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Symmetry of the coupling between surface acoustic waves and spin waves in synthetic antiferromagnets
Authors:
R. Lopes Seeger,
L. La Spina,
V. Laude,
F. Millo,
A. Bartasyte,
S. Margueron,
A. Solignac,
G. de Loubens,
L. Thevenard,
C. Gourdon,
C. Chappert,
T. Devolder
Abstract:
Synthetic antiferromagnets host spin waves that are highly tunable. It is of practical interest to analyze the symmetry of their coupling to surface acoustic waves with the design of hybrid devices in view. For this we calculate the layer-resolved susceptibility tensor of a synthetic antiferromagnet, the effective magneto-elastic and magneto-rotation fields associated to a travelling elastic wave,…
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Synthetic antiferromagnets host spin waves that are highly tunable. It is of practical interest to analyze the symmetry of their coupling to surface acoustic waves with the design of hybrid devices in view. For this we calculate the layer-resolved susceptibility tensor of a synthetic antiferromagnet, the effective magneto-elastic and magneto-rotation fields associated to a travelling elastic wave, and the power irreversibly transferred by the elastic wave to the magnetic layers. We consider Rayleigh-type surface acoustic waves: (a) that travel in an elastically isotropic, non-piezoelectric substrate, or (b) that propagate along the X direction at the surface of a Z-cut LiNbO$_3$ substrate, or (c) that are guided in a thin Z-cut LiNbO$_3$ film grown on a sapphire substrate. In particular, we show that the complementary angular dependencies of the acoustic and optical spin wave modes in synthetic antiferromagnets makes it possible to excite spin waves for any relative orientation of magnetization and acoustic wavevector. In addition, we discuss the symmetries of the driving fields and of the energy transferred to the magnetic degree of freedom. We evidence new interaction channels coupling the magnetization eigenmodes when elastic anisotropy and piezoelectricity of the substrate are considered.
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Submitted 26 June, 2024; v1 submitted 4 January, 2024;
originally announced January 2024.
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Optical probing of Rayleigh wave driven magneto-acoustic resonance
Authors:
Piotr Kuszewski,
Jean-Yves Duquesne,
Loic Becerra,
Aristide Lemaître,
Serge Vincent,
Silbe Majrab,
Florent Margaillan,
Catherine Gourdon,
Laura Thevenard
Abstract:
The resonant interaction of electrically excited travelling surface acoustic waves and magnetization has been hitherto probed through the acoustic component. In this work it is investigated using time-resolved magneto-optical detection of magnetization dynamics. To that end, we develop an experimental scheme where laser pulses are used both to generate the acoustic wave frequency and to probe magn…
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The resonant interaction of electrically excited travelling surface acoustic waves and magnetization has been hitherto probed through the acoustic component. In this work it is investigated using time-resolved magneto-optical detection of magnetization dynamics. To that end, we develop an experimental scheme where laser pulses are used both to generate the acoustic wave frequency and to probe magnetization dynamics thus ensuring perfect phase locking. The light polarization dependence of the signal enables to disentangle elasto-optic and magneto-optic contributions and to obtain the in-plane and out-of-plane dynamic magnetization components. Magnetization precession is proved to be driven solely by the acoustic wave. Its amplitude is shown to resonate at the same field at which we detect piezo-electrically the resonant attenuation of the acoustic wave, clearly evidencing the magneto-acoustic resonance with high sensitivity.
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Submitted 29 June, 2018;
originally announced June 2018.
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Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector
Authors:
Piotr Kuszewski,
Ibrahima S. Camara,
Nicolas Biarrotte,
Loic Becerra,
Jürgen von Bardeleben,
A. Lemaître,
Catherine Gourdon,
Jean-Yves Duquesne,
Laura Thevenard
Abstract:
We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The…
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We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magnetic axis. Large characteristic filament-like domains are formed in the latter case. Micromagnetic simulations clearly confirm that this multi-domain configuration is compatible with a resonant precessional mechanism. The reversed domains are in both geometries several hundreds of μm^2, much larger than has been shown using spin transfer torque- or field-driven precessional switching. We show that surface acoustic waves can travel at least 1mm before addressing a given area, and can interfere to create magnetic stripes that can be positionned with a sub-micronic precision.
