Aluminum nitride integration on silicon nitride photonic circuits: a new hybrid approach towards on-chip nonlinear optics
Authors:
Giulio Terrasanta,
Timo Sommer,
Manuel Müller,
Matthias Althammer,
Rudolf Gross,
Menno Poot
Abstract:
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $χ^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are fabricated by reactive DC sputtering of c-axis oriented AlN on top of pre-patterned SiN. This new approach does not require any patterning of AlN and depends only…
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Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $χ^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are fabricated by reactive DC sputtering of c-axis oriented AlN on top of pre-patterned SiN. This new approach does not require any patterning of AlN and depends only on reliable SiN nanofabrication. This simplifies the nanofabrication process drastically. Optical characteristics, such as the quality factor, propagation losses and group index, are obtained. Our hybrid resonators can have a one order of magnitude increase in quality factor after the AlN integration, with propagation losses down to \SI{0.7}{dB/cm}. Using finite-element simulations, phase matching in these waveguides is explored.
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Submitted 6 October, 2021; v1 submitted 5 October, 2021;
originally announced October 2021.
Growth of Aluminum Nitride on a Silicon Nitride Substrate for Hybrid Photonic Circuits
Authors:
G. Terrasanta,
M. Müller,
T. Sommer,
S. Geprägs,
R. Gross,
M. Althammer,
M. Poot
Abstract:
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $χ^{(2)}$ allows single-photon generation. We have grown AlN thin films on silicon nitride via reactive DC magnetron sputtering. The thin films have been characterized using X-ray diffraction, optical re…
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Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $χ^{(2)}$ allows single-photon generation. We have grown AlN thin films on silicon nitride via reactive DC magnetron sputtering. The thin films have been characterized using X-ray diffraction, optical reflectometry, atomic force microscopy, and scanning electron microscopy. The crystalline properties of the thin films have been improved by optimizing the nitrogen to argon ratio and the magnetron DC power of the deposition process. X-ray diffraction measurements confirm the fabrication of high-quality c-axis oriented thin films with a full width at half maximum of the rocking curves of 3.9 deg. for 300-nm-thick films. Atomic force microscopy measurements reveal a root mean square surface roughness below 1 nm. The AlN deposition on SiN allows us to fabricate hybrid photonic circuits with a new approach that avoids the challenging patterning of AlN.
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Submitted 8 March, 2021;
originally announced March 2021.
