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Magnon Valves Based on YIG/NiO/YIG All-Insulating Magnon Junctions
Authors:
C. Y. Guo,
C. H. Wan,
X. Wang,
C. Fang,
P. Tang,
W. J. Kong,
M. K. Zhao,
L. N. Jiang,
B. S. Tao,
G. Q. Yu,
X. F. Han
Abstract:
As an alternative angular momentum carrier, magnons or spin waves can be utilized to encode information and breed magnon-based circuits with ultralow power consumption and non-Boolean data processing capability. In order to construct such a circuit, it is indispensable to design some electronic components with both long magnon decay and coherence length and effective control over magnon transport.…
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As an alternative angular momentum carrier, magnons or spin waves can be utilized to encode information and breed magnon-based circuits with ultralow power consumption and non-Boolean data processing capability. In order to construct such a circuit, it is indispensable to design some electronic components with both long magnon decay and coherence length and effective control over magnon transport. Here we show that an all-insulating magnon junctions composed by a magnetic insulator (MI1)/antiferromagnetic insulator (AFI)/magnetic insulator (MI2) sandwich (Y3Fe5O12/NiO/Y3Fe5O12) can completely turn a thermogradient-induced magnon current on or off as the two Y3Fe5O12 layers are aligned parallel or anti-parallel. The magnon decay length in NiO is about 3.5~4.5 nm between 100 K and 200 K for thermally activated magnons. The insulating magnon valve (magnon junction), as a basic building block, possibly shed light on the naissance of efficient magnon-based circuits, including non-Boolean logic, memory, diode, transistors, magnon waveguide and switches with sizable on-off ratios.
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Submitted 30 September, 2018;
originally announced October 2018.
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Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
Authors:
F. Cadiz,
A. Djeffal,
D. Lagarde,
A. Balocchi,
B. S. Tao,
B. Xu,
S. H. Liang,
M. Stoffel,
X. Devaux,
H. Jaffres,
J. M. George,
M. Hehn,
S. Mangin,
H. Carrere,
X. Marie,
T. Amand,
X. F. Han,
Z. G. Wang,
B. Urbaszek,
Y. Lu,
P. Renucci
Abstract:
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi…
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The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.
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Submitted 12 March, 2018;
originally announced March 2018.
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Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance
Authors:
C. Fang,
C. H. Wan,
X. M. Liu,
B. S. Yang,
J. Y. Qin,
B. S. Tao,
H. Wu,
X. Zhang,
Z. M. **,
A. Hoffmann,
X. F. Han
Abstract:
In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is often dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical for determining the spin relaxation time ($τ_s$). Here, we show that this obstacle for measurements of $τ_s$ can be overcome by 2nd harmonic spin-injec…
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In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is often dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical for determining the spin relaxation time ($τ_s$). Here, we show that this obstacle for measurements of $τ_s$ can be overcome by 2nd harmonic spin-injection-magnetoresistance (SIMR). In the 2nd harmonic signal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-induced SIMR as a powerful tool to directly determine $τ_s$. Using this approach we determined the spin relaxation time of Pt and Ta and their temperature dependences. The spin relaxation in Pt seems to be governed by Elliott-Yafet mechanism due to a constant resistivity $\times$spin relaxation time product over a wide temperature range.
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Submitted 8 May, 2017;
originally announced May 2017.
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Long range phase coherencein double barrier magnetic tunnel junctions with large thick metallic quantum well
Authors:
B. S. Tao,
H. X. Yang,
Y. L. Zuo,
X. Devaux,
G. Lengaigne,
M. Hehn,
D. Lacour,
S. Andrieu,
M. Chshiev,
T. Hauet,
F. Montaigne,
S. Mangin,
X. F. Han,
Y. Lu
Abstract:
Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperatu…
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Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlOxbarrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlOx interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications.
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Submitted 2 September, 2015;
originally announced April 2016.
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Spin transport in molybdenum disulfide multilayer channel
Authors:
S. H. Liang,
Y. Lu,
B. S. Tao,
S. Mc-Murtry,
G. Wang,
X. Marie,
P. Renucci,
H. Jaffrès,
F. Montaigne,
D. Lacour,
J. -M. George,
S. Petit-Watelot,
M. Hehn,
A. Djeffal,
S. Mangin
Abstract:
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% h…
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Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hop** via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
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Submitted 15 December, 2015;
originally announced December 2015.
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Giant Magneto-Seebeck Effect in Spin Valves
Authors:
X. M. Zhang,
C. H. Wan,
Z. H. Yuan,
H. Wu,
Q. T. Zhang,
X. Zhang,
B. S. Tao,
C. Fang,
X. F. Han
Abstract:
Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in fe…
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Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in ferromagnetic materials and subsequent modulation of the spin current by spin configurations in spin valves. Simple Mott two-channel model reproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The GMS effect could be applied simultaneously sensing temperature gradient and magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and Seebeck coefficient in ferromagnetic thin films.
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Submitted 11 June, 2015;
originally announced June 2015.