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Submitted 28 February, 2018;
originally announced February 2018.
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Strong reduction of the coercivity by a surface acoustic wave in an out-of-plane magnetized epilayer
Authors:
Laura Thevenard,
Ibrahima Sock Camara,
Jean-Yves Prieur,
Pauline Rovillain,
Aristide Lemaître,
Catherine Gourdon,
Jean-Yves Duquesne
Abstract:
Inverse magnetostriction is the effect by which magnetization can be changed upon application of stress/strain. A strain modulation may be created electrically by exciting interdigitated transducers to generate surface acoustic waves (SAWs). Hence SAWs appear as a possible route towards induction-free undulatory magnetic data manipulation. Here we demonstrate experimentally on an out-of-plane magn…
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Inverse magnetostriction is the effect by which magnetization can be changed upon application of stress/strain. A strain modulation may be created electrically by exciting interdigitated transducers to generate surface acoustic waves (SAWs). Hence SAWs appear as a possible route towards induction-free undulatory magnetic data manipulation. Here we demonstrate experimentally on an out-of-plane magnetostrictive layer a reduction of the coercive field of up to 60$\%$ by a SAW, over millimetric distances. A simple model shows that this spectacular effect can be partly explained by the periodic lowering of the strain-dependent domain nucleation energy by the SAW. This proof of concept was done on (Ga,Mn)(As,P), a magnetic semiconductor in which the out-of-plane magnetic anisotropy can be made very weak by epitaxial growth; it should guide material engineering for all-acoustic magnetization switching.
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Submitted 29 February, 2016;
originally announced February 2016.
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Surface acoustic wave driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers
Authors:
Laura Thevenard,
Catherine Gourdon,
Jean-Yves Prieur,
Hans Jürgen von Bardeleben,
Serge Vincent,
Loic Becerra,
Ludovic Largeau,
Jean-Yves Duquesne
Abstract:
Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase o…
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Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase of the transmitted SAW during magnetic field sweeps indicated a clear resonant behavior at a field close to the one calculated to give a precession frequency equal to the SAW frequency. A resonance was observed from 5K to 85K, just below the Curie temperature of the layer. A full analytical treatment of the coupled magnetization/acoustic dynamics showed that the magneto-strictive coupling modifies the elastic constants of the material and accordingly the wave-vector solution to the elastic wave equation. The shape and position of the resonance were well reproduced by the calculations, in particular the fact that velocity (phase) variations resonated at lower fields than the acoustic attenuation variations.
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Submitted 25 June, 2014;
originally announced June 2014.
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Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotracks
Authors:
J. Sampaio,
L. O'Brien,
D. Petit,
D. E. Read,
E. R. Lewis,
H. T. Zeng,
L. Thevenard,
S. Cardoso,
R. P. Cowburn
Abstract:
The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, b…
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The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, but that a travelling DW can also induce the depinning of DWs in near-by tracks. These effects may have great implications for some proposed high density magnetic devices (e.g. racetrack memory, DW logic circuits, or DW-based MRAM).
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Submitted 18 March, 2013;
originally announced March 2013.
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Irreversible magnetization switching using surface acoustic waves
Authors:
Laura Thevenard,
Catherine Gourdon,
Jean-Yves Duquesne,
Emmanuel Peronne,
Hans Jürgen von Bardeleben,
Henri Jaffres,
Sankara Ruttala,
Aristide Lemaître
Abstract:
An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magne…
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An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic system's eigenfrequency is also explored. Finally, another - non-resonant - switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier.
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Submitted 9 January, 2013;
originally announced January 2013.
