Showing 201–250 of 2,067 results for author: Taniguchi, T

Nanoscale confinement and control of excitonic complexes in a monolayer WSe2

Authors: Hyowon Moon, Lukas Mennel, Chitraleema Chakraborty, Cheng Peng, Jawaher Almutlaq, Takashi Taniguchi, Kenji Watanabe, Dirk Englund

Abstract: Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited… ▽ More Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited optical spectroscopy nor lithography-limited electric control provides a proper tool to investigate these quasiparticles at the nanometer-scale at cryogenic temperature. Here, we introduce a cryogenic capacitive confocal optical microscope (C3OM) as a tool to study quasiparticle dynamics at the nanometer scale. Using a conductive atomic force microscope (AFM) tip as a gate electrode, we can modulate the electronic do** at the nanometer scale in WSe2 at 4K. This tool allows us to modulate with nanometer-scale confinement the exciton and trion peaks, as well a distinct photoluminescence line associated with a larger excitonic complex that exhibits distinctive nonlinear optical response. Our results demonstrate nanoscale confinement and spectroscopy of exciton complexes at arbitrary positions, which should prove an important tool for quantitative understanding of complex optoelectronic properties in semiconductors as well as for applications ranging from quantum spin liquids to superresolution measurements to control of quantum emitters. △ Less

Submitted 30 November, 2023; originally announced November 2023.

Observation of an electronic microemulsion phase emerging from a quantum crystal-to-liquid transition

Authors: Jiho Sung, Jue Wang, Ilya Esterlis, Pavel A. Volkov, Giovanni Scuri, You Zhou, Elise Brutschea, Takashi Taniguchi, Kenji Watanabe, Yubo Yang, Miguel A. Morales, Shiwei Zhang, Andrew J. Millis, Mikhail D. Lukin, Philip Kim, Eugene Demler, Hongkun Park

Abstract: Strongly interacting electronic systems possess rich phase diagrams resulting from the competition between different quantum ground states. A general mechanism that relieves this frustration is the emergence of microemulsion phases, where regions of different phase self-organize across multiple length scales. The experimental characterization of these phases often poses significant challenges, as… ▽ More Strongly interacting electronic systems possess rich phase diagrams resulting from the competition between different quantum ground states. A general mechanism that relieves this frustration is the emergence of microemulsion phases, where regions of different phase self-organize across multiple length scales. The experimental characterization of these phases often poses significant challenges, as the long-range Coulomb interaction microscopically mingles the competing states. Here, we use cryogenic reflectance and magneto-optical spectroscopy to observe the signatures of the mixed state between an electronic Wigner crystal and an electron liquid in a MoSe2 monolayer. We find that the transit into this 'microemulsion' state is marked by anomalies in exciton reflectance, spin susceptibility, and Umklapp scattering, establishing it as a distinct phase of electronic matter. Our study of the two-dimensional electronic microemulsion phase elucidates the physics of novel correlated electron states with strong Coulomb interactions. △ Less

Submitted 22 December, 2023; v1 submitted 29 November, 2023; originally announced November 2023.

Atomic engineering of interfacial polarization switching in van der Waals multilayers

Authors: Madeline Van Winkle, Nikita Dowlatshahi, Nikta Khaloo, Mrinalni Iyer, Isaac M. Craig, Rohan Dhall, Takashi Taniguchi, Kenji Watanabe, D. Kwabena Bediako

Abstract: In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. H… ▽ More In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here, we show that introducing interlayer rotations in multilayer vdW heterostructures modulates both the spatial ordering and switching dynamics of polar domains, engendering unique tunability that is unparalleled in conventional bulk ferroelectrics or polar bilayers. Using operando transmission electron microscopy we show how changing the relative rotations of three WSe2 layers produces structural polytypes with distinct arrangements of polar domains, leading to either a global or localized switching response. Introducing uniaxial strain generates structural anisotropy that yields a range of switching behaviors, coercivities, and even tunable biased responses. We also provide evidence of physical coupling between the two interfaces of the trilayer, a key consideration for controlling switching dynamics in polar multilayer structures more broadly. △ Less

Submitted 28 November, 2023; originally announced November 2023.

Comments: 22 pages, 5 figures

Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor

Authors: Omid Ghaebi, Sebastian Klimmer, Nele Tornow, Niels Buijssen, Takashi Taniguchi, Kenji Watanabe, Andrea Tomadin, Habib Rostami, Giancarlo Soavi

Abstract: Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, we combine lattice temperatu… ▽ More Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, we combine lattice temperature, electron do**, and all-optical tuning of third-harmonic generation in a hBN-encapsulated graphene opto-electronic device and demonstrate up to 85% modulation depth along with gate-tunable ultrafast dynamics. These results arise from the dynamic changes in the transient electronic temperature combined with Pauli blocking induced by the out-of-equilibrium chemical potential. Our work provides a detailed description of the transient nonlinear optical and electronic response of graphene, which is crucial for the design of nanoscale and ultrafast optical modulators, detectors and frequency converters. △ Less

Submitted 28 November, 2023; originally announced November 2023.

Comments: 28 pages, 6 figures

Room-temperature correlated states in twisted bilayer MoS$_2$

Authors: Fanfan Wu, Qiaoling Xu, Qinqin Wang, Yanbang Chu, Lu Li, Jian Tang, Jieying Liu, **peng Tian, Yiru Ji, Le Liu, Yalong Yuan, Zhiheng Huang, Jiaojiao Zhao, Xiaozhou Zan, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Gangxu Gu, Yang Xu, Lede Xian, Wei Yang, Luojun Du, Guangyu Zhang

Abstract: Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator i… ▽ More Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator in AB-stacked MoS$_2$ homo-bilayer moiré superlattices. Correlated insulating states at moiré band filling factors v = 1, 2, 3 are unambiguously established in twisted bilayer MoS$_2$. Remarkably, the correlated electronic states can persist up to a record-high critical temperature of over 285 K. The realization of room-temperature correlated states in twisted bilayer MoS$_2$ can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large non-linear Hall responses up to room-temperature are uncovered near correlated insulating states, demonstrating the quantum geometry of moiré flat conduction band. △ Less

Submitted 28 November, 2023; originally announced November 2023.

Comments: 13 pages, 3 figures

Non-linear Landau fan diagram for graphene electrons exposed to a moiré potential

Authors: Pilkyung Moon, Youngwook Kim, Mikito Koshino, Takashi Taniguchi, Kenji Watanabe, Jurgen H. Smet

Abstract: Due to Landau quantization, the conductance of two-dimensional electrons exposed to a perpendicular magnetic field exhibits oscillations that generate a fan of linear trajectories when plotted in the parameter space spanned by density and magnetic field. This fan looks identical irrespective of the electron dispersion details that determines the field dependence of the Landau level energy. This is… ▽ More Due to Landau quantization, the conductance of two-dimensional electrons exposed to a perpendicular magnetic field exhibits oscillations that generate a fan of linear trajectories when plotted in the parameter space spanned by density and magnetic field. This fan looks identical irrespective of the electron dispersion details that determines the field dependence of the Landau level energy. This is no surprise, since the position of conductance minima solely depends on the level degeneracy which is linear in flux. The fractal energy spectrum that emerges within each Landau band when electrons are also exposed to a two-dimensional superlattice potential produces numerous additional oscillations, but they too create just linear fans for the same reason. Here, we report on conductance oscillations of graphene electrons exposed to a moiré potential that defy this general rule of flux linearity and attribute the anomalous behavior to the simultaneous occupation of multiple minibands and magnetic breakdown. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Journal ref: Nano Letters (2024)

One-dimensional moire chains with partially-filled flat bands in two-dimensional twisted bilayer WSe2

