Showing 1–28 of 28 results for author: Tejeda, A

Comment on "Rotating Spin and Giant Splitting: Unoccupied Surface Electronic Structure of Tl/Si(111)"

Authors: Abraham F. Campos, Kang Wang, Antonio Tejeda

Abstract: Rashba effect in 2D systems is extensively studied nowadays due to spintronics applications. The Letter studies the fundamentals of spin-orbit interaction in 2D systems. Experimental evidence is claimed for the rotation of the spin polarization vector in Tl/Si from an in-plane Rashba polarization at $\overlineΓ$ to the surface normal at $\overline{K}$($\overline{K}'$) valleys. These results are po… ▽ More Rashba effect in 2D systems is extensively studied nowadays due to spintronics applications. The Letter studies the fundamentals of spin-orbit interaction in 2D systems. Experimental evidence is claimed for the rotation of the spin polarization vector in Tl/Si from an in-plane Rashba polarization at $\overlineΓ$ to the surface normal at $\overline{K}$($\overline{K}'$) valleys. These results are possible thanks to the single setup that could measure spin-resolved inverse photoemission (IPES) with in- and out-of- plane sensitivity. This Comment clarifies that (i) when considering the full data set in the Letter, the in-plane polarization does not vanish at the valleys, (ii) the Letter does not explain that the out-of-plane data are not real measurements, in the sense that they are derived by considering the fulfillment of a theoretical symmetry or from an unspecified data treatment. △ Less

Submitted 1 July, 2023; v1 submitted 22 March, 2023; originally announced March 2023.

Comments: Submitted to Phys. Rev. Lett

Line Congruences on singular surfaces

Authors: Débora Lopes, Tito Alexandro Medina Tejeda, Maria Aparecida Soares Ruas, Igor Chagas Santos

Abstract: This paper is a first step in order to extend Kummer's theory for line congruences to the case $\lbrace x, ξ\rbrace $, where $x: U \rightarrow \mathbb{R}^3$ is a smooth map and $ξ: U \rightarrow \mathbb{R}^3$ is a proper frontal. We show that if $\lbrace x, ξ\rbrace$ is a normal congruence, the equation of the principal surfaces is a multiple of the equation of the developable surfaces, furthermor… ▽ More This paper is a first step in order to extend Kummer's theory for line congruences to the case $\lbrace x, ξ\rbrace $, where $x: U \rightarrow \mathbb{R}^3$ is a smooth map and $ξ: U \rightarrow \mathbb{R}^3$ is a proper frontal. We show that if $\lbrace x, ξ\rbrace$ is a normal congruence, the equation of the principal surfaces is a multiple of the equation of the developable surfaces, furthermore, the multiplicative factor is associated to the singular set of $ξ$. △ Less

Submitted 25 October, 2022; originally announced October 2022.

CDW signatures in the electronic structure of LaSb2 at 13 K and metal-insulator transition

Authors: I. Palacio, J. Obando-Guevara, L. Chen, M. N. Nair, M. A. González Barrio, E. Papalazarou, P. Le Fèvre, R. F. Luccas, H. Suderow, P. Canfield, A. Taleb-Ibrahimi, E. G. Michel, A. Mascaraque, A. Tejeda

Abstract: Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functiona… ▽ More Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. ARPES measurements at 200 K show a metallic system while it appears to be semiconducting at 13 K, at odds with existing resistivity measurements. At 13 K, ARPES shows the band folding of the inner Fermi surface pockets, with considerable spectral weight on the folded band. We find a nesting vector at q = 0.25$\pm$0.02 Å -1. In addition, we observe Umklapps of other bands due to the onset of the new periodicity, together with a semiconducting behavior in the whole reciprocal space. Calculations demonstrate that the folded band is associated with the La-Sb layer and that in-plane distortion is the most probable structural modification in the system, probably affecting the whole unit cell. △ Less

Submitted 9 March, 2022; v1 submitted 7 February, 2022; originally announced February 2022.

