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Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1-x topological materials with exceedingly high Curie temperature
Authors:
Candice R. Forrester,
Christophe Testelin,
Kaushini Wickramasinghe,
Ido Levy,
Dominique Demaille,
David Hrabovski,
Xiaxin Ding,
Lia Krusin-Elbaum,
Gustavo E. Lopez,
Maria C. Tamargo
Abstract:
Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and opt…
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Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and optimize TC, particularly through defect engineering of these structures. Most recently we showed evidence of TC values up to 80K for (MnSb2Te4)x(Sb2Te3)1-x, where x is greater than or equal to 0.7 and less than or equal to 0.85, by controlling the compositions and Mn content in these structures. Here we show further enhancement of the TC, as high as 100K, by maintaining high Mn content and reducing the growth rate from 0.9 nm/min to 0.5 nm/min. Derivative curves reveal the presence of two TC components contributing to the overall value and propose TC1 and TC2 have distinct origins: excess Mn in SLs and Mn in Sb2-yMnyTe3QLs alloys, respectively. In pursuit of elucidating the mechanisms promoting higher Curie temperature values in this system, we show evidence of structural disorder where Mn is occupying not only Sb sites but also Te sites, providing evidence of significant excess Mn and a new crystal structure:(Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x. Our work shows progress in understanding how to control magnetic defects to enhance desired magnetic properties and the mechanism promoting these high TC in magnetic topological materials such as (Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x.
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Submitted 17 November, 2023;
originally announced November 2023.
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Compositional Control and Optimization of Molecular Beam Epitaxial Growth of (Sb2Te3)x(MnSb2Te4)y Magnetic Topological Insulators
Authors:
Ido Levy,
Candice Forrester,
Haiming Deng,
Manuel Goldan,
Martha R. McCartney,
David J. Smith,
Christophe Testelin,
Lia Krusin-Elbaum,
Maria C. Tamargo
Abstract:
Magnetic topological insulators such as MnBi2Te4 and MnSb2Te4 are promising hosts of novel physical phenomena such as quantum anomalous Hall effect and intrinsic axion insulator state, both potentially important for the implementation in topological spintronics and error-free quantum computing. In the bulk, the materials are antiferromagnetic but appropriate stacking with non-magnetic layers or ex…
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Magnetic topological insulators such as MnBi2Te4 and MnSb2Te4 are promising hosts of novel physical phenomena such as quantum anomalous Hall effect and intrinsic axion insulator state, both potentially important for the implementation in topological spintronics and error-free quantum computing. In the bulk, the materials are antiferromagnetic but appropriate stacking with non-magnetic layers or excess Mn in the crystal lattice can induce a net ferromagnetic alignment. In this work we report the growth of (Sb2Te3)x(MnSb2Te4)y layers with varying Mn content by molecular beam epitaxy. The Mn flux fraction provided during growth controls the percent of MnSb2Te4 that is formed in the resulting layers by a self-assembly process. Highly crystalline layers with compositions varying between Sb2Te3 (y=0) and MnSb2Te4 (x=0) were obtained. The results show that Mn incorporates as a structural component to form MnSb2Te4, and as an impurity element both in Sb2Te3 and in MnSb2Te4. Two modifications of the growth conditions were implemented to enhance the incorporation of Mn as a structural element to form MnSb2Te4. Annealing of a thin portion of the layer at the beginning of growth (pre-anneal step), and increasing the growth temperature, both result in a larger percent of MnSb2Te4 for similar Mn flux fractions during growth. Samples having at least a few percent of MnSb2Te4 layers exhibit ferromagnetic behavior likely due to the excess Mn in the system which stabilizes on Sb sites as MnSb antisite defects.
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Submitted 12 December, 2021;
originally announced December 2021.
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Designer topological insulator with enhanced gap and suppressed bulk conduction in Bi2Se3/Sb2Te3 ultra-short period superlattices
Authors:
Ido Levy,
Cody Youmans,
Thor Garcia,
Haiming Deng,
Steven Alsheimer,
Christophe Testelin,
Lia Krusin-Elbaum,
Pouyan Ghaemi,
Maria Tamargo
Abstract:
A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed reduction of bulk background do** by more than one order of magnitude, from 1.2x1020 cm-3 to 8.5x1018 cm-3 as the period of Bi2Se3/Sb2Te3 SLs is decreased from 12 nm…
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A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed reduction of bulk background do** by more than one order of magnitude, from 1.2x1020 cm-3 to 8.5x1018 cm-3 as the period of Bi2Se3/Sb2Te3 SLs is decreased from 12 nm to 5 nm, respectively. Tight binding calculations show that in the very thin period regime, a significant SGE can be achieved by the appropriate choice of materials. The ultrathin SL of alternating Bi2Se3 and Sb2Te3 layers behaves as a new designer material with a bulk bandgap as much as 60% larger than the bandgap of the constituent layer with the largest bandgap, while retaining topological surface features. Analysis of the weak antilocalization (WAL) cusp evident in the low temperature magneto-conductance of a very thin period SL sample grown confirms that the top and bottom surfaces of the SL structure behave as Dirac surface states. This approach represents a promising and yet to be explored platform for building truly insulating bulk TIs.
