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Level attraction from interference in two-tone driving
Authors:
Alan Gardin,
Guillaume Bourcin,
Christian Person,
Christophe Fumeaux,
Romain Lebrun,
Isabella Boventer,
Giuseppe C. Tettamanzi,
Vincent Castel
Abstract:
Coherent and dissipative couplings, respectively characterised by energy level repulsion and attraction, each have different applications for quantum information processing. Thus, a system in which both coherent and dissipative couplings are tunable on-demand and in-situ is tantalising. A first step towards this goal is the two-tone driving of two bosonic modes, whose experimental signature was sh…
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Coherent and dissipative couplings, respectively characterised by energy level repulsion and attraction, each have different applications for quantum information processing. Thus, a system in which both coherent and dissipative couplings are tunable on-demand and in-situ is tantalising. A first step towards this goal is the two-tone driving of two bosonic modes, whose experimental signature was shown to exhibit controllable level repulsion and attraction by changing the phase and amplitude of one drive. However, whether the underlying physics is that of coherent and dissipative couplings has not been clarified, and cannot be concluded solely from the measured resonances (or anti-resonances) of the system. Here, we show how the physics at play can be analysed theoretically. Combining this theory with realistic finite-element simulations, we deduce that the observation of level attraction originates from interferences due to the measurement setup, and not dissipative coupling. Beyond the clarification of a novel origin for level attraction attributed to interference, our work demonstrate how effective Hamiltonians can be derived to appropriately describe the physics.
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Submitted 25 April, 2024;
originally announced April 2024.
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The role of Rashba spin-orbit induced spin textures in the anomalous Josephson effect
Authors:
Ross D. Monaghan,
Giuseppe C. Tettamanzi
Abstract:
This work reports the theoretical investigation into the mechanism underpinning the anomalous Josephson effect. The prototypical system we study is a ballistic two-dimensional junction containing a two-dimensional Rashba spin-orbit interaction. In this paper we demonstrate how this two-dimensional Rashba interaction mixes the spins of adjacent transverse subbands which leads to significant spin-as…
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This work reports the theoretical investigation into the mechanism underpinning the anomalous Josephson effect. The prototypical system we study is a ballistic two-dimensional junction containing a two-dimensional Rashba spin-orbit interaction. In this paper we demonstrate how this two-dimensional Rashba interaction mixes the spins of adjacent transverse subbands which leads to significant spin-asymmetry within the junction. Under an external magnetic field, applied perpendicular to both the axis of transport and the normal vector of the junction, the sinusoidal Josephson current can then experience an anomalous phase shift. The role of this spin mixing in the limit of a single sub-band is initially explored by deriving an analytical expression for the resulting anomalous phase shift. The analysis is then extended to systems with multiple occupied sub-bands; in this later section, starting from a microscopic model, we derive an analytic formula for the resulting anomalous phase shift indicating it is linear in both magnetic field and spin-orbit strength. We then verify and validate all findings by comparing them with numerical results evaluated by a tight-binding model.
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Submitted 7 March, 2024;
originally announced March 2024.
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Engineering synthetic gauge fields through the coupling phases in cavity magnonics
Authors:
Alan Gardin,
Guillaume Bourcin,
Jeremy Bourhill,
Vincent Vlaminck,
Christian Person,
Christophe Fumeaux,
Giuseppe C. Tettamanzi,
Vincent Castel
Abstract:
Cavity magnonics, which studies the interaction of light with magnetic systems in a cavity, is a promising platform for quantum transducers and quantum memories. At microwave frequencies, the coupling between a cavity photon and a magnon, the quasi-particle of a spin wave excitation, is a consequence of the Zeeman interaction between the cavity's magnetic field and the magnet's macroscopic spin. F…
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Cavity magnonics, which studies the interaction of light with magnetic systems in a cavity, is a promising platform for quantum transducers and quantum memories. At microwave frequencies, the coupling between a cavity photon and a magnon, the quasi-particle of a spin wave excitation, is a consequence of the Zeeman interaction between the cavity's magnetic field and the magnet's macroscopic spin. For each photon/magnon interaction, a coupling phase factor exists, but is often neglected in simple systems. However, in "loop-coupled" systems, where there are at least as many couplings as modes, the coupling phases become relevant for the physics and lead to synthetic gauge fields. We present experimental evidence of the existence of such coupling phases by considering two spheres made of Yttrium-Iron-Garnet and two different re-entrant cavities. We predict numerically the values of the coupling phases, and we find good agreement between theory and the experimental data. These results show that in cavity magnonics, one can engineer synthetic gauge fields, which can be useful for cavity-mediated coupling and engineering dark mode physics.