Authors: Ya-Ning Ren, Hui-Ying Ren, Kenji Watanabe, Takashi Taniguchi, Lin He

Abstract: Two-dimensional (2D) moire systems based on twisted bilayer graphene and transition metal dichalcogenides provide a promising platform to investigate emergent phenomena driven by strong electron-electron interactions in partially-filled flat bands1-11. A natural question arises: is it possible to expand the 2D correlated moire physics to one-dimensional (1D)? This requires selectively do** of 1D… ▽ More Two-dimensional (2D) moire systems based on twisted bilayer graphene and transition metal dichalcogenides provide a promising platform to investigate emergent phenomena driven by strong electron-electron interactions in partially-filled flat bands1-11. A natural question arises: is it possible to expand the 2D correlated moire physics to one-dimensional (1D)? This requires selectively do** of 1D moire chain embedded in the 2D moire systems, which is an outstanding challenge in experiment and seems to be not within the grasp of today's technology. Therefore, an experimental demonstration of the 1D moire chain with partially-filled flat bands remains absent. Here we show that we can introduce 1D boundaries, separating two regions with different twist angles, in twisted bilayer WSe2 (tWSe2) by using scanning tunneling microscopy (STM), and demonstrate that the flat bands of moire sites along the 1D boundaries can be selectively filled. The charge and discharge states of correlated moire electrons in the 1D moire chain can be directly imaged and manipulated by combining a back-gate voltage with the STM bias. Our results open the door for realizing new correlated electronic states of the 1D moire chain in 2D systems. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Spectroscopy of a single-carrier bilayer graphene quantum dot from time-resolved charge detection

Authors: Hadrien Duprez, Solenn Cances, Andraz Omahen, Michele Masseroni, Max J. Ruckriegel, Christoph Adam, Chuyao Tong, Jonas Gerber, Rebekka Garreis, Wister Huang, Lisa Gächter, Takashi Taniguchi, Kenji Watanabe, Thomas Ihn, Klaus Ensslin

Abstract: We measured the spectrum of a single-carrier bilayer graphene quantum dot as a function of both parallel and perpendicular magnetic fields, using a time-resolved charge detection technique that gives access to individual tunnel events. Thanks to our unprecedented energy resolution of 4$μ~$eV, we could distinguish all four levels of the dot's first orbital, in particular in the range of magnetic fi… ▽ More We measured the spectrum of a single-carrier bilayer graphene quantum dot as a function of both parallel and perpendicular magnetic fields, using a time-resolved charge detection technique that gives access to individual tunnel events. Thanks to our unprecedented energy resolution of 4$μ~$eV, we could distinguish all four levels of the dot's first orbital, in particular in the range of magnetic fields where the first and second excited states cross ($B_\perp\lesssim 100~$mT). We thereby experimentally establish, the hitherto extrapolated, single-charge carrier spectrum picture and provide a new upper bound for the inter-valley mixing, equal to our energy resolution. △ Less

Submitted 21 November, 2023; originally announced November 2023.

Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures

Authors: Andrew Y. Joe, Andrés M. Mier Valdivia, Luis A. Jauregui, Kateryna Pistunova, Dapeng Ding, You Zhou, Giovanni Scuri, Kristiaan De Greve, Andrey Sushko, Bumho Kim, Takashi Taniguchi, Kenji Watanabe, James C. Hone, Mikhail D. Lukin, Hongkun Park, Philip Kim

Abstract: Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrost… ▽ More Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices. △ Less

Submitted 11 June, 2024; v1 submitted 21 November, 2023; originally announced November 2023.

Comments: 14 pages, 4 main figures, 1 extended data figure

Non-volatile electrical polarization switching via domain wall release in 3R-MoS$_2$ bilayer

Authors: Dongyang Yang, **g Liang, **gda Wu, Yunhuan Xiao, Jerry I. Dadap, Kenji Watanabe, Takashi Taniguchi, Ziliang Ye

Abstract: Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS$_2$ with a natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through an asymmetric interlayer coupling… ▽ More Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS$_2$ with a natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through an asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 4 Figures

On-chip multi-degree-of-freedom control of two-dimensional quantum and nonlinear materials

Authors: Haoning Tang, Yiting Wang, Xueqi Ni, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero, Shanhui Fan, Eric Mazur, Amir Yacoby, Yuan Cao

Abstract: Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While electrostatic gating is simple and has been ubiquitously employed on 2DM, being able to tailor the interfacial properties in a similar real-time manner represen… ▽ More Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While electrostatic gating is simple and has been ubiquitously employed on 2DM, being able to tailor the interfacial properties in a similar real-time manner represents the next leap in our ability to modulate the underlying physics and build exotic devices with 2DM. However, all existing approaches rely on external machinery such as scanning microscopes, which often limit their scope of applications, and there is currently no means of tuning a 2D interface that has the same accessibility and scalability as electrostatic gating. Here, we demonstrate the first on-chip platform designed for 2D materials with in situ tunable interfacial properties, utilizing a microelectromechanical system (MEMS). Each compact, cost-effective, and versatile device is a standalone micromachine that allows voltage-controlled approaching, twisting, and pressurizing of 2DM with high accuracy. As a demonstration, we engineer synthetic topological singularities, known as merons, in the nonlinear optical susceptibility of twisted hexagonal boron nitride (h-BN), via simultaneous control of twist angle and interlayer separation. The chirality of the resulting moire pattern further induces a strong circular dichroism in the second-harmonic generation. A potential application of this topological nonlinear susceptibility is to create integrated classical and quantum light sources that have widely and real-time tunable polarization. Our invention pushes the boundary of available technologies for manipulating low-dimensional quantum materials, which in turn opens up the gateway for designing future hybrid 2D-3D devices for condensed-matter physics, quantum optics, and beyond. △ Less

Submitted 14 June, 2024; v1 submitted 20 November, 2023; originally announced November 2023.

Comments: 10 pages, 4 figures

Probing the tunable multi-cone bandstructure in Bernal bilayer graphene

Authors: Anna M. Seiler, Nils Jacobsen, Martin Statz, Noelia Fernandez, Francesca Falorsi, Kenji Watanabe, Takashi Taniguchi, Zhiyu Dong, Leonid S. Levitov, R. Thomas Weitz

Abstract: Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the bandstructure, featuring two distinct regimes. In one regime, which is well established and widely used, a tunable bandgap is induced by… ▽ More Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the bandstructure, featuring two distinct regimes. In one regime, which is well established and widely used, a tunable bandgap is induced by a large enough transverse displacement field. Another is a gapless metallic band occurring near charge neutrality and at not too strong fields, featuring rich 'fine structure' consisting of four linearly-dispersing Dirac cones with opposite chiralities in each valley and van Hove singularities. Even though BLG was extensively studied experimentally in the last two decades, the evidence of this exotic bandstructure is still elusive, likely due to insufficient energy resolution. Here, rather than probing the bandstructure by direct spectroscopy, we use Landau levels as markers of the energy dispersion and carefully analyze the Landau level spectrum in a regime where the cyclotron orbits of electrons or holes in momentum space are small enough to resolve the distinct mini Dirac cones. We identify the presence of four distinct Dirac cones and map out complex topological transitions induced by electric displacement field. These findings introduce a valuable addition to the toolkit for graphene electronics. △ Less

Submitted 17 November, 2023; originally announced November 2023.

Tunable Inter-Moiré Physics in Consecutively-Twisted Trilayer Graphene

Authors: Wei Ren, Konstantin Davydov, Ziyan Zhu, Jaden Ma, Kenji Watanabe, Takashi Taniguchi, Efthimios Kaxiras, Mitchell Luskin, Ke Wang

Abstract: We fabricate a twisted trilayer graphene device with consecutive twist angles of 1.33 and 1.64 degrees, in which we electrostatically tune the electronic states from each of the two co-existing moiré superlattices and the interactions between them. When both moiré superlattices contribute equally to electrical transport, we report a new type of inter-moiré Hofstadter butterfly. Its Brown-Zak oscil… ▽ More We fabricate a twisted trilayer graphene device with consecutive twist angles of 1.33 and 1.64 degrees, in which we electrostatically tune the electronic states from each of the two co-existing moiré superlattices and the interactions between them. When both moiré superlattices contribute equally to electrical transport, we report a new type of inter-moiré Hofstadter butterfly. Its Brown-Zak oscillation corresponds to one of the intermediate quasicrystal length scales of the reconstructed moiré of moiré (MoM) superlattice, shedding new light on emergent physics from competing atomic orders. △ Less

Submitted 16 November, 2023; originally announced November 2023.

