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Orbital origin of magnetic moment enhancement induced by charge density wave in kagome FeGe
Authors:
Shulun Han,
Linyang Li,
Chi Sin Tang,
Qi Wang,
Lingfeng Zhang,
Caozheng Diao,
Mingwen Zhao,
Shuo Sun,
Lijun Tian,
Mark B. H. Breese,
Chuanbing Cai,
Milorad V. Milosevic,
Yanpeng Qi,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Interactions among various electronic states such as CDW, magnetism, and superconductivity are of high significance in strongly correlated systems. While significant progress has been made in understanding the relationship between CDW and superconductivity, the interplay between CDW and magnetic order remains largely elusive. Kagome lattices, which intertwine nontrivial topology, charge order, and…
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Interactions among various electronic states such as CDW, magnetism, and superconductivity are of high significance in strongly correlated systems. While significant progress has been made in understanding the relationship between CDW and superconductivity, the interplay between CDW and magnetic order remains largely elusive. Kagome lattices, which intertwine nontrivial topology, charge order, and magnetism, offer an ideal platform for such studies. The kagome magnet FeGe, hosting the unique coupling between CDW and magnetism, has recently garnered considerable attention in that respect. Here we reveal the significant role of the orbital coupling effect during the CDW phase transition, highlighting the orbital origin of the magnetic moment enhancement in FeGe. Our X ray absorption experiments and first principles calculations illuminate the temperature dependent behavior of Fe3d_Ge4p orbital hybridization and corroborate its pivotal impact on the magnetic properties of FeGe. These findings introduce an orbital dimension to the correlation between charge and magnetic degrees of freedom, advancing our understanding of the intriguing quantum phases resulting from this interplay.
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Submitted 1 July, 2024;
originally announced July 2024.
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Unraveling Anisotropic Hybridizations of Solid-state Electrolyte Nano-films in Li-ion Batteries
Authors:
Yuanjie Ning,
Wenjun Wu,
Liang Dai,
Shuo Sun,
Zhigang Zeng,
Dengsong Zhang,
Mark B. H. Breese,
Chuanbing Cai,
Chi Sin Tang,
Xinmao Yin
Abstract:
Li2WO4 (LWO) is recognized for its potential as a solid-state electrolyte and it has demonstrated the ability to enhance the electrochemical performance of LiCoO2 (LCO) cathodes in Li-ion batteries. However, prior investigations into LWO have predominantly involved polycrystalline structures, thereby lacking a comprehensive understanding of its behavior when interfaced with single crystal systems,…
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Li2WO4 (LWO) is recognized for its potential as a solid-state electrolyte and it has demonstrated the ability to enhance the electrochemical performance of LiCoO2 (LCO) cathodes in Li-ion batteries. However, prior investigations into LWO have predominantly involved polycrystalline structures, thereby lacking a comprehensive understanding of its behavior when interfaced with single crystal systems, particularly those intricately connected to LCO. In this study, we employ pulsed laser deposition (PLD) to epitaxially synthesize LWO nano-films on LCO layers with different orientations. Based on a series of high-resolution synchrotron-based techniques including X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS), the electronic structure of LWO is carefully scrutinized where a higher main energy level of W5d(eg)-O2p orbitals hybridization in LWO/LCO(104) as compared to LWO/LCO(003) has been observed. This experimental finding is further validated by a comprehensive set of density of states calculations. Furthermore, detailed polarized XAS characterization unveils distinct anisotropy between the two oriented LWO configurations. This comprehensive scientific investigation, harnessing the capabilities of synchrotron-based techniques, provides invaluable insights for future studies, offering guidance for the optimized utilization of LWO as a solid-state electrolyte or modification layer for LCO cathodes in high-powered Li-ion batteries.
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Submitted 12 May, 2024;
originally announced May 2024.
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Tunable Collective Excitations in Epitaxial Perovskite Nickelates
Authors:
Mengxia Sun,
Xu He,
Mingyao Chen,
Chi Sin Tang,
Xiongfang Liu,
Liang Dai,
Jishan Liu,
Zhigang Zeng,
Shuo Sun,
Mark B. H. Breese,
Chuanbing Cai,
Yingge Du,
Le Wang,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation…
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The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation of conventional metallic and correlated plasmons in epitaxial La1-xSrxNiO3 (LSNO) films with varying Sr do** concentrations (x = 0, 0.125, 0.25), unveiling their intriguing evolution. Unlike samples at other do** concentrations, the x = 0.125 intermediate do** sample does not exhibit the correlated plasmons despite showing high optical conductivity. Through a comprehensive experimental investigation using spectroscopic ellipsometry and X-ray absorption spectroscopy, the O2p-Ni3d orbital hybridization for LSNO with a do** concentration of x = 0.125 is found to be significantly enhanced, alongside a considerable weakening of its effective correlation U*. These factors account for the absence of correlated plasmons and the high optical conductivity observed in LSNO (0.125). Our results underscore the profound impact of orbital hybridization on the electronic structure and the formation of plasmon in strongly-correlated systems. This in turn suggest that LSNO could serve as a promising alternative material in optoelectronic devices.
