Showing 1–3 of 3 results for author: Tatarczak, P

Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence

Authors: Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek

Abstract: Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN atomic planes can also arrange in other configurations like Bernal (bBN) or rhombohedral (rBN) stacking orders. Variations in the orientation and translation of… ▽ More Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN atomic planes can also arrange in other configurations like Bernal (bBN) or rhombohedral (rBN) stacking orders. Variations in the orientation and translation of successive atomic layers lead to changes in crystal symmetry, potentially resulting in piezoelectric, pyroelectric or ferroelectric effects. However, distinguishing between different polytypes using conventional methods like X-ray diffraction or Raman spectroscopy presents a significant challenge. In this work, we demonstrate that the optical response of the 4.1 eV defect can serve as an indicator of the polytype. To this end, we study BN samples grown by metalorganic vapor phase epitaxy (MOVPE), which contain different polytypes. The identification of the polytypes was achieved by X-ray diffraction and transmission electron microscopy. Photoluminescence and cathodoluminescence measurements with a high spatial resolution allowed for the deconvolution of the signal into two components from which we can extract a zero-phonon line (ZPL) at 4.096 eV (302.6 nm) for hBN and 4.143 eV (299.2 nm) for rBN. We performed calculations that enable us to identify the defect as a carbon dimer CBCN (C2) and show that the ZPL shift reflects differences in the crystal environment for different polytypes. Furthermore, we demonstrate that different polytypic composition ratios of hBN and rBN can be achieved by MOVPE, which could pave the way for future applications in large-area van der Waals heterostructures. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN

Authors: Jakub Iwański, Mateusz Tokarczyk, Aleksandra K. Dąbrowska, Jan Pawłowski, Piotr Tatarczak, Johannes Binder, Andrzej Wysmołek

Abstract: The versatile range of applications for two-dimensional (2D) materials has encouraged scientists to further engineer the properties of these materials. This is often accomplished by stacking layered materials into more complex van der Waals heterostructures. A much less popular but technologically promising approach is the alloying of 2D materials with different element compositions. In this work,… ▽ More The versatile range of applications for two-dimensional (2D) materials has encouraged scientists to further engineer the properties of these materials. This is often accomplished by stacking layered materials into more complex van der Waals heterostructures. A much less popular but technologically promising approach is the alloying of 2D materials with different element compositions. In this work, we demonstrate a first step in manipulating the hBN bandgap in terms of its width and indirect/direct character of the optical transitions. We present a set of aluminum alloyed hexagonal boron nitride (hBAlN) samples that were grown by metal organic vapor phase epitaxy (MOVPE) on 2-inch sapphire substrates with different aluminum concentration. Importantly, the obtained samples revealed a sp$^2$-bonded crystal structure. Optical absorption experiments disclosed two strong peaks in the excitonic spectral range with absorption coefficient $α\sim 10^6$ cm$^{-1}$. Their energies correspond very well with the energies of indirect and direct bandgap transitions in hBN. However, they are slightly redshifted. This observation is in agreement with predictions that alloying with Al leads to a decrease of the bandgap energy. The observation of two absorption peaks can be explained in terms of mixing electronic states in the K and M conduction band valleys, which leads to a significant enhancement of the absorption coefficient for indirect transitions. △ Less

Submitted 25 May, 2023; originally announced May 2023.

Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

Authors: Jakub Iwański, Piotr Tatarczak, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Johannes Binder, Roman Stępniewski, Andrzej Wysmołek

Abstract: The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by Metal Organic Vapor Phase Epitaxy (MOVPE) using Fourier-transfo… ▽ More The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by Metal Organic Vapor Phase Epitaxy (MOVPE) using Fourier-transform Infrared (FTIR) spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in the $E_{1u}$ phonon energy of up to $\sim6$ cm$^{-1}$ in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp$^2$ boron nitride. △ Less

Submitted 28 April, 2022; v1 submitted 27 April, 2022; originally announced April 2022.