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Map** reaction mechanism during overcharge of a LiNiO2/Graphite-silicon lithium-ion battery: a correlative operando approach by simultaneous gas analysis and synchrotron scattering techniques
Authors:
Quentin Jacquet,
Irina Profatilova,
Loic Baggetto,
Bouthayna Alrifai,
Elisabeth Addes,
Paul Chassagne,
Nils Blanc,
Samuel Tardif,
Lise Daniel,
Sandrine Lyonnard
Abstract:
Li-ion battery degradation processes are multi-scale, heterogeneous, dynamic and involve multiple cell components through cross talk mechanisms. Correlated operando characterization capable of measuring several key parameters are needed to accelerate understanding on these complex degradation processes. In particular, degradation mechanisms during overcharge of LiNiO2/Graphite-Silicon is well know…
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Li-ion battery degradation processes are multi-scale, heterogeneous, dynamic and involve multiple cell components through cross talk mechanisms. Correlated operando characterization capable of measuring several key parameters are needed to accelerate understanding on these complex degradation processes. In particular, degradation mechanisms during overcharge of LiNiO2/Graphite-Silicon is well known at the material level featuring O2 gas release and concomitant surface reconstruction of LiNiO2. However, there are still debates regarding the role of high voltage O1 phase formation on gas production and no information on the effect of produced gases on the cell components (anode or sensors), or effect of overcharge on electrode level behavior. In this work, we simultaneously measured the gas produced using operando mass spectrometry while spatially resolving nanostructure and lattice changes using operando micro SAXS/WAXS map** during the formation and over charge of a LiNiO2/Gr-Si pouch cell. This new correlated operando characterization experiment allowed to (1) confirm the absence of O1 phase even with substantial gas produced at end of charge, (2) unveil the effect of gases on reference and negative electrodes, (3) show that overcharge increases in-plane reaction heterogeneities by creating local degraded spots lagging behind the ensemble electrochemistry. These findings will be important to optimize ageing of devices based on similar chemistries, in particular Ni-rich NMC, while showing the strength of correlated characterization leading to more efficient and robust information on complex mechanisms.
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Submitted 8 May, 2024;
originally announced May 2024.
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Brittle fracture studied by ultra-high speed synchrotron X-ray diffraction imaging
Authors:
Antoine Petit,
Sylvia Pokam,
Frederic Mazen,
Samuel Tardif,
Didier Landru,
Oleg Kononchuk,
Nadia Ben Mohamed,
Margie P. Olbinado,
Alexander Rack,
Francois Rieutord
Abstract:
Ever since the very first human-made knapped tools, the control of fracture propagation in brittle materials has been a vector of technological development. Nowadays, a broad range of applications relies on crack propagation control, from the mitigation of damages, e.g., from impacts in glass screens or windshields, to industrial processes harnessing fracture to achieve clean cuts over large dista…
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Ever since the very first human-made knapped tools, the control of fracture propagation in brittle materials has been a vector of technological development. Nowadays, a broad range of applications relies on crack propagation control, from the mitigation of damages, e.g., from impacts in glass screens or windshields, to industrial processes harnessing fracture to achieve clean cuts over large distances. Yet, studying the fracture in real time is a challenging task, since cracks can propagate up to a few km/s in materials that are often opaque. Here, we report on the in situ investigation of cracks propagating at up to 2.5 km/s along a (001) plane of a silicon single crystal, using X-ray diffraction megahertz imaging with intense and time-structured synchrotron radiation. The studied system is based on the Smart Cut process, where a buried layer in a material (typically Si) is weakened by micro-cracks and then used to drive a macroscopic crack (0.1 m) in a plane parallel to the surface with minimal deviation (1 nm). The results we report here provide the first direct confirmation that the shape of the crack front is not affected by the distribution of the micro-cracks, which had been a postulate for previous studies based on post-fracture results. We further measured instantaneous crack velocities over the centimeter-wide field-of-view, which had only been previously inferred from sparse point measurements, and evidence the effect of local heating by the X-ray beam. Finally, we also observed the post-crack movements of the separated wafer parts, which can be explained using pneumatics and elasticity. Thus, this study provides a comprehensive view of controlled fracture propagation in a crystalline material, paving the way for the in situ measurement of ultra-fast strain field propagation.
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Submitted 12 April, 2022;
originally announced April 2022.
