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Revealing the bonding nature and electronic structure of early transition metal dihydrides
Authors:
Curran Kalha,
Laura E. Ratcliff,
Giorgio Colombi,
Christoph Schlueter,
Bernard Dam,
Andrei Gloskovskii,
Tien-Lin Lee,
Pardeep K. Thakur,
Prajna Bhatt,
Yujiang Zhu,
Jürg Osterwalder,
Francesco Offi,
Giancarlo Panaccione,
Anna Regoutz
Abstract:
Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understand…
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Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understanding the electronic structure and chemical environment of hydrogen within them remains a key challenge. This work presents a new analytical pathway to explore these aspects in technologically relevant systems using Hard X-ray Photoelectron Spectroscopy (HAXPES) on thin films of two prototypical metal dihydrides: YH$_{2-δ}$ and TiH$_{2-δ}$. By taking advantage of the tunability of synchrotron radiation, a non-destructive depth profile of the chemical states is obtained using core level spectra. Combining experimental valence band spectra collected at varying photon energies with theoretical insights from density functional theory (DFT) calculations, a description of the bonding nature and the role of d versus sp contributions to states near the Fermi energy are provided. Moreover, a reliable determination of the enthalpy of formation is proposed by using experimental values of the energy position of metal s band features close to the Fermi energy in the HAXPES valence band spectra.
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Submitted 25 May, 2023;
originally announced May 2023.
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Capturing the dynamics of Ti diffusion across Ti$_x$W$_{1-x}$/Cu heterostructures using X-ray photoelectron spectroscopy
Authors:
Curran Kalha,
Pardeep K. Thakur,
Tien-Lin Lee,
Michael Reisinger,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SX…
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Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) is used to monitor diffusion in real-time across a proxy device. The device consists of a Si/SiO\textsubscript{2}/Ti$_x$W$_{1-x}$(300 nm)/Cu(25 nm) thin film material stack, with the Ti$_x$W$_{1-x}$ film acting as a diffusion barrier between Si and Cu. The monitoring of diffusion is achieved through the continuous collection of spectra whilst in-situ annealing to 673 K. Ti within the TiW is found to be highly mobile during annealing, diffusing out of the barrier and accumulating at the Cu surface. Increasing the Ti concentration within the Ti$_x$W$_{1-x}$ film increases the quantity of accumulated Ti, and Ti is first detected at the Cu surface at temperatures as low as 550 K. Surprisingly, at low Ti concentrations ($x$ = 0.054), W is also mobile and diffuses alongside Ti. These results provide crucial evidence for the importance of diffusion barrier composition on their efficacy during device application, delivering insights into the mechanisms underlying their effectiveness and limitations.
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Submitted 19 January, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Tackling Disorder in $γ$-Ga$_2$O$_3$
Authors:
Laura E. Ratcliff,
Takayoshi Oshima,
Felix Nippert,
Benjamin M. Janzen,
Elias Kluth,
Rüdiger Goldhahn,
Martin Feneberg,
Piero Mazzolini,
Oliver Bierwagen,
Charlotte Wouters,
Musbah Nofal,
Martin Albrecht,
Jack E. N. Swallow,
Leanne A. H. Jones,
Pardeep K. Thakur,
Tien-Lin Lee,
Curran Kalha,
Christoph Schlueter,
Tim D. Veal,
Joel B. Varley,
Markus R. Wagner,
Anna Regoutz
Abstract:
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent…
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Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby develo** a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.
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Submitted 9 May, 2022;
originally announced May 2022.
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Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach
Authors:
Curran Kalha,
Michael Reisinger,
Pardeep. K. Thakur,
Tien-Lin Lee,
Sriram Venkatesan,
Mark Isaacs,
Robert G. Palgrave,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of ti…
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Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ($\geq$400$^\circ$C). Here, the thermal stability of physical vapour deposited (PVD) TiW/Cu bilayer thin films in Si/SiO\textsubscript{2}(50~nm)/TiW(300~nm)/Cu(25~nm) stacks were characterised in response to annealing at 400$^\circ$C for 0.5~h and 5~h, using a combination of soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) and transmission electron microscopy (TEM). Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallisation. Titanium was shown be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity and the TiW/Cu interface remains stable even after 5~h of annealing.
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Submitted 20 January, 2022;
originally announced January 2022.
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Lifetime effects and satellites in the photoelectron spectrum of tungsten metal
Authors:
Curran Kalha,
Laura E. Ratcliff,
Julio J. Gutiérrez Moreno,
Stephan Mohr,
Mervi Mantsinen,
Nathalie K. Fernando,
Pardeep K. Thakur,
Tien-Lin Lee,
Hsiang-Han Tseng,
Tim S. Nunney,
Juhan M. Kahk,
Johannes Lischner,
Anna Regoutz
Abstract:
Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, i…
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Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of metallic tungsten, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) with reflection electron energy loss spectroscopy (REELS) and a multi-tiered ab-initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and GW+C), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten based mixed-metal systems and holds promise for the re-assessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.
