Showing 1–6 of 6 results for author: Teo, S L

Electrical Control Grain Dimensionality with Multilevel Magnetic Anisotropy

Authors: Shengyao Li, Sabpreet Bhatti, Siew Lang Teo, Ming Lin, Xinyue Pan, Zherui Yang, Peng Song, Wanghao Tian, Xinyu He, Jianwei Chai, Xian Jun Loh, Qiang Zhu, S. N. Piramanayagam, Xiao Renshaw Wang

Abstract: In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimens… ▽ More In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimensionality, there is a lack of experimental evidence for electrically controlling grain dimensionality, thereby impeding the efficiency of magnetic anisotropy modulation. Here, we demonstrate an electric field control of grain dimensionality and prove it as the active mechanism for tuning interfacial magnetism. The reduction in grain dimensionality is associated with a transition from ferromagnetic to superparamagnetic behavior. We achieve a non-volatile and reversible modulation of the coercivity in both the ferromagnetic and superparamagnetic regimes. Subsequent electrical and elemental analysis confirms the variation in grain dimensionality upon the application of gate voltages, revealing a transition from a multidomain to a single-domain state accompanied by a reduction in grain dimensionality. Furthermore, we exploit the influence of grain dimensionality on domain wall motion, extending its applicability to multilevel magnetic memory and synaptic devices. Our results provide a strategy for tuning interfacial magnetism through grain size engineering for advancements in high-performance spintronics. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Giant third-order nonlinear Hall effect in misfit layer compound (SnS)${1.17}$(NbS$_2$)$_3$

Authors: Shengyao Li, Xueyan Wang, Zherui Yang, Lijuan Zhang, Siew Lang Teo, Ming Lin, Ri He, Naizhou Wang, Peng Song, Wanghao Tian, Xian Jun Loh, Qiang Zhu, Bo Sun, X. Renshaw Wang

Abstract: Nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability (BCP) tensor. Here we demonstrate a giant THE in… ▽ More Nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability (BCP) tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)${1.17}$(NbS$_2$)$_3$. While the THE is prohibited in individual NbS$_2$ and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering. △ Less

Submitted 31 January, 2024; originally announced January 2024.

Synaptic modulation of conductivity and magnetism in a CoPt-based electrochemical transistor

Authors: Shengyao Li, Bojun Miao, Xueyan Wang, Siew Lang Teo, Ming Lin, Qiang Zhu, S. N. Piramanayagam, X. Renshaw Wang

Abstract: Among various types of neuromorphic devices towards artificial intelligence, the electrochemical synaptic transistor emerges, in which the channel conductance is modulated by the insertion of ions according to the history of gate voltage across the electrolyte. Despite the striking progress in exploring novel channel materials, few studies report on the ferromagnetic metal-based synaptic transisto… ▽ More Among various types of neuromorphic devices towards artificial intelligence, the electrochemical synaptic transistor emerges, in which the channel conductance is modulated by the insertion of ions according to the history of gate voltage across the electrolyte. Despite the striking progress in exploring novel channel materials, few studies report on the ferromagnetic metal-based synaptic transistors, limiting the development of spin-based neuromorphic devices. Here, we present synaptic modulation of both conductivity as well as magnetism based on an electrochemical transistor with a metallic channel of ferromagnetic CoPt alloy. We first demonstrate its essential synaptic functionalities in the transistor, including depression and potentiation of synaptic weight, and paired-pulse facilitation. Then, we show a short- to long-term plasticity transition induced by different gate parameters, such as amplitude, duration, and frequency. Furthermore, the device presents multilevel and reversible nonvolatile states in both conductivity and coercivity. The results demonstrate simultaneous modulation of conductivity and magnetism, paving the way for building future spin-based multifunctional synaptic devices. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors

Authors: Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman, Wei Fu, Sarthak Das, Fabio Bussolotti, Rainer Lee, Siew Lang Teo, Ding Huang, Ivan Verzhbitskiy, Zhuojun Jiang, Zhuoling Jiang, Jian Wei Chai, Shi Wun Tong, Zi-En Ooi, Calvin Pei Yu Wong, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau

Abstract: Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,… ▽ More Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Low Thermal Conductivity Phase Change Memory Superlattices

Authors: **g Ning, Xilin Zhou, Yunzheng Wang, Takashi Yagi, Janne Kalikka, Siew Lang Teo, Zhitang Song, Michel Bosman, Robert E. Simpson

Abstract: Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase t… ▽ More Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by do** the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory. △ Less

Submitted 30 September, 2022; originally announced September 2022.

Comments: 4 Figures, 7 Supplementary Figures, 27 pages including a supplement

Low energy switching of phase change materials using a 2D thermal boundary layer

Authors: **g Ning, Yunzheng Wang, Ting Yu Teo, Chung-Che Huang, Ioannis Zeimpekis, Katrina Morgan, Siew Lang Teo, Daniel W. Hewak, Michel Bosman, Robert E. Simpson

Abstract: The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM e… ▽ More The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM energy inefficient. Here, we improve the energy efficiency of the laser-induced phase transitions by inserting a layer of two-dimensional (2D) material, either MoS2 or WS2, between the silica or silicon and the PCM. The 2D material reduces the required laser power by at least 40% during the amorphization (RESET) process, depending on the substrate. Thermal simulations confirm that both MoS2 and WS2 2D layers act as a thermal barrier, which efficiently confines energy within the PCM layer. Remarkably, the thermal insulation effect of the 2D layer is equivalent to a ~100 nm layer of SiO2. The high thermal boundary resistance induced by the van der Waals (vdW)-bonded layers limits the thermal diffusion through the layer interfaces. Hence, 2D materials with stable vdW interfaces can be used to improve the thermal efficiency of PCM-tuned Si photonic devices. Furthermore, our waveguide simulations show that the 2D layer does not affect the propagating mode in the Si waveguide, thus this simple additional thin film produces a substantial energy efficiency improvement without degrading the optical performance of the waveguide. Our findings pave the way for energy-efficient laser-induced structural phase transitions in PCM-based reconfigurable photonic devices. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Comments: 34 pages, 12 figures