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Transient Stability Assessment of Cascade Trip** of Renewable Sources Using SOS
Authors:
Chetan Mishra,
James S. Thorp,
Anamitra Pal,
Virgilio A. Centeno
Abstract:
There has been significant increase in penetration of renewable generation (RG) sources all over the world. Localized concentration of many such generators could initiate a cascade trip** sequence that might threaten the stability of the entire system. Understanding the impact of cascade trip** process would help the system planner identify trip sequences that must be blocked in order to incre…
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There has been significant increase in penetration of renewable generation (RG) sources all over the world. Localized concentration of many such generators could initiate a cascade trip** sequence that might threaten the stability of the entire system. Understanding the impact of cascade trip** process would help the system planner identify trip sequences that must be blocked in order to increase stability. In this work, we attempt to understand the consequences of cascade trip** mechanism through a Lyapunov approach. A conservative definition for the stability region (SR) along with its estimation for a given cascading sequence using sum of squares (SOS) programming is proposed. Finally, a simple probabilistic definition of the SR is used to visualize the risk of instability and understand the impact of blocking trip sequences. A 3-machine system with significant RG penetration is used to demonstrate the idea.
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Submitted 12 February, 2018;
originally announced February 2018.
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Estimating Relevant Portion of Stability Region using Lyapunov Approach and Sum of Squares
Authors:
Chetan Mishra,
James S. Thorp,
Virgilio A. Centeno,
Anamitra Pal
Abstract:
Traditional Lyapunov based transient stability assessment approaches focus on identifying the stability region (SR) of the equilibrium point under study. When trying to estimate this region using Lyapunov functions, the shape of the final estimate is often limited by the degree of the function chosen, a limitation that results in conservativeness in the estimate of the SR. More conservative the es…
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Traditional Lyapunov based transient stability assessment approaches focus on identifying the stability region (SR) of the equilibrium point under study. When trying to estimate this region using Lyapunov functions, the shape of the final estimate is often limited by the degree of the function chosen, a limitation that results in conservativeness in the estimate of the SR. More conservative the estimate is in a particular region of state space, smaller is the estimate of the critical clearing time for disturbances that drive the system towards that region. In order to reduce this conservativeness, we propose a methodology that uses the disturbance trajectory data to skew the shape of the final Lyapunov based SR estimate. We exploit the advances made in the theory of sum of squares decomposition to algorithmically estimate this region. The effectiveness of this technique is demonstrated on a power systems classical model.
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Submitted 20 October, 2017;
originally announced October 2017.
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Stability Region Estimation Under Low Voltage Ride Through Constraints using Sum of Squares
Authors:
Chetan Mishra,
James S. Thorp,
Virgilio A. Centeno,
Anamitra Pal
Abstract:
The increasing penetration of inverter based renewable generation (RG) in the form of solar photo-voltaic (PV) or wind has introduced numerous operational challenges and uncertainties. According to the standards, these generators are made to trip offline if their operating requirements are not met. In an RG-rich system, this might alter the system dynamics and/or cause shifting of the equilibrium…
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The increasing penetration of inverter based renewable generation (RG) in the form of solar photo-voltaic (PV) or wind has introduced numerous operational challenges and uncertainties. According to the standards, these generators are made to trip offline if their operating requirements are not met. In an RG-rich system, this might alter the system dynamics and/or cause shifting of the equilibrium points to the extent that a cascaded trip** scenario is manifested. The present work attempts at avoiding such scenarios by estimating the constrained stability region (CSR) inside which the system must operate using maximal level set of a Lyapunov function estimated through sum of squares (SOS) technique. A time-independent conservative approximation of the LVRT constraint is initially derived for a classical model of the power system. The proposed approach is eventually validated by evaluating the stability of a 3 machine test system with trip-able RG.
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Submitted 28 June, 2017;
originally announced June 2017.
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Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Authors:
Wei Yi,
Andrey A. Kiselev,
Jacob Thorp,
Ramsey Noah,
Binh-Minh Nguyen,
Steven Bui,
Rajesh D. Rajavel,
Tahir Hussain,
Mark Gyure,
Philip Kratz,
Qi Qian,
Michael J. Manfra,
Vlad S. Pribiag,
Leo P. Kouwenhoven,
Charles M. Marcus,
Marko Sokolich
Abstract:
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is…
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Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.
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Submitted 23 March, 2015;
originally announced March 2015.
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Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Authors:
Fanming Qu,
Arjan J. A. Beukman,
Stevan Nadj-Perge,
Michael Wimmer,
Binh-Minh Nguyen,
Wei Yi,
Jacob Thorp,
Marko Sokolich,
Andrey A. Kiselev,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and c…
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Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.
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Submitted 19 February, 2015;
originally announced February 2015.
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High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Authors:
Binh-Minh Nguyen,
Wei Yi,
Ramsey Noah,
Jacob Thorp,
Marko Sokolich
Abstract:
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need…
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We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.
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Submitted 15 December, 2014;
originally announced December 2014.
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Abnormality of the placental vasculature affects placental thickness
Authors:
Michael Yampolsky,
Carolyn M. Salafia,
Oleksandr Shlakhter,
Danielle Haas,
Barbara Eucker,
John Thorp
Abstract:
Our empirical modeling suggests that deformation of placental vascular growth is associated with abnormal placental chorionic surface shape. Altered chorionic surface shape is associated with lowered placental functional efficiency. We hypothesize that placentas with deformed chorionic surface vascular trees and reduced functional efficiency also have irregular vascular arborization that will be r…
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Our empirical modeling suggests that deformation of placental vascular growth is associated with abnormal placental chorionic surface shape. Altered chorionic surface shape is associated with lowered placental functional efficiency. We hypothesize that placentas with deformed chorionic surface vascular trees and reduced functional efficiency also have irregular vascular arborization that will be reflected in increased variability of placental thickness and a lower mean thickness.
We find that non-centrality of the umbilical cord insertion is strongly and significantly correlated with disk thickness (Spearman's rho=0.128, p=0.002). Deformed shape is strongly and significantly associated with lower overall thickness and higher variability of thickness with beta between -0.173 and -0.254 (p<0.001) . Both lower mean thickness and high variability of thickness are strongly correlated with higher beta (reduced placental efficiency) (p<0.001 and p=0.038 respectively). Greater thickness variability is correlated with higher beta independent of the other placental shape variables p=0.004.
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Submitted 10 January, 2011;
originally announced January 2011.
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Modeling the variability of shapes of a human placenta
Authors:
Michael Yampolsky,
Carolyn M. Salafia,
Oleksandr Shlakhter,
Danielle Haas,
Barbara Eucker,
John Thorp
Abstract:
While it is well-understood what a normal human placenta should look like, a deviation from the norm can take many possible shapes. In this paper we propose a mechanism for this variability based on the change in the structure of the vascular tree.
While it is well-understood what a normal human placenta should look like, a deviation from the norm can take many possible shapes. In this paper we propose a mechanism for this variability based on the change in the structure of the vascular tree.
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Submitted 3 January, 2008; v1 submitted 5 November, 2007;
originally announced November 2007.
