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All-Electrical Skyrmionic Bits in a Chiral Magnetic Tunnel Junction
Authors:
Shaohai Chen,
Pin Ho,
James Lourembam,
Alexander K. J. Toh,
Jifei Huang,
Xiaoye Chen,
Hang Khume Tan,
Sherry K. L. Yap,
Royston J. J. Lim,
Hui Ru Tan,
T. S. Suraj,
Yeow Teck Toh,
Idayu Lim,
**g Zhou,
Hong **g Chung,
Sze Ter Lim,
Anjan Soumyanarayanan
Abstract:
Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) host…
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Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multi-modal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal - 20-70% relative to uniform states - corresponds directly to skyrmion size. Further, the MTJ exploits complementary mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three nonvolatile electrical states. Crucially, it can write and delete skyrmions using current densities 1,000 times lower than state-of-the-art. These results provide a platform to incorporate readout and manipulation of skyrmionic bits across myriad device architectures, and a springboard to harness chiral spin textures for multi-bit memory and unconventional computing.
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Submitted 15 February, 2023;
originally announced February 2023.
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Emulation of Neuron and Synaptic Functions in Spin-Orbit Torque Domain Wall Devices
Authors:
Durgesh Kumar,
Ramu Maddu,
Hong **g Chung,
Hasibur Rahaman,
Tianli **,
Sabpreet Bhatti,
Sze Ter Lim,
Rachid Sbiaa,
S. N. Piramanayagam
Abstract:
Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental…
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Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental investigations on DW neurons and synapses. The present study demonstrates the energy-efficient operations of neurons and synapses by using novel reading and writing strategies. We have used a W/CoFeB-based energy-efficient SOT mechanism to drive the DWs at low current densities. We have used the concept of meander devices for achieving synaptic functions. By doing this, we have achieved 9 different resistive states in experiments. We have experimentally demonstrated the functional spike and step neurons. Additionally, we have engineered the anomalous Hall bars by incorporating several pairs, in comparison to conventional Hall crosses, to increase the sensitivity as well as signal-to-noise ratio (SNR). We performed micromagnetic simulations and transport measurements to demonstrate the above-mentioned functionalities.
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Submitted 15 December, 2022;
originally announced December 2022.
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Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy
Authors:
Atsushi Okada,
Shikun He,
Bo Gu,
Shun Kanai,
Anjan Soumyanarayanan,
Sze Ter Lim,
Michael Tran,
Michiyasu Mori,
Sadamichi Maekawa,
Fumihiro Matsukura,
Hideo Ohno,
Christos Panagopoulos
Abstract:
Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mecha…
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Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mechanism in thin films is especially important, because most spintronics devices are made from stacks of multilayers with nanometer thickness. The stacks are known to possess interfacial magnetic anisotropy, a central property for applications, whose influence on the dynamics remains unknown. Here, we investigate the impact of interfacial anisotropy by adopting CoFeB/MgO as a model system. Through systematic and complementary measurements of ferromagnetic resonance (FMR), on a series of thin films, we identify narrower FMR linewidths at higher temperatures. We explicitly rule out the temperature dependence of intrinsic dam** as a possible cause, and it is also not expected from existing extrinsic scattering mechanisms for ferromagnets. We ascribe this observation to motional narrowing, an old concept so far neglected in the analyses of FMR spectra. The effect is confirmed to originate from interfacial anisotropy, impacting the practical technology of spin-based nanodevices up to room temperature.
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Submitted 18 May, 2017;
originally announced May 2017.
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Influence of Ta insertions on the magnetic properties of MgO/CoFeB/MgO films probed by ferromagnetic resonance
Authors:
Maria Patricia Rouelli Sabino,
Sze Ter Lim,
Michael Tran
Abstract:
We show by vector network analyzer ferromagnetic resonance measurements that low Gilbert dam** α down to 0.006 can be achieved in perpendicularly magnetized MgO/CoFeB/MgO thin films with ultra-thin insertions of Ta in the CoFeB layer. While increasing the number of Ta insertions allows thicker CoFeB layers to remain perpendicular, the effective areal magnetic anisotropy does not improve with mor…
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We show by vector network analyzer ferromagnetic resonance measurements that low Gilbert dam** α down to 0.006 can be achieved in perpendicularly magnetized MgO/CoFeB/MgO thin films with ultra-thin insertions of Ta in the CoFeB layer. While increasing the number of Ta insertions allows thicker CoFeB layers to remain perpendicular, the effective areal magnetic anisotropy does not improve with more insertions, and also comes with an increase in α.
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Submitted 13 August, 2014; v1 submitted 10 June, 2014;
originally announced June 2014.
