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Light-hole Exciton in Nanowire Quantum Dot
Authors:
Mathieu Jeannin,
Alberto Artioli,
Pamela Rueda-Fonseca,
Edith Bellet-Amalric,
Kuntheak Kheng,
Régis André,
Serge Tatarenko,
Joël Cibert,
David Ferrand,
Gilles Nogues
Abstract:
Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscienc…
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Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscience researchers. Here we use strain as a tool to create in a single magnetic nanowire quantum dot a light-hole exciton, an optically active quasiparticle formed from a single electron bound to a single light hole. In this frame, we provide a general description of the mixing within the hole quadruplet induced by strain or confinement. A multi-instrumental combination of cathodoluminescence, polarisation-resolved Fourier imaging and magneto-optical spectroscopy, allow us to fully characterize the hole ground state, including its valence band mixing with heavy hole states.
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Submitted 24 November, 2016;
originally announced December 2016.
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Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy
Authors:
P. Rueda-Fonseca,
M. Orrù,
E. Bellet-Amalric,
E. Robin,
M. Den Hertog,
Y. Genuist,
R. André,
S. Tatarenko,
J. Cibert
Abstract:
With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis, and energy dispersive electron spec…
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With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis, and energy dispersive electron spectrometry; the second approach uses scanning electron microscopy and the statistics of the relationship between the length of the tapered nanowires and their base diameter. Axial and radial growth are quantified using a diffusion-limited model adapted to the growth conditions; analytical expressions describe well the relationship between the NW length and the total molecular flux (taking into account the orientation of the effusion cells), and the catalyst-nanowire contact area. A long incubation time is observed. This analysis allows us to assess the evolution of the diffusion lengths on the substrate and along the nanowire sidewalls, as a function of temperature and deviation from stoichiometric flux.
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Submitted 7 June, 2016; v1 submitted 31 March, 2016;
originally announced March 2016.
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Influence of free carriers on exciton ground states in quantum wells
Authors:
A. A. Klochikhin,
V. P. Kochereshko,
S. Tatarenko
Abstract:
The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well doped with electrons is considered in the framework of the random phase approximation. The effects of the exciton-charge-density interaction and the inelastic scattering processes due to the Hartree-Fock electron-electron exchange interaction are taken into account. The…
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The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well doped with electrons is considered in the framework of the random phase approximation. The effects of the exciton-charge-density interaction and the inelastic scattering processes due to the Hartree-Fock electron-electron exchange interaction are taken into account. The effect of phase-space filling is considered using an approximate approach. The results of the calculation are compared with the experimental data available.
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Submitted 3 December, 2013;
originally announced December 2013.
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Optical properties of single ZnTe nanowires grown at low temperature
Authors:
Alberto Artioli,
Pamela Rueda-Fonseca,
Petr Stepanov,
Edith Bellet-Amalric,
Martien Den Hertog,
Catherine Bougerol,
Yann Genuist,
Fabrice Donatini,
Régis André,
Gilles Nogues,
Kuntheak Kheng,
Serge Tatarenko,
David Ferrand,
Joel Cibert
Abstract:
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> orie…
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Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.
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Submitted 12 June, 2013;
originally announced June 2013.
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Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
Authors:
Martien Den Hertog,
Miryam Elouneg-Jamroz,
Edith Bellet-Amalric,
Samir Bounouar,
Catherine Bougerol,
Régis André,
Yann Genuist,
Jean Philippe Poizat,
Kuntheak Kheng,
Serge Tatarenko
Abstract:
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdS…
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ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.
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Submitted 30 July, 2012;
originally announced July 2012.
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Polarity determination in ZnSe nanowires by HAADF STEM
Authors:
Martien Den Hertog,
Miryam Elouneg-Jamroz,
Edith Bellet-Amalric,
Samir Bounouar,
Catherine Bougerol,
Régis André,
Yann Genuist,
Jean Philippe Poizat,
Kuntheak Kheng,
Serge Tatarenko
Abstract:
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from…
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High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.
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Submitted 20 July, 2012;
originally announced July 2012.
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Subnanosecond spectral diffusion measurement using photon correlation
Authors:
Gregory Sallen,
Adrien Tribu,
Thomas Aichele,
Régis André,
Lucien Besombes,
Catherine Bougerol,
Maxime Richard,
Serge Tatarenko,
Kuntheak Kheng,
Jean-Philippe Poizat
Abstract:
Spectral diffusion is a result of random spectral jumps of a narrow line as a result of a fluctuating environment. It is an important issue in spectroscopy, because the observed spectral broadening prevents access to the intrinsic line properties. However, its characteristic parameters provide local information on the environment of a light emitter embedded in a solid matrix, or moving within a fl…
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Spectral diffusion is a result of random spectral jumps of a narrow line as a result of a fluctuating environment. It is an important issue in spectroscopy, because the observed spectral broadening prevents access to the intrinsic line properties. However, its characteristic parameters provide local information on the environment of a light emitter embedded in a solid matrix, or moving within a fluid, leading to numerous applications in physics and biology. We present a new experimental technique for measuring spectral diffusion based on photon correlations within a spectral line. Autocorrelation on half of the line and cross-correlation between the two halves give a quantitative value of the spectral diffusion time, with a resolution only limited by the correlation set-up. We have measured spectral diffusion of the photoluminescence of a single light emitter with a time resolution of 90 ps, exceeding by four orders of magnitude the best resolution reported to date.
