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Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface
Authors:
Tomohiro Kikuta,
Sachio Komori,
Keiichiro Imura,
Tomoyasu Taniyama
Abstract:
In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change of the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching (the SSV effect) is based on the interplay between superconductivity and magnetism. Fast and large resistive switching associated with the Tc-switching is suitable for nonvolatile c…
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In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change of the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching (the SSV effect) is based on the interplay between superconductivity and magnetism. Fast and large resistive switching associated with the Tc-switching is suitable for nonvolatile cryogenic memory applications. However, external magnetic field-based operation of SSVs is hindering their miniaturization, and therefore, electric field control of the SSV effect is desired. Here, we report epitaxial growth of a La0.67Ca0.33MnO3/YBa2Cu3O7/La0.67Ca0.33MnO3 SSV on a piezo-electric [Pb(Mg0.33Nb0.67)O3]0.7-[PbTiO3]0.3 (001) substrate and demonstrate electric field control of the SSV effect. Electric field-induced strain-transfer from the piezo-electric substrate increases the magnetization and Tc of the SSV, and leads to an enhancement of the magnitude of Tc-switching. The results are promising for the development of magnetic-field-free superconducting spintronic devices, in which the S/F interaction is not only sensitive to the magnetization alignment but also to an applied electric field.
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Submitted 29 March, 2024;
originally announced March 2024.
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Exploring $\rm Mg^{2+}$ and $\rm Ca^{2+}$ Conductors Via Solid-State Metathesis Reactions
Authors:
Titus Masese,
Godwill Mbiti Kanyolo,
Yoshinobu Miyazaki,
Shintaro Tachibana,
Sachio Komori,
Tomoyasu Taniyama,
Yuki Orikasa,
Tomohiro Saito
Abstract:
Magnesium and calcium batteries offer promising energy storage solutions characterised by cost-effectiveness, safety, and high energy density. However, the scarcity of viable electrode and electrolyte materials vastly hinders their advancement. This study utilises solid-state metathetical reactions involving predominantly chalcogen- and pnictogen-based honeycomb layered oxides with alkaline-earth…
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Magnesium and calcium batteries offer promising energy storage solutions characterised by cost-effectiveness, safety, and high energy density. However, the scarcity of viable electrode and electrolyte materials vastly hinders their advancement. This study utilises solid-state metathetical reactions involving predominantly chalcogen- and pnictogen-based honeycomb layered oxides with alkaline-earth halides/nitrates to synthesise $\rm Mg^{2+}$- and $\rm Ca^{2+}$-based materials previously achievable only under high-temperature/high-pressure conditions, as well as new metastable materials with unique crystal versatility. Particularly, we employ metathetical reactions involving $\rm Li_4MgTeO_6$, $\rm Na_2Mg_2TeO_6$, and $\rm Na_4MgTeO_6$ with $\rm MgCl_2$\,/\,$\rm Mg(NO_3)_2$ or $\rm Ca(NO_3)_2$ at temperatures not exceeding 500 $^\circ$C to produce $\rm Mg_3TeO_6$ polymorphs, ilmenite-type $\rm CaMg_2TeO_6$\,/\,$\rm Mg_2CaTeO_6$, and double perovskite $\rm Ca_2MgTeO_6$. Thus, we demonstrate that these materials, conventionally requiring gigascale pressures and high temperatures (>1000$^\circ$C) for their proper synthesis, are now readily accessible at ambient pressure and considerably lower temperatures. Meanwhile, despite sub-optimal pellet densities, the synthesised ilmenite-type $\rm Mg_3TeO_6$ and double perovskite ${\rm Ca}_2M{\rm TeO_6}$ ($M = \rm Mg, Ca, Zn$)} materials exhibit remarkable bulk ionic conductivity at room temperature, marking them as promising compositional spaces for exploring novel $\rm Mg^{2+}$ and $\rm Ca^{2+}$ conductors. Furthermore, this study extends the applicability of metathetical reactions to attain Mg- or Ca-based bismuthates, antimonates, ruthenates, tungstates, titanates, phosphates, and silicates, thus opening avenues to novel high-entropy multifunctional nanomaterial platforms with utility in energy storage and beyond.
