Showing 1–2 of 2 results for author: Ten-Eyck, G

Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems

Authors: M. Rudolph, P. Harvey-Collard, R. Jock, N. T. Jacobson, J. Wendt, T. Pluym, J. Dominguez, G. Ten-Eyck, R. Manginell, M. P. Lilly, M. S. Carroll

Abstract: Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interact… ▽ More Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe. △ Less

Submitted 16 May, 2017; originally announced May 2017.

Journal ref: in 2016 IEEE International Electron Devices Meeting (IEDM) (2016) pp. 34.1.1-34.1.4

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

Authors: M. J. Curry, T. D. England, N. C. Bishop, G. Ten-Eyck, J. R. Wendt, T. Pluym, M. P. Lilly, S. M. Carr, M. S. Carroll

Abstract: We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signa… ▽ More We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Comments: Reprinted with permission from M. J. Curry, et alii. Copyright 2015, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the AIP Publishing LLC. 5 pages, 4 figures

Journal ref: App. Phys. Lett. 106, 203505 (2015)