Imaging Self-aligned Moiré Crystals and Quasicrystals in Magic-angle Bilayer Graphene on hBN Heterostructures

Authors: Xinyuan Lai, Daniele Guerci, Guohong Li, Kenji Watanabe, Takashi Taniguchi, Justin Wilson, Jedediah H. Pixley, Eva Y. Andrei

Abstract: Using scanning-tunneling-microscopy and theoretical modeling on heterostructures of twisted bilayer graphene and hexagonal Boron-Nitride, we show that the emergent super-moire structures display a rich landscape of moire-crystals and quasicrystals. We reveal a phase-diagram comprised of commensurate moire-crystals embedded in swaths of moire quasicrystals. The 1:1 commensurate crystal, expected to… ▽ More Using scanning-tunneling-microscopy and theoretical modeling on heterostructures of twisted bilayer graphene and hexagonal Boron-Nitride, we show that the emergent super-moire structures display a rich landscape of moire-crystals and quasicrystals. We reveal a phase-diagram comprised of commensurate moire-crystals embedded in swaths of moire quasicrystals. The 1:1 commensurate crystal, expected to be a Chern insulator, should only exist at one point on the phase-diagram, implying that it ought to be practically undetectable. Surprisingly we find that the commensurate crystals exist over a much wider than predicted range, providing evidence of an unexpected self-alignment mechanism that is explained using an elastic-network model. The remainder of the phase-diagram, where we observe tunable quasicrystals, affords a new platform for exploring the unique electronic-properties of these rarely found in nature structures. △ Less

Submitted 13 November, 2023; originally announced November 2023.

Comments: 37 pages, 18 figures

Full-dry flip** transfer method for van der Waals heterostructure

Authors: Dohun Kim, Soyun Kim, Yanni Cho, Jaesung Lee, Kenji Watanabe, Takashi Taniguchi, Minkyung Jung, Joseph Falson, Youngwook Kim

Abstract: We present a novel flip** transfer method for van der Waals heterostructures, offering a significant advancement over previous techniques by eliminating the need for polymers and solvents. Here, we utilize commercially available gel film and control its stickiness through oxygen plasma and UV-Ozone treatment, also effectively removing residues from the gel film surface. The cleanliness of the su… ▽ More We present a novel flip** transfer method for van der Waals heterostructures, offering a significant advancement over previous techniques by eliminating the need for polymers and solvents. Here, we utilize commercially available gel film and control its stickiness through oxygen plasma and UV-Ozone treatment, also effectively removing residues from the gel film surface. The cleanliness of the surface is verified through atomic force microscopy. We investigate the quality of our fabricated devices using magnetotransport measurements on graphene/hBN and graphene/α-RuCl3 heterostructures. Remarkably,graphene/hBN devices produced with the flip** method display quality similar to that of fully encapsulated devices. This is evidenced by the presence of a symmetry-broken state at 1 T. Additionally, features of the Hofstadter butterfly were also observed in the second devices. In the case of graphene/α-RuCl3, we observe quantum oscillations with a beating mode and two-channel conduction, consistent with fully encapsulated devices. △ Less

Submitted 21 November, 2023; v1 submitted 13 November, 2023; originally announced November 2023.

Comments: accepted to Current Applied Physics

Engineering 2D material exciton lineshape with graphene/h-BN encapsulation

Authors: Steffi Y. Woo, Fuhui Shao, Ashish Arora, Robert Schneider, Nianjheng Wu, Andrew J. Mayne, Ching-Hwa Ho, Mauro Och, Cecilia Mattevi, Antoine Reserbat-Plantey, Alvaro Moreno, Hanan Herzig Sheinfux, Kenji Watanabe, Takashi Taniguchi, Steffen Michaelis de Vasconcellos, Frank H. L. Koppens, Zhichuan Niu, Odile Stéphan, Mathieu Kociak, F. Javier García de Abajo, Rudolf Bratschitsch, Andrea Konečná, Luiz H. G. Tizei

Abstract: Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical do**, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs… ▽ More Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical do**, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward sha** the spectral profile of narrow optical modes for application in nanophotonic devices. △ Less

Submitted 13 November, 2023; originally announced November 2023.

Valley-hybridized gate-tunable 1D exciton confinement in MoSe2

Authors: Maximilian Heithoff, Álvaro Moreno, Iacopo Torre, Matthew S. G. Feuer, Carola M. Purser, Gian Marcello Andolina, Giuseppe Calajo, Kenji Watanabe, Takashi Taniguchi, Dhiren Kara, Patrick Hays, Sefaattin Tongay, Vladimir Falko, Darrick Chang, Mete Atatüre, Antoine Reserbat-Plantey, Frank Koppens

Abstract: Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton interaction regimes, enabling exciton-based logic operations, exploring exotic quantum phases of matter, facilitating deterministic positioning and tuning of quant… ▽ More Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton interaction regimes, enabling exciton-based logic operations, exploring exotic quantum phases of matter, facilitating deterministic positioning and tuning of quantum emitters, and designing advanced optoelectronic devices. Monolayers of transition metal dichalcogenides (TMDs) offer inherent two-dimensional confinement and possess significant binding energies, making them particularly promising candidates for achieving electric-field-based confinement of excitons without dissociation. While previous exciton engineering strategies have predominantly focused on local strain gradients, the recent emergence of electrically confined states in TMDs has paved the way for novel approaches. Exploiting the valley degree of freedom associated with these confined states further broadens the prospects for exciton engineering. Here, we show electric control of light polarization emitted from one-dimensional (1D) quantum confined states in MoSe2. By employing non-uniform in-plane electric fields, we demonstrate the in-situ tuning of the trap** potential and reveal how gate-tunable valley-hybridization gives rise to linearly polarized emission from these localized states. Remarkably, the polarization of the localized states can be entirely engineered through either the spatial geometry of the 1D confinement potential or the application of an out-of-plane magnetic field. △ Less

Submitted 15 November, 2023; v1 submitted 9 November, 2023; originally announced November 2023.

High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices

Authors: A. L. Shilov, M. A. Kashchenko, P. A. Pantaleón, M. Kravtsov, A. Kudriashov, Z. Zhan, T. Taniguchi, K. Watanabe, S. Slizovskiy, K. S. Novoselov, V. I. Fal'ko, F. Guinea, D. A. Bandurin

Abstract: Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the u… ▽ More Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS. △ Less

Submitted 8 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Journal ref: ACS Nano 2024

Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride

Authors: Adam Krzysztof Szczerba, Julia Kucharek, Jan Pawłowski, Takashi Taniguchi, Kenji Watanabe, Wojciech Pacuski

Abstract: We investigate the feasibility of epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of qu… ▽ More We investigate the feasibility of epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of quantum wells on two dimensional, almost perfectly flat hBN appears to be very different from growth on bulk substrates, in particular it requires 70-100$^\circ$C lower temperatures. △ Less

Submitted 8 November, 2023; originally announced November 2023.

Comments: submitted to ACS Omega, 7 pages, 8 figures

Journal ref: ACS Omega 2023, 8 (47), 44745-44750

Lewis's Signaling Game as beta-VAE For Natural Word Lengths and Segments

Authors: Ryo Ueda, Tadahiro Taniguchi

Abstract: As a sub-discipline of evolutionary and computational linguistics, emergent communication (EC) studies communication protocols, called emergent languages, arising in simulations where agents communicate. A key goal of EC is to give rise to languages that share statistical properties with natural languages. In this paper, we reinterpret Lewis's signaling game, a frequently used setting in EC, as be… ▽ More As a sub-discipline of evolutionary and computational linguistics, emergent communication (EC) studies communication protocols, called emergent languages, arising in simulations where agents communicate. A key goal of EC is to give rise to languages that share statistical properties with natural languages. In this paper, we reinterpret Lewis's signaling game, a frequently used setting in EC, as beta-VAE and reformulate its objective function as ELBO. Consequently, we clarify the existence of prior distributions of emergent languages and show that the choice of the priors can influence their statistical properties. Specifically, we address the properties of word lengths and segmentation, known as Zipf's law of abbreviation (ZLA) and Harris's articulation scheme (HAS), respectively. It has been reported that the emergent languages do not follow them when using the conventional objective. We experimentally demonstrate that by selecting an appropriate prior distribution, more natural segments emerge, while suggesting that the conventional one prevents the languages from following ZLA and HAS. △ Less

Submitted 2 April, 2024; v1 submitted 7 November, 2023; originally announced November 2023.