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Contribution of X-ray experiments and modeling to the understanding of the heterogeneous lithiation of graphite electrodes
Authors:
Samuel Tardif,
Nicolas Dufour,
Jean-Francois Colin,
Gérard Gébel,
Manfred Burghammer,
Andreas Johannes,
Sandrine Lyonnard,
Marion Chandesris
Abstract:
Distributions of potential and lithium content inside lithium ion batteries highly affects their performance and durability. An increased heterogeneity of the lithium distribution is expected in thick electrodes with high energy densities or cycling at high currents. To optimize electrodes and cells designs, it is crucial to probe lithium concentration gradients across the depth of the electrode,…
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Distributions of potential and lithium content inside lithium ion batteries highly affects their performance and durability. An increased heterogeneity of the lithium distribution is expected in thick electrodes with high energy densities or cycling at high currents. To optimize electrodes and cells designs, it is crucial to probe lithium concentration gradients across the depth of the electrode, but also to predict their occurrence and magnitude as a function of materials properties. Here, we follow the lithium distribution across a $80~μm$ thick porous graphite electrode using a $1~μm$ focused synchrotron X-ray beam. The sequential formation of the individual Li$_x$C$_6$ phases during lithium de-insertion is extracted from X-ray diffraction patterns, allowing the quantification of lithium concentration across the electrode thickness. Analyzing the evolution of heterogeneities as a function of time, we recover the striking features we predicted with a porous electrode model, including the succession of homogeneous and heterogeneous distributions of lithium. However, a clear difference is obtained at high stoichiometry, with a much more homogeneous distribution than initially predicted. Revisiting the interplay between transport and kinetic transfers limitations in the porous electrode model, we suggest that the kinetics of lithium (de)-insertion is highly reduced during the LiC$_6$/LiC$_{12}$ phase transition.
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Submitted 11 May, 2020;
originally announced May 2020.
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Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
Authors:
K. Guilloy,
N. Pauc,
A. Gassenq,
Y. M. Niquet,
J. M. Escalante,
I. Duchemin,
S. Tardif,
G. Osvaldo Dias,
D. Rouchon,
J. Widiez,
J. M. Hartmann,
R. Geiger,
T. Zabel,
H. Sigg,
J. Faist,
A. Chelnokov,
V. Reboud,
V. Calvo
Abstract:
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 %…
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Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Γ$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium.
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Submitted 24 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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Accurate strain measurements in highly strained Ge microbridges
Authors:
A. Gassenq,
S. Tardif,
K. Guilloy,
G. Osvaldo Dias,
N. Pauc,
I. Duchemin,
D. Rouchon,
J-M. Hartmann,
J. Widiez,
J. Escalante,
Y-M. Niquet,
R. Geiger,
T. Zabel,
H. Sigg,
J. Faist,
A. Chelnokov,
F. Rieutord,
V. Reboud,
V. Calvo
Abstract:
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron b…
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Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression.
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Submitted 15 April, 2016;
originally announced April 2016.
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Lattice strain and tilt map** in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering
Authors:
Samuel Tardif,
Alban Gassenq,
Kevin Guilloy,
Nicolas Pauc,
Guilherme Osvaldo Dias,
Jean-Michel Hartmann,
Julie Widiez,
Thomas Zabel,
Esteban Marin,
Hans Sigg,
Jérôme Faist,
Alexei Chelnokov,
Vincent Reboud,
Vincent Calvo,
Jean-Sébastien Micha,
Odile Robach,
François Rieutord
Abstract:
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mappi…
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Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain map**. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.
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Submitted 24 June, 2016; v1 submitted 21 March, 2016;
originally announced March 2016.
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Uniaxially stressed germanium with fundamental direct band gap
Authors:
R. Geiger,
T. Zabel,
E. Marin,
A. Gassenq,
J. -M. Hartmann,
J. Widiez,
J. Escalante,
K. Guilloy,
N. Pauc,
D. Rouchon,
G. Osvaldo Diaz,
S. Tardif,
F. Rieutord,
I. Duchemin,
Y. -M. Niquet,
V. Reboud,
V. Calvo,
A. Chelnokov,
J. Faist,
H. Sigg
Abstract:
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a…
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We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
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Submitted 10 December, 2015;
originally announced March 2016.
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All-in/all-out magnetic domains: X-ray diffraction imaging and magnetic field control
Authors:
Samuel Tardif,
Soshi Takeshita,
Hiroyuki Ohsumi,
Jun-ichi Yamaura,
Daisuke Okuyama,
Zenji Hiroi,
Masaki Takata,
Taka-hisa Arima
Abstract:
Long-range non-collinear all-in/all-out magnetic order has been directly observed for the first time in real space in the pyrochlore Cd$_2$Os$_2$O$_7$ using resonant magnetic microdiffraction at the Os L$_3$ edge. Two different antiferromagnetic domains related by time-reversal symmetry could be distinguished and have been mapped within the same single crystal. The two types of domains are akin to…
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Long-range non-collinear all-in/all-out magnetic order has been directly observed for the first time in real space in the pyrochlore Cd$_2$Os$_2$O$_7$ using resonant magnetic microdiffraction at the Os L$_3$ edge. Two different antiferromagnetic domains related by time-reversal symmetry could be distinguished and have been mapped within the same single crystal. The two types of domains are akin to magnetic twins and were expected - yet unobserved so far - in the all-in/all-out model. Even though the magnetic domains are antiferromagnetic, we show that their distribution can be controlled using a magnetic field-cooling procedure.