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Submitted 9 January, 2020;
originally announced January 2020.
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Giant Fine Structure Splitting of the Bright Exciton in a Bulk MAPbBr$_3$ Single Crystal
Authors:
Michal Baranowski,
Krzysztof Galkowski,
Alessandro Surrente,
Joanna M. Urban,
Łukasz Klopotowski,
Sebastian Mackowski,
Duncan K. Maude,
Rim Ben Aich,
Kais Boujdaria,
Maria Chamarro,
Christophe Testelin,
Pabitra Nayak,
Markus Dollmann,
Henry J. Snaith,
Robin J. Nicholas,
Paulina Plochocka
Abstract:
Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange interaction, most work has focused on nanostructures. Here, we report on the first observation of the bright exciton fine structure splitting in a bulk semiconductor crystal, where the impact of quantum confinement can be…
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Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange interaction, most work has focused on nanostructures. Here, we report on the first observation of the bright exciton fine structure splitting in a bulk semiconductor crystal, where the impact of quantum confinement can be specifically excluded, giving access to the intrinsic properties of the material. Detailed investigation of the exciton photoluminescence and reflection spectra of a bulk methylammonium lead tribromide single crystal reveals a zero magnetic field splitting as large as $\sim 200μ$eV. This result provides an important starting point for the discussion of the origin of the large bright exciton fine structure observed in perovskite nanocrystals.
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Submitted 13 September, 2019;
originally announced September 2019.
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Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)
Authors:
L. Thevenard,
E. Peronne,
C. Gourdon,
C. Testelin,
M. Cubukcu,
E. Charron,
S. Vincent,
A. Lemaitre,
B. Perrin
Abstract:
The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation i…
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The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation induced by the ps-ASP allowed us to model very accurately the resulting signal, and interpret it as the strain modulated reflectivity (differing for $σ_{\pm}$ probe polarizations), independently from dynamic magnetization effects.
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Submitted 21 July, 2010;
originally announced July 2010.
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Hole spin dephasing time associated to hyperfine interaction in quantum dots
Authors:
C. Testelin,
F. Bernardot,
B. Eble,
M. Chamarro
Abstract:
The spin interaction of a hole confined in a quantum dot with the surrounding nuclei is described in terms of an effective magnetic field. We show that, in contrast to the Fermi contact hyperfine interaction for conduction electrons, the dipole-dipole hyperfine interaction is anisotropic for a hole, for both pure or mixed hole states. We evaluate the coupling constants of the hole-nuclear intera…
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The spin interaction of a hole confined in a quantum dot with the surrounding nuclei is described in terms of an effective magnetic field. We show that, in contrast to the Fermi contact hyperfine interaction for conduction electrons, the dipole-dipole hyperfine interaction is anisotropic for a hole, for both pure or mixed hole states. We evaluate the coupling constants of the hole-nuclear interaction and demonstrate that they are only one order of magnitude smaller than the coupling constants of the electron-nuclear interaction. We also study, theoretically, the hole spin dephasing of an ensemble of quantum dots via the hyperfine interaction in the framework of frozen fluctuations of the nuclear field, in absence or in presence of an applied magnetic field. We also discuss experiments which could evidence the dipole-dipole hyperfine interaction and give information on hole mixing.
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Submitted 23 March, 2009;
originally announced March 2009.
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Hole - Nuclear Spin Interaction in Quantum Dots
Authors:
B. Eble,
C. Testelin,
P. Desfonds,
F. Bernardot,
A. Balocchi,
T. Amand,
A. Miard,
A. Lemaitre,
X. Marie,
M. Chamarro
Abstract:
We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine interaction between hole and nuclear spins. In the absence of external magnetic field, we find a characteristic hole spin dephasing time of 15 ns, in close a…
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We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine interaction between hole and nuclear spins. In the absence of external magnetic field, we find a characteristic hole spin dephasing time of 15 ns, in close agreement with our calculations based on dipole-dipole coupling between the hole and the quantum dot nuclei. Finally we demonstrate that a small external magnetic field, typically 10 mT instead of 200 mT for the case of electrons, quenches the hyperfine hole spin dephasing.
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Submitted 22 July, 2008; v1 submitted 7 July, 2008;
originally announced July 2008.