Comments: ICLR2024 camera-ready

Harnessing excitons at the nanoscale -- photoelectrical platform for quantitative sensing and imaging

Authors: Zhurun Ji, Mark E. Barber, Ziyan Zhu, Carlos R. Kometter, Jiachen Yu, Kenji Watanabe, Takashi Taniguchi, Mengkun Liu, Thomas P. Devereaux, Benjamin E. Feldman, Zhixun Shen

Abstract: Excitons -- quasiparticles formed by the binding of an electron and a hole through electrostatic attraction -- hold promise in the fields of quantum light confinement and optoelectronic sensing. Atomically thin transition metal dichalcogenides (TMDs) provide a versatile platform for hosting and manipulating excitons, given their robust Coulomb interactions and exceptional sensitivity to dielectric… ▽ More Excitons -- quasiparticles formed by the binding of an electron and a hole through electrostatic attraction -- hold promise in the fields of quantum light confinement and optoelectronic sensing. Atomically thin transition metal dichalcogenides (TMDs) provide a versatile platform for hosting and manipulating excitons, given their robust Coulomb interactions and exceptional sensitivity to dielectric environments. In this study, we introduce a cryogenic scanning probe photoelectrical sensing platform, termed exciton-resonant microwave impedance microscopy (ER-MIM). ER-MIM enables ultra-sensitive probing of exciton polarons and their Rydberg states at the nanoscale. Utilizing this technique, we explore the interplay between excitons and material properties, including carrier density, in-plane electric field, and dielectric screening. Furthermore, we employ deep learning for automated data analysis and quantitative extraction of electrical information, unveiling the potential of exciton-assisted nano-electrometry. Our findings establish an invaluable sensing platform and readout mechanism, advancing our understanding of exciton excitations and their applications in the quantum realm. △ Less

Submitted 18 December, 2023; v1 submitted 7 November, 2023; originally announced November 2023.

On-chip transfer of ultrashort graphene plasmon wavepackets using terahertz electronics

Authors: Katsumasa Yoshioka, Guillaume Bernard, Taro Wakamura, Masayuki Hashisaka, Ken-ichi Sasaki, Satoshi Sasaki, Kenji Watanabe, Takashi Taniguchi, Norio Kumada

Abstract: Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulat… ▽ More Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulating, and reading out terahertz graphene plasmon-polariton wavepackets on-chip. By injecting an electrical pulse into graphene via an ohmic contact, we achieve coherent conversion of the pulse into a plasmon wavepacket exhibiting a pulse duration of 1.2 ps and extreme three-dimensional spatial confinement within a volume of $2.1 \times 10^{-18} m^3$. We reveal the transport properties of plasmons along graphene ribbons in different dielectric environments, providing a basis for designing graphene plasmonic circuits. Furthermore, we find that the conversion efficiency between the electrical pulses and plasmon wavepackets reaches ~30% thanks to the absence of a momentum mismatch. With unprecedented controllability, our platform represents a significant advance in on-chip handling of plasmonic signals in various van der Waals heterostructures. △ Less

Submitted 5 November, 2023; originally announced November 2023.

Comments: 19 pages, 5 figures, Supplementary information

Exchange energy of the ferromagnetic electronic ground-state in a monolayer semiconductor

Authors: Nadine Leisgang, Dmitry Miserev, Hinrich Mattiat, Lukas Schneider, Lukas Sponfeldner, Kenji Watanabe, Takashi Taniguchi, Martino Poggio, Richard J. Warburton

Abstract: Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions… ▽ More Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions are identified using a model which accounts for the injection process, the formation of antisymmetrized trion states, electron-hole scattering from one valley to the other, and recombination. The results are consistent with a complete spin polarization. From the splittings between different trion states, we measure the exchange energy, $Σ$, the energy required to flip a single spin within the ferromagnetic state, as well as the intervalley Coulomb exchange energy, $J$. We determine $Σ=11.2\,$meV and $J=5\,$meV at $n=1.5 \times 10^{12}\,$cm$^{-2}$, and find that $J$ depends strongly on the electron density, $n$. △ Less

Submitted 3 November, 2023; originally announced November 2023.

Comments: 13 pages, 11 figures

Imaging de Haas-van Alphen quantum oscillations and milli-Tesla pseudomagnetic fields

Authors: Haibiao Zhou, Nadav Auerbach, Matan Uzan, Yaozhang Zhou, Nasrin Banu, Weifeng Zhi, Martin E. Huber, Kenji Watanabe, Takashi Taniguchi, Yuri Myasoedov, Binghai Yan, Eli Zeldov

Abstract: A unique attribute of atomically thin quantum materials is the in-situ tunability of their electronic band structure by externally controllable parameters like electrostatic do**, electric field, strain, electron interactions, and displacement or twisting of atomic layers. This unparalleled control of the electronic bands has led to the discovery of a plethora of exotic emergent phenomena. But d… ▽ More A unique attribute of atomically thin quantum materials is the in-situ tunability of their electronic band structure by externally controllable parameters like electrostatic do**, electric field, strain, electron interactions, and displacement or twisting of atomic layers. This unparalleled control of the electronic bands has led to the discovery of a plethora of exotic emergent phenomena. But despite its key role, there is currently no versatile method for map** the local band structure in advanced 2D materials devices in which the active layer is commonly embedded in various insulating layers and metallic gates. Utilizing a scanning superconducting quantum interference device, we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which displays multiple highly-tunable bands. By resolving thermodynamic quantum oscillations spanning over 100 Landau levels in low magnetic fields, we reconstruct the band structure and its controllable evolution with the displacement field with unprecedented precision and spatial resolution of 150 nm. Moreover, by develo** Landau level interferometry, we reveal shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially-induced large strain, which leads to pseudomagnetic fields of hundreds of Tesla, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by just 1 millidegree over one μm distance, two orders of magnitude lower than the typical angle disorder in high-quality twisted bilayer graphene devices. This ability to resolve the local band structure and strain on the nanoscale opens the door to the characterization and utilization of tunable band engineering in practical van der Waals devices. △ Less

Submitted 3 November, 2023; originally announced November 2023.

Comments: Nature (2023)

Probing interlayer interactions and commensurate-incommensurate transition in twisted bilayer graphene through Raman spectroscopy

Authors: Vineet Pandey, Subhendu Mishra, Nikhilesh Maity, Sourav Paul, Abhijith M B, Ajit Roy, Nicholas R Glavin, Kenji Watanabe, Takashi Taniguchi, Abhishek Kumar Singh, Vidya Kochat

Abstract: Twisted 2D layered materials have garnered a lot of attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation / twist angle between the adjacent layers. In this work, we explore a prototype of such a twisted 2D system, artificially stacked twisted bilayer graphene (TBLG), where we probe the changes in the interlayer… ▽ More Twisted 2D layered materials have garnered a lot of attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation / twist angle between the adjacent layers. In this work, we explore a prototype of such a twisted 2D system, artificially stacked twisted bilayer graphene (TBLG), where we probe the changes in the interlayer interactions and electron-phonon scattering pathways as the twist angle is varied from 0° to 30°, using Raman spectroscopy. The long range Moiré potential of the superlattice gives rise to additional intravalley and intervalley scattering of the electrons in TBLG which have been investigated through their Raman signatures. The density functional theory (DFT) calculations of the electronic band structure of the TBLG superlattices was found to be in agreement with the resonant Raman excitations across the van Hove singularities in the valence and conduction bands predicted for TBLG due to hybridization of bands from the two layers. We also observe that the relative rotation between the graphene layers has a marked influence on the second order overtone and combination Raman modes signalling a commensurate-incommensurate transition in TBLG as the twist angle increases. This serves as a convenient and rapid characterization tool to determine the degree of commensurability in TBLG systems. △ Less

Submitted 2 November, 2023; originally announced November 2023.