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Field-induced domain wall propagation: beyond the one-dimensional model
Authors:
L. Thevenard,
C. Gourdon,
S. Haghgoo,
J-P. Adam,
H. J. von Bardeleben,
A. Lemaître,
W. Schoch,
A. Thiaville
Abstract:
We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall (DW) propagation model widely used in spintronics studies of magnetic nanostructures. In the particular regime of layer thickness (h) of the order of the exchange length, anomalous velocity peaks appear in the precessio…
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We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall (DW) propagation model widely used in spintronics studies of magnetic nanostructures. In the particular regime of layer thickness (h) of the order of the exchange length, anomalous velocity peaks appear in the precessional regime, their shape and position shifting with h. This has also been observed experimentally. Analyses of the simulations show a distinct correlation between the curvature of the DW and the twist of the magnetization vector within it, and the velocity peak. Associating a phenomenological description of this twist with a four-coordinate DW propagation model, we reproduce very well these kinks and show that they result from the torque exerted by the stray field created by the domains on the twisted magnetization. The position of the peaks is well predicted from the DW's first flexural mode frequency, and depends strongly on the layer thickness. Comparison of the proposed model to DW propagation data obtained on dilute semiconductor ferromagnets GaMnAs and GaMnAsP sheds light on the origin of the measured peaks.
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Submitted 23 February, 2011;
originally announced February 2011.
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Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)
Authors:
L. Thevenard,
E. Peronne,
C. Gourdon,
C. Testelin,
M. Cubukcu,
E. Charron,
S. Vincent,
A. Lemaitre,
B. Perrin
Abstract:
The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation i…
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The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation induced by the ps-ASP allowed us to model very accurately the resulting signal, and interpret it as the strain modulated reflectivity (differing for $σ_{\pm}$ probe polarizations), independently from dynamic magnetization effects.
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Submitted 21 July, 2010;
originally announced July 2010.
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Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains
Authors:
Sanaz Haghgoo,
Murat Cubukcu,
Hans Jürgen Von Bardeleben,
Laura Thevenard,
Aristide Lemaître,
Catherine Gourdon
Abstract:
The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed for the first time in a diluted magnetic semiconductor. Combining Kerr microscopy…
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The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed for the first time in a diluted magnetic semiconductor. Combining Kerr microscopy, magnetometry and ferromagnetic resonance spectroscopy, the exchange constant and the domain wall width parameter are obtained as a function of temperature. The former quantifies the effective Mn-Mn ferromagnetic interaction. The latter is a key parameter for domain wall dynamics. The comparison with results obtained for (Ga,Mn)As/(Ga,In)As reveals the improved quality of the (Ga,Mn)As$_{1-y}$P$_y$ layers regarding domain wall pinning, an increase of the domain wall width parameter and of the effective Mn-Mn spin coupling. However, at constant Mn do**, no significant increase of this coupling is found with increasing P concentration in the investigated range.
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Submitted 10 May, 2010;
originally announced May 2010.
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Macrospin limit and configurational anisotropy in nanoscale Permalloy triangles
Authors:
Laura Thevenard,
Huang Tao Zeng,
Dorothée Petit,
Russell P. Cowburn
Abstract:
In Permalloy submicron triangles, configurational anisotropy - a higher-order form of shape anisotropy - yields three equivalent easy axes, imposed by the structures' symmetry order. Supported by micromagnetic simulations, an experimental method was devised to evaluate the nanostructure dimensions for which a Stoner-Wohlfarth type of reversal could be used to describe this particular magnetic an…
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In Permalloy submicron triangles, configurational anisotropy - a higher-order form of shape anisotropy - yields three equivalent easy axes, imposed by the structures' symmetry order. Supported by micromagnetic simulations, an experimental method was devised to evaluate the nanostructure dimensions for which a Stoner-Wohlfarth type of reversal could be used to describe this particular magnetic anisotropy. In this regime, a straightforward procedure using an in-plane rotating field allowed us to quantify experimentally the six-fold anisotropy fields for triangles of different thicknesses and sizes.
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Submitted 26 November, 2009;
originally announced November 2009.