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Submitted 4 March, 2024; v1 submitted 25 January, 2024;
originally announced February 2024.
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Spin current driven by ultrafast magnetization of FeRh
Authors:
Kyuhwe Kang,
Hiroki Omura,
Oukjae Lee,
Kyung-** Lee,
Hyun-Woo Lee,
Tomoyasu Taniyama,
Gyung-Min Choi
Abstract:
Laser-induced ultrafast demagnetization is an important phenomenon that probes arguably ultimate limits of the angular momentum dynamics in solid. Unfortunately, many aspects of the dynamics remain unclear except that the demagnetization transfers the angular momentum eventually to the lattice. In particular, roles of electron-carried spin current are debated. Here we experimentally probe the spin…
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Laser-induced ultrafast demagnetization is an important phenomenon that probes arguably ultimate limits of the angular momentum dynamics in solid. Unfortunately, many aspects of the dynamics remain unclear except that the demagnetization transfers the angular momentum eventually to the lattice. In particular, roles of electron-carried spin current are debated. Here we experimentally probe the spin current in the opposite phenomenon, i.e., laser-induced ultrafast magnetization of FeRh, where the laser pump pulse initiates the angular momentum build-up rather than its dissipation. Using the time-resolved magneto-optical Kerr effect, we directly measure the ultrafast-magnetization-driven spin current in a FeRh/Cu heterostructure. Strong correlation between the spin current and the net magnetization change rate of FeRh is found even though the spin filter effect is negligible in this opposite process. This result implies that the angular momentum build-up is achieved by an angular momentum transfer from the electron bath (supplier) to the magnon bath (receiver) and followed by the spatial transport of angular momentum (spin current) and dissipation of angular momentum to the phonon bath (spin relaxation).
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Submitted 21 September, 2022;
originally announced September 2022.
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Strain-Induced Reversible Manipulation of Orbital Magnetic Moments in Ni/Cu Multilayers on Ferroelectric BaTiO3
Authors:
Jun Okabayashi,
Yoshio Miura,
Tomoyasu Taniyama
Abstract:
Controlling magnetic anisotropy by orbital magnetic moments related to interfacial strains has considerable potential for the development of future devices using spins and orbitals. For the fundamental physics, the relationship between strain and orbital magnetic moment is still unknown, because there are few tools to probe changes of orbital magnetic moment. In this study, we developed an electri…
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Controlling magnetic anisotropy by orbital magnetic moments related to interfacial strains has considerable potential for the development of future devices using spins and orbitals. For the fundamental physics, the relationship between strain and orbital magnetic moment is still unknown, because there are few tools to probe changes of orbital magnetic moment. In this study, we developed an electric-field- (E)-induced X-ray magnetic circular dichroism (EXMCD) technique to apply E to a ferroelectric BaTiO3 substrate. We reversibly tuned the interfacial lattice constants of Ni/Cu multilayers on BaTiO3 using this technique. As the domain structures in BaTiO3 are modulated by E, EXMCD measurements reveal that the changes in the magnetic anisotropy of Ni/Cu films are induced through the modulation of orbital magnetic moments in Ni with magneto-elastic contributions. The strained Ni layer that induces the perpendicular magnetic anisotropy without E is released at E = 8 kV/cm, and in-plane magnetization also occurs. We observed that EXMCD measurements clarified the origin of the reversible changes in perpendicular magnetic anisotropy and established the relationship between macroscopic inverse magnetostriction effects and microscopic orbital moment anisotropy.
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Submitted 22 April, 2019;
originally announced April 2019.