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Submitted 3 July, 2012;
originally announced July 2012.
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Extraction of the homogeneous linewidth of a fast spectrally diffusing line
Authors:
S. Bounouar,
A. Trichet,
M. Elouneg-Jamroz,
R. André,
E. Bellet-Amalric,
C. Bougerol,
M. Den Hertog,
K. Kheng,
S. Tatarenko,
J. -Ph. Poizat
Abstract:
We present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude.…
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We present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude. Using this technique on a CdSe/ZnSe quantum dot, we investigate the temperature dependence of its fast SD amplitude and its homogeneous excitonic linewidth.
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Submitted 22 May, 2012;
originally announced May 2012.
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Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires
Authors:
S. Bounouar,
C. Morchutt,
M. Elouneg-Jamroz,
L. Besombes,
R. André,
E. Bellet-Amalric,
C. Bougerol,
M. Den Hertog,
K. Kheng,
S. Tatarenko,
J. -Ph. Poizat
Abstract:
Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states ($ΔE\in [4, 9.2 ]$ meV) and large spin flip rates between these states. Statistic…
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Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states ($ΔE\in [4, 9.2 ]$ meV) and large spin flip rates between these states. Statistics on many QDs showed that this splitting depends on the QD size. Moreover, we measured an increase of the spin flip rate to the dark states with increasing energy splitting. We explain this observation with a model taking into account the fact that the exciton-phonon interaction depends on the bright to dark exciton energy splitting as well as on the size and shape of the exciton wave function. It also has consequences on the exciton line intensity at high temperature.
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Submitted 23 September, 2011; v1 submitted 16 September, 2011;
originally announced September 2011.
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Subnanosecond spectral diffusion of a single quantum dot in a nanowire
Authors:
G. Sallen,
A. Tribu,
T. Aichele,
R. André,
L. Besombes,
C. Bougerol,
M. Richard,
S. Tatarenko,
K. Kheng,
J. -Ph. Poizat
Abstract:
We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pum** power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a…
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We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pum** power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a \emph{single} carrier wanders around in traps located in the vicinity of the quantum dot.
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Submitted 4 May, 2011;
originally announced May 2011.
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Photon correlation spectroscopy on a single quantum dot embedded in a nanowire
Authors:
Gregory Sallen,
Adrien Tribu,
Thomas Aichele,
Régis André,
Catherine Bougerol,
Serge Tatarenko,
Kuntheak Kheng,
Jean-Philippe Poizat
Abstract:
We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source…
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We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source in the visible. Its particular growth technique opens new possibilities as compared to the usual self-asssembled quantum dots.
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Submitted 4 March, 2009;
originally announced March 2009.
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Dark exciton optical spectroscopy of a semiconducting quantum dot embedded in a nanowire
Authors:
Gregory Sallen,
Adrien Tribu,
Thomas Aichele,
Régis André,
Lucien Besombes,
Catherine Bougerol-Chaillout,
Serge Tatarenko,
Kuntheak Kheng,
Jean-Philippe Poizat
Abstract:
Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $ΔE = 6 $ meV b…
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Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $ΔE = 6 $ meV between the dark and the bright exciton as well as the spin flip rates between these two states.
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Submitted 3 March, 2009;
originally announced March 2009.
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Magnetization dynamics down to zero field in dilute (Cd,Mn)Te quantum wells
Authors:
Mateusz Goryca,
David Ferrand,
Piotr Kossacki,
Michal Nawrocki,
Wojciech Pacuski,
Wiktor Maslana,
Jan A. Gaj,
Serge Tatarenko,
Joel Cibert,
Tomasz Wojtowicz,
Grzegorz Karczewski
Abstract:
The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in absence of magnetic field was found to be up to three orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly v…
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The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in absence of magnetic field was found to be up to three orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly visible: at zero field anisotropic holes stabilize the system of Mn ions, while in a magnetic field of 1 T they are known to speed up the decay by opening an additional relaxation channel.
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Submitted 17 October, 2008;
originally announced October 2008.
