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Thermal stress modelling of diamond on GaN/III-Nitride membranes
Authors:
Jerome A. Cuenca,
Matthew D. Smith,
Daniel E. Field,
Fabien C-P. Massabuau,
Soumen Mandal,
James Pomeroy,
David J. Wallis,
Rachel A. Oliver,
Iain Thayne,
Martin Kuball,
Oliver A. Williams
Abstract:
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach,…
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Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 $\pm0.2$ GPa while surface profilometry shows membrane bows as large as \SI{58}{\micro\metre}. This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised.
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Submitted 18 February, 2021;
originally announced February 2021.
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Diabolical Points in Coupled Active Cavities with Quantum Emitters
Authors:
**gnan Yang,
Chenjiang Qian,
Xin Xie,
Kai Peng,
Shiyao Wu,
Feilong Song,
Sibai Sun,
Jianchen Dang,
Yang Yu,
Shushu Shi,
Jiongji He,
Matthew J. Steer,
Iain G. Thayne,
Bei-Bei Li,
Fang Bo,
Yun-Feng Xiao,
Zhanchun Zuo,
Kuijuan **,
Changzhi Gu,
Xiulai Xu
Abstract:
In single microdisks, embedded active emitters intrinsically affect the cavity mode of microdisks, which results in a trivial symmetric backscattering and a low controllability. Here we propose a macroscopical control of the backscattering direction by optimizing the cavity size. The signature of positive and negative backscattering directions in each single microdisk is confirmed with two strongl…
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In single microdisks, embedded active emitters intrinsically affect the cavity mode of microdisks, which results in a trivial symmetric backscattering and a low controllability. Here we propose a macroscopical control of the backscattering direction by optimizing the cavity size. The signature of positive and negative backscattering directions in each single microdisk is confirmed with two strongly coupled microdisks. Furthermore, the diabolical points are achieved at the resonance of two microdisks, which agrees well with the theoretical calculations considering backscattering directions. The diabolical points in active optical structures pave a way to implement quantum information processing with geometric phase in quantum photonic networks.
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Submitted 13 January, 2020;
originally announced January 2020.
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Enhanced Strong Interaction between Nanocavities and p-shell Excitons Beyond the Dipole Approximation
Authors:
Chenjiang Qian,
Xin Xie,
**gnan Yang,
Kai Peng,
Shiyao Wu,
Feilong Song,
Sibai Sun,
Jianchen Dang,
Yang Yu,
Matthew J. Steer,
Iain G. Thayne,
Kuijuan **,
Changzhi Gu,
Xiulai Xu
Abstract:
Large coupling strengths in exciton-photon interactions are important for quantum photonic network, while strong cavity-quantum-dot interactions have been focused on s-shell excitons with small coupling strengths. Here we demonstrate strong interactions between cavities and p-shell excitons with a great enhancement by the \textit{in situ} wave-function control. The p-shell excitons are demonstrate…
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Large coupling strengths in exciton-photon interactions are important for quantum photonic network, while strong cavity-quantum-dot interactions have been focused on s-shell excitons with small coupling strengths. Here we demonstrate strong interactions between cavities and p-shell excitons with a great enhancement by the \textit{in situ} wave-function control. The p-shell excitons are demonstrated with much larger wave-function extents and nonlocal interactions beyond the dipole approximation. Then the interaction is tuned from the nonlocal to local regime by the wave-function shrinking, during which the enhancement is obtained. A large coupling strength of $210\ μ\mathrm{eV}$ has been achieved, indicating the great potential of p-shell excitons for coherent information exchange. Furthermore, we propose a distributed delay model to quantitatively explain the coupling strength variation, revealing the intertwining of excitons and photons beyond the dipole approximation.
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Submitted 28 February, 2019;
originally announced February 2019.
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Two-Photon Rabi Splitting in a Coupled System of a Nanocavity and Exciton Complexes
Authors:
Chenjiang Qian,
Shiyao Wu,
Feilong Song,
Kai Peng,
Xin Xie,
**gnan Yang,
Shan Xiao,
Matthew J. Steer,
Iain G. Thayne,
Chengchun Tang,
Zhanchun Zuo,
Kuijuan **,
Changzhi Gu,
Xiulai Xu
Abstract:
Two-photon Rabi splitting in a cavity-dot system provides a basis for multi-qubit coherent control in quantum photonic network. Here we report on two-photon Rabi splitting in a strongly coupled cavity-dot system. The quantum dot was grown intentionally large in size for large oscillation strength and small biexciton binding energy. Both exciton and biexciton transitions couple to a high quality fa…
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Two-photon Rabi splitting in a cavity-dot system provides a basis for multi-qubit coherent control in quantum photonic network. Here we report on two-photon Rabi splitting in a strongly coupled cavity-dot system. The quantum dot was grown intentionally large in size for large oscillation strength and small biexciton binding energy. Both exciton and biexciton transitions couple to a high quality factor photonic crystal cavity with large coupling strengths over 130 $μ$eV. Furthermore, the small binding energy enables the cavity to simultaneously couple with two exciton states. Thereby two-photon Rabi splitting between biexciton and cavity is achieved, which can be well reproduced by theoretical calculations with quantum master equations.
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Submitted 23 May, 2018;
originally announced May 2018.