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Electric-field-driven domain wall dynamics in perpendicularly magnetized multilayers
Authors:
Diego López González,
Yasuhiro Shirahata,
Ben Van de Wiele,
Kévin J. A. Franke,
Arianna Casiraghi,
Tomoyasu Taniyama,
Sebastiaan van Dijken
Abstract:
We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO$_3$ substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO$_3$ substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Wall…
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We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO$_3$ substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO$_3$ substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Walls that separate magnetic domains are elastically pinned onto ferroelectric domain walls. Using magneto-optical Kerr effect microscopy, we demonstrate that out-of-plane electric field pulses across the BaTiO$_3$ substrate move the magnetic and ferroelectric domain walls in unison. Our experiments indicate an exponential increase of domain wall velocity with electric field strength and opposite domain wall motion for positive and negative field pulses. Magnetic fields do not affect the velocity of magnetic domain walls, but independently tailor their internal spin structure, causing a change in domain wall dynamics at high velocities.
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Submitted 12 February, 2017;
originally announced February 2017.
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Transmission of spin waves in ordered FeRh epitaxial thin films
Authors:
Takamasa Usami,
Ippei Suzuki,
Mitsuru Itoh,
Tomoyasu Taniyama
Abstract:
We report on B2-ordering dependence of magnetostatic surface spin waves in ferromagnetic FeRh at room temperature. Spin waves transmit over a distance longer than 21 μm in highly ordered FeRh alloys even with relatively large spin-orbit interaction. The long-range transmission likely arises from the induced Rh moments of the ordered FeRh due to ferromagnetic exchange interaction between Fe and Rh.…
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We report on B2-ordering dependence of magnetostatic surface spin waves in ferromagnetic FeRh at room temperature. Spin waves transmit over a distance longer than 21 μm in highly ordered FeRh alloys even with relatively large spin-orbit interaction. The long-range transmission likely arises from the induced Rh moments of the ordered FeRh due to ferromagnetic exchange interaction between Fe and Rh. The results indicate a potential of using FeRh in spintronic and magnonic applications by integrating with other fascinating magnetic characteristics of FeRh such as electric field induced magnetic phase transition.
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Submitted 12 May, 2016;
originally announced May 2016.
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Direct Evidence for Suppression of the Kondo Effect due to Pure Spin Current
Authors:
K. Hamaya,
T. Kurokawa,
S. Oki,
S. Yamada,
T. Kanashima,
T. Taniyama
Abstract:
We study the effect of a pure spin current on the Kondo singlet in a diluted magnetic alloy using non-local lateral spin valve structures with highly spin polarized Co2FeSi electrodes. Temperature dependence of the non-local spin signals shows a sharp reduction with decreasing temperature, followed by a plateau corresponding to the low temperature Fermi liquid regime below the Kondo temperature (T…
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We study the effect of a pure spin current on the Kondo singlet in a diluted magnetic alloy using non-local lateral spin valve structures with highly spin polarized Co2FeSi electrodes. Temperature dependence of the non-local spin signals shows a sharp reduction with decreasing temperature, followed by a plateau corresponding to the low temperature Fermi liquid regime below the Kondo temperature (TK). The spin diffusion length of the Kondo alloy is found to increase with the evolution of spin accumulation. The results are in agreement with the intuitive description that the Kondo singlet cannot survive any more in sufficiently large spin accumulation even below TK.
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Submitted 28 March, 2016;
originally announced March 2016.
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Room temperature write-read operations in antiferromagnetic memory
Authors:
Takahiro Moriyama,
Noriko Matsuzaki,
Kab-** Kim,
Ippei Suzuki,
Tomoyasu Taniyama,
Teruo Ono
Abstract:
B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Néel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demons…
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B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Néel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only. Our demonstration of writing and reading at ambient room temperature opens a realistic pathway towards operational antiferromagnetic memory devices.
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Submitted 22 July, 2015;
originally announced July 2015.