Comments: In this work, the discussion presents two interpretations to explain the experimental results. We withdraw this work because after further discussions and data analysis we have concluded that only one of the two interpretations is consistent with the experimental results

Spin- and angle-resolved inverse photoemission setup with spin orientation independent from electron incidence angle

Authors: Abraham F. Campos, Philippe Duret, Stéphane Cabaret, Thomas Duden, Antonio Tejeda

Abstract: A new spin- and angle-resolved inverse photoemission setup with a low-energy electron source is presented. The spin-polarized electron source, with a compact design, can decouple the spin polarization vector from the electron beam propagation vector, allowing to explore any spin orientation at any wavevector in angle-resolved inverse photoemission. The beam polarization can be tuned to any preferr… ▽ More A new spin- and angle-resolved inverse photoemission setup with a low-energy electron source is presented. The spin-polarized electron source, with a compact design, can decouple the spin polarization vector from the electron beam propagation vector, allowing to explore any spin orientation at any wavevector in angle-resolved inverse photoemission. The beam polarization can be tuned to any preferred direction with a shielded electron optical system, preserving the parallel beam condition. We demonstrate the performances of the setup by measurements on Cu(001) and Au(111). We estimate at room temperature the energy resolution of the overall system to be $\sim170$ meV from $k_{B}T_{eff}$ of a Cu(001) Fermi level, allowing a direct comparison to photoemission. The spin-resolved operation of the setup has been demonstrated by measuring the Rashba splitting of the Au(111) Shockley surface state. The effective polarization of the electron beam is $P=30\pm3$ \% and the wavevector resolution is $Δk_{F}\lesssim0.06$ Å$^{-1}$. Measurements on the Au(111) surface state demonstrate how the electron beam polarization direction can be tuned in the three spatial dimensions. The maximum of the spin asymmetry is reached when the electron beam polarization is aligned with the in-plane spin-polarization of the Au(111) surface state. △ Less

Submitted 21 July, 2022; v1 submitted 25 October, 2021; originally announced October 2021.

Comments: The following article has been accepted by Review of Scientific Instruments

Photoemission signature of momentum-dependent hybridization in CeCoIn$_5$

Authors: R. Kurleto, M. Fidrysiak, L. Nicolaï, J. Minár, M. Rosmus, Ł. Walczak, A. Tejeda, J. E. Rault, F. Bertran, A. P. Kądzielawa, D. Legut, D. Gnida, D. Kaczorowski, K. Kissner, F. Reinert, J. Spałek, P. Starowicz

Abstract: Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-… ▽ More Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\barΓ$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model. △ Less

Submitted 4 September, 2021; v1 submitted 14 January, 2021; originally announced January 2021.

Comments: 15 pages, 9 figures

Journal ref: Phys. Rev. B 104, 125104 (2021)

Extendibility and boundedness of invariants on singularities of wavefronts

Authors: Tito Alexandro Medina Tejeda

Abstract: We investigate necessary and sufficient conditions for the extendibility and boundedness of Gaussian curvature, Mean curvature and principal curvatures near all types of singularities on fronts. We also study the convergence to infinite limits of these geometrical invariants and show how this is tightly related to a particular property of uniform approximation of fronts by parallel surfaces. We investigate necessary and sufficient conditions for the extendibility and boundedness of Gaussian curvature, Mean curvature and principal curvatures near all types of singularities on fronts. We also study the convergence to infinite limits of these geometrical invariants and show how this is tightly related to a particular property of uniform approximation of fronts by parallel surfaces. △ Less

Submitted 14 July, 2021; v1 submitted 18 November, 2020; originally announced November 2020.

MSC Class: 57R45 (Primary); 53A05; 53A55 (Secondary)

An epitaxial graphene platform for zero-energy edge state nanoelectronics

Authors: Vladimir S. Prudkovskiy, Yiran Hu, Yue Hu, Kaimin Zhang, Peixuan Ji, Grant Nunn, Jian Zhao, Chenqian Shi, Antonio Tejeda, David Wander, Alessandro De Cecco, Clemens B. Winkelmann, Yuxuan Jiang, Tianhao Zhao, Katsunori Wakabayashi, Zhigang Jiang, Lei Ma, Claire Berger, Walt A. de Heer

Abstract: Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge… ▽ More Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater that the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics. △ Less

Submitted 25 October, 2022; v1 submitted 8 October, 2019; originally announced October 2019.

