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Implementing the Diverting Fast Radix Algorithm
Authors:
Stuart Thiel,
Larry Thiel,
Gregory Butler
Abstract:
This paper presents ThielSort, a practical implementation of the Diverting Fast Radix (DFR) Algorithm. The theoretical improvements over classical radix sorts are outlined and implementation details are specified to demonstrate that the algorithm is competitive with the state of the art. The effectiveness of this implementation of the DFR algorithm is shown by considering a variety of standard dis…
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This paper presents ThielSort, a practical implementation of the Diverting Fast Radix (DFR) Algorithm. The theoretical improvements over classical radix sorts are outlined and implementation details are specified to demonstrate that the algorithm is competitive with the state of the art. The effectiveness of this implementation of the DFR algorithm is shown by considering a variety of standard distributions of data and input sizes.
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Submitted 31 July, 2022; v1 submitted 28 July, 2022;
originally announced July 2022.
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Dynamical response and confinement of the electrons at the LaAlO3/SrTiO3 interface
Authors:
A. Dubroka,
M. Roessle,
K. W. Kim,
V. K. Malik,
L. Schulz,
S. Thiel,
C. W. Schneider,
J. Mannhart,
G. Herranz,
O. Copie,
M. Bibes,
A. Barthelemy,
C. Bernhard
Abstract:
With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi1-xNbxO3 and therefore suggestive of polaronic correlations of the confined carriers. We also det…
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With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi1-xNbxO3 and therefore suggestive of polaronic correlations of the confined carriers. We also determined the vertical density profile which has a strongly asymmetric shape with a rapid initial decay over the first 2 nm and a pronounced tail that extends to about 11 nm.
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Submitted 5 October, 2009;
originally announced October 2009.
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Two-dimensional electron liquid state at LaAlO3-SrTiO3 interfaces
Authors:
M. Breitschaft,
V. Tinkl,
N. Pavlenko,
S. Thiel,
C. Richter,
J. R. Kirtley,
Y. C. Liao,
G. Hammerl,
V. Eyert,
T. Kopp,
J. Mannhart
Abstract:
Using tunneling spectroscopy we have measured the spectral density of states of the mobile, two-dimensional electron system generated at the LaAlO3-SrTiO3 interface. As shown by the density of states the interface electron system differs qualitatively, first, from the electron systems of the materials defining the interface and, second, from the two-dimensional electron gases formed at interfaces…
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Using tunneling spectroscopy we have measured the spectral density of states of the mobile, two-dimensional electron system generated at the LaAlO3-SrTiO3 interface. As shown by the density of states the interface electron system differs qualitatively, first, from the electron systems of the materials defining the interface and, second, from the two-dimensional electron gases formed at interfaces between conventional semiconductors.
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Submitted 4 May, 2010; v1 submitted 7 July, 2009;
originally announced July 2009.
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Polar catastrophe and electronic reconstructions at the LaAlO3/SrTiO3 interface: evidence from optical second harmonic generation
Authors:
A. Savoia,
D. Paparo,
P. Perna,
Z. Ristic,
M. Salluzzo,
F. Miletto Granozio,
U. Scotti di Uccio,
C. Richter,
S. Thiel,
J. Mannhart,
L. Marrucci
Abstract:
The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized int…
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The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer.
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Submitted 4 September, 2009; v1 submitted 21 January, 2009;
originally announced January 2009.
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Orbital reconstruction and two-dimensional electron gas at the LaAlO3/SrTiO3 interface
Authors:
M. Salluzzo,
G. Ghiringhelli,
J. C. Cezar,
N. B. Brookes,
V. Bisogni,
G. M. De Luca,
C. Richter,
S. Thiel,
J. Mannhart,
M. Huijben,
A. Brinkman,
G. Rijnders
Abstract:
Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular inte…
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Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular interest is the LaAlO3/SrTiO3 system, because it features especially striking properties. High carrier mobility [1], electric field tuneable superconductivity [2] and magnetic effects [3], have been found. Here we show that an orbital reconstruction is underlying the generation of the electron gas at the LaAlO3/SrTiO3 n-type interface. Our results are based on extensive investigations of the electronic properties and of the orbital structure of the interface using X-ray Absorption Spectroscopy. In particular we find that the degeneracy of the Ti 3d states is fully removed, and that the Ti 3dxy levels become the first available states for conducting electrons.
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Submitted 8 December, 2008;
originally announced December 2008.
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Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures by hard X-ray photoelectron spectroscopy
Authors:
M. Sing,
G. Berner,
K. Goss,
A. Muller,
A. Ruff,
A. Wetscherek,
S. Thiel,
J. Mannhart,
S. A. Pauli,
C. W. Schneider,
P. R. Willmott,
M. Gorgoi,
F. Schafers,
R. Claessen
Abstract:
The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO$_3$ overlayers. Our results point to an electronic reconstruc…
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The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO$_3$ overlayers. Our results point to an electronic reconstruction in the LaAlO$_3$ overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.
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Submitted 30 April, 2009; v1 submitted 11 September, 2008;
originally announced September 2008.
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Electric Field Control of the LaAlO$_{3}$/SrTiO$_{3}$ Interface Ground State
Authors:
A. D. Caviglia,
S. Gariglio,
N. Reyren,
D. Jaccard,
T. Schneider,
M. Gabay,
S. Thiel,
G. Hammerl,
J. Mannhart,
J. -M. Triscone
Abstract:
Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A p…
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Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO$_{3}$ and SrTiO$_{3}$, which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits
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Submitted 3 July, 2008;
originally announced July 2008.