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Reversible Electric-Field Driven Magnetic Domain Wall Motion
Authors:
Kévin J. A. Franke,
Ben Van de Wiele,
Yasuhiro Shirahata,
Sampo J. Hämäläinen,
Tomoyasu Taniyama,
Sebastiaan van Dijken
Abstract:
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic c…
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Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic coupling between magnetic and ferroelectric domain walls in multiferroic heterostructures. Pure electric-field driven magnetic domain wall motion is demonstrated for epitaxial Fe films on BaTiO$_3$ with in-plane and out-of-plane polarized domains. In this system, magnetic domain wall motion is fully reversible and the velocity of the walls varies exponentially as a function of out-of-plane electric field strength.
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Submitted 25 November, 2014;
originally announced November 2014.
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Alternating domains with uniaxial and biaxial magnetic anisotropy in epitaxial Fe films on BaTiO3
Authors:
Tuomas H. E. Lahtinen,
Yasuhiro Shirahata,
Lide Yao,
Kévin J. A. Franke,
Gorige Venkataiah,
Tomoyasu Taniyama,
Sebastiaan van Dijken
Abstract:
We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastic a-c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane polarization, whereas the in-plane lattice elongation of a domains induces uniaxial magnetoelastic anisotropy via inverse magnetostriction. The strong modulation…
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We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastic a-c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane polarization, whereas the in-plane lattice elongation of a domains induces uniaxial magnetoelastic anisotropy via inverse magnetostriction. The strong modulation of magnetic anisotropy symmetry results in full imprinting of the a-c domain pattern in the Fe films. Exchange and magnetostatic interactions between neighboring magnetic stripes further influence magnetization reversal and pattern formation within the a and c domains.
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Submitted 7 January, 2013; v1 submitted 24 October, 2012;
originally announced October 2012.
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Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot
Authors:
R. Brunner,
Y. -S. Shin,
T. Obata,
M. Pioro-Ladrière,
T. Kubo,
K. Yoshida,
T. Taniyama,
Y. Tokura,
S. Tarucha
Abstract:
A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We fi…
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A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple qubit gates.
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Submitted 15 September, 2011;
originally announced September 2011.
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Ferroelectricity of Li-doped silver niobate (Ag,Li)NbO3
Authors:
Desheng Fu,
Makoto Endo,
Hiroki Taniguchi,
Tomoyasu Taniyama,
Mitsuru Itoh,
Shin-ya Koshihara
Abstract:
Phase evolution in (Ag1-xLix)NbO3 (ALN) solid solution was investigated by X-ray diffraction technique, dielectric and polarization measurements. It is shown that small substitution of Ag with Li gives rise to an orthorhombic-rhombohedral structural transformation in ABO3-perovskite silver niobate at room temperature. Structural refinements indicate that both A- and B-site displacements contribute…
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Phase evolution in (Ag1-xLix)NbO3 (ALN) solid solution was investigated by X-ray diffraction technique, dielectric and polarization measurements. It is shown that small substitution of Ag with Li gives rise to an orthorhombic-rhombohedral structural transformation in ABO3-perovskite silver niobate at room temperature. Structural refinements indicate that both A- and B-site displacements contribute to the spontaneous polarization of the ferroelectric phase with symmetry R3c. Increasing Li-concentration enhances the ferroelectric rhombohedral distortion, resulting in the increase of the para-ferroelectric phase transition temperature and the polarization of the solid solutions.
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Submitted 22 February, 2011;
originally announced February 2011.
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Coherent Manipulation of Individual Electron Spin in a Double Quantum Dot Integrated with a Micro-Magnet
Authors:
Toshiaki Obata,
Michel Pioro-Ladriere,
Yasuhiro Tokura,
Yun-Sok Shin,
Toshihiro Kubo,
Katsuharu Yoshida,
Tomoyasu Taniyama,
Seigo Tarucha
Abstract:
We report the coherent manipulation of electron spins in a double quantum dot integrated with a micro-magnet. We performed electric dipole spin resonance experiments in the continuous wave (CW) and pump-and-probe modes. We observed two resonant CW peaks and two Rabi oscillations of the quantum dot current by swee** an external magnetic field at a fixed frequency. Two peaks and oscillations are…
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We report the coherent manipulation of electron spins in a double quantum dot integrated with a micro-magnet. We performed electric dipole spin resonance experiments in the continuous wave (CW) and pump-and-probe modes. We observed two resonant CW peaks and two Rabi oscillations of the quantum dot current by swee** an external magnetic field at a fixed frequency. Two peaks and oscillations are measured at different resonant magnetic field, which reflects the fact that the local magnetic fields at each quantum dot are modulated by the stray field of a micro-magnet. As predicted with a density matrix approach, the CW current is quadratic with respect to microwave (MW) voltage while the Rabi frequency (ν_Rabi) is linear. The difference between the ν_Rabi values of two Rabi oscillations directly reflects the MW electric field across the two dots. These results show that the spins on each dot can be manipulated coherently at will by tuning the micro-magnet alignment and MW electric field.