Comments: File contains article and supplementary. Nature Communications (in print)

Journal ref: Nature Communications (2022) 13, 7814

The fundamental theorem for singular surfaces with limiting tangent planes

Authors: Tito Alexandro Medina Tejeda

Abstract: In this paper, we prove a similar result to the fundamental theorem of regular surfaces in classical differential geometry, which extends the classical theorem to the entire class of singular surfaces in Euclidean 3-space known as frontals. Also, we characterize in a simple way these singular surfaces and its fundamental forms with local properties in the differential of its parametrization and de… ▽ More In this paper, we prove a similar result to the fundamental theorem of regular surfaces in classical differential geometry, which extends the classical theorem to the entire class of singular surfaces in Euclidean 3-space known as frontals. Also, we characterize in a simple way these singular surfaces and its fundamental forms with local properties in the differential of its parametrization and decompositions in the matrices associated to the fundamental forms. In particular we introduce new types of curvatures which can be used to characterize wave fronts. The only restriction on the parametrizations that is assumed in several occasions is that the singular set has empty interior. △ Less

Submitted 5 October, 2019; v1 submitted 13 August, 2019; originally announced August 2019.

MSC Class: 53A40 (Primary); 53A05; 57R45 (Secondary)

Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes

Authors: A. L. Miettinen, M. S. Nevius, W. Ko, M. Kolmer, A. -P Li, M. N. Nair, A. Taleb-Ibrahimi, B. Kierren, L. Moreau, E. H. Conrad, A. Tejeda

Abstract: Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewal… ▽ More Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewalls zig-zag ribbons are metallic with a pair of n-doped edge states associated with asymmetric edge terminations, In contrast, 4H-SiC zig-zag ribbons are strongly bonded to the SiC; severely distorting the ribbon's $π$-bands. $\text{H}_2$-passivation of the 4H ribbons returns them to a metallic state but show no evidence of edge states. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Comments: 6 figure

Journal ref: Phys. Rev. B 100, 045425 (2019)

Time resolved photoemission spectroscopy of electronic cooling and localization in CH$_3$NH$_3$PbI$_3$ crystals

Authors: Zhesheng Chen, Min-i Lee, Zailan Zhang, Hiba Diab, Damien Garrot, Ferdinand Lédée, Pierre Fertey, Evangelos Papalazarou, Marino Marsi, Carlito Ponseca, Emmanuelle Deleporte, Antonio Tejeda, Luca Perfetti

Abstract: We measure the surface of CH$_3$NH$_3$PbI$_3$ single crystals by making use of two photon photoemission spectroscopy. Our method monitors the electronic distribution of photoexcited electrons, explicitly discriminating the initial thermalization from slower dynamical processes. The reported results disclose the fast dissipation channels of hot carriers (0.25 ps), set a upper bound to the surface i… ▽ More We measure the surface of CH$_3$NH$_3$PbI$_3$ single crystals by making use of two photon photoemission spectroscopy. Our method monitors the electronic distribution of photoexcited electrons, explicitly discriminating the initial thermalization from slower dynamical processes. The reported results disclose the fast dissipation channels of hot carriers (0.25 ps), set a upper bound to the surface induced recombination velocity ($<4000$ cm/s) and reveal the dramatic effect of shallow traps on the electrons dynamics. The picosecond localization of excited electrons in degraded CH$_3$NH$_3$PbI$_3$ samples is consistent with the progressive reduction of photoconversion efficiency in operating devices. Minimizing the density of shallow traps and solving the aging problem may boost the macroscopic efficiency of solar cells to the theoretical limit. △ Less

Submitted 1 September, 2017; originally announced September 2017.