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Submitted 1 June, 2024; v1 submitted 29 April, 2024;
originally announced April 2024.
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Realization of a Two-Dimensional Lieb Lattice in a Metal-Inorganic Framework with Flat Bands and Topological Edge States
Authors:
Wenjun Wu,
Shuo Sun,
Chi Sin Tang,
**g Wu,
Yu Ma,
Lingfeng Zhang,
Chuanbing Cai,
Jianxin Zhong,
Milorad V. Milošević,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Flat bands and Dirac cones in materials are at the source of the exotic electronic and topological properties. The Lieb lattice is expected to host these electronic structures, arising from quantum destructive interference. Nevertheless, the experimental realization of a two-dimensional Lieb lattice remained challenging to date due to its intrinsic structural instability. After computationally des…
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Flat bands and Dirac cones in materials are at the source of the exotic electronic and topological properties. The Lieb lattice is expected to host these electronic structures, arising from quantum destructive interference. Nevertheless, the experimental realization of a two-dimensional Lieb lattice remained challenging to date due to its intrinsic structural instability. After computationally designing a Platinum-Phosphorus (Pt-P) Lieb lattice, we have successfully overcome its structural instability and synthesized it on a gold substrate via molecular beam epitaxy. Low-temperature scanning tunneling microscopy and spectroscopy verified the Lieb lattice's morphology and electronic flat bands. Furthermore, topological Dirac edge states stemming from pronounced spin-orbit coupling induced by heavy Pt atoms have been predicted. These findings convincingly open perspectives for creating metal-inorganic framework-based atomic lattices, offering prospects for strongly correlated phases interplayed with topology.
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Submitted 29 April, 2024;
originally announced April 2024.
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Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures
Authors:
Mingyao Chen,
Huimin Liu,
Xu He,
Minjuan Li,
Chi Sin Tang,
Mengxia Sun,
Krishna Prasad Koirala,
Mark E. Bowden,
Yangyang Li,
Xiongfang Liu,
Difan Zhou,
Shuo Sun,
Mark B. H. Breese,
Chuanbing Cai,
Yingge Du,
Andrew T. S. Wee,
Le Wang,
Xinmao Yin
Abstract:
The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown…
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The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown on a series of single crystal substrates. Unlike films synthesized on other substrates, NdNiO3 on SrTiO3 (NNO/STO) gives rise to a unique band structure which features an additional unoccupied band situated above the Fermi level. Our comprehensive investigation, which incorporated a wide array of experimental techniques and density functional theory calculations, revealed that the emergence of the interfacial band structure is primarily driven by the orbital hybridization between Ti 3d orbitals of the STO substrate and O 2p orbitals of the NNO thin film. Furthermore, exciton peaks have been detected in the optical spectra of the NNO/STO film, attributable to the pronounced electron-electron (e-e) and electron-hole (e-h) interactions propagating from the STO substrate into the NNO film. These findings underscore the substantial influence of interfacial orbital hybridization on the electronic structure of oxide thin-films, thereby offering key insights into tuning their interfacial properties.
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Submitted 29 April, 2024;
originally announced April 2024.
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On the origin of topotactic reduction effect for superconductivity in infinite-layer nickelates
Authors:
Shengwei Zeng,
Chi Sin Tang,
Zhaoyang Luo,
Lin Er Chow,
Zhi Shiuh Lim,
Saurav Prakash,
** Yang,
Caozheng Diao,
Xiaojiang Yu,
Zhenxiang Xing,
Rong Ji,
Xinmao Yin,
Changjian Li,
X. Renshaw Wang,
Qian He,
Mark B. H. Breese,
A. Ariando,
Huajun Liu
Abstract:
Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic r…
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Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic reconstruction and electronic structures -- crucial for superconductivity -- remains largely unresolved. We design two sets of control Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ thin films and implement secondary ion mass spectroscopy to highlight the absence of reduction-induced hydrogen intercalation. X-ray absorption spectroscopy shows a significant linear dichroism with dominant Ni 3d$_{x2{-}y2}$ orbitals on superconducting samples, indicating a Ni single-band nature of infinite-layer nickelates. Consistent with the superconducting $T_c$, the Ni 3d orbitals asymmetry manifests a dome-like reduction duration dependence. Our results unveil the critical role of reduction in modulating the Ni-3d orbital polarization and its impact on the superconducting properties.