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Submitted 23 April, 2024; v1 submitted 8 December, 2023;
originally announced December 2023.
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Circuit-theoretic phenomenological model of an electrostatic gate-controlled bi-SQUID
Authors:
Thomas X. Kong,
Jace Cruddas,
Jonathan Marenkovic,
Wesley Tang,
Giorgio De Simoni,
Francesco Giazotto,
Giuseppe C. Tettamanzi
Abstract:
A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is the novel ability to capture the resultant behaviour of the device when a strong electric field is applied to its Josephson junctions by utilising gate electrode…
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A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is the novel ability to capture the resultant behaviour of the device when a strong electric field is applied to its Josephson junctions by utilising gate electrodes. The model is used to simulate an all-metallic SNS (Al-Cu-Al) bi-SQUID, where good agreement is observed between the simulated results and the experimental data. The results discussed in this work suggest that the primary consequences of the superconducting field effect induced by the gating of the Josephson junctions are accounted for in our minimal model; namely, the suppression of the junctions super-current. Although based on a simplified semi-empirical model, our results may guide the search for a microscopic origin of this effect by providing a means to model the voltage response of gated SQUIDs. Also, the possible applications of this effect regarding the operation of SQUIDs as ultra-high precision sensors, where the performance of such devices can be improved via careful tuning of the applied gate voltages, are discussed at the end of the paper.
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Submitted 13 May, 2024; v1 submitted 3 September, 2023;
originally announced September 2023.
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Manifestation of the coupling phase in microwave cavity magnonics
Authors:
Alan Gardin,
Jeremy Bourhill,
Vincent Vlaminck,
Christian Person,
Christophe Fumeaux,
Vincent Castel,
Giuseppe C. Tettamanzi
Abstract:
The interaction between microwave photons and magnons is well understood and originates from the Zeeman coupling between spins and a magnetic field. Interestingly, the magnon/photon interaction is accompanied by a phase factor which can usually be neglected. However, under the rotating wave approximation, if two magnon modes simultaneously couple with two cavity resonances, this phase cannot be ig…
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The interaction between microwave photons and magnons is well understood and originates from the Zeeman coupling between spins and a magnetic field. Interestingly, the magnon/photon interaction is accompanied by a phase factor which can usually be neglected. However, under the rotating wave approximation, if two magnon modes simultaneously couple with two cavity resonances, this phase cannot be ignored as it changes the physics of the system. We consider two such systems, each differing by the sign of one of the magnon/photon coupling strengths. This simple difference, originating from the various coupling phases in the system, is shown to preserve, or destroy, two potential applications of hybrid photon/magnon systems, namely dark mode memories and cavity-mediated coupling. The observable consequences of the coupling phase in this system is akin to the manifestation of a discrete Pancharatnam-Berry phase, which may be useful for quantum information processing.
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Submitted 10 December, 2022;
originally announced December 2022.