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Inversion of the spin polarization of localized electrons driven by dark excitons
Authors:
B. Eble,
C. Testelin,
F. Bernardot,
M. Chamarro,
G. Karczewski
Abstract:
The creation of free excitons by absorption of circularly polarized photons, and their subsequent fast capture by donors, is at the origin of the spin polarization of donor-bound electrons. The sign of the electronic spin polarization at low density of excitation is, as expected, fixed by the helicity of the exciting light; but at high density of excitation we show that the spin polarization is…
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The creation of free excitons by absorption of circularly polarized photons, and their subsequent fast capture by donors, is at the origin of the spin polarization of donor-bound electrons. The sign of the electronic spin polarization at low density of excitation is, as expected, fixed by the helicity of the exciting light; but at high density of excitation we show that the spin polarization is of the opposite sign. This striking inversion is explained, here, by the contribution of dark excitons to mechanisms of spin polarization of localized electrons.
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Submitted 9 January, 2008;
originally announced January 2008.
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Signature of the Overhauser field on the coherent spin dynamics of donor-bound electron in a single CdTe quantum well
Authors:
C. Testelin,
F. Bernardot,
G. Karczewski,
M. Chamarro
Abstract:
We have studied the coherent spin dynamics in an oblique magnetic field of electrons localized on donors and placed in the middle of a single CdTe quantum well, by using a time-resolved optical technique: the photo-induced Faraday rotation. We showed that this dynamics is affected by a weak Overhauser field created via the hyperfine interaction of optically spin-polarized donor-bound electrons w…
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We have studied the coherent spin dynamics in an oblique magnetic field of electrons localized on donors and placed in the middle of a single CdTe quantum well, by using a time-resolved optical technique: the photo-induced Faraday rotation. We showed that this dynamics is affected by a weak Overhauser field created via the hyperfine interaction of optically spin-polarized donor-bound electrons with the surrounding nuclear isotopes carrying non-zero spins. We have measured this nuclear field, which is on the order of a few mT and can reach a maximum experimental value of 9.4 mT. This value represents 13 % of the maximal nuclear polarization, and corresponds also to 13 % of maximal electronic polarization.
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Submitted 4 December, 2007;
originally announced December 2007.
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Anisotropic spin splitting of the electron ground state in InAs quantum dots
Authors:
E. Aubry,
C. Testelin,
F. Bernardot,
M. Chamarro,
A. Lemaitre
Abstract:
Photoinduced circular dichroism experiments in an oblique magnetic field allow measurements of Larmor precession frequencies, and so give a precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs quantum dots emitting at 1.32 eV. In good agreement with recent theoretical results, we measure g perp= 0.397 +_ 0.003 and g par = 0.18 +- 0.02.
Photoinduced circular dichroism experiments in an oblique magnetic field allow measurements of Larmor precession frequencies, and so give a precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs quantum dots emitting at 1.32 eV. In good agreement with recent theoretical results, we measure g perp= 0.397 +_ 0.003 and g par = 0.18 +- 0.02.
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Submitted 16 May, 2007;
originally announced May 2007.
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Enhancement of the electron spin memory by localization on donors in a quantum well
Authors:
J. Tribollet,
E. Aubry,
G. Karczewski,
B. Sermage,
F. Bernardot,
C. Testelin,
M. Chamarro
Abstract:
We present easily reproducible experimental conditions giving long electron spin relaxation and dephasing times at low temperature in a quantum well. The proposed system consists in an electron localized by a donor potential, and immerged in a quantum well in order to improve its localization with respect to donor in bulk. We have measured, by using photoinduced Faraday rotation technique, the s…
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We present easily reproducible experimental conditions giving long electron spin relaxation and dephasing times at low temperature in a quantum well. The proposed system consists in an electron localized by a donor potential, and immerged in a quantum well in order to improve its localization with respect to donor in bulk. We have measured, by using photoinduced Faraday rotation technique, the spin relaxation and dephasing times of electrons localized on donors placed in the middle of a 80A CdTe quantum well, and we have obtained 15ns and 18ns, respectively, which are almost two orders of magnitude longer than the free electron spin relaxation and dephasing times obtained previously in a similar CdTe quantum well (J. Tribollet et al. PRB 68, 235316 (2003)).
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Submitted 3 October, 2006;
originally announced October 2006.
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Many-body origin of the "trion line"
Authors:
M. Combescot,
J. Tribollet,
G. Karczewski,
F. Bernardot,
C. Testelin,
M. Chamarro
Abstract:
We show that the so-called "trion line" in the absorption spectrum of doped quantum wells, comes from a singular many-body object, intrinsically wide in energy: the photocreated virtual exciton dressed by Coulomb and Pauli interactions with the well carriers. This understanding is supported by the spectra of circular dichroism obtained with a spin-polarized Fermi sea: the sharp edge on the low-e…
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We show that the so-called "trion line" in the absorption spectrum of doped quantum wells, comes from a singular many-body object, intrinsically wide in energy: the photocreated virtual exciton dressed by Coulomb and Pauli interactions with the well carriers. This understanding is supported by the spectra of circular dichroism obtained with a spin-polarized Fermi sea: the sharp edge on the low-energy side and the significant tail at high energies are well explained by these many-body effects, not by bound 3-body trions.
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Submitted 15 September, 2004;
originally announced September 2004.
