advantages of the two existing mechanisms for spin-to-charge conversion with single-shot charge detection: a large difference in energy between the two states and a large difference in tunnel rate between the states and a reservoir. As a result, a spin me…
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We demonstrate experimentally a read-out method that distinguishes between two-electron spin states in a quantum dot. This scheme combines the advantages of the two existing mechanisms for spin-to-charge conversion with single-shot charge detection: a large difference in energy between the two states and a large difference in tunnel rate between the states and a reservoir. As a result, a spin measurement fidelity of 97% was achieved, which is much higher than previously reported fidelities.
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Submitted 8 December, 2006; v1 submitted 7 December, 2006;
originally announced December 2006.
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Experimental signature of phonon-mediated spin relaxation
Authors:
T. Meunier,
I. T. Vink,
L. H. Willems van Beveren,
K-J. Tielrooij,
R. Hanson,
F. H. L. Koppens,
H. P. Tranitz,
W. Wegscheider,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We observe an experimental signature of the role of the phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magnetic field and the electrostatic confinement potential, we change the singlet-triplet energy splitting from 1.3 meV to zero and observe that the spin relaxation time depends non-monotonously on the energy splitting. A sim…
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We observe an experimental signature of the role of the phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magnetic field and the electrostatic confinement potential, we change the singlet-triplet energy splitting from 1.3 meV to zero and observe that the spin relaxation time depends non-monotonously on the energy splitting. A simple theoretical model is derived to capture the underlying physical mechanism. The present experiment confirms that spin-flip energy is dissipated in the phonon bath.
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Submitted 28 September, 2006;
originally announced September 2006.
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Driven coherent oscillations of a single electron spin in a quantum dot
Authors:
F. H. L. Koppens,
C. Buizert,
K. J. Tielrooij,
I. T. Vink,
K. C. Nowack,
T. Meunier,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
The ability to control the quantum state of a single electron spin in a quantum dot is at the heart of recent developments towards a scalable spin-based quantum computer. In combination with the recently demonstrated exchange gate between two neighbouring spins, driven coherent single spin rotations would permit universal quantum operations. Here, we report the experimental realization of single…
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The ability to control the quantum state of a single electron spin in a quantum dot is at the heart of recent developments towards a scalable spin-based quantum computer. In combination with the recently demonstrated exchange gate between two neighbouring spins, driven coherent single spin rotations would permit universal quantum operations. Here, we report the experimental realization of single electron spin rotations in a double quantum dot. First, we apply a continuous-wave oscillating magnetic field, generated on-chip, and observe electron spin resonance in spin-dependent transport measurements through the two dots. Next, we coherently control the quantum state of the electron spin by applying short bursts of the oscillating magnetic field and observe about eight oscillations of the spin state (so-called Rabi oscillations) during a microsecond burst. These results demonstrate the feasibility of operating single-electron spins in a quantum dot as quantum bits.
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Submitted 21 August, 2006;
originally announced August 2006.