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Submitted 3 February, 2010;
originally announced February 2010.
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Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure
Authors:
K. Hamaya,
M. Kitabatake,
K. Shibata,
M. Jung,
S. Ishida,
T. Taniyama,
K. Hirakawa,
Y. Arakawa,
T. Machida
Abstract:
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tu…
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We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.
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Submitted 24 June, 2009; v1 submitted 16 May, 2009;
originally announced May 2009.
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Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)
Authors:
K. Hamaya,
H. Itoh,
O. Nakatsuka,
K. Ueda,
K. Yamamoto,
M. Itakura,
T. Taniyama,
T. Ono,
M. Miyao
Abstract:
For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6…
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For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe_3-xMn_xSi alloys become half-metallic for 0.75 < x < 1.5. We discuss the possibility of room-temperature ferromagnetic Fe_3-xMn_xSi/Ge epilayers with high spin polarization.
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Submitted 16 April, 2009;
originally announced April 2009.
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Longitudinal SDW order in a quasi-1D Ising-like quantum antiferromagnet
Authors:
S. Kimura,
M. Matsuda,
T. Masuda,
S. Hondo,
K. Kaneko,
N. Metoki,
M. Hagiwara,
T. Takeuchi,
K. Okunishi,
Z. He,
K. Kindo,
T. Taniyama,
M. Itoh
Abstract:
From neutron diffraction measurements on a quasi-1D Ising-like Co$^{\rm 2+}$ spin compound BaCo$_{\rm 2}$V$_{\rm 2}$O$_{\rm 8}$, we observed an appearance of a novel type of incommensurate ordering in magnetic fields. This ordering is essentially different from the N{\' e}el-type ordering, which is expected for the classical system, and is caused by quantum fluctuation inherent in the quantum sp…
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From neutron diffraction measurements on a quasi-1D Ising-like Co$^{\rm 2+}$ spin compound BaCo$_{\rm 2}$V$_{\rm 2}$O$_{\rm 8}$, we observed an appearance of a novel type of incommensurate ordering in magnetic fields. This ordering is essentially different from the N{\' e}el-type ordering, which is expected for the classical system, and is caused by quantum fluctuation inherent in the quantum spin chain. A Tomonaga-Luttinger liquid (TLL) nature characteristic of the gapless quantum 1D system is responsible for the realization of the incommensurate ordering.
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Submitted 29 August, 2008;
originally announced August 2008.
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Electrically driven single electron spin resonance in a slanting Zeeman field
Authors:
M. Pioro-Ladriere,
T. Obata,
Y. Tokura,
Y. -S. Shin,
T. Kubo,
K. Yoshida,
T. Taniyama,
S. Tarucha
Abstract:
The rapidly rising fields of spintronics and quantum information science have led to a strong interest in develo** the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins.…
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The rapidly rising fields of spintronics and quantum information science have led to a strong interest in develo** the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins. In contrast, by mixing the spin and charge degrees of freedom in a controlled way through engineered non-uniform magnetic fields, electron spin can be manipulated electrically without the need of high-frequency magnetic fields. Here we realize electrically-driven addressable spin rotations on two individual electrons by integrating a micron-size ferromagnet to a double quantum dot device. We find that the electrical control and spin selectivity is enabled by the micro-magnet's stray magnetic field which can be tailored to multi-dots architecture. Our results demonstrate the feasibility of manipulating electron spins electrically in a scalable way.