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Ultra-Highly Linear Magnetic Flux-to-Voltage response in Proximity-based Mesoscopic bi-SQUIDs
Authors:
Giorgio De Simoni,
Lorenzo Cassola,
Nadia Ligato,
Giuseppe C. Tettamanzi,
Francesco Giazotto
Abstract:
Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response as a function of the magnetic flux. These devices are very important for the quantum sensing and for signal processing of signals oscillating at the radio-frequencies range of the electromagnetic spectrum. Here, we repor…
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Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response as a function of the magnetic flux. These devices are very important for the quantum sensing and for signal processing of signals oscillating at the radio-frequencies range of the electromagnetic spectrum. Here, we report an Al double-loop bi-SQUIDs based on proximitized mesoscopic Cu Josephson junctions. Such a scheme provides an alternative fabrication approach to conventional tunnel junction-based interferometers, where the junction characteristics and, consequently, the magnetic flux-to-voltage and magnetic flux-to-critical current device response can be largely and easily tailored by the geometry of the metallic weak-links. We discuss the performance of such sensors by showing a full characterization of the device switching current and voltage drop \textit{vs.} magnetic flux for temperatures of operation ranging from 30 mK to $\sim 1$ K. The figure of merit of the transfer function and of the total harmonic distortion are also discussed. The latter provides an estimate of the linearity of the flux-to-voltage device response, which obtained values as large as 45 dB. Such a result let us foresee a performance already on pair with that achieved in conventional tunnel junction-based bi-SQUIDs arrays composed of hundreds of interferometers.
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Submitted 17 December, 2021;
originally announced December 2021.
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Non-adiabatic quantum control of valley states in silicon
Authors:
Alan Gardin,
Ross D. Monaghan,
Tyler Whittaker,
Rajib Rahman,
Giuseppe C. Tettamanzi
Abstract:
Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable and uncontrollable behaviour. However, when combined with the valley degree of freedom inherent to silicon, these unfavourable effects may be leveraged for quantum information processing schemes. By using an explicit time…
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Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable and uncontrollable behaviour. However, when combined with the valley degree of freedom inherent to silicon, these unfavourable effects may be leveraged for quantum information processing schemes. By using an explicit time evolution of the Schrodinger equation, we study numerically non-adiabatic transitions between the two lowest valley states of an electron in a quantum dot formed in a SiGe/Si heterostructure. The presence of a single atomic layer step at the top SiGe/Si interface opens an anti-crossing in the electronic spectrum as the centre of the quantum dot is varied. We show that an electric field applied perpendicularly to the interface allows tuning of the anti-crossing energy gap. As a result, by moving the electron through this anti-crossing, and by electrically varying the energy gap, it is possible to electrically control the probabilities of the two lowest valley states.
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Submitted 22 November, 2021; v1 submitted 28 May, 2021;
originally announced May 2021.
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Gigahertz Single-Electron Pum** Mediated by Parasitic States
Authors:
A. Rossi,
J. Klochan,
J. Timoshenko,
F. E. Hudson,
M. Möttönen,
S. Rogge,
A. S. Dzurak,
V. Kashcheyevs,
G. C. Tettamanzi
Abstract:
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approxima…
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In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency dependent features in the pumped current.
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Submitted 27 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
Authors:
Giuseppe Carlo Tettamanzi,
Samuel James Hile,
Matthew Gregory House,
Martin Fuechsle,
Sven Rogge,
Michelle Y. Simmons
Abstract:
The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $\approx$ 13 GHz to heavily phosphorous doped…
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The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $\approx$ 13 GHz to heavily phosphorous doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy $\approx$ 9 meV consistent with the first excited state of a single $P$ donor in silicon. The relaxation rate of this first excited state to ground is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under rf excitations.
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Submitted 27 February, 2017;
originally announced February 2017.
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Dynamics of a single-atom electron pump
Authors:
J. van der Heijden,
G. C. Tettamanzi,
S. Rogge
Abstract:
Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable orbital level spacings, enabling robust charge capturing processes. In these single-atom pumps, the confinement potential is hardly affected by the periodic driving o…
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Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable orbital level spacings, enabling robust charge capturing processes. In these single-atom pumps, the confinement potential is hardly affected by the periodic driving of the system. This is in contrast to the often used gate-defined quantum dot pumps, for which a strongly time-dependent potential leads to significantly different charge pum** processes. Here we describe the behaviour and the performance of an atomic, single parameter, electron pump. This is done by considering the loading, isolating and unloading of one electron at the time, on a phosphorous atom embedded in a silicon double gate transistor. The most important feature of the atom pump is its very isolated ground state, which can be populated through the fast loading of much higher lying excited states and a subsequent fast relaxation proces. This leads to a substantial increase in pum** accuracy, and is opposed to the adverse role of excited states as observed for quantum dot pumps due to non-adiabatic excitations. The pum** performances are investigated as a function of dopant position, revealing a pum** behaviour robust against the expected variability in atomic position.
