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Effective electrical manipulation of topological antiferromagnet by orbital Hall effect
Authors:
Zhenyi Zheng,
Tao Zeng,
Tieyang Zhao,
Shu Shi,
Lizhu Ren,
Tongtong Zhang,
Lanxin Jia,
Youdi Gu,
Rui Xiao,
Hengan Zhou,
Qihan Zhang,
Jiaqi Lu,
Guilei Wang,
Chao Zhao,
Huihui Li,
Beng Kang Tay,
**gsheng Chen
Abstract:
Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate effective manipulation of antiferromagnetic order in Weyl semimetal Mn3Sn by orbital H…
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Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate effective manipulation of antiferromagnetic order in Weyl semimetal Mn3Sn by orbital Hall effect originated from metal Mn or oxide CuOx. While Mn3Sn is proven to be able to convert orbit current to spin current by itself, we find that inserting a heavy metal layer like Pt with proper thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behavior of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity, which is beneficial for constructing artificial neural network with high accuracy. Our work paves an alternative way to manipulate topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.
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Submitted 14 October, 2023;
originally announced October 2023.
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Manipulating Coherent Light Matter Interaction: Continuous Transition between Strong Coupling and Weak Coupling in MoS2 Monolayer Coupled with Plasmonic Nanocavities
Authors:
Songyan Hou,
Xingli Wang,
Landobasa Y. M. Tobing,
Zhenwei Xie,
Junhong Yu,
** Zhou,
Daohua Zhang,
Cuong Dang,
Philippe Coquet,
Beng Kang Tay,
Muhammad Danang Birowosuto,
Edwin Hang Tong Teo,
Hong Wang
Abstract:
Strong interactions between surface plasmons in ultra-compact nanocavities and excitons in two dimensional materials have attracted wide interests for its prospective realization of polariton devices at room temperature. Here, we propose a continuous transition from weak coupling to strong coupling between excitons in MoS2 monolayer and highly localized plasmons in ultra-compact nanoantenna. The n…
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Strong interactions between surface plasmons in ultra-compact nanocavities and excitons in two dimensional materials have attracted wide interests for its prospective realization of polariton devices at room temperature. Here, we propose a continuous transition from weak coupling to strong coupling between excitons in MoS2 monolayer and highly localized plasmons in ultra-compact nanoantenna. The nanoantenna is assembled by a silver nanocube positioned over a gold film and separated by a dielectric spacer layer. We observed a 1570-fold enhancement in the photoluminescence at weak coupling regime in hybrid nanocavities with thick spacer layers. The interaction between excitons and plasmons is then directly prompted to strong coupling regime by shrinking down the thickness of spacer layer. Room temperature formation of polaritons with Rabi splitting up to 190 meV was observed, which is the largest plasmon-exciton Rabi splitting reported in two dimensional materials. Numerical calculations quantified the relation between coupling strength, local density of states and spacer thickness, and revealed the transition between weak coupling and strong coupling in nanocavities. The findings in this work offer a guideline for feasible designs of plasmon-exciton interaction systems with gap plasmonic cavities.
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Submitted 21 August, 2019; v1 submitted 23 April, 2019;
originally announced April 2019.
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Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions
Authors:
Lin Niu,
Xinfeng Liu,
Chunxiao Cong,
Chunyang Wu,
Di Wu,
Tay Rong Chang,
Hong Wang,
Qingsheng Zeng,
Jiadong Zhou,
Xingli Wang,
Wei Fu,
Peng Yu,
Qundong Fu,
Sina Najmaei,
Zhuhua Zhang,
Boris I. Yakobson,
Beng Kang Tay,
Wu Zhou,
Horng Tay Jeng,
Hsin Lin,
Tze Chien Sum,
Chuanhong **,
Haiyong He,
Ting Yu,
Zheng Liu
Abstract:
Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth o…
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Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics.
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Submitted 18 June, 2015; v1 submitted 10 June, 2015;
originally announced June 2015.