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Six-fold configurational anisotropy and magnetic reversal in nanoscale Permalloy triangles
Authors:
Laura Thevenard,
Dorothee Petit,
Huang T. Zeng,
Russell P. Cowburn
Abstract:
Six-fold configurational anisotropy was studied in Permalloy triangles, in which the shape symmetry order yields two energetically non-degenerate micromagnetic configurations of the spins, the so-called "Y" and "buckle" states. A twelve pointed switching astroid was measured using magneto-optical experiments and successfully reproduced numerically, with different polar quadrants identified as sp…
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Six-fold configurational anisotropy was studied in Permalloy triangles, in which the shape symmetry order yields two energetically non-degenerate micromagnetic configurations of the spins, the so-called "Y" and "buckle" states. A twelve pointed switching astroid was measured using magneto-optical experiments and successfully reproduced numerically, with different polar quadrants identified as specific magnetic transitions, thereby giving a comprehensive view of the magnetic reversal in these structures. A detailed analysis highlighted the necessity to include the physical rounding of the structures in the simulations to account for the instability of the Y state.
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Submitted 12 June, 2009;
originally announced June 2009.
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Dam** and magnetic anisotropy of ferromagnetic GaMnAs thin films
Authors:
Kh. Khazen,
H. J. von Bardeleben,
M. Cubukcu,
J. L. Cantin,
V. Novak,
K. Olejnik,
M. Cukr,
L. Thevenard,
A. Lemaitre
Abstract:
The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert dam** factor "alpha" has been determined. At T=4K we obtain a minimum dam** factor of "alpha" = 0.003 for…
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The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert dam** factor "alpha" has been determined. At T=4K we obtain a minimum dam** factor of "alpha" = 0.003 for the compressively stressed layer. Its value is not isotropic. It has a minimum value for the easy axes orientations of the magnetic field and increases with the measuring temperature. Its average value is for both type of films of the order of 0.01 in spite of strong differences in the inhomogeneous linewidth which vary between 20 Oe and 600 Oe for the layers grown on GaAs and GaInAs substrates respectively.
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Submitted 30 September, 2008; v1 submitted 26 September, 2008;
originally announced September 2008.
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Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory
Authors:
Catherine Gourdon,
Alexandre Dourlat,
Vincent Jeudy,
Khashayar Khazen,
Hans Jürgen Von Bardeleben,
Laura Thevenard,
Aristide Lemaître
Abstract:
The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hysteresis, domain theory at thermodynamical equilibrium can be used to determine the micromagnetic parameters. Combining magneto-optical Kerr microscopy, magnetometry and ferromagnetic resonance measurements, we obtain t…
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The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hysteresis, domain theory at thermodynamical equilibrium can be used to determine the micromagnetic parameters. Combining magneto-optical Kerr microscopy, magnetometry and ferromagnetic resonance measurements, we obtain the characteristic parameter for magnetic domains $λ_c$, the domain wall width and specific energy, and the spin stiffness constant as a function of temperature. The nucleation barrier for magnetization reversal and the Walker breakdown velocity for field-driven domain wall propagation are also estimated.
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Submitted 2 October, 2007;
originally announced October 2007.
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Magnetic patterning of (Ga,Mn)As by hydrogen passivation
Authors:
Laura Thevenard,
Audrey Miard,
Laurent Vila,
Giancarlo Faini,
Aristide Lemaître,
Nicolas Vernier,
Jacques Ferré,
Stéphane Fusil
Abstract:
We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passiva…
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We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques.
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Submitted 14 June, 2007;
originally announced June 2007.
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Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties
Authors:
M. Elsen,
H. Jaffres,
R. Mattana,
L. Thevenard,
A. Lemaitre,
J. -M. George
Abstract:
We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated to the increase of both exchange energy $Δ$$_{exch}$ and hole concentration by reduction of the Mn interstitial atom in the top magnetic…
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We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated to the increase of both exchange energy $Δ$$_{exch}$ and hole concentration by reduction of the Mn interstitial atom in the top magnetic electrode. Through a 6x6 band k.p model, we established general phase diagrams of tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) \textit{vs.} (Ga,Mn)As Fermi energy (E$_F$) and spin-splitting parameter (B$_G$). This allows to give a rough estimation of the exchange energy $Δ$$_{exch}$=6B$_G$$\simeq$120 meV and hole concentration p$\simeq1.10^{20}$cm$^{-3}$ of (Ga,Mn)As and beyond gives the general trend of TMR and TAMR \textit{vs.} the selected hole band involved in the tunneling transport.