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Submitted 7 May, 2008;
originally announced May 2008.
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Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes
Authors:
K. Hamaya,
M. Kitabatake,
K. Shibata,
M. Jung,
M. Kawamura,
K. Hirakawa,
T. Machida,
T. Taniyama,
S. Ishida,
Y. Arakawa
Abstract:
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gr…
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Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.
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Submitted 15 December, 2007; v1 submitted 14 November, 2007;
originally announced November 2007.
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Novel ordering of an S = 1/2 quasi one-dimensional Ising-like anitiferromagnet in magnetic field
Authors:
S. Kimura,
T. Takeuchi,
K. Okunishi,
M. Hagiwara,
Z. He,
K. Kindo,
T. Taniyama,
M. Itoh
Abstract:
High-field specific heat measurements on BaCo2V2O8, which is a good realization of an S = 1/2 quasi one-dimensional Ising-like antifferomagnet, have been performed in magnetic fields up to 12 T along the chain and at temperature down to 200 mK. We have found a new magnetic ordered state in the field-induced phase above Hc ~ 3.9 T. We suggest that a novel type of the incommensurate order, which h…
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High-field specific heat measurements on BaCo2V2O8, which is a good realization of an S = 1/2 quasi one-dimensional Ising-like antifferomagnet, have been performed in magnetic fields up to 12 T along the chain and at temperature down to 200 mK. We have found a new magnetic ordered state in the field-induced phase above Hc ~ 3.9 T. We suggest that a novel type of the incommensurate order, which has no correspondence to the classical spin system, is realized in the field-induced phase.
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Submitted 25 July, 2007;
originally announced July 2007.
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Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
Authors:
K. Hamaya,
S. Masubuchi,
M. Kawamura,
T. Machida,
M. Jung,
K. Shibata,
K. Hirakawa,
T. Taniyama,
S. Ishida,
Y. Arakawa
Abstract:
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
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Submitted 1 February, 2007; v1 submitted 9 November, 2006;
originally announced November 2006.
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Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations
Authors:
K. Hamaya,
T. Taniyama,
Y. Yamazaki
Abstract:
We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 10^20 cm^-3 and 10^21 cm^-3 as the magnetization rotates from the out-of-plane saturation to the in-…
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We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 10^20 cm^-3 and 10^21 cm^-3 as the magnetization rotates from the out-of-plane saturation to the in-plane remanence. Magnetization switching process from the in-plane remanence to the out-of-plane direction, on the other hand, shows no hole concentration dependence, where the switching process occurs via domain wall propagation. We show that the balance of <100> cubic magnetocrystalline anisotropy and uniaxial [110] anisotropy gives an understanding of the difference in the out-of-plane magnetization processes of (Ga,Mn)As epilayers.
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Submitted 22 March, 2006;
originally announced March 2006.
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Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature
Authors:
K. Hamaya,
T. Taniyama,
T. Koike,
Y. Yamazaki
Abstract:
We study the effect of the shape anisotropy on the magnetic domain configurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxial wire as a function of temperature. Using magnetoresistance measurements, we deduce the magnetic configurations and estimate the relative strength of the shape anisotropy compared with the intrinsic anisotropies. Since the intrinsic anisotropy is found t…
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We study the effect of the shape anisotropy on the magnetic domain configurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxial wire as a function of temperature. Using magnetoresistance measurements, we deduce the magnetic configurations and estimate the relative strength of the shape anisotropy compared with the intrinsic anisotropies. Since the intrinsic anisotropy is found to show a stronger temperature dependence than the shape anisotropy, the effect of the shape anisotropy on the magnetic domain configuration is relatively enhanced with increasing temperature. This information about the shape anisotropy provides a practical means of designing nanostructured spin electronic devices using (Ga,Mn)As.
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Submitted 6 March, 2006;
originally announced March 2006.