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Submitted 21 July, 2014;
originally announced July 2014.
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The optimal division between sample and background measurement time for photon counting experiments
Authors:
Brian Richard Pauw,
Samuel Tardif
Abstract:
Usually, equal time is given to measuring the background and the sample, or even a longer background measurement is taken as it has so few counts. While this seems the right thing to do, the relative error after background subtraction improves when more time is spent counting the measurement with the highest amount of scattering. As the available measurement time is always limited, a good division…
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Usually, equal time is given to measuring the background and the sample, or even a longer background measurement is taken as it has so few counts. While this seems the right thing to do, the relative error after background subtraction improves when more time is spent counting the measurement with the highest amount of scattering. As the available measurement time is always limited, a good division must be found between measuring the background and sample, so that the uncertainty of the background-subtracted intensity is as low as possible.
Herein outlined is the method to determine how best to divide measurement time between a sample and the background, in order to minimize the relative uncertainty. Also given is the relative reduction in uncertainty to be gained from the considered division. It is particularly useful in the case of scanning diffractometers, including the likes of Bonse-Hart cameras, where the measurement time division for each point can be optimized depending on the signal-to-noise ratio.
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Submitted 19 October, 2012;
originally announced October 2012.
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Improvements and considerations for size distribution retrieval from small-angle scattering data by Monte-Carlo methods
Authors:
Brian Richard Pauw,
Jan-Skov Pedersen,
Samuel Tardif,
Masaki Takata,
Bo Brummersted Iversen
Abstract:
Monte-Carlo (MC) methods, based on random updates and the trial-and-error principle, are well suited to retrieve particle size distributions from small-angle scattering patterns of dilute solutions of scatterers. The size sensitivity of size determination methods in relation to the range of scattering vectors covered by the data is discussed. Improvements are presented to existing MC methods in wh…
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Monte-Carlo (MC) methods, based on random updates and the trial-and-error principle, are well suited to retrieve particle size distributions from small-angle scattering patterns of dilute solutions of scatterers. The size sensitivity of size determination methods in relation to the range of scattering vectors covered by the data is discussed. Improvements are presented to existing MC methods in which the particle shape is assumed to be known. A discussion of the problems with the ambiguous convergence criteria of the MC methods are given and a convergence criterion is proposed, which also allows the determination of uncertainties on the determined size distributions.
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Submitted 18 October, 2012;
originally announced October 2012.
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X-ray magnetic circular dichroism in (Ge,Mn) compounds: experiments and modeling
Authors:
Samuel Tardif,
Andrey Titov,
Emmanuel Arras,
Ivetta Slipukhina,
El-Kebir Hlil,
Salia Cherifi,
Yves Joly,
Matthieu Jamet,
André Barski,
Joel Cibert,
Erkin Kulatov,
Y. A. Uspenskii,
Pascal Pochet
Abstract:
X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early \textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of…
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X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L$_{2,3}$ edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early \textit{ab initio} studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of sign in the L$_{3}$ XMCD spectrum of Mn in Ge$_3$Mn$_5$, which is observed in experiments. In this work we demonstrate that this disagreement is partially related to an underestimation of the exchange splitting of Mn 2$p$ core states within the local density approximation. It is shown that the change in sign experimentally observed is reproduced if the exchange splitting is accurately calculated within the Hartree-Fock approximation, while the final states can be still described by the DFT. This approach is further used to calculate the XMCD in different (Ge,Mn) compounds. It demonstrates that the agreement between experimental and theoretical spectra can be improved by combining state of the art calculations for the core and valence states respectively.
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Submitted 17 October, 2013; v1 submitted 6 October, 2012;
originally announced October 2012.
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Interface-driven phase separation in multifunctional materials: the case of GeMn ferromagnetic semiconductor
Authors:
Emmanuel Arras,
Frédéric Lançon,
Ivetta Slipukhina,
Éric Prestat,
Mauro Rovezzi,
Samuel Tardif,
Andrey Titov,
Pascale Bayle-Guillemaud,
Francesco D'Acapito,
André Barski,
Vincent Favre-Nicolin,
Matthieu Jamet,
Joël Cibert,
Pascal Pochet
Abstract:
We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $α$ phases, is proposed to understand the…
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We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-saturated AlCu alloys, and replace the Guinier-Preston zones in this new context. A new class of materials, the $α$ phases, is proposed to understand the formation of the coherent precipitates observed in the GeMn system. The interplay between formation and interface energies is analyzed for these phases and for the structures usually considered in the literature. The existence of the alpha phases is assessed with both theoretical and experimental arguments.
