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In-situ Raman spectroscopy analysis of the interfaces between Ni-based SOFC anodes and stabilized zirconia electrolyte
Authors:
D. A. Agarkov,
I. N. Burmistrov,
F. M. Tsybrov,
I. I. Tartakovskii,
V. V. Kharton,
S. I. Bredikhin
Abstract:
A new experimental approach for in-situ Raman spectroscopy of the electrode | solid electrolyte interfaces in controlled atmospheres, based on the use of optically transparent single-crystal membranes of stabilized cubic zirconia, has been proposed and validated. This technique makes it possible to directly access the electrochemical reaction zone in SOFCs by passing the laser beam through single-…
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A new experimental approach for in-situ Raman spectroscopy of the electrode | solid electrolyte interfaces in controlled atmospheres, based on the use of optically transparent single-crystal membranes of stabilized cubic zirconia, has been proposed and validated. This technique makes it possible to directly access the electrochemical reaction zone in SOFCs by passing the laser beam through single-crystal electrolyte onto the interface, in combination with simultaneous electrochemical measurements. The case study centered on the analysis of NiO reduction in standard cermet anodes under open-circuit conditions, demonstrated an excellent agreement between the observed kinetic parameters and literature data on nickel oxide. The porous cermet reduction kinetics at 400-600C in flowing H2-N2 gas mixture can be described by the classical Avrami model, suggesting that the reaction rate is determined by the metal nuclei growth limited by Ni diffusion. The advantages and limitations of the new experimental approach were briefly discussed.
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Submitted 27 July, 2016;
originally announced July 2016.
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Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slab
Authors:
S. V. Lobanov,
S. G. Tikhodeev,
N. A. Gippius,
A. A. Maksimov,
E. V. Filatov,
I. I. Tartakovskii,
V. D. Kulakovskii,
T. Weiss,
C. Schneider,
J. Geßler,
M. Kamp,
S. Höfling
Abstract:
We study the polarization properties of light emitted by quantum dots that are embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the wave\-guide layer has been shown to result in a high circular polarization degree $ρ_c$ of the quantum dot emission in…
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We study the polarization properties of light emitted by quantum dots that are embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the wave\-guide layer has been shown to result in a high circular polarization degree $ρ_c$ of the quantum dot emission in the absence of external magnetic field. The physical nature of the phenomenon can be understood in terms of the reciprocity principle taking into account the structural symmetry. At the resonance wavelength, the magnitude of $|ρ_c|$ is predicted to exceed 98%. The experimentally achieved value of $|ρ_c|=81$% is smaller, which is due to the contribution of unpolarized light scattered by grating defects, thus breaking its periodicity. The achieved polarization degree estimated removing the unpolarized nonresonant background from the emission spectra can be estimated to be as high as 96%, close to the theoretical prediction.
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Submitted 25 September, 2015; v1 submitted 4 September, 2015;
originally announced September 2015.
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Optical investigation of the natural electron do** in thin MoS2 films deposited on dielectric substrates
Authors:
D. Sercombe,
S. Schwarz,
O. Del Pozo-Zamudio,
F. Liu,
B. J. Robinson,
E. A. Chekhovich,
I. I. Tartakovskii,
O. Kolosov,
A. I. Tartakovskii
Abstract:
Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment…
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Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional cap** of MoS2 with SiO2 and SiN, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials.
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Submitted 21 January, 2014; v1 submitted 26 April, 2013;
originally announced April 2013.
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Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures
Authors:
A. A. Maksimov,
D. R. Yakovlev,
J. Debus,
I. I. Tartakovskii,
A. Waag,
G. Karczewski,
T. Wojtowicz,
J. Kossut,
M. Bayer
Abstract:
The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7x10^(-8) cm^2/s h…
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The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7x10^(-8) cm^2/s has been evaluated for Zn(0.99)Mn(0.01)Se from comparison of experimental and numerical results. Calculations of the giant Zeeman splitting of the exciton states and the magnetization dynamics in the ordered alloys and parabolic quantum wells fabricated by the digital growth technique show perfect agreement with the experimental data. In both structure types the spin diffusion has an essential contribution to the magnetization dynamics.
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Submitted 26 May, 2010;
originally announced May 2010.
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Spin-lattice relaxation of Mn-ions in ZnMnSe/ZnBeSe quantum wells measured under pulsed photoexcitation
Authors:
M. K. Kneip,
D. R. Yakovlev,
M. Bayer,
A. A. Maksimov,
I. I. Tartakovskii,
D. Keller,
W. Ossau,
L. W. Molenkamp,
A. Waag
Abstract:
The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from 10-3 down to 10-8 s, when the Mn content increases from 0.4 up to 11%. Free carriers play an important role in this dynamics. Hot carriers with excess kinetic…
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The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from 10-3 down to 10-8 s, when the Mn content increases from 0.4 up to 11%. Free carriers play an important role in this dynamics. Hot carriers with excess kinetic energy contribute to heating of the Mn system, while cooling of the Mn system occurs in the presence of cold background carriers provided by modulation do**. In a Zn0.89Mn0.11Se quantum well structure, where the spin-lattice relaxation process is considerably shorter than the characteristic lifetime of nonequilibrium phonons, also the phonon dynamics and its contribution to heating of the Mn system are investigated.
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Submitted 19 May, 2005;
originally announced May 2005.
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Influence of oxygen ordering kinetics on Raman and optical response in YBa_2Cu_3O_{6.4}
Authors:
A. A. Maksimov,
D. A. Pronin,
S. V. Zaitsev,
I. I. Tartakovskii,
G. Blumberg,
M. V. Klein,
M. Karlow,
S. L. Cooper,
A. P. Paulikas,
B. W. Veal
Abstract:
Kinetics of the optical and Raman response in YBa_2Cu_3O_{6.4} were studied during room temperature annealing following heat treatment. The superconducting T_c, dc resistivity, and low-energy optical conductivity recover slowly, implying a long relaxation time for the carrier density. Short relaxation times are observed for the B_{1g} Raman scattering -- magnetic, continuum, and phonon -- and th…
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Kinetics of the optical and Raman response in YBa_2Cu_3O_{6.4} were studied during room temperature annealing following heat treatment. The superconducting T_c, dc resistivity, and low-energy optical conductivity recover slowly, implying a long relaxation time for the carrier density. Short relaxation times are observed for the B_{1g} Raman scattering -- magnetic, continuum, and phonon -- and the charge transfer band. Monte Carlo simulations suggest that these two relaxation rates are related to two length scales corresponding to local oxygen ordering (fast) and long chain and twin formation (slow).
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Submitted 14 November, 1995;
originally announced November 1995.