Journal ref: ACS Nano 2024

Floquet engineering in the presence of optically excited carriers

Authors: Mitchell A. Conway, Jonathan O. Tollerud, Thi-Hai-Yen Vu, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis

Abstract: Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still be… ▽ More Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still being able to accurately resolve bandstructure changes. Here, we drive an AC-Stark effect in monolayer WS$_2$ using pulses with constant fluence but varying pulse duration (from 25-235~fs). With shorter pump pulses, the corresponding increase in peak intensity introduces additional carriers via two-photon absorption, leading to additional decoherence and peak broadening (which makes it difficult to resolve the AC-Stark shift). We use multidimensional coherent spectroscopy to create a coherent ensemble of excitons in monolayer WS$_2$ and measure the evolution of the coherence throughout the duration of the Floquet pump pulse. Changes to the amplitude of the macroscopic coherence quantifies the additional broadening. At the same time, the evolution of the average phase allows the instantaneous changes to the bandstructure to be quantified, and is not impacted by the additional broadening. This approach to measuring the evolution of Floquet-Bloch states demonstrates a means to quantify effective heating and non-adiabaticity caused by excited carriers, while at the same time resolving the coherent evolution of the bandstructure. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Journal ref: Physical Review B 109, 104302 (2024)

Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors

Authors: Gyuna Park, Ivan Zhigulin, Hoyoung Jung, Jake Horder, Karin Yamamura, Yerin Han, Kenji Watanabe, Takashi Taniguchi, Igor Aharonovich, Jonghwan Kim

Abstract: Defects in wide bandgap semiconductors have recently emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of emitters may pave the way to scalable on-chip devices, and therefore is highly sought after. However, most wide band gap materials are not amenable to efficient do**, which in turn poses challenges on efficient electrical excitation and on-ch… ▽ More Defects in wide bandgap semiconductors have recently emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of emitters may pave the way to scalable on-chip devices, and therefore is highly sought after. However, most wide band gap materials are not amenable to efficient do**, which in turn poses challenges on efficient electrical excitation and on-chip integration. Here, we demonstrate for the first time room temperature electroluminescence from isolated colour centres in hexagonal boron nitride (hBN). We harness the van der Waals (vdW) structure of two-dimensional materials, and engineer nanoscale devices comprised of graphene - hBN - graphene tunnel junctions. Under an applied bias, charge carriers are injected into hBN, and result in a localised light emission from the hBN colour centres. Remarkably, our devices operate at room temperature and produce robust, narrowband emission spanning a wide spectral range - from the visible to the near infrared. Our work marks an important milestone in van der Waals materials and their promising attributes for integrated quantum technologies and on-chip photonic circuits. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Comments: 16 pages, 4 figures

Constructing the Fulde-Ferrell-Larkin-Ovchinnikov state in antiferromagnetic insulator CrOCl

Authors: Yifan Ding, Jiadian He, Shihao Zhang, Huakun Zuo, **fan Gu, Jiliang Cai, Xiaohui Zeng, Pu Yan, Kecheng Cao, Kenji Watanabe, Takashi Taniguchi, Peng Dong, Yiwen Zhang, Yueshen Wu, Xiang Zhou, **ghui Wang, Yulin Chen, Yu Ye, Jianpeng Liu, Jun Li

Abstract: Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, w… ▽ More Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, we report the observation of superconductivity in a few-layer antiferromagnetic insulator CrOCl by utilizing superconducting proximity effect with NbSe2 flakes. The superconductivity demonstrates a considerably weak gap of about 0.12 meV and the in-plane upper critical field reveals as behavior of the FFLO state at low temperature. Our first-principles calculations indicate that the proximitized superconductivity may exist in the CrOCl layer with Cr vacancies or line-defects. Moreover, the FFLO state could be induced by the inherent larger spin splitting in the CrOCl layer. Our findings not only demonstrate the fascinating interaction between superconductivity and magnetism, but also provide a possible path to construct FFLO state by intrinsic time reversal symmetry breaking and superconducting proximity effect. △ Less

Submitted 31 October, 2023; originally announced November 2023.

Proximity effect induced intriguing superconductivity in van der Waals heterostructure of magnetic topological insulator and conventional superconductor

Authors: Peng Dong, Xiang Zhou, Xiaofei Hou, Jiadian He, Yiwen Zhang, Yifan Ding, Xiaohui Zeng, **ghui Wang, Yueshen Wu, Kenji Watanabe, Takashi Taniguchi, Wei Xia, Yanfeng Guo, Yulin Chen, Wei Li, Jun Li

Abstract: Nontrivial topological superconductivity has received enormous research attentions due to its potential for diverse applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological insulator and a superconductor is, however, still widely open. Here, we systemically report an emergent superconductivity in a cross-junction composed of a magnetic top… ▽ More Nontrivial topological superconductivity has received enormous research attentions due to its potential for diverse applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological insulator and a superconductor is, however, still widely open. Here, we systemically report an emergent superconductivity in a cross-junction composed of a magnetic topological insulator MnBi2Te4 and a conventional superconductor NbSe2. Remarkably, the interface indicates existence of a reduced superconductivity at surface of NbSe2 and a proximity-effectinduced superconductivity at surface of MnBi2Te4. Furthermore, the in-plane angular-dependent magnetoresistance measurements reveal the fingerprints of the paring symmetry behaviors for these superconducting gaps as a unconventional nature. Our findings extend our views and ideas of topological superconductivity in the superconducting heterostructures with time-reversal symmetry breaking, offering an exciting opportunity to elucidate the cooperative effects on the surface state of a topological insulator aligning a superconductor. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: 6 pages, 4 figures

de Haas-van Alphen spectroscopy and fractional quantization of magnetic-breakdown orbits in moiré graphene

Authors: Matan Bocarsly, Matan Uzan, Indranil Roy, Sameer Grover, Jiewen Xiao, Zhiyu Dong, Mikhail Labendik, Aviram Uri, Martin E. Huber, Yuri Myasoedov, Kenji Watanabe, Takashi Taniguchi, Binghai Yan, Leonid S. Levitov, Eli Zeldov

Abstract: Quantum oscillations originating from the quantization of the electron cyclotron orbits provide ultrasensitive diagnostics of electron bands and interactions in novel materials. We report on the first direct-space nanoscale imaging of the thermodynamic magnetization oscillations due to the de Haas-van Alphen effect in moiré graphene. Scanning by SQUID-on-tip in Bernal bilayer graphene crystal-axis… ▽ More Quantum oscillations originating from the quantization of the electron cyclotron orbits provide ultrasensitive diagnostics of electron bands and interactions in novel materials. We report on the first direct-space nanoscale imaging of the thermodynamic magnetization oscillations due to the de Haas-van Alphen effect in moiré graphene. Scanning by SQUID-on-tip in Bernal bilayer graphene crystal-axis-aligned to hBN reveals abnormally large magnetization oscillations with amplitudes reaching 500 μ_B/electron in weak magnetic fields, unexpectedly low frequencies, and high sensitivity to the superlattice filling fraction. The oscillations allow us to reconstruct the complex band structure in exquisite detail, revealing narrow moiré bands with multiple overlap** Fermi surfaces separated by unusually small momentum gaps. We identify distinct sets of oscillations that violate the textbook Onsager Fermi surface sum rule, signaling formation of exotic broad-band particle-hole superposition states induced by coherent magnetic breakdown. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: 30 pages, 5 main text figures, 6 supplementary figures

Journal ref: Science 383, 42-48 (2024)

Pair-density wave signature observed by x-ray scattering in La-based high-$T_{\rm c}$ cuprates

Authors: Jun-Sik Lee, Steven A. Kivelson, Tong Wang, Yoichi Ikeda, Takanori Taniguchi, Masaki Fujita, Chi-Chang Kao

Abstract: Suggestive, but indirect evidence of the existence of pair-density wave (PDW) order in several high-$T_{\rm c}$ cuprates has been reported. As this constitutes a new quantum phase of matter, it is important to {\it establish} its existence at least somewhere in the phase diagram. However, a direct correspondence between experiment and theory has remained elusive. Here, we report the observation of… ▽ More Suggestive, but indirect evidence of the existence of pair-density wave (PDW) order in several high-$T_{\rm c}$ cuprates has been reported. As this constitutes a new quantum phase of matter, it is important to {\it establish} its existence at least somewhere in the phase diagram. However, a direct correspondence between experiment and theory has remained elusive. Here, we report the observation of a theoretically predicted PDW {\it bulk} signature in two La-based cuprates, Sr-doped La$_{1.875}$Ba$_{0.125}$CuO$_4$ and Fe-doped La$_{1.87}$Sr$_{0.13}$CuO$_4$, through a comprehensive study that incorporates zero-magnetic field x-ray scattering, neutron scattering, and transport measurements. Specifically, we observe the emergence of so-called "1Q" order, which is to say subharmonic order associated with the charge-density wave (CDW) stripes, in a range of temperatures in which independent evidence suggests the co-existence of PDW long-range order and fluctuating uniform superconducting order. The subharmonic order is most pronounced around a half-integer $l$-vector, where the CDW diffraction peak is also strongest. This is consistent with the theoretical proposal that the cancellation of the Josephson coupling ("layer-decoupling"), is a signature of PDW order and that it is commensurately locked to the density wave stripes that are known to alternate orientation between adjacent layers. Even if the PDW is not the "mother of all state", it is at least a close relative -- possibly a second cousin. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Authors: Jordan Pack, Yinjie Guo, Ziyu Liu, Bjarke S. Jessen, Luke Holtzman, Song Liu, Matthew Cothrine, Kenji Watanabe, Takashi Taniguchi, David G. Mandrus, Katayun Barmak, James Hone, Cory R. Dean