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CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K
Authors:
Thomas Aichele,
Adrien Tribu,
Gregory Sallen,
Juanita Bocquel,
Edith Bellet-Amalric,
Catherine Bougerol,
Jean-Philippe Poizat,
Kuntheak Kheng,
Régis André,
Serge Tatarenko
Abstract:
ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For hig…
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ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For higher growth temperature, the nanowires are uniform and have a high aspect ratio with sizes of 1-2 $μ$m in length and 20-50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of a nano-needle allows us to obtain very narrow nanorods with a diameter less than 10 nm and a low density of stacking fault defects. These results allow us the insertion of CdSe quantum dots in a ZnSe nanowire. An effcient photon anti-bunching was observed up to 220 K, demonstrating a high-temperature single-photon source.
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Submitted 17 September, 2008;
originally announced September 2008.
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Defect-free ZnSe nanowire and nano-needle nanostructures
Authors:
Thomas Aichele,
Adrien Tribu,
Catherine Bougerol,
Kuntheak Kheng,
Regis Andre,
Serge Tatarenko
Abstract:
We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission e…
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We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.
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Submitted 8 October, 2008; v1 submitted 13 May, 2008;
originally announced May 2008.
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Microphotoluminescence study of disorder in ferromagnetic (Cd,Mn)Te quantum well
Authors:
W. Maslana,
P. Kossacki,
P. Plochocka,
A. Golnik,
J. A. Gaj,
D. Ferrand,
M. Bertolini,
S. Tatarenko,
J. Cibert
Abstract:
Microphotoluminescence map** experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the low-temperature phase, is measured locally; its fluctuations are compared to those of the spin content and of the carrier density, also measured spectroscopically…
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Microphotoluminescence map** experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the low-temperature phase, is measured locally; its fluctuations are compared to those of the spin content and of the carrier density, also measured spectroscopically in the same run. We show that the fluctuations of the carrier density are the main mechanism responsible for the fluctuations of the spontaneous magnetization in the ferromagnetic phase, while those of the Mn spin density have no detectable effect at this scale of observation.
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Submitted 27 May, 2004; v1 submitted 27 May, 2004;
originally announced May 2004.
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Microwave Magnetoelectric Effects in Single Crystal Bilayers of Yttrium Iron Garnet and Lead Magnesium Niobate-Lead Titanate
Authors:
S. Shastry,
G. Srinivasan,
M. I. Bichurin,
V. M. Petrov,
A. S. Tatarenko
Abstract:
The first observation of microwave magnetoelectric (ME) interactions through ferromagnetic resonance (FMR) in bilayers of single crystal ferromagnetic-piezoelectric oxides and a theoretical model for the effect are presented. An electric field E produces a mechanical deformation in the piezoelectric phase, resulting in a shift dHE in the resonance field for the ferromagnet. The strength of ME co…
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The first observation of microwave magnetoelectric (ME) interactions through ferromagnetic resonance (FMR) in bilayers of single crystal ferromagnetic-piezoelectric oxides and a theoretical model for the effect are presented. An electric field E produces a mechanical deformation in the piezoelectric phase, resulting in a shift dHE in the resonance field for the ferromagnet. The strength of ME coupling is obtained from data on dHE vs E. Studies were performed at 9.3 GHz on bilayers of (111) yttrium iron garnet (YIG) films and (001) lead magnesium niobate-lead titanate (PMN-PT). The samples were positioned outside a TE102-reflection type cavity. Resonance profiles were obtained for E = 0-8 kV/cm for both in-plane and out-of-plane magnetic fields H. Important results are as follows. (i) The ME coupling in the bilayers is an order of magnitude stronger than in polycrystalline composites and is in the range 1-5.4 Oe cm/kOe, depending on the YIG film thickness. (ii) The coupling strength is dependent on the magnetic field orientation and is higher for out-of-plane H than for in-plane H. (iii) Estimated ME constant and its dependence on volume ratio for the two phases are in good agreement with the data.
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Submitted 26 May, 2004;
originally announced May 2004.