Comments: 7 pages, 8 figures

Journal ref: Phys. Rev. Materials 1, 045402 (2017)

Wide bandgap semiconductor from a hidden 2D incommensurate graphene phase

Authors: Matthew Conrad, Feng Wang, Meredith Nevius, Katherine **kins, Arlensiú Celis, Maya Nair, Amina Taleb-Ibrahim, Antonio Tejeda, Yves Garreau, Alina Vlad, Alessandro Coati, Paul Miceli, Edward Conrad

Abstract: Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work.… ▽ More Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work. We show, contrary to assumptions of the last forty years, that the buffer graphene layer is not commensurate with SiC. The new modulated structure we've found resolves a long standing contradiction where ab initio calculations expect a metallic buffer, while experimentally it is found to be a semiconductor. Model calculations using the new incommensurate structure show that the semiconducting $π$-band character of the buffer comes from partially hybridized graphene incommensurate boundaries surrounding unperturbed graphene islands. △ Less

Submitted 10 October, 2016; v1 submitted 6 October, 2016; originally announced October 2016.

Comments: 17 pages, 4 figures, 1 table, 47 references, supplemental material: 15 pages, 4 figures

Excitonic Emission in Organic-Inorganic Lead Iodide Perovskite Single Crystals

Authors: Hiba Diab, Gaëlle Trippé-Allard, Ferdinand Lédée, Khaoula Jemli, Christèle Vilar, Guillaume Bouchez, Vincent L. R. Jacques, Antonio Tejeda, Jean-Sébastien Lauret, Emmanuelle Deleporte, Damien Garrot

Abstract: Hybrid perovskite thin films have demonstrated impressive performance for solar energy conversion and optoelectronic applications. However, further progress will benefit from a better knowledge of the intrinsic photophysics of materials. Here, the low temperature emission properties of CH3NH3PbI3 single crystals are investigated and compared to those of thin polycrystalline films by means of stead… ▽ More Hybrid perovskite thin films have demonstrated impressive performance for solar energy conversion and optoelectronic applications. However, further progress will benefit from a better knowledge of the intrinsic photophysics of materials. Here, the low temperature emission properties of CH3NH3PbI3 single crystals are investigated and compared to those of thin polycrystalline films by means of steady-state and time-resolved photoluminescence spectroscopy. While the emission properties of thin films and crystals appear relatively similar at room temperature, low temperature photoluminescence spectroscopy reveals striking differences between the two materials. Single crystals photoluminescence exhibits a sharp excitonic emission at high energy, with Full Width at Half Maximum of only 5 meV, assigned to free excitonic recombination and a broad band at low energy. We analyzed the thermal evolution of the free excitonic intensity and linewidth. An excitonic binding energy of 28 meV is extracted from the quenching of the photoluminescence. We highlight a strong broadening of the emission due to LO phonon coupling. The free excitonic emission turned to be very short-lived with a sub-nanosecond dynamics, mainly induced by the fast trap** of the excitons. The free excitonic emission is completely absent of the thin films spectra, which are dominated by trap states band. The trap states energies, width and recombination dynamics present important similarities between films and crystals. These results suggest that the trap states are formed at the surface and grain interface of perovskites. △ Less

Submitted 6 June, 2016; originally announced June 2016.

Comments: 29 pages, 10 figures

Uncertainty principle for experimental measurements: Fast versus slow probes

Authors: Philipp Hansmann, Thomas Ayral, Antonio Tejeda, Silke Biermann

Abstract: The result of a physical measurement depends on the timescale of the experimental probe. In solid-state systems, this simple quantum mechanical principle has far-reaching consequences: the interplay of several degrees of freedom close to charge, spin or orbital instabilities combined with the disparity of the time scales associated to their fluctuations can lead to seemingly contradictory experime… ▽ More The result of a physical measurement depends on the timescale of the experimental probe. In solid-state systems, this simple quantum mechanical principle has far-reaching consequences: the interplay of several degrees of freedom close to charge, spin or orbital instabilities combined with the disparity of the time scales associated to their fluctuations can lead to seemingly contradictory experimental findings. A particularly striking example is provided by systems of adatoms adsorbed on semiconductor surfaces where different experiments -- angle-resolved photoemission, scanning tunneling microscopy and core-level spectroscopy -- suggest different ordering phenomena. Using most recent first principles many-body techniques, we resolve this puzzle by invoking the time scales of fluctuations when approaching the different instabilities. These findings suggest a re-interpretation of ordering phenomena and their fluctuations in a wide class of solid-state systems ranging from organic materials to high-temperature superconducting cuprates. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Comments: 12 pages, 4 figures