Abstract: Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconducto… ▽ More Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole do** in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Exciton-exciton interactions in van der Waals heterobilayers

Authors: Alexander Steinhoff, Edith Wietek, Matthias Florian, Tommy Schulz, Takashi Taniguchi, Kenji Watanabe, Shen Zhao, Alexander Högele, Frank Jahnke, Alexey Chernikov

Abstract: Exciton-exciton interactions are key to understanding non-linear optical and transport phenomena in van der Waals heterobilayers, which emerged as versatile platforms to study correlated electronic states. We present a combined theory-experiment study of excitonic many-body effects based on first-principle band structures and Coulomb interaction matrix elements. Key to our approach is the explicit… ▽ More Exciton-exciton interactions are key to understanding non-linear optical and transport phenomena in van der Waals heterobilayers, which emerged as versatile platforms to study correlated electronic states. We present a combined theory-experiment study of excitonic many-body effects based on first-principle band structures and Coulomb interaction matrix elements. Key to our approach is the explicit treatment of the fermionic substructure of excitons and dynamical screening effects for density-induced energy renormalization and dissipation. We demonstrate that dipolar blue shifts are almost perfectly compensated by many-body effects, mainly by screening-induced self-energy corrections. Moreover, we identify a crossover between attractive and repulsive behavior at elevated exciton densities. Theoretical findings are supported by experimental studies of spectrally-narrow interlayer excitons in atomically-reconstructed, hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayers. Both theory and experiment show energy renormalization on a scale of a few meV even for high injection densities in the vicinity of the Mott transition. Our results revise the established picture of dipolar repulsion dominating exciton-exciton interactions in van der Waals heterostructures and open up opportunities for their external design. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Observation of Chern insulator in crystalline ABCA-tetralayer graphene with spin-orbit coupling

Authors: Yating Sha, Jian Zheng, Kai Liu, Hong Du, Kenji Watanabe, Takashi Taniguchi, **feng Jia, Zhiwen Shi, Ruidan Zhong, Guorui Chen

Abstract: Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, are susceptible to Coulomb interactions and can result into rich broken-symmetry states. In this work, we report a ferromagnetic state in charge neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent WSe2. The ferromagnetic state is further identified as a Chern insula… ▽ More Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, are susceptible to Coulomb interactions and can result into rich broken-symmetry states. In this work, we report a ferromagnetic state in charge neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent WSe2. The ferromagnetic state is further identified as a Chern insulator with Chern number of 4, and its Hall resistance reaches 78% and 100% quantization of h/4e2 at zero and 0.4 tesla, respectively. Three broken-symmetry insulating states, layer-antiferromagnet, Chern insulator and layer-polarized insulator and their transitions can be continuously tuned by the vertical displacement field. Remarkably, the magnetic order of the Chern insulator can be switched by three knobs, including magnetic field, electrical do**, and vertical displacement field. △ Less

Submitted 27 October, 2023; originally announced October 2023.

Large Quantum Anomalous Hall Effect in Spin-Orbit Proximitized Rhombohedral Graphene

Authors: Tonghang Han, Zhengguang Lu, Yuxuan Yao, Jixiang Yang, Junseok Seo, Chiho Yoon, Kenji Watanabe, Takashi Taniguchi, Liang Fu, Fan Zhang, Long Ju

Abstract: The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from other experimentally confirmed QAHE systems, this system has neither magnetic element nor moiré superlattice effect. The QAH states emerge at charge neutrality an… ▽ More The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from other experimentally confirmed QAHE systems, this system has neither magnetic element nor moiré superlattice effect. The QAH states emerge at charge neutrality and feature Chern numbers C = +-5 at temperatures up to about 1.5 K. This large QAHE arises from the synergy of the electron correlation in intrinsic flat bands of pentalayer graphene, the gate-tuning effect, and the proximity-induced Ising spin-orbit-coupling. Our experiment demonstrates the potential of crystalline two-dimensional materials for intertwined electron correlation and band topology physics, and may enable a route for engineering chiral Majorana edge states. △ Less

Submitted 26 April, 2024; v1 submitted 26 October, 2023; originally announced October 2023.

Comments: to be published in Science

Journal ref: Science 384, 647-651 (2024)

Localisation-to-delocalisation transition of moiré excitons in WSe$_2$/MoSe$_2$ heterostructures

Authors: Elena Blundo, Federico Tuzi, Salvatore Cianci, Marzia Cuccu, Katarzyna Olkowska-Pucko, Łucja Kipczak, Giorgio Contestabile, Antonio Miriametro, Marco Felici, Giorgio Pettinari, Takashi Taniguchi, Kenji Watanabe, Adam Babiński, Maciej R. Molas, Antonio Polimeni

Abstract: Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, $e.g.$, for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of a WSe$_2$/MoSe$_2$ HS from $T$=6 K to room… ▽ More Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, $e.g.$, for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of a WSe$_2$/MoSe$_2$ HS from $T$=6 K to room temperature using time-resolved and continuous-wave micro-photoluminescence, also under magnetic field. The exciton dynamics and emission lineshape evolution with temperature show clear signatures that MXs de-trap from the moiré potential and turn into free interlayer excitons (IXs) at $T\gtrsim$120 K. The MX-to-IX transition is also apparent from the exciton magnetic moment reversing its sign when the moiré potential is not capable to localise excitons at elevated temperatures. Concomitantly, the exciton formation and decay times reduce drastically. Thus, our findings establish the conditions for a truly confined nature of the exciton states in a moiré superlattice with increasing temperature. △ Less

Submitted 26 October, 2023; originally announced October 2023.

A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene

Authors: Josep Ingla-Aynés, Antonio L. R. Manesco, Talieh S. Ghiasi, Kenji Watanabe, Takashi Taniguchi, Herre S. J. van der Zant

Abstract: The achievement of valley-polarized electron currents is a cornerstone for the realization of valleytronic devices. Here, we report on ballistic coherent transport experiments where two opposite quantum point contacts (QPCs) are defined by electrostatic gating in a bilayer graphene (BLG) channel. By steering the ballistic currents with an out-of-plane magnetic field we observe two current jets, a… ▽ More The achievement of valley-polarized electron currents is a cornerstone for the realization of valleytronic devices. Here, we report on ballistic coherent transport experiments where two opposite quantum point contacts (QPCs) are defined by electrostatic gating in a bilayer graphene (BLG) channel. By steering the ballistic currents with an out-of-plane magnetic field we observe two current jets, a consequence of valley-dependent trigonal war**. Tuning the BLG carrier density and number of QPC modes (m) with a gate voltage we find that the two jets are present for m=1 and up to m=6, indicating the robustness of the effect. Semiclassical simulations which account for size quantization and trigonal war** of the Fermi surface quantitatively reproduce our data without fitting parameters, confirming the origin of the signals. In addition, our model shows that the ballistic currents collected for non-zero magnetic fields are valley-polarized independently of m, but their polarization depends on the magnetic field sign, envisioning such devices as ballistic current sources with tuneable valley-polarization. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Comments: 15 pages, 11 figures

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

Authors: Ankita Ram, Krishna Maity, Cédric Marchand, Aymen Mahmoudi, Aseem Rajan Kshirsagar, Mohamed Soliman, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Sven Reichardt, Ian O'Connor, Jean-Francois Dayen

Abstract: In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroe… ▽ More In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP$_2$S$_6$) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10$^6$ and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10$^4$. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10$^4$ seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Comments: 23 pages, 5 figures; Supporting Information: 12 pages, 6 figures