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Submitted 23 March, 2012; v1 submitted 12 March, 2012;
originally announced March 2012.
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Exchange bias in GeMn nanocolumns: the role of surface oxidation
Authors:
S. Tardif,
S. Cherifi,
M. Jamet,
T. Devillers,
A. Barski,
D. Schmitz,
N. Darowski,
P. Thakur,
J. C. Cezar,
N. B. Brookes,
R. Mattana,
J. Cibert
Abstract:
We report on the exchange biasing of self-assembled ferromagnetic GeMn nanocolumns by GeMn-oxide caps. The x-ray absorption spectroscopy analysis of this surface oxide shows a multiplet fine structure that is typical of the Mn2+ valence state in MnO. A magnetization hysteresis shift |HE|~100 Oe and a coercivity enhancement of about 70 Oe have been obtained upon cooling (300-5 K) in a magnetic fiel…
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We report on the exchange biasing of self-assembled ferromagnetic GeMn nanocolumns by GeMn-oxide caps. The x-ray absorption spectroscopy analysis of this surface oxide shows a multiplet fine structure that is typical of the Mn2+ valence state in MnO. A magnetization hysteresis shift |HE|~100 Oe and a coercivity enhancement of about 70 Oe have been obtained upon cooling (300-5 K) in a magnetic field as low as 0.25 T. This exchange bias is attributed to the interface coupling between the ferromagnetic nanocolumns and the antiferromagnetic MnO-like caps. The effect enhancement is achieved by depositing a MnO layer on the GeMn nanocolumns.
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Submitted 17 August, 2010;
originally announced August 2010.
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Strain and correlation of self-organized Ge_(1-x)Mn_x nanocolumns embedded in Ge (001)
Authors:
S. Tardif,
V. Favre-Nicolin,
F. Lançon,
E. Arras,
M. Jamet,
A. Barski,
C. Porret,
P. Bayle-Guillemaud,
P. Pochet,
T. Devillers,
M. Rovezzi
Abstract:
We report on the structural properties of Ge_(1-x)Mn_x layers grown by molecular beam epitaxy. In these layers, nanocolumns with a high Mn content are embedded in an almost-pure Ge matrix. We have used grazing-incidence X-ray scattering, atomic force and transmission electron microscopy to study the structural properties of the columns. We demonstrate how the elastic deformation of the matrix (as…
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We report on the structural properties of Ge_(1-x)Mn_x layers grown by molecular beam epitaxy. In these layers, nanocolumns with a high Mn content are embedded in an almost-pure Ge matrix. We have used grazing-incidence X-ray scattering, atomic force and transmission electron microscopy to study the structural properties of the columns. We demonstrate how the elastic deformation of the matrix (as calculated using atomistic simulations) around the columns, as well as the average inter-column distance can account for the shape of the diffusion around Bragg peaks.
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Submitted 23 August, 2010; v1 submitted 26 May, 2010;
originally announced June 2010.
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From diluted magnetic semiconductors to self-organized nanocolumns of GeMn in Germanium
Authors:
Samuel Tardif,
Ing-Song Yu,
Thibault Devillers,
Mathieu Jamet,
Salia Cherifi,
Joel Cibert,
André Barski,
Pascale Bayle-Guillemaud,
Edith Bellet-Amalric
Abstract:
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors remains a challenge in the case of well controlled homogeneous alloys, several systems characterized by a strongly inhomogeneous incorporation of the magnetic component appear as promising. Incorporation of manganese into germanium drastically alters the growth conditions, and in certain condition…
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While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors remains a challenge in the case of well controlled homogeneous alloys, several systems characterized by a strongly inhomogeneous incorporation of the magnetic component appear as promising. Incorporation of manganese into germanium drastically alters the growth conditions, and in certain conditions of low temperature Molecular Beam Epitaxy it leads to the formation of well organized nanocolumns of a Mn-rich material, with a crystalline structure in epitaxial relationship with the Mn-poor germanium matrix. A strong interaction between the Mn atoms in these nanocolums is demonstrated by x-ray absorption spectroscopy, giving rise to a ferromagnetic character as observed through magnetometry and x-ray magnetic circular dichroism. Most interesting, intense magneto-transport features are observed on the whole structure, which strongly depend on the magnetic configuration of the nanocolumns.
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Submitted 30 August, 2008;
originally announced September 2008.
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Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism
Authors:
P. R. Stone,
K. Alberi,
S. K. Z. Tardif,
J. W. Beeman,
K. M. Yu,
W. Walukiewicz,
O. D. Dubon
Abstract:
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn do** of x=0.046 while the replacement of 0.4 % As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario i…
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We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn do** of x=0.046 while the replacement of 0.4 % As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 % P (1% N) into the As sublattice.
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Submitted 23 July, 2008;
originally announced July 2008.