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Submitted 1 June, 2007;
originally announced June 2007.
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Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Aristide Lemaître,
Khashayar Khazen,
Jürgen Von Bardeleben
Abstract:
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn do** level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and h…
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The magnetic properties of (Ga,Mn)As thin films depend on both the Mn do** level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while maintaining the manganese concentration constant. For such a series of films we have investigated the variation of the magnetization, the easy and hard axes of magnetization, the critical temperatures, the coercive fields and the magnetocrystalline anisotropy constants as a function of temperature using magnetometry, ferromagnetic resonance and magneto-transport measurements. In particular, we evidenced that magnetic easy axes flipped from out-of-plane [001] to in-plane [100] axis, followed by the <110> axes, with increasing hole density and temperature. Our study concluded on a general agreement with mean-field theory predictions of the expected easy axis reversals, and of the weight of uniaxial and cubic anisotropies in this material.
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Submitted 23 February, 2007;
originally announced February 2007.
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Universal conductance fluctuations in epitaxial GaMnAs ferromagnets: structural and spin disorder
Authors:
L. Vila,
R. Giraud,
L. Thevenard,
A. Lemaitre,
F. Pierre,
J. Dufouleur,
D. Mailly,
B. Barbara,
G. Faini
Abstract:
Mesoscopic transport measurements reveal a large effective phase coherence length in epitaxial GaMnAs ferromagnets, contrary to usual 3d-metal ferromagnets. Universal conductance fluctuations of single nanowires are compared for epilayers with a tailored anisotropy. At large magnetic fields, quantum interferences are due to structural disorder only, and an unusual behavior related to hole-induce…
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Mesoscopic transport measurements reveal a large effective phase coherence length in epitaxial GaMnAs ferromagnets, contrary to usual 3d-metal ferromagnets. Universal conductance fluctuations of single nanowires are compared for epilayers with a tailored anisotropy. At large magnetic fields, quantum interferences are due to structural disorder only, and an unusual behavior related to hole-induced ferromagnetism is evidenced, for both quantum interferences and decoherence. At small fields, phase coherence is shown to persist down to zero field, even in presence of magnons, and an additional spin disorder contribution to quantum interferences is observed under domain walls nucleation.
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Submitted 17 September, 2006;
originally announced September 2006.
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Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Gilles Patriarche,
Aristide Lemaître,
Nicolas Vernier,
Jacques Ferré
Abstract:
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threa…
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The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.
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Submitted 17 February, 2006; v1 submitted 16 February, 2006;
originally announced February 2006.
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Voltage-controlled tunneling anisotropic magneto-resistance of a ferromagnetic $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode
Authors:
R. Giraud,
M. Gryglas,
L. Thevenard,
A. Lemaître,
G. Faini
Abstract:
The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an a…
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The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an asymmetric bias-dependence of the anisotropic tunneling magneto-resistance is also observed: a reverse bias highlights the full (Ga,Mn)As valence band states contribution, whereas a forward bias only probes part of the density of states and reveals opposite contributions from two subbands.
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Submitted 2 September, 2005;
originally announced September 2005.
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Tuning the ferromagnetic properties of hydrogenated GaMnAs
Authors:
Laura Thevenard,
Ludovic Largeau,
Olivia Mauguin,
Aristide Lemaître,
Bertrand Theys
Abstract:
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along wi…
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Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along with modifications of the magnetic anisotropy, a behavior consistent with the mean-field theory.
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Submitted 12 January, 2006; v1 submitted 15 April, 2005;
originally announced April 2005.