Symmetry-dependent dielectric screening of optical phonons in monolayer graphene

Authors: Loïc Moczko, Sven Reichardt, Aditya Singh, Xin Zhang, Luis E. Parra López, Joanna L. P. Wolff, Aditi Raman Moghe, Etienne Lorchat, Rajendra Singh, Kenji Watanabe, Takashi Taniguchi, Hicham Majjad, Michelangelo Romeo, Arnaud Gloppe, Ludger Wirtz, Stéphane Berciaud

Abstract: Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional syste… ▽ More Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional systems, in particular in graphene, where they appear as sharp kinks in the in-plane optical phonon branches. However, in spite of intense research efforts on electron-phonon coupling in graphene and related van der Waals heterostructures, little is known regarding the links between the symmetry properties of optical phonons at and near Kohn anomalies and their sensitivity towards the local environment. Here, using inelastic light scattering (Raman) spectroscopy, we investigate a set of custom-designed graphene-based van der Waals heterostructures, wherein dielectric screening is finely controlled at the atomic layer level. We demonstrate experimentally and explain theoretically that, depending exclusively on their symmetry properties, the two main Raman modes of graphene react differently to the surrounding environment. While the Raman-active near-zone-edge optical phonons in graphene undergo changes in their frequencies due to the neighboring dielectric environment, the in-plane, zone-centre optical phonons are symmetry-protected from the influence of the latter. These results shed new light on the unique electron-phonon coupling properties in graphene and related systems and provide invaluable guidelines to characterise dielectric screening in van der Waals heterostructures and moiré superlattices. △ Less

Submitted 20 October, 2023; originally announced October 2023.

Comments: 22 pages, main manuscript with 3 figures, appendix with 5 figures, supplemental material with 6 figures

Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

Authors: Yuxin Zhang, Haidong Tian, Huaixuan Li, Chiho Yoon, Ryan A. Nelson, Ziling Li, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Roland Kawakami, Joshua E. Goldberger, Fan Zhang, Chun Ning Lau

Abstract: Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compa… ▽ More Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large-scale synthesis. Here we demonstrate air-stable field-effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350μA/μm, and field effect mobilities 700 and 10,000 cm2/Vs at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Comments: 4 figures, In review

Detailed and high-throughput measurement of composition dependence of magnetoresistance and spin-transfer torque using a composition-gradient film: application to Co$_{x}$Fe$_{1-x}$ (0 $\le$ $\textit{x}$ $\le$ 1) system

Authors: Vineet Barwal, Hirofumi Suto, Tomohiro Taniguchi, Yuya Sakuraba

Abstract: We develop a high-throughput method for measuring the composition dependence of magnetoresistance (MR) and spin-transfer-torque (STT) effects in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices and report its application to the CoFe system. The method is based on the use of composition-gradient films deposited by combinatorial sputtering. This structure allows the fabricati… ▽ More We develop a high-throughput method for measuring the composition dependence of magnetoresistance (MR) and spin-transfer-torque (STT) effects in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices and report its application to the CoFe system. The method is based on the use of composition-gradient films deposited by combinatorial sputtering. This structure allows the fabrication of devices with different compositions on a single substrate, drastically enhancing the throughput in investigating composition dependence. We fabricated CPP-GMR devices on a single GMR film consisting of a Co$_{x}$Fe$_{1-x}$ (0 $\le$ $\textit{x}$ $\le$ 1) composition-gradient layer, a Cu spacer layer, and a NiFe layer. The MR ratio obtained from resistance-field measurements exhibited the maximum in the broad Co concentration range of 0.3 $\le$ $\textit{x}$ $\le$ 0.65. In addition, the STT efficiency was estimated from the current to induce magnetization reversal of the NiFe layer by spin injection from the Co$_{x}$Fe$_{1-x}$ layer. The STT efficiency was also the highest around the same Co concentration range as for the MR ratio, and this correlation was theoretically explained by the change in the spin polarization of the Co$_{x}$Fe$_{1-x}$ layer. The results revealed the Co$_{x}$Fe$_{1-x}$ composition range suitable for spintronic applications, demonstrating the advantages of the developed method. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Comments: 19 pages, 5 figures

Journal ref: Science and Technology of Advanced Materials: Methods, 3(1), (2023)

Electrically-driven amplification of terahertz acoustic waves in graphene

Authors: Aaron H. Barajas-Aguilar, Jasen Zion, Ian Sequeira, Andrew Z. Barabas, Takashi Taniguchi, Kenji Watanabe, Eric Barrett, Thomas Scaffidi, Javier D. Sanchez-Yamagishi

Abstract: In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under this condition, the electronic system can efficiently amplify acoustic phonons, leading to the exponential growth of sound waves in the direction of the carrier flow. Here, we demonstrate that such phonon amplification can significantly modify the electrical pro… ▽ More In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under this condition, the electronic system can efficiently amplify acoustic phonons, leading to the exponential growth of sound waves in the direction of the carrier flow. Here, we demonstrate that such phonon amplification can significantly modify the electrical properties of graphene devices. We observe a super-linear growth of the resistivity in the direction of the carrier flow when the drift velocity exceeds the speed of sound, causing up to a 7 times increase over 8 micrometers. The resistance growth is observable for carrier densities away from the Dirac point and is enhanced at cryogenic temperatures. These observations are explained by a theoretical model for the electrical-amplification of acoustic phonons, which reach frequencies up to 2.2 terahertz with the nanoscale wavelength set by gate-tunable ~kF transitions across the Fermi surface. These findings offer a route to high-frequency on-chip sound generation and detection, which can be used to modulate and probe electronic physics in van der Waals heterostructures in the terahertz frequency range. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Helical trilayer graphene: a moiré platform for strongly-interacting topological bands

Authors: Li-Qiao Xia, Sergio C. de la Barrera, Aviram Uri, Aaron Sharpe, Yves H. Kwan, Ziyan Zhu, Kenji Watanabe, Takashi Taniguchi, David Goldhaber-Gordon, Liang Fu, Trithep Devakul, Pablo Jarillo-Herrero

Abstract: Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE requires a coexistence of Berry curvature and spontaneous time-reversal symmetry breaking. These conditions can be realized in two-dimensional moiré systems wit… ▽ More Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE requires a coexistence of Berry curvature and spontaneous time-reversal symmetry breaking. These conditions can be realized in two-dimensional moiré systems with broken $xy$-inversion symmetry ($C_{2z}$) that host flat electronic bands. Here, we explore helical trilayer graphene (HTG), three graphene layers twisted sequentially by the same angle forming two misoriented moiré patterns. Although HTG is globally $C_{2z}$-symmetric, surprisingly we observe clear signatures of topological bands. At a magic angle $θ_\mathrm{m}\approx 1.8^\circ$, we uncover a robust phase diagram of correlated and magnetic states using magnetotransport measurements. Lattice relaxation leads to large periodic domains in which $C_{2z}$ is broken on the moiré scale. Each domain harbors flat topological bands with valley-contrasting Chern numbers $\pm(1,-2)$. We find correlated states at integer electron fillings per moiré unit cell $ν=1,2,3$ and fractional fillings $2/3,7/2$ with the AHE arising at $ν=1,3$ and $2/3,7/2$. At $ν=1$, a time-reversal symmetric phase appears beyond a critical electric displacement field, indicating a topological phase transition. Finally, hysteresis upon swee** $ν$ points to first-order phase transitions across a spatial mosaic of Chern domains separated by a network of topological gapless edge states. We establish HTG as an important platform that realizes ideal conditions for exploring strongly interacting topological phases and, due to its emergent moiré-scale symmetries, demonstrates a novel way to engineer topology. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Tuning the supercurrent distribution in parallel ballistic graphene Josephson junctions

Authors: Philipp Schmidt, Luca Banszerus, Benedikt Frohn, Stefan Blien, Kenji Watanabe, Takashi Taniguchi, Andreas K. Hüttel, Bernd Beschoten, Fabian Hassler, Christoph Stampfer

Abstract: We report on a ballistic and fully tunable Josephson junction system consisting of two parallel ribbons of graphene in contact with superconducting MoRe. By electrostatic gating of the two individual graphene ribbons we gain control over the real space distribution of the superconducting current density, which can be continuously tuned between both ribbons. We extract the respective gate dependent… ▽ More We report on a ballistic and fully tunable Josephson junction system consisting of two parallel ribbons of graphene in contact with superconducting MoRe. By electrostatic gating of the two individual graphene ribbons we gain control over the real space distribution of the superconducting current density, which can be continuously tuned between both ribbons. We extract the respective gate dependent spatial distributions of the real space current density by employing Fourier- and Hilbert transformations of the magnetic field induced modulation of the critical current. This approach is fast and does not rely on a symmetric current profile. It is therefore a universally applicable tool, potentially useful for carefully adjusting Josephson junctions. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Journal ref: Phys. Rev. Applied 20, 054049 (2023)