Journal ref: Nature Scientific Reports vol. 6, 19728 (2016)

Semiconducting graphene from highly ordered substrate interactions

Authors: M. S. Nevius, M. Conrad, F. Wang, A. Celis, M. N. Nair, A. Taleb-Ibrahimi, A. Tejeda, E. H. Conrad

Abstract: While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphe… ▽ More While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphene film can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a bandgap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene. △ Less

Submitted 3 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. Lett. 115, 136802 (2015)

Symmetry of the Fermi surface and evolution of the electronic structure across the paramagnetic-helimagnetic transition in MnSi/Si(111)

Authors: Alessandro Nicolaou, Matteo Gatti, Elena Magnano, Patrick Le Fèvre, Federica Bondino, François Bertran, Antonio Tejeda, Michèle Sauvage-Simkin, Alina Vlad, Yves Garreau, Alessandro Coati, Nicolas Guérin, Fulvio Parmigiani, Amina Taleb-Ibrahimi

Abstract: MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS… ▽ More MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS symmetry and the evolution of the electronic structure across the paramagnetic-helimagnetic transition at T$_C$ $\sim$ 40 K, along with the appearance of sharp quasiparticle emission below T$_C$. The shape of the resulting FS is found to fulfill robust nesting effects. These effects can be at the origin of strong magnetic fluctuations not accounted for by state-of-art quasiparticle self-consistent GW approximation. From this perspective, the unforeseen quasiparticle dam** detected in the paramagnetic phase and relaxing only below T$_C$, along with the persistence of the d-bands splitting well above T$_C$, at odds with a simple Stoner model for itinerant magnetism, open the search for exotic magnetic interactions favored by FS nesting and affecting the quasiparticles lifetime. △ Less

Submitted 20 April, 2015; originally announced April 2015.

Journal ref: Phys. Rev. B 92, 081110 (2015)

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

Authors: Feng Wang, Gang Liu, Sara Rothwell, Meredith Nevius, Antonio Tejeda, Amina Taleb-Ibrahimi, Leonard Feldman, Philip Cohen, Edward Conrad

Abstract: All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of semiconducting graphene. While chemical functionalization was thought to be a route to semiconducting graphene, disorder in the chemical adsorbates, leading to low mobilities, have proved to be a hurdle in its pr… ▽ More All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of semiconducting graphene. While chemical functionalization was thought to be a route to semiconducting graphene, disorder in the chemical adsorbates, leading to low mobilities, have proved to be a hurdle in its production. We demonstrate a new approach to produce semiconducting graphene that uses a small concentration of covalently bonded surface nitrogen, not as a means to functionalize graphene, but instead as a way to constrain and bend graphene. We demonstrate that a submonolayer concentration of nitrogen on SiC is sufficient to pin epitaxial graphene to the SiC interface as it grows, causing the graphene to buckle. The resulting 3-dimensional modulation of the graphene opens a band-gap greater than 0.7eV in the otherwise continuous metallic graphene sheet. △ Less

Submitted 15 April, 2014; v1 submitted 13 June, 2013; originally announced June 2013.

Exceptional ballistic transport in epitaxial graphene nanoribbons

Authors: Jens Baringhaus, Ming Ruan, Frederik Edler, Antonio Tejeda, Muriel Sicot, Amina Taleb Ibrahimi, Zhigang Jiang, Edward Conrad, Claire Berger, Christoph Tegenkamp, Walt A. de Heer

Abstract: Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We sho… ▽ More Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene ribbons behave as electronic waveguides or quantum dots. We show that transport in these ribbons is dominated by two components of the ground state transverse waveguide mode, one that is ballistic and temperature independent, and a second thermally activated component that appears to be ballistic at room temperature and insulating at cryogenic temperatures. At room temperature the resistance of both components abruptly increases with increasing length, one at a length of 160 nm and the other at 16 micrometers. These properties appear to be related to the lowest energy quantum states in the charge neutral ribbons. Since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well. △ Less

Submitted 25 August, 2013; v1 submitted 22 January, 2013; originally announced January 2013.