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Submitted 29 July, 2016;
originally announced July 2016.
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A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
Authors:
Wendy E. Purches,
Alessandro Rossi,
Ruichen Zhao,
Sergey Kafanov,
Timothy L. Duty,
Andrew S. Dzurak,
Sven Rogge,
Giuseppe C. Tettamanzi
Abstract:
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and cha…
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Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
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Submitted 9 August, 2015; v1 submitted 3 June, 2015;
originally announced June 2015.
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An accurate single-electron pump based on a highly tunable silicon quantum dot
Authors:
A. Rossi,
T. Tanttu,
K. Y. Tan,
I. Iisakka,
R. Zhao,
K. W. Chan,
G. C. Tettamanzi,
S. Rogge,
A. S. Dzurak,
M. Möttönen
Abstract:
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confin…
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Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of non-adiabatic transitions that reduce pum** accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.
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Submitted 5 June, 2014;
originally announced June 2014.
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Charge Pum** Through a Single Donor Atom
Authors:
G. C. Tettamanzi,
R. Wacquez,
S. Rogge
Abstract:
Presented in this paper is a proof-of-concept for a new approach to single electron pum** based on a Single Atom Transistor (SAT). By charge pum** electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.
Presented in this paper is a proof-of-concept for a new approach to single electron pum** based on a Single Atom Transistor (SAT). By charge pum** electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.
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Submitted 8 June, 2014; v1 submitted 14 January, 2014;
originally announced January 2014.
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New tools for the direct characterisation of FinFETs
Authors:
G. C. Tettamanzi,
A. Paul,
S. Lee,
G. Klimeck,
S. Rogge
Abstract:
This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs). By means of simple current and differential conductance measurements, taken at different temperatures and different gate voltages ($V_G$'s), it is possible to…
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This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs). By means of simple current and differential conductance measurements, taken at different temperatures and different gate voltages ($V_G$'s), it is possible to extrapolate the evolution of important parameters such as the spatial region of transport and the height of thermionic barrier at the centre of the channel. Furthermore, if the measurements are used in conjunction with simulated data, it becomes possible to also extract the interface trap density of these objects. These are important results, also because these parameters are extracted directly on state-of-the-art devices and not in specially-designed test structures. The possible characterisation of the different regimes of transport that can arise in these ultra-scaled devices having a doped or an undoped channel are also discussed. Examples of these regimes are, full body inversion and weak body inversion. Specific cases demonstrating the strength of the thermionic tool are discussed in sections \ref{sec:II}, \ref{sec:III} and \ref{sec:IV}. This text has been designed as a comprehensive overview of 4 related publications (see Ref. [2-5]) and has been submitted as a book chapter in Ref. [6]).
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Submitted 23 November, 2011;
originally announced November 2011.
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Dopant metrology in advanced FinFETs
Authors:
G. P. Lansbergen,
R. Rahman,
G. C. Tettamanzi,
J. Verduijn,
L. C. L. Hollenberg,
G. Klimeck,
S. Rogge
Abstract:
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth belo…
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Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.
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Submitted 17 November, 2011;
originally announced November 2011.
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Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
Authors:
R. Rahman,
G. P. Lansbergen,
J. Verduijn,
G. C. Tettamanzi,
S. H. Park,
N. Collaert,
S. Biesemans,
G. Klimeck,
L. C. L. Hollenberg,
S. Rogge
Abstract:
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, a…
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We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, applied fields, and interfaces. An applied field pulls the loosely bound D- electron towards the interface and reduces the charging energy significantly below the bulk values. This enables formation of bound excited D-states in these gated donors, in contrast to bulk donors. A detailed quantitative comparison of the charging energies with transport spectroscopy measurements with multiple samples of arsenic donors in ultra-scaled FinFETs validates the model results and provides physical insights. We also report measured D-data showing for the first time the presence of bound D-excited states under applied fields.
