Enabling High-Power, Broadband THz Generation with 800-nm Pump Wavelength
Authors:
Zachary B. Zaccardi,
Isaac C. Tangen,
Gabriel A. Valdivia-Berroeta,
Charles B. Bahr,
Karissa C. Kenney,
Claire Rader,
Matthew J. Lutz,
Brittan P. Hunter,
David J. Michaelis,
Jeremy A. Johnson
Abstract:
The organic terahertz (THz) generation crystal BNA has recently gained traction as a valuable source to produce broadband THz pulses. Even when pumped with 800-nm light, thin BNA crystals can produce relatively high electric fields with frequency components out to 5 THz. However, the THz output when pumped with 800-nm light is limited by the damage threshold of the organic crystal. Here we report…
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The organic terahertz (THz) generation crystal BNA has recently gained traction as a valuable source to produce broadband THz pulses. Even when pumped with 800-nm light, thin BNA crystals can produce relatively high electric fields with frequency components out to 5 THz. However, the THz output when pumped with 800-nm light is limited by the damage threshold of the organic crystal. Here we report that the damage threshold of BNA can be significantly improved by physically bonding BNA to a high-thermal conductivity sapphire window. When pumped with 800-nm light from an amplified Ti:sapphire laser system, our bonded BNA (BNA-sapphire) generates 2.5 times higher electric field strengths compared to bare BNA crystals. We characterize the average damage threshold for bare BNA and BNA-sapphire, measure peak-to-peak electric field strengths and THz waveforms, and determine the nonlinear transmission in BNA. Pum** BNA-sapphire with 800-nm light results in peak-to-peak electric fields exceeding 1 MV/cm, with strong broadband frequency components from 0.5-5 THz. Our BNA-sapphire THz source is a promising alternative to tilted pulse front LiNbO3 THz sources, which will enable many research groups without optical parametric amplifiers to perform high-field, broadband THz spectroscopy.
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Submitted 5 October, 2020;
originally announced October 2020.
Comprehensive Characterization of Terahertz Generation with the Organic Crystal BNA
Authors:
Isaac C. Tangen,
Gabriel A. Valdivida-Berroeta,
Larry K. Heki,
Zachary B. Zaccardi,
Erika W. Jackson,
Charles B. Bahr,
David J. Michaelis,
Jeremy A. Johnson
Abstract:
We characterize the terahertz (THz) generation of N-benzyl-2-methyl-4-nitroaniline (BNA), with crystals ranging in thickness from 123-700 μm. We compare excitation using 800-nm and 1250 to 1500-nm wavelengths. Pum** BNA with 800-nm wavelengths and longer near-infrared wavelengths results in a broad spectrum, producing out to 6 THz using a 100-fs pump, provided the BNA crystal is thin enough. ~20…
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We characterize the terahertz (THz) generation of N-benzyl-2-methyl-4-nitroaniline (BNA), with crystals ranging in thickness from 123-700 μm. We compare excitation using 800-nm and 1250 to 1500-nm wavelengths. Pum** BNA with 800-nm wavelengths and longer near-infrared wavelengths results in a broad spectrum, producing out to 6 THz using a 100-fs pump, provided the BNA crystal is thin enough. ~200 μm or thinner crystals are required to produce a broad spectrum with an 800-nm pump, whereas ~300 μm thick crystals are optimal for broadband THz generation using the longer wavelengths. We report the favorable THz generation and optical characteristics of our BNA crystals that make them attractive for broadband, high-field THz generation, and we also find significant differences to BNA results reported in other works.
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Submitted 13 July, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
