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Paramagnetic singularities of the orbital magnetism in graphene with a moiré potential
Authors:
J. Vallejo Bustamante,
R. Ribeiro-Palau,
C. Fermon,
M. Pannetier-Lecoeur K. Watanabe,
T. Tanigushi,
R. Deblock,
S. Guéron,
M. Ferrier,
J. N. Fuchs,
G. Montambaux,
F. Piéchon,
H. Bouchiat
Abstract:
The recent detection of the singular diamagnetism of Dirac electrons in a single graphene layer paved a new way of probing 2D quantum materials through the measurement of equilibrium orbital currents which cannot be accessed in usual transport experiments. Among the theoretical predictions is an intriguing orbital paramagnetism at saddle points of the dispersion relation. Here we present magnetisa…
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The recent detection of the singular diamagnetism of Dirac electrons in a single graphene layer paved a new way of probing 2D quantum materials through the measurement of equilibrium orbital currents which cannot be accessed in usual transport experiments. Among the theoretical predictions is an intriguing orbital paramagnetism at saddle points of the dispersion relation. Here we present magnetisation measurements in graphene monolayers aligned on hexagonal boron nitride (hBN)crystals. Beside the sharp diamagnetic McClure response at the Dirac point, we detect extra diamagnetic singularities at the satellite Dirac points (sDP) of the moiré lattice. Surrounding these diamagnetic satellite peaks, we also observe paramagnetic peaks located at the chemical potential of the saddle points of the Graphene moiré band structure and relate them to the presence of van Hove logarithmic singularities in the density of states. These findings reveal the long ago predicted anomalous paramagnetic orbital response in 2D systems when the Fermi energy is tuned to the vicinity of saddle points.
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Submitted 1 April, 2023; v1 submitted 30 March, 2023;
originally announced March 2023.
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Detection of graphene's divergent orbital diamagnetism at the Dirac point
Authors:
J. Vallejo,
N. J. Wu,
C. Fermon,
M. Pannetier-Lecoeur,
T. Wakamura,
K. Watanabe,
T. Tanigushi,
T. Pellegrin,
A. Bernard,
S. Daddinounou,
V. Bouchiat,
S. Guéron,
M. Ferrier,
G. Montambaux,
H. Bouchiat
Abstract:
The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions…
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The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions, has not yet been measured in a single flake. In particular, the striking prediction of a divergent diamagnetic response at zero do** calls for an experimental test. Using a highly sensitive Giant Magnetoresistance sensor (GMR) we have measured the gate voltage-dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with theoretical predictions starting from the work of Mc Clure \cite{McClure1956}. Our measurements open a new field of investigation of orbital currents in graphene and 2D topological materials, offering a new means to monitor Berry phase singularities and explore correlated states generated by combined effects of Coulomb interactions, strain or moiré potentials.
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Submitted 21 December, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Gate-tunable non-volatile photomemory effect in MoS$_2$ transistors
Authors:
Andreij C. Gadelha,
Alisson R. Cadore,
Kenji Watanabe,
Takashi Tanigushi,
Ana M. de Paula,
Leandro M. Malard,
Rodrigo G. Lacerda,
Leonardo C. Campos
Abstract:
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodo** effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodo** promotes changes on…
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Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodo** effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodo** promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodo** is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodo**, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS$_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.
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Submitted 17 June, 2020;
originally announced June 2020.
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Room Temperature Valley Polarization and Coherence in Transition Metal Dichalcogenide-Graphene van der Waals Heterostructures
Authors:
Etienne Lorchat,
Stefano Azzini,
Thibault Chervy,
Takashi Tanigushi,
Kenji Watanabe,
Thomas W. Ebbesen,
Cyriaque Genet,
Stéphane Berciaud
Abstract:
Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and spin-valley locking in TMDs and (ii) exceptional electron and spin transport in graphene. The operation of such devices requires significant valley polarization…
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Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and spin-valley locking in TMDs and (ii) exceptional electron and spin transport in graphene. The operation of such devices requires significant valley polarization and valley coherence, ideally up to room temperature. Here, using a comprehensive Mueller polarimetry analysis, we report \textit{artifact-free} room temperature degrees of valley polarization up to $40~\%$ and, remarkably, of valley coherence up to $20~\%$ in monolayer tungsten disulfide (WS$_2$)/graphene heterostructures. Valley contrasts have been particularly elusive in molybdenum diselenide (MoSe$_2$), even at cryogenic temperatures. Upon interfacing monolayer MoSe$_2$ with graphene, the room temperature degrees of valley polarization and coherence are as high as $14~\%$ and $20~\%$, respectively. Our results are discussed in light of recent reports of highly efficient interlayer coupling and exciton transfer in TMD/graphene heterostructures and hold promise for room temperature chiral light-matter interactions and coherent opto-valleytronic devices.
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Submitted 18 April, 2018;
originally announced April 2018.