Journal ref: Nature 506, 349 (2014)

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

Authors: J. Hicks, A. Tejeda, A. Taleb-Ibrahimi, M. S. Nevius, F. Wang, K. Shepperd, J. Palmer, F. Bertran, P. Le Fèvre, J. Kunc, W. A. de Heer, C. Berger, E. H. Conrad

Abstract: A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semicon… ▽ More A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research. △ Less

Submitted 19 October, 2012; v1 submitted 12 October, 2012; originally announced October 2012.

Comments: 11 pages, 7 figures

High Van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by gold clusters intercalation

Authors: M. N. Nair, M. Cranney, F. Vonau, D. Aubel, P. Le Fèvre, A. Tejeda, F. Bertran, A. Taleb-Ibrahimi, L. Simon

Abstract: Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify th… ▽ More Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify the band structure of graphene around the Van Hove singularities (VHs) by a strong extension without charge transfer. This result gives a new insight on the role of the intercalant in the renormalization of the bare electronic band structure of graphene usually observed in Graphite and Graphene Intercalation Compounds. △ Less

Submitted 16 January, 2012; originally announced January 2012.

Silicon intercalation into the graphene-SiC interface

Authors: F. Wang, K. Shepperd, J. Hicks, M. S. Nevius, H. Tinkey, A. Tejeda, A. Taleb-Ibrahimi, F. Bertran, P. Le F`evre, D. B. Torrance, P. First, W. A. de Heer, A. A. Zakharov, E. H. Conrad

Abstract: In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6… ▽ More In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface. △ Less

Submitted 12 November, 2011; originally announced November 2011.

Comments: 6 pages, 8 figures, submitted to PRB

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Authors: J. Hicks, M. Sprinkle, K. Shepperd, F. Wang, A. Tejeda, A. Taleb-Ibrahimi, F. Bertran, P. Le Fèvre, W. A. de Heer, C. Berger, E. H. Conrad

Abstract: Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the… ▽ More Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material. △ Less

Submitted 2 December, 2010; originally announced December 2010.

Comments: 7 pages, 6 figures, submitted to PRB

New electronic orderings observed in cobaltates under the influence of misfit periodicities

Authors: A. Nicolaou, V. Brouet, M. Zacchigna, I. Vobornik, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, C. Chambon, S. Kubsky, S. Hébert, H. Muguerra, D. Grebille

Abstract: We study with ARPES the electronic structure of CoO2 slabs, stacked with rock-salt (RS) layers exhibiting a different (misfit) periodicity. Fermi Surfaces (FS) in phases with different do** and/or periodicities reveal the influence of the RS potential on the electronic structure. We show that these RS potentials are well ordered, even in incommensurate phases, where STM images reveal broad strip… ▽ More We study with ARPES the electronic structure of CoO2 slabs, stacked with rock-salt (RS) layers exhibiting a different (misfit) periodicity. Fermi Surfaces (FS) in phases with different do** and/or periodicities reveal the influence of the RS potential on the electronic structure. We show that these RS potentials are well ordered, even in incommensurate phases, where STM images reveal broad stripes with width as large as 80Å. The anomalous evolution of the FS area at low do**s is consistent with the localization of a fraction of the electrons. We propose that this is a new form of electronic ordering, induced by the potential of the stacked layers (RS or Na in NaxCoO2) when the FS becomes smaller than the Brillouin Zone of the stacked structure. △ Less

Submitted 12 March, 2010; originally announced March 2010.

Journal ref: Europhysics Letters 89, 37010 (2010)

Experimental study of the incoherent spectral weight in the photoemission spectra of the misfit cobaltate [Bi2Ba2O4][CoO2]2

Authors: A. Nicolaou, V. Brouet, M. Zacchigna, I. Vobornik, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, S. Hébert, H. Muguerra, D. Grebille

Abstract: Previous ARPES experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi leve… ▽ More Previous ARPES experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi level. We show that one can use their relative weight to estimate self-consistently the quasiparticle weight Z, which turns out to be very small Z=0.15 +/- 0.05. We suggest this method could be a reliable way to study the evolution of correlations in cobaltates and for comparison with other strongly correlated systems. △ Less

Submitted 12 March, 2010; originally announced March 2010.