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Submitted 1 March, 2024;
originally announced March 2024.
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Optical detection of small polarons in vanadium dioxide and their critical role in mediating metal-insulator transition
Authors:
Xiongfang Liu,
Tong Yang,
**g Wu,
Mengxia Sun,
Mingyao Chen,
Chi Sin Tang,
Kun Han,
Difan Zhou,
Shengwei Zeng,
Shuo Sun,
Sensen Li,
Ming Yang,
Mark B. H. Breese,
Chuanbing Cai,
Thirumalai Venkatesan,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic…
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In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We demonstrate that polaron dynamics play a complementary role in facilitating Peierls and Mott transitions to contribute to the MIT processes. Moreover, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film provide valuable insights into their electron structures. This study provides an understanding of the MIT mechanism in correlated systems and highlights how polarons, lattice distortions and electron correlations facilitate the phase transition processes in strongly-correlated systems, while further inspiring the development of new device functionalities.
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Submitted 28 December, 2023;
originally announced December 2023.
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Self-passivated freestanding superconducting oxide film for flexible electronics
Authors:
Zhuoyue Jia,
Chi Sin Tang,
**g Wu,
Changjian Li,
Wanting Xu,
Kairong Wu,
Difan Zhou,
** Yang,
Shengwei Zeng,
Zhigang Zeng,
Dengsong Zhang,
Ariando Ariando,
Mark B. H. Breese,
Chuanbing Cai,
Xinmao Yin
Abstract:
The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Fre…
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The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Freestanding YBCO film on a polydimethylsiloxane substrate is extracted by etching the Sr3Al2O6 sacrificial layer from the LaAlO3 substrate. In addition to the obtained freestanding YBCO thin film having a Tc of 89.1 K, the freestanding YBCO thin films under inward and outward bending conditions have Tc of 89.6 K and 88.9 K, respectively. A comprehensive characterization involving multiple experimental techniques including high-resolution transmission electron microscopy, scanning electron microscopy, Raman and X-ray Absorption Spectroscopy is conducted to investigate the morphology, structural and electronic properties of the YBCO film before and after the extraction process where it shows the preservation of the structural and superconductive properties of the freestanding YBCO virtually in its pristine state. Further investigation reveals the formation of a YBCO passivated layer serves as a protective layer which effectively preserves the inner section of the freestanding YBCO during the etching process. This work plays a key role in actualizing the fabrication of flexible oxide thin films and opens up new possibilities for a diverse range of device applications involving thin-films and low-dimensional materials.
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Submitted 6 July, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Direct observation of two-dimensional small polarons at correlated oxide interface
Authors:
Chi Sin Tang,
Shengwei Zeng,
**g Wu,
Shunfeng Chen,
Dongsheng Song,
Milošević,
** Yang,
Caozheng Diao,
Jun Zhou,
Stephen J. Pennycook,
Mark B. H. Breese,
Chuanbing Cai,
Thirumalai Venkatesan,
Ariando Ariando,
Ming Yang,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution…
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Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution spectroscopic ellipsometry.First-principles investigations further reveals that strong coupling between the interfacial electrons and the Ti-lattice result in the formation of localized 2D small polarons.These findings resolve the longstanding issue where the excess experimentally measured interfacial carrier density is significantly lower than theoretically predicted values.The charge-phonon induced lattice distortion further provides an analogue to the superconductive states in magic-angle twisted bilayer graphene attributed to the many-body correlations induced by broken periodic lattice symmetry.Our study sheds light on the multifaceted complexity of broken periodic lattice induced quasi-particle effects and its relationship with superconductivity.
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Submitted 6 July, 2023; v1 submitted 25 October, 2022;
originally announced October 2022.