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Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration
Authors:
K. Hamaya,
T. Watanabe,
T. Taniyama,
A. Oiwa,
Y. Kitamoto,
Y. Yamazaki
Abstract:
We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperatu…
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We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperature-dependent ac susceptibility is significantly changed with increasing annealing time. On the basis of our recent scenario [Phys. Rev. Lett. 94, 147203 (2005); Phys. Rev. B 73, 155204 (2006).], we deduce that the growth of highly hole-concentrated cluster regions with [110] uniaxial anisotropy is likely the predominant cause of the enhancement in [110] uniaxial anisotropy at the high hole concentration regime. We can clearly rule out anisotropic lattice strain as a possible origin of the switching of the magnetic anisotropy.
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Submitted 19 June, 2006; v1 submitted 25 January, 2006;
originally announced January 2006.
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Dynamic relaxation of magnetic clusters in a ferromagnetic (Ga,Mn)As epilayer
Authors:
K. Hamaya,
T. Koike,
T. Taniyama,
T. Fujii,
Y. Kitamoto,
Y. Yamazaki
Abstract:
A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not interpreted with a single domain model [Phys. Rev. Lett. 95, 217204 (2005)], and the magnetic relaxation, which is similar to that seen in magnetic particles and…
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A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not interpreted with a single domain model [Phys. Rev. Lett. 95, 217204 (2005)], and the magnetic relaxation, which is similar to that seen in magnetic particles and granular systems, is becoming significant at temperatures above the lower-temperature peak in the temperature dependence of ac susceptibility, supporting the cluster/matrix model reported in our previous work [Phys. Rev. Lett. 94, 147203 (2005)]. Cole-Cole analysis reveals that magnetic interactions between such (Ga,Mn)As clusters are significant at temperatures below the higher-temperature peak in the temperature dependent ac susceptibility. The magnetizations of these films disappear above the temperature showing the higher-temperature peak, which is generally referred to as the Curie temperature. However, we suggest that these combined results are evidence that the temperature is actually the blocking temperature of (Ga,Mn)As clusters with a relatively high hole concentration compared to the (Ga,Mn)As matrix.
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Submitted 2 February, 2006; v1 submitted 16 November, 2005;
originally announced November 2005.
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Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As
Authors:
H. Kato,
K. Hamaya,
T. Taniyama,
Y. Kitamoto,
H. Munekata
Abstract:
We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga$^+$ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga$^+$ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange…
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We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga$^+$ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga$^+$ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange interaction between Mn spins. This change in hole concentration is also verified using micro-Raman spectroscopy. We envisage that this approach offers a means of modifying the ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter scale.
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Submitted 15 May, 2005;
originally announced May 2005.
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Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers
Authors:
H. Kato,
K. Hamaya,
Y. Kitamoto,
T. Taniyama,
H. Munekata
Abstract:
We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga$^{+}$ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced after the irradiation. Furthermore, an enhanced negative magnetoresistance (MR) and a change in the magnetization reversal process are also demonstrated at 4 K. R…
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We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga$^{+}$ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced after the irradiation. Furthermore, an enhanced negative magnetoresistance (MR) and a change in the magnetization reversal process are also demonstrated at 4 K. Raman scattering spectra indicate a decrease in the concentration of hole carriers after the irradiation, and a possible origin of the change in the magnetic properties is discussed.
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Submitted 1 October, 2004;
originally announced October 2004.
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Mixed magnetic phases in (Ga,Mn)As epilayers
Authors:
K. Hamaya,
T. Taniyama,
Y. Kitamoto,
Y. Yamazaki
Abstract:
Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with <100> cubic anisotropy. A change in the magnetic easy axis from [100]…
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Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with <100> cubic anisotropy. A change in the magnetic easy axis from [100] to [110] with increasing temperature can be explained by the reduced contribution of <100> cubic anisotropy to the magnetic properties above the transition temperature of the (Ga,Mn)As matrix.
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Submitted 1 October, 2004;
originally announced October 2004.
