Near ultraviolet photonic integrated lasers based on silicon nitride
Authors:
Anat Siddharth,
Thomas Wunderer,
Grigory Lihachev,
Andrey S. Voloshin,
Camille Haller,
Rui Ning Wang,
Mark Teepe,
Zhihong Yang,
Junqiu Liu,
Johann Riemensberger,
Nicolas Grandjean,
Noble Johnson,
Tobias J. Kippenberg
Abstract:
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window.…
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Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride (GaN) based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. Using self-injection locking to a high Q (0.4 $\times$ 10$^6$) photonic integrated microresonator we observe a phase noise reduction of the Fabry-Pérot laser at 461 nm by a factor greater than 100$\times$, limited by the device quality factor and back-reflection.
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Submitted 29 March, 2022; v1 submitted 4 December, 2021;
originally announced December 2021.
