Absence of a Band Gap at Interface of a Metal and Highly Doped Monolayer $MoS_2$
Authors:
Alexander Kerelsky,
Ankur Nipane,
Drew Edelberg,
Dennis Wang,
Xiaodong Zhou,
Abdollah Motmaendadgar,
Hui Gao,
Saien Xie,
Kibum Kang,
Jiwoong Park,
James Teherani,
Abhay Pasupathy
Abstract:
High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as $MoS_2$ is key to unlocking their unique electronic and optoelectronic properties for fundamental research and device applications. Despite extensive experimental and theoretical efforts reliable ohmic contact to doped TMDCs remains elusive and would benefit from a better understanding of the underly…
▽ More
High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as $MoS_2$ is key to unlocking their unique electronic and optoelectronic properties for fundamental research and device applications. Despite extensive experimental and theoretical efforts reliable ohmic contact to doped TMDCs remains elusive and would benefit from a better understanding of the underlying physics of the metal-TMDC interface. Here we present measurements of the atomic-scale energy band diagram of junctions between various metals and heavily doped monolayer $MoS_2$ using ultra-high vacuum scanning tunneling microscopy (UHV-STM). Our measurements reveal that the electronic properties of these junctions are dominated by 2D metal induced gap states (MIGS). These MIGS are characterized by a spatially growing measured gap in the local density of states (L-DOS) of the $MoS_2$ within 2 nm of the metal-semiconductor interface. Their decay lengths extend from a minimum of ~0.55 nm near mid gap to as long as 2 nm near the band edges and are nearly identical for Au, Pd and graphite contacts, indicating that it is a universal property of the monolayer semiconductor. Our findings indicate that even in heavily doped semiconductors, the presence of MIGS sets the ultimate limit for electrical contact.
△ Less
Submitted 16 October, 2017; v1 submitted 23 May, 2017;
originally announced May 2017.
A Physically-Intuitive Method for Calculation of the Local Lattice Constant from a High-Resolution Transmission Electron Microscopy Image by Fourier Analysis
Authors:
James T. Teherani,
Judy L. Hoyt
Abstract:
We have developed a physically-intuitive method to calculate the local lattice constant as a function of position in a high-resolution transmission electron microscopy image by performing a two-dimensional fast Fourier transform. We apply a Gaussian filter with appropriate spatial full-width-half-max (FWHM) bandwidth to the image centered at the desired location to calculate the local lattice cons…
▽ More
We have developed a physically-intuitive method to calculate the local lattice constant as a function of position in a high-resolution transmission electron microscopy image by performing a two-dimensional fast Fourier transform. We apply a Gaussian filter with appropriate spatial full-width-half-max (FWHM) bandwidth to the image centered at the desired location to calculate the local lattice constant (as opposed to the average lattice constant). Fourier analysis of the filtered image yields the vertical and horizontal lattice constants at this location. The process is repeated by step** the Gaussian filter across the image to produce a set of local lattice constants in the vertical and horizontal direction as a function of position in the image. The method has been implemented in a freely available tool on nanoHUB.
△ Less
Submitted 11 September, 2013;
originally announced September 2013.