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Two-Dimensional Charge Localization at the Perovskite Oxide Interface
Authors:
Chi Sin Tang,
Shengwei Zeng,
Caozheng Diao,
**g Wu,
Shunfeng Chen,
Mark B. H. Breese,
Chuanbing Cai,
Ariando Ariando,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
The effects of atomic-scale disorder and charge (de)localization holds significant importance,and they provide essential insights in unravelling the role that strong and weak correlations play in condensed matter systems.For perovskite oxide heterostructures,while disorders introduced via various external stimuli have strong influences on the (de)localization of the interfacial two-dimensional (2D…
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The effects of atomic-scale disorder and charge (de)localization holds significant importance,and they provide essential insights in unravelling the role that strong and weak correlations play in condensed matter systems.For perovskite oxide heterostructures,while disorders introduced via various external stimuli have strong influences on the (de)localization of the interfacial two-dimensional (2D) electrons, these factors alone could not fully account for the system's charge dynamics where interfacial hybridization holds very strong influence.Here, we determine that the displaced 2D free electrons are localized in the specific hybridized states at the LaAlO3/SrTiO3(LAO/STO) interface.This experimental study combines both transport measurements and temperature-dependent X-ray absorption spectroscopy and suggests the localization of 2D electrons can be induced via temperature reduction or ionic liquid gating and it applies to both amorphous and crystalline interfacial systems.Specifically, we demonstrate that interfacial hybridization plays a pivotal role in regulating the 2D electron localization effects.Our study resolves the location where the 2D electrons are localized and highlights the importance of interfacial hybridization and opens further scientific investigation of its influence on 2D charge localization in oxide heterointerfaces.
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Submitted 25 October, 2022;
originally announced October 2022.
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Orbital hybridization-driven charge density wave transition in CsV3Sb5 kagome superconductor
Authors:
Shulun Han,
Chi Sin Tang,
Linyang Li,
Yi Liu,
Huimin Liu,
Jian Gou,
**g Wu,
Difan Zhou,
** Yang,
Caozheng Diao,
Jiacheng Ji,
**ke Bao,
Lingfeng Zhang,
Mingwen Zhao,
M. V. Milošević,
Yanqun Guo,
Lijun Tian,
Mark B. H. Breese,
Guanghan Cao,
Chuanbing Cai,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Owing to its inherent non-trivial geometry, the unique structural motif of the recently discovered Kagome topological superconductor AV3Sb5 is an ideal host of diverse topologically non-trivial phenomena, including giant anomalous Hall conductivity, topological charge order, charge density wave, and unconventional superconductivity. Despite possessing a normal-state CDW order in the form of topolo…
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Owing to its inherent non-trivial geometry, the unique structural motif of the recently discovered Kagome topological superconductor AV3Sb5 is an ideal host of diverse topologically non-trivial phenomena, including giant anomalous Hall conductivity, topological charge order, charge density wave, and unconventional superconductivity. Despite possessing a normal-state CDW order in the form of topological chiral charge order and diverse superconducting gaps structures, it remains unclear how fundamental atomic-level properties and many-body effects including Fermi surface nesting, electron-phonon coupling, and orbital hybridization contribute to these symmetry-breaking phenomena. Here, we report the direct participation of the V3d-Sb5p orbital hybridization in mediating the CDW phase transition in CsV3Sb5. The combination of temperature-dependent X-ray absorption and first principles studies clearly indicate the Inverse Star of David structure as the preferred reconstruction in the low-temperature CDW phase. Our results highlight the critical role that Sb orbitals plays and establish orbital hybridization as the direct mediator of the CDW states and structural transition dynamics in Kagome unconventional superconductors. This is a significant step towards the fundamental understanding and control of the emerging correlated phases from the Kagome lattice through the orbital interactions and provide promising approaches to novel regimes in unconventional orders and topology.
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Submitted 8 December, 2022; v1 submitted 23 October, 2022;
originally announced October 2022.
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Room-temperature ferromagnetism at an oxide/nitride interface
Authors:
Qiao **,
Zhiwen Wang,
Qinghua Zhang,
Yonghong Yu,
Shan Lin,
Shengru Chen,
Mingqun Qi,
He Bai,
Qian Li,
Le Wang,
Xinmao Yin,
Chi Sin Tang,
Andrew T. S. Wee,
Fanqi Meng,
Jiali Zhao,
Jia-Ou Wang,
Haizhong Guo,
Chen Ge,
Can Wang,
Wensheng Yan,
Tao Zhu,
Lin Gu,
Scott A. Chambers,
Sujit Das,
Gang-Qin Liu
, et al. (4 additional authors not shown)
Abstract:
Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unkn…
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Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.
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Submitted 25 November, 2021;
originally announced November 2021.