Moire synaptic transistor for homogeneous-architecture reservoir computing

Authors: Pengfei Wang, Moyu Chen, Yongqin Xie, Chen Pan, Kenji Watanabe, Takashi Taniguchi, Bin Cheng, Shi-Jun Liang, Feng Miao

Abstract: Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times lar… ▽ More Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times larger than the atomic length scale, is one type of most studied artificial quantum materials in community of material science and condensed-matter physics over the past years. These materials are featured with gate-tunable periodic potential and electronic correlation, thus varying the electric field allows the electrons in the moire potential per unit cell to exhibit distinct and reproducible dynamics, showing great promise in robust reservoir computing. Here, we report that a moire synaptic transistor can be used to implement the reservoir computing system with a homogeneous reservoir-readout architecture. The synaptic transistor is fabricated based on a h-BN/bilayer graphene/h-BN moire heterostructure, exhibiting ferroelectricity-like hysteretic gate voltage dependence of resistance. Varying the magnitude of the gate voltage enables the moire transistor to be switched between long-term memory and short-term memory with nonlinear dynamics. By employing the short- and long-term memory as the reservoir nodes and weights of the readout layer, respectively, we construct a full-moire physical neural network and demonstrate that the classification accuracy of 90.8% can be achieved for the MNIST handwritten digit database. Our work would pave the way towards the development of neuromorphic computing based on the moire materials. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Journal ref: Chin. Phys. Lett. 2023 40 (11): 117201

Controlling Umklapp scattering in bilayer graphene moir'e superlattice

Authors: Mohit Kumar Jat, Shubhankar Mishra, Harsimran Kaur Mann, Robin Bajaj, Kenji Watanabe, Takashi Taniguchi, H. R. Krishnamurthy, Manish Jain, Aveek Bid

Abstract: In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from… ▽ More In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from electron-electron Umklapp (Uee) scattering, making the resistance of graphene/hBN moir'e devices significantly larger than that of non-aligned devices (where Uee is forbidden). We quantify the strength of the Uee scattering and find that it follows a universal scaling with Fermi energy and has a non-monotonic dependence on the charge carrier density. The Uee scattering is strongly electric field tunable and affected by layer-polarization of BLG. It has a strong particle-hole asymmetry - the resistance when the chemical potential is in the conduction band is significantly lesser than when it is in the valence band, making the electron-doped regime more practical for potential applications. △ Less

Submitted 15 February, 2024; v1 submitted 13 October, 2023; originally announced October 2023.

Comments: Comments and suggestion are welcome

Journal ref: Nano Letters (2024)

Electrical noise spectroscopy of magnons in a quantum Hall ferromagnet

Authors: Ravi Kumar, Saurabh Kumar Srivastav, Ujjal Roy, **hong Park, Christian Spanslatt, K. Watanabe, T. Taniguchi, Yuval Gefen, Alexander D. Mirlin, Anindya Das

Abstract: Collective spin-wave excitations-magnons-in a quantum Hall ferromagnet are promising quasi-particles for next-generation spintronics devices, including platforms for information transfer. Detection of these charge-neutral excitations relies on the conversion of magnons into electrical signals in the form of excess electrons and holes, but if these signals are equal the magnon detection remains elu… ▽ More Collective spin-wave excitations-magnons-in a quantum Hall ferromagnet are promising quasi-particles for next-generation spintronics devices, including platforms for information transfer. Detection of these charge-neutral excitations relies on the conversion of magnons into electrical signals in the form of excess electrons and holes, but if these signals are equal the magnon detection remains elusive. In this work, we overcome this shortcoming by measuring the electrical noise generated by magnons. We use the symmetry-broken quantum Hall ferromagnet of the zeroth Landau level in graphene to launch magnons. Absorption of these magnons creates excess noise above the Zeeman energy and remains finite even when the average electrical signal is zero. Moreover, we formulate a theoretical model in which the noise is generated by equilibration (partial or full, depending on the bias voltage) between edge channels and propagating magnons. Our model, which agrees with experimental observations, also allows us to pinpoint the regime of ballistic magnon transport in our device. △ Less

Submitted 12 October, 2023; originally announced October 2023.

Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons

Authors: L. Abou-Hamdan, A. Schmitt, R. Bretel, S. Rossetti, M. Tharrault, D. Mele, A. Pierret, M. Rosticher, T. Taniguchi, K. Watanabe, C. Maestre, C. Journet, B. Toury, V. Garnier, P. Steyer, J. H. Edgar, E. Janzen, J-M. Berroir, G. Fève, G. Ménard, B. Plaçais, C. Voisin, J-P. Hugonin, E. Bailly, B. Vest , et al. (4 additional authors not shown)

Abstract: Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations ca… ▽ More Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process. △ Less

Submitted 8 July, 2024; v1 submitted 12 October, 2023; originally announced October 2023.

Comments: 30 pages including Extended Data and Supplementary Material (Main text: 8 pages, 4 figures)

Spin and Valley Polarized Multiple Fermi Surfaces of α-RuCl$_3$/Bilayer Graphene Heterostructure

Authors: Soyun Kim, Jeonghoon Hong, Kenji Watanabe, Takashi Taniguchi, Joseph Falson, Jeongwoo Kim, Youngwook Kim

Abstract: We report the transport properties of $α$-RuCl$_3$/bilayer graphene heterostructures, where carrier do** is induced by a work function difference, resulting in distinct electron and hole populations in $α$-RuCl3 and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant ban… ▽ More We report the transport properties of $α$-RuCl$_3$/bilayer graphene heterostructures, where carrier do** is induced by a work function difference, resulting in distinct electron and hole populations in $α$-RuCl3 and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant band modifications within the system. In particular, we observe the emergence of spin and valley polarized multiple hole-type Fermi pockets, originating from the spin-selective band hybridization between $α$-RuCl$_3$ and bilayer graphene, breaking the spin degree of freedom. Unlike $α$-RuCl$_3$ /monolayer graphene system, the presence of different hybridization strengths between $α$-RuCl$_3$ and the top and bottom graphene layers leads to an asymmetric behavior of the two layers, confirmed by effective mass experiments, resulting in the manifestation of valley-polarized Fermi pockets. These compelling findings establish $α$-RuCl$_3$ proximitized to bilayer graphene as an outstanding platform for engineering its unique low-energy band structure. △ Less

Submitted 11 October, 2023; originally announced October 2023.

Comments: accepted to APL

Journal ref: APL 123, 173101 (2023)

Nanoparticle Stressor-Induced Single-photon Sources in Monolayer WS$_2$ Emitting into a Narrowband Visible Spectral Range

Authors: J. Thoppil S, Y. Waheed, S. Shit, I. D. Prasad, K. Watanabe, T. Taniguchi, S. Kumar

Abstract: A van der Waals heterostructure containing an atomically thin monolayer transition-metal dichalcogenide as a single-photon emitting layer is emerging as an intriguing solid-state quantum-photonic platform. Here, we report the utilization of spin-coating of silica nanoparticles for deterministically creating the spectrally isolated, energetically stable, and narrow-linewidth single-photon emitters… ▽ More A van der Waals heterostructure containing an atomically thin monolayer transition-metal dichalcogenide as a single-photon emitting layer is emerging as an intriguing solid-state quantum-photonic platform. Here, we report the utilization of spin-coating of silica nanoparticles for deterministically creating the spectrally isolated, energetically stable, and narrow-linewidth single-photon emitters in ML-WS$_2$. We also demonstrate that long-duration low-temperature annealing of the photonic heterostructure in the vacuum removes the energetically unstable emitters that are present due to fabrication-associated residue and lead to the emission of single-photons in a <25 nm narrowband visible spectral range centered at $\sim$620 nm. This work may pave the way toward realizing a hybrid-quantum-photonic platform containing a van der Waals heterostructure/device and an atomic-vapor system emitting/absorbing in the same visible spectral range. △ Less

Submitted 11 October, 2023; originally announced October 2023.

Comments: 5 figures