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Submitted 13 July, 2011;
originally announced July 2011.
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Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
Authors:
G. C. Tettamanzi,
J. Verduijn,
G. P. Lansbergen,
M. Blaauboer,
M. J. Calderón,
R. Aguado,
S. Rogge
Abstract:
Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as orbital Kondo ground state. We experimentally as well than theoretically show how we can tune a symmetry transition from a SU(4) ground state, a many bo…
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Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as orbital Kondo ground state. We experimentally as well than theoretically show how we can tune a symmetry transition from a SU(4) ground state, a many body state that forms a spin as well as orbital singlet by virtual exchange with the leads, to a pure SU(2) orbital ground state, as a function of magnetic field. The small size and the s-like orbital symmetry of the ground state of the dopant, make it a model system in which the magnetic field only couples to the spin degree of freedom and allows for observation of this SU(4) to SU(2) transition.
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Submitted 13 December, 2011; v1 submitted 15 February, 2011;
originally announced February 2011.
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Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Authors:
Abhijeet Paul,
Giuseppe C. Tettamanzi,
Sunhee Lee,
Saumitra Mehrotra,
Nadine Colleart,
Serge Biesemans,
Sven Rogge,
Gerhard Klimeck
Abstract:
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be used to understand the evolution of source-to-channel barrier height (Eb) and of active channel area (S) with gate bias (Vgs). The quantitative difference between…
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Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be used to understand the evolution of source-to-channel barrier height (Eb) and of active channel area (S) with gate bias (Vgs). The quantitative difference between experimental and theoretical values that we observe can be attributed to the interface traps present in these FinFETs. Therefore, based on the difference between measured and calculated values of (i) S and (ii) |dEb/dVgs| (channel to gate coupling), two new methods of interface trap density (Dit) metrology are outlined. These two methods are shown to be very consistent and reliable, thereby opening new ways of analyzing in situ state-of-the-art multi-gate FETs down to the few nm width limit. Furthermore, theoretical investigation of the spatial current density reveal volume inversion in thinner FinFETs near the threshold voltage.
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Submitted 16 February, 2011; v1 submitted 1 February, 2011;
originally announced February 2011.
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Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Authors:
Giuseppe Carlo Tettamanzi,
Abhijeet Paul,
Sunhee Lee,
Saumitra R. Mehrotra,
Nadine Collaert,
Serge Biesemans,
Gerhard Klimeck,
Sven Rogge
Abstract:
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of me…
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The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of methods that allow direct estimation of Dit in state-of-the-art FinFETs, addressing a critical industry need.
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Submitted 11 November, 2010;
originally announced November 2010.
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Lifetime enhanced transport in silicon due to spin and valley blockade
Authors:
G. P. Lansbergen,
R. Rahman,
J. Verduijn,
G. C. Tettamanzi,
N. Collaert,
S. Biesemans,
G. Klimeck,
L. C. L. Hollenberg,
S. Rogge
Abstract:
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) config…
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We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.
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Submitted 19 July, 2011; v1 submitted 8 August, 2010;
originally announced August 2010.
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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
Authors:
B. C. Johnson,
G. C. Tettamanzi,
A. D. C. Alves,
S. Thompson,
C. Yang,
J. Verduijn,
J. A. Mol,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. Rogge,
D. N. Jamieson
Abstract:
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** proc…
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We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic do** is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stop** processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stop** is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stop** is dominant leading to discrete decreases in drain current.
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Submitted 29 July, 2010;
originally announced July 2010.
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Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
Authors:
M. J. Calderon,
J. Verduijn,
G. P. Lansbergen,
G. C. Tettamanzi,
S. Rogge,
Belita Koiller
Abstract:
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small chargi…
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Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.
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Submitted 7 May, 2010;
originally announced May 2010.