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Photoluminescence of p-doped quantum wells with strong spin splitting
Authors:
P. Kossacki,
H. Boukari,
M. Bertolini,
D. Ferrand,
J. Cibert,
S. Tatarenko,
J. A. Gaj,
B. Deveaud,
V. Ciulin,
M. Potemski
Abstract:
The spectroscopic properties of a spin polarized two-dimensional hole gas are studied in modulation doped (Cd,Mn)Te quantum wells. The giant Zeeman effect induces a significant spin splitting even at very small values of the applied field. Several methods of measuring the carrier density (Hall effect, filling factors of the Landau levels at high field, various manifestations of Moss-Burstein shi…
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The spectroscopic properties of a spin polarized two-dimensional hole gas are studied in modulation doped (Cd,Mn)Te quantum wells. The giant Zeeman effect induces a significant spin splitting even at very small values of the applied field. Several methods of measuring the carrier density (Hall effect, filling factors of the Landau levels at high field, various manifestations of Moss-Burstein shifts) are described and calibrated. The value of the spin splitting needed to fully polarize the hole gas, evidences a strong enhancement of the spin susceptibility of the hole gas due to carrier-carrier interaction. At small values of the spin splitting, whatever the carrier density (non zero) is, photoluminescence lines are due to the formation of charged excitons in the singlet state. Spectral shifts in photoluminescence and in transmission (including an "excitonic Moss-Bustein shift") are observed and discussed in terms of excitations of the partially or fully polarized hole gas. At large spin splitting, and without changing the carrier density, the singlet state of the charged exciton is destabilized in favour of a triplet state configuration of holes. The binding energy of the singlet state is thus measured and found to be independent of the carrier density (in contrast with the splitting between the charged exciton and the neutral exciton lines). The state stable at large spin splitting is close to the neutral exciton at low carrier density, and close to an uncorrelated electron-hole pair at the largest values of the carrier density achieved. The triplet state gives rise to a characteristic double-line structure with an indirect transition to the ground state (with a strong phonon replica) and a direct transition to an excited state of the hole gas.
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Submitted 21 April, 2004;
originally announced April 2004.
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Femtosecond study of the interplay between excitons, trions, and carriers in (Cd,Mn)Te quantum wells
Authors:
P. Plochocka,
P. Kossacki,
W. Maslana,
J. Cibert,
S. Tatarenko,
C. Radzewicz,
J. A. Gaj
Abstract:
We present an absorption study of the neutral and positively charged exciton (trion) under the influence of a femtosecond, circularly polarized, resonant pump pulse. Three populations are involved: free holes, excitons, and trions, all exhibiting transient spin polarization. In particular, a polarization of the hole gas is created by the formation of trions. The evolution of these populations is…
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We present an absorption study of the neutral and positively charged exciton (trion) under the influence of a femtosecond, circularly polarized, resonant pump pulse. Three populations are involved: free holes, excitons, and trions, all exhibiting transient spin polarization. In particular, a polarization of the hole gas is created by the formation of trions. The evolution of these populations is studied, including the spin flip and trion formation processes. The contributions of several mechanisms to intensity changes are evaluated, including phase space filling and spin-dependent screening. We propose a new explanation of the oscillator strength stealing phenomena observed in p-doped quantum wells, based on the screening of neutral excitons by charge carriers. We have also found that binding heavy holes into charged excitons excludes them from the interaction with the rest of the system, so that oscillator strength stealing is partially blocked
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Submitted 12 August, 2003;
originally announced August 2003.
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p-Type do** of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells
Authors:
W. Maslana,
M. Bertolini,
H. Boukari,
P. Kossacki,
D. Ferrand,
J. A. Gaj,
S. Tatarenko,
J. Cibert
Abstract:
We present a study of p-type do** of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation do** with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface do** was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed tem…
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We present a study of p-type do** of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation do** with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface do** was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.
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Submitted 4 February, 2003; v1 submitted 10 July, 2002;
originally announced July 2002.
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Light and electric field control of ferromagnetism in magnetic quantum structures
Authors:
H. Boukari,
P. Kossacki,
M. Bertolini,
D. Ferrand,
J. Cibert,
S. Tatarenko,
A. Wasiela,
J. A. Gaj,
T. Dietl
Abstract:
A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic…
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A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid.
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Submitted 21 February, 2002; v1 submitted 27 November, 2001;
originally announced November 2001.
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Carrier-induced ferromagnetism in p-Zn1-xMnxTe
Authors:
D. Ferrand,
J. Cibert,
A. Wasiela,
C. Bourgognon,
S. Tatarenko,
G. Fishman,
T. Andrearczyk,
J. Jaroszynski,
S. Kolesnik,
T. Dietl,
B. Barbara,
D. Dufeu
Abstract:
We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The…
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We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The experimental findings compare favorably, without adjustable parameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (RKKY) model or its continuous-medium limit, that is, the Zener model, provided that the presence of the competing antiferromagnetic spin-spin superexchange interaction is taken into account, and the complex structure of the valence band is properly incorporated into the calculation of the spin susceptibility of the hole liquid. In general terms, the findings demonstrate how the interplay between the ferromagnetic RKKY interaction, carrier localization, and intrinsic antiferromagnetic superexchange affects the ordering temperature and the saturation value of magnetization in magnetically and electrostatically disordered systems.
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Submitted 31 July, 2000;
originally announced July 2000.
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Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers
Authors:
D. Ferrand,
J. Cibert,
C. Bourgognon,
S. Tatarenko,
A. Wasiela,
G. Fishman,
A. Bonanni,
H. Sitter,
S. Kolesnik,
J. Jaroszynski,
A. Barcz,
T. Dietl
Abstract:
p-type do** of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes c…
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p-type do** of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.
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Submitted 8 October, 1999;
originally announced October 1999.