Journal ref: Physical Review Letters 104, 056403 (2010)

Structure and electronic properties of epitaxial graphene grown on SiC

Authors: M. Sprinkle, J. Hicks, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, H. Tinkey, M. C. Clark, P. Soukiassian, D. Martinotti, J. Hass, W. A. de Heer, C. Berger, E. H. Conrad

Abstract: We review progress in develo** epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC… ▽ More We review progress in develo** epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane. △ Less

Submitted 21 January, 2010; originally announced January 2010.

Comments: 13 pages, 16 figures

First direct observation of a nearly ideal graphene band structure

Authors: M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, C. Berger, W. A. de Heer, A. Lanzara, E. H. Conrad

Abstract: Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones… ▽ More Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults. △ Less

Submitted 30 July, 2009; originally announced July 2009.

Comments: 5 pages, 4 figures

Direct observation of strong correlations near the band insulator regime of Bi misfit cobaltates

Authors: V. Brouet, A. Nicolaou, M. Zacchigna, A. Tejeda, L. Patthey, S. Hebert, W. Kobayashi, H. Muguerra, D. Grebille

Abstract: We present the first angle-resolved photoemission (ARPES) measurement of Fermi Surface in the "misfit" cobaltate [Bi2Ba2O4].[CoO2]~2. This compound contains the same triangular Co planes as Na cobaltates, but in a different 3D environment. Our data establish the similarity of their electronic structure. We propose that the peculiar lineshape of all cobaltates is of the "peak-dip-hump" type, due… ▽ More We present the first angle-resolved photoemission (ARPES) measurement of Fermi Surface in the "misfit" cobaltate [Bi2Ba2O4].[CoO2]~2. This compound contains the same triangular Co planes as Na cobaltates, but in a different 3D environment. Our data establish the similarity of their electronic structure. We propose that the peculiar lineshape of all cobaltates is of the "peak-dip-hump" type, due to strong many-body effects. We detect a progressive transfer of spectral weight from the quasiparticle feature near Ef to a broad hump in misfit phases where Ba is replaced by Sr or Ca. This indicates stronger many-body interactions in proximity of the band insulator regime, which we attribute to the presence of unusual magnetic excitations. △ Less

Submitted 26 June, 2007; originally announced June 2007.

Comments: 4 pages, 4 figures

Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

Authors: R. Cortes, A. Tejeda, J. Lobo, C. Didiot, B. Kierren, D. Malterre, E. G. Michel, A. Mascaraque

Abstract: We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experimen… ▽ More We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice. △ Less

Submitted 2 January, 2006; originally announced January 2006.

Comments: 4 pages, 4 figures

Journal ref: PHYSICAL REVIEW LETTERS 96, 126103 (2006)

How different Fermi surface maps emerge in photoemission from Bi2212

Authors: M. C. Asensio, J. Avila, L. Roca, A. Tejeda, G. D. Gu, M. Lindroos, R. S. Markiewicz, A. Bansil

Abstract: We report angle-resolved photoemission spectra (ARPES) from the Fermi energy ($E_F$) over a large area of the ($k_x,k_y$) plane using 21.2 eV and 32 eV photons in two distinct polarizations from an optimally doped single crystal of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212), together with extensive first-principles simulations of the ARPES intensities. The results display a wide-ranging level of acc… ▽ More We report angle-resolved photoemission spectra (ARPES) from the Fermi energy ($E_F$) over a large area of the ($k_x,k_y$) plane using 21.2 eV and 32 eV photons in two distinct polarizations from an optimally doped single crystal of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212), together with extensive first-principles simulations of the ARPES intensities. The results display a wide-ranging level of accord between theory and experiment and clarify how myriad Fermi surface (FS) maps emerge in ARPES under various experimental conditions. The energy and polarization dependences of the ARPES matrix element help disentangle primary contributions to the spectrum due to the pristine lattice from those arising from modulations of the underlying tetragonal symmetry and provide a route for separating closely placed FS sheets in low dimensional materials. △ Less

Submitted 10 November, 2001; originally announced November 2001.

Comments: submitted to PRL