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Submitted 10 September, 2021;
originally announced September 2021.
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Design and realization of topological Dirac fermions on a triangular lattice
Authors:
Maximilian Bauernfeind,
Jonas Erhardt,
Philipp Eck,
Pardeep K. Thakur,
Judith Gabel,
Tien-Lin Lee,
Jörg Schäfer,
Simon Moser,
Domenico Di Sante,
Ralph Claessen,
Giorgio Sangiovanni
Abstract:
Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele's original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with…
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Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele's original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with hexagonal symmetry. Yet, in the majority of cases, this recipe leads to triangular lattices, typically hosting metals or trivial insulators. Here, we conceive and realize "indenene", a triangular monolayer of indium on SiC exhibiting non-trivial valley physics driven by local spin-orbit coupling, which prevails over inversion-symmetry breaking terms. By means of tunneling microscopy of the 2D bulk we identify the quantum spin Hall phase of this triangular lattice and unveil how a hidden honeycomb connectivity emerges from interference patterns in Bloch $p_x \pm ip_y$-derived wave functions.
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Submitted 30 June, 2021;
originally announced June 2021.
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Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction
Authors:
M. Stübinger,
J. Gabel,
P. Scheiderer,
M. Zapf,
M. Schmitt,
P. Schütz,
B. Leikert,
J. Küspert,
M. Kamp,
P. K. Thakur,
T. -L. Lee,
P. Potapov,
A. Lubk,
B. Büchner,
M. Sing,
R. Claessen
Abstract:
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer rema…
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The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.
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Submitted 26 May, 2021;
originally announced May 2021.
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Thermal and Oxidation Stability of Ti$_x$W$_{1-x}$ Diffusion Barriers Investigated by Soft and Hard X-ray Photoelectron Spectroscopy
Authors:
Curran Kalha,
Sebastian Bichelmaier,
Nathalie K. Fernando,
Judith. V. Berens,
Pardeep K. Thakur,
Tien-Lin Lee,
Julio. J. Gutiérrez-Moreno,
Stephan Mohr,
Laura E. Ratcliff,
Michael Reisinger,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high temperature events or its behaviour when exposed to air. Here, a combined soft and hard X-ray…
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The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high temperature events or its behaviour when exposed to air. Here, a combined soft and hard X-ray photoelectron spectroscopy (XPS) characterisation approach is used to study the influence of post-deposition annealing and titanium concentration on the oxidation behaviour of a 300~nm-thick TiW film. The combination of both XPS techniques allows for the assessment of the chemical state and elemental composition across the surface and bulk of the TiW layer. The findings show that in response to high-temperature annealing, titanium segregates out of the mixed metal system and upwardly migrates, accumulating at the TiW/air interface. Titanium shows remarkably rapid diffusion under relatively short annealing timescales and the extent of titanium surface enrichment is increased through longer annealing periods or by increasing the precursor titanium concentration. Surface titanium enrichment enhances the extent of oxidation both at the surface and in the bulk of the alloy due to the strong gettering ability of titanium. Quantification of the soft X-ray photoelectron spectra highlights the formation of three tungsten oxidation environments, attributed to WO$_2$, WO$_3$ and a WO$_3$ oxide coordinated with a titanium environment. This combinatorial characterisation approach provides valuable insights into the thermal and oxidation stability of TiW alloys from two depth perspectives, aiding the development of future device technologies.
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Submitted 19 February, 2021;
originally announced February 2021.
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Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$
Authors:
Jack E. N. Swallow,
Christian Vorwerk,
Piero Mazzolini,
Patrick Vogt,
Oliver Bierwagen,
Alexander Karg,
Martin Eickhoff,
Jörg Schörmann,
Markus R. Wagner,
Joseph W. Roberts,
Paul R. Chalker,
Matthew J. Smiles,
Philip A. E. Murgatroyd,
Sara A. Razek,
Zachary W. Lebens-Higgins,
Louis F. J. Piper,
Leanne A. H. Jones,
Pardeep Kumar Thakur,
Tien-Lin Lee,
Joel B. Varley,
Jürgen Furthmüller,
Claudia Draxl,
Tim D. Veal,
Anna Regoutz
Abstract:
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ra…
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The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga$_2$O$_3$ polymorphs as materials at the heart of future electronic device generations.
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Submitted 22 September, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy
Authors:
Judith Berens,
Sebastian Bichelmaier,
Nathalie K. Fernando,
Pardeep K. Thakur,
Tien-Lin Lee,
Manfred Mascheck,
Tomas Wiell,
Susanna K. Eriksson,
J. Matthias Kahk,
Johannes Lischner,
Manesh V. Mistry,
Thomas Aichinger,
Gregor Pobegen,
Anna Regoutz
Abstract:
SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC a…
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SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO$_2$. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard X-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO$_2$ and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.
