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xURLCC in 6g with meshed RAN
Authors:
Mohammad Ali Khoshkholghi,
Toktam Mahmoodi,
Subhankar Pal,
Subhash Chopra,
Mayuri Tendulkar,
Sandip Sarkar
Abstract:
5G Ultra-Reliable Low Latency Communications Technology (URLLC) will not be able to provide extremely reliable low latency services to the complex networks in 6G. Moreover, URLLC that began with 5G has to be refined and improved in 6G to provide xURLCC (extreme URLCC) with sub-millisecond latency, for supporting diverse mission-critical applications. This paper aims to highlight the importance of…
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5G Ultra-Reliable Low Latency Communications Technology (URLLC) will not be able to provide extremely reliable low latency services to the complex networks in 6G. Moreover, URLLC that began with 5G has to be refined and improved in 6G to provide xURLCC (extreme URLCC) with sub-millisecond latency, for supporting diverse mission-critical applications. This paper aims to highlight the importance of peer-to-peer mesh connectivity for services that require xURLLC. Deploying mesh connectivity among RAN nodes would add significant value to the current 5G New Radio (5G NR) enabling 6G to increase flexibility and reliability of the networks while reducing the inherent latency introduced by the core network. To provide a mesh connectivity in RAN, the nodes should be able to communicate with each other directly and be independent from the mobile core network so that data can be directly exchanged between base stations (gNBs) whereas certain aspects of signalling procedure including data session establishment will be managed by RAN itself. In this paper, we introduce several architectural choices for a mesh network topology that could potentially be crucial to a number of applications. In addition, three possible options to create mesh connectivity in RAN are provided, and their pros and cons are discussed in detail.
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Submitted 19 January, 2023;
originally announced January 2023.
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Superconductor to weak-insulator transitions in disordered Tantalum Nitride films
Authors:
Nicholas P. Breznay,
Mihir Tendulkar,
Li Zhang,
Sang-Chul Lee,
Aharon Kapitulnik
Abstract:
We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hop** transport. Superconducting films exhibit a magnetic field-tuned SIT, whose insulating ground state at high field appears to be a quantum-…
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We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hop** transport. Superconducting films exhibit a magnetic field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents $z ν\approx$ 1.3, with a corresponding critical field $H_c \ll H_{c2}$. The Hall effect shows a crossing point near $H_c$, but with a non-universal critical value $ρ_{xy}^c$ comparable to the normal state Hall resistivity. We propose that high-carrier density metals will always exhibit this pattern of behavior at the boundary between superconducting and (trivially) insulating ground states.
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Submitted 5 May, 2017; v1 submitted 4 May, 2017;
originally announced May 2017.
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Hall conductivity dominated by fluctuations near the superconducting transition in disordered films
Authors:
Nicholas P. Breznay,
Karen Michaeli,
Konstantin S. Tikhonov,
Alexander M. Finkel'stein,
Mihir Tendulkar,
Aharon Kapitulnik
Abstract:
We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above $T_c$ and magnetic fields well above the upper critical field, $\text{\text{H}}_{c2}(0)$. This contribution arises from Aslamazov-Larkin superconducting fluctuations, and we find quantitat…
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We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above $T_c$ and magnetic fields well above the upper critical field, $\text{\text{H}}_{c2}(0)$. This contribution arises from Aslamazov-Larkin superconducting fluctuations, and we find quantitative agreement between our data and recent theoretical analysis based on time dependent Ginzburg-Landau theory.
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Submitted 26 August, 2012; v1 submitted 22 October, 2010;
originally announced October 2010.