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Thermionic Emission as a tool to study transport in undoped nFinFETs
Authors:
Giuseppe C. Tettamanzi,
Abhijeet Paul,
Gabriel P. Lansbergen,
Jan Verduijn,
Sunhee Lee,
Nadine Collaert,
Serge Biesemans,
Gerhard Klimeck,
Sven Rogge
Abstract:
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming…
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Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of devices characteristics.
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Submitted 29 March, 2010;
originally announced March 2010.
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Flux noise in ion-implanted nanoSQUIDs
Authors:
Giuseppe C. Tettamanzi,
Christopher I. Pakes,
Simon K. H. Lam,
Steven Prawer
Abstract:
Focused ion beam (FIB) technology has been used to fabricate miniature Nb DC SQUIDs which incorporate resistively-shunted microbridge junctions and a central loop with a hole diameter ranging from 1058 nm to 50 nm. The smallest device, with a 50 nm hole diameter, has a white flux noise level of 2.6 microphy_{0}/Hz^{0.5} at 10^{4} Hz. The scaling of the flux noise properties and focusing effect of…
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Focused ion beam (FIB) technology has been used to fabricate miniature Nb DC SQUIDs which incorporate resistively-shunted microbridge junctions and a central loop with a hole diameter ranging from 1058 nm to 50 nm. The smallest device, with a 50 nm hole diameter, has a white flux noise level of 2.6 microphy_{0}/Hz^{0.5} at 10^{4} Hz. The scaling of the flux noise properties and focusing effect of the SQUID with the hole size were examined. The observed low-frequency flux noise of different devices were compared with the contribution due to the spin fluctuation of defects during FIB processing and the thermally activated flux hop** in the SQUID washer.
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Submitted 29 March, 2010;
originally announced March 2010.
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Reply on the comment on the paper "Superconducting transition in Nb nanowires fabricated using focused ion beam"
Authors:
G. C. Tettamanzi,
A. Potenza,
S. Rubanov,
C. H. Marrows,
S. Prawer
Abstract:
In this communication we present our response to the recent comment of A. Engel regarding our paper on FIB- fabricated Nb nanowires (see Vol. 20 (2009) Pag. 465302). After further analysis and additional experimental evidence, we conclude that our interpretation of the experimental results in light of QPS theory is still valid when compared with the alternative proximity-based model as proposed by…
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In this communication we present our response to the recent comment of A. Engel regarding our paper on FIB- fabricated Nb nanowires (see Vol. 20 (2009) Pag. 465302). After further analysis and additional experimental evidence, we conclude that our interpretation of the experimental results in light of QPS theory is still valid when compared with the alternative proximity-based model as proposed by A. Engel.
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Submitted 29 March, 2010;
originally announced March 2010.
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Superconducting transition in Nb nanowires fabricated using focused ion beam
Authors:
G. C. Tettamanzi,
C. I. Pakes,
A. Potenza,
S. Rubanov,
C. H. Marrows,
S. Prawer
Abstract:
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to di…
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Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below Tc. This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.
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Submitted 29 March, 2010;
originally announced March 2010.
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Coherent transport through a double donor system in silicon
Authors:
J. Verduijn,
G. C. Tettamanzi,
G. P. Lansbergen,
N. Collaert,
S. Biesemans,
S. Rogge
Abstract:
Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be…
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Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic field, in full analogy to the Aharonov-Bohm effect.
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Submitted 11 December, 2009;
originally announced December 2009.
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Tunable Kondo effect in a single donor atom
Authors:
G. P. Lansbergen,
G. C. Tettamanzi,
J. Verduijn,
N. Collaert,
S. Biesemans,
M. Blaauboer,
S. Rogge
Abstract:
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the Silicon valleys, an exotic and hither…
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The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the Silicon valleys, an exotic and hitherto unobserved valley Kondo effect appears. Together with the regular spin Kondo, the tunable valley Kondo effect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2)- to an SU(4) -configuration.
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Submitted 30 September, 2009;
originally announced September 2009.