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Submitted 21 April, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Non-trivial topological valence bands of common diamond and zinc-blende semiconductors
Authors:
Tomáš Rauch,
Victor A. Rogalev,
Maximilian Bauernfeind,
Julian Maklar,
Felix Reis,
Florian Adler,
Simon Moser,
Johannes Weis,
Tien-Lin Lee,
Pardeep K. Thakur,
Jörg Schäfer,
Ralph Claessen,
Jürgen Henk,
Ingrid Mertig
Abstract:
The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the F…
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The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the Fermi energy. Our parity analysis shows that the spin-orbit split-off band near the valence band maximum exhibits a strong topologically non-trivial behavior characterized by the $\mathcal{Z}_2$ invariants $(1;000)$. The non-trivial character emerges instantaneously with non-zero spin-orbit coupling, in contrast to the conventional topological phase transition mechanism. \textit{Ab initio}-based tight-binding calculations resolve topological surface states in the occupied electronic structure of InSb and GaAs, further confirmed experimentally by soft X-ray angle-resolved photoemission from both materials. Our findings are valid for all other materials whose valence bands are adiabatically linked to those of InSb, i.e., many diamond and zinc-blende semiconductors, as well as other related materials, such as half-Heusler compounds.
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Submitted 10 April, 2019;
originally announced April 2019.
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Probing spin correlations using angle resolved photoemission in a coupled metallic/Mott insulator system
Authors:
V. Sunko,
F. Mazzola,
S. Kitamura,
S. Khim,
P. Kushwaha,
O. J. Clark,
M. Watson,
I. Markovic,
D. Biswas,
L. Pourovskii,
T. K. Kim,
T. -L. Lee,
P. K. Thakur,
H. Rosner,
A. Georges,
R. Moessner,
T. Oka,
A. P. Mackenzie,
P. D. C. King
Abstract:
A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of possibilities for the motion of electrons in a solid. In the magnetic oxide metal PdCrO$_{2}$, these two coexist as alternating layers. Using angle resolved photoemission, we surprisingly find sharp band-like features in the one-electron removal spectral function of the correlated subsystem. We show that…
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A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of possibilities for the motion of electrons in a solid. In the magnetic oxide metal PdCrO$_{2}$, these two coexist as alternating layers. Using angle resolved photoemission, we surprisingly find sharp band-like features in the one-electron removal spectral function of the correlated subsystem. We show that these arise because a hole created in the Mott layer moves to and propagates in the metallic layer while retaining memory of the Mott layer's magnetism. This picture is quantitatively supported by a strong coupling analysis capturing the physics of PdCrO$_{2}$ in terms of a Kondo lattice Hamiltonian. Our findings open new routes to use the non-magnetic probe of photoemission to gain insights into the spin-susceptibility of correlated electron systems.
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Submitted 20 February, 2020; v1 submitted 24 September, 2018;
originally announced September 2018.
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Electron delocalization and multifractal scaling in electrified random chains
Authors:
Parthapratim Biswas,
Prabhat K Thakur
Abstract:
Electron localization property of a random chain changing under the influence of a constant electric field has been studied. We have adopted the multifractal scaling formalism to explore the possible localization behavior in the system. We observe that the possible localization behavior with the increase of electric field is not systematic and shows strong instabilities associated with the local…
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Electron localization property of a random chain changing under the influence of a constant electric field has been studied. We have adopted the multifractal scaling formalism to explore the possible localization behavior in the system. We observe that the possible localization behavior with the increase of electric field is not systematic and shows strong instabilities associated with the local probability variation over the length of the chain. The multifractal scaling study captures the localization aspects along with strong instability when the electric field is changed by infinitesimal steps for a reasonably large system size.
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Submitted 31 August, 1999;
originally announced August 1999.
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Multifractal scaling of electronic transmission resonances in perfect and imperfect Fibonacci $δ$-function potentials
Authors:
Prabhat K Thakur,
Parthapratim Biswas
Abstract:
We present here a detailed multifractal scaling study for the electronic transmission resonances with the system size for an infinitely large one dimensional perfect and imperfect quasiperiodic system represented by a sequence of $δ$-function potentials. The electronic transmission resonances in the energy minibands manifest more and more fragmented nature of the transmittance with the change of…
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We present here a detailed multifractal scaling study for the electronic transmission resonances with the system size for an infinitely large one dimensional perfect and imperfect quasiperiodic system represented by a sequence of $δ$-function potentials. The electronic transmission resonances in the energy minibands manifest more and more fragmented nature of the transmittance with the change of system sizes. We claim that when a small perturbation is randomly present at a few number of sites, the nature of electronic states will change and this can be understood by studying the electronic transmittance with the change of system size. We report the different critical states manifested in the size variation of the transmittance corresponding to the resonant energies for both perfect and imperfect cases through multifractal scaling study for few of these resonances.
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Submitted 25 November, 1998;
originally announced November 1998.