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Exchange coupling in synthetic anion-engineered chromia heterostructures
Authors:
Shan Lin,
Zhiwen Wang,
Qinghua Zhang,
Shengru Chen,
Qiao **,
Hongbao Yao,
Shuai Xu,
Fanqi Meng,
Xinmao Yin,
Can Wang,
Chen Ge,
Haizhong Guo,
Chi Sin Tang,
Andrew T. S. Wee,
Lin Gu,
Kui-juan **,
Hongxin Yang,
Er-Jia Guo
Abstract:
Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-do** is proposed to be another effect means to…
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Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-do** is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen do**. Unlike antiferromagnetic monoanionic chromium oxide and nitride phases, chromium oxynitride exhibits a robust ferromagnetic and insulating state, as demonstrated by the combination of multiple magnetization probes and theoretical calculations. With increasing the nitrogen content, the crystal structure of chromium oxynitride transits from trigonal (R3c) to tetragonal (4mm) phase and its saturation magnetization reduces significantly. Furthermore, we achieve a large and controllable exchange bias field in the chromia heterostructures by synthetic anion engineering. This work reflects the anion engineering in functional oxides towards the potential applications in giant magnetoresistance and tunnelling junctions of modern magnetic sensors and read heads.
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Submitted 20 November, 2021;
originally announced November 2021.
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Superconductivity in infinite-layer nickelate La$_{1-x}$Ca$_x$NiO$_2$ thin films
Authors:
S. W. Zeng,
C. J. Li,
L. E. Chow,
Y. Cao,
Z. T. Zhang,
C. S. Tang,
X. M. Yin,
Z. S. Lim,
J. X. Hu,
P. Yang,
A. Ariando
Abstract:
We report the observation of superconductivity in infinite-layer Ca-doped LaNiO$_2$ (La$_{1-x}$Ca$_x$NiO$_2$) thin films and construct their phase diagram. Unlike the metal-insulator transition in Nd- and Pr-based nickelates, the undoped and underdoped La1-xCaxNiO2 thin films are entirely insulating from 300 K down to 2 K. A superconducting dome is observed at 0.15<x<0.3 with weakly insulating beh…
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We report the observation of superconductivity in infinite-layer Ca-doped LaNiO$_2$ (La$_{1-x}$Ca$_x$NiO$_2$) thin films and construct their phase diagram. Unlike the metal-insulator transition in Nd- and Pr-based nickelates, the undoped and underdoped La1-xCaxNiO2 thin films are entirely insulating from 300 K down to 2 K. A superconducting dome is observed at 0.15<x<0.3 with weakly insulating behavior at the overdoped regime. Moreover, the sign of the Hall coefficient $R_H$ changes at low temperature for samples with a higher do** level. However, distinct from the Nd- and Pr-based nickelates, the $R_H$-sign-change temperature remains at around 35 K as the do** increases, which begs further theoretical and experimental investigation in order to reveal the role of the 4f orbital to the (multi)band nature of the superconducting nickelates. Our results also emphasize the significant role of lattice correlation on the multiband structures of the infinite-layer nickelates.
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Submitted 24 February, 2022; v1 submitted 27 May, 2021;
originally announced May 2021.
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Contingent Penalty and Contingent Renewal Supply Contracts in High-Tech Industry
Authors:
Mirjam S Meijer,
Willem van Jaarsveld,
Ton de Kok,
Christopher S Tang
Abstract:
Unlike consumer goods industry, a high-tech manufacturer (OEM) often amortizes new product development costs over multiple generations, where demand for each generation is based on advance orders and additional uncertain demand. Also, due to economic reasons and regulations, high-tech OEMs usually source from a single supplier. Relative to the high retail price, the wholesale price for a supplier…
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Unlike consumer goods industry, a high-tech manufacturer (OEM) often amortizes new product development costs over multiple generations, where demand for each generation is based on advance orders and additional uncertain demand. Also, due to economic reasons and regulations, high-tech OEMs usually source from a single supplier. Relative to the high retail price, the wholesale price for a supplier to produce high-tech components is low. Consequently, incentives are misaligned: the OEM faces relatively high under-stock costs and the supplier faces high over-stock costs. In this paper, we examine supply contracts that are intended to align the incentives between a high-tech OEM and a supplier so that the supplier will invest adequate and yet non-verifiable capacity to meet the OEM's uncertain demand. When focusing on a single generation, the manufacturer can coordinate a decentralized supply chain and extract all surplus by augmenting a traditional wholesale price contract with a "contingent penalty" should the supplier fail to fulfill the OEM's demand. When the resulting penalty is too high to be enforceable, we consider a new class of "contingent renewal" wholesale price contracts with a stipulation: the OEM will renew the contract with the incumbent supplier for the next generation only when the supplier can fulfill the demand for the current generation. By using non-renewal as an implicit penalty, we show that the contingent renewal contract can coordinate the supply chain. While the OEM can capture the bulk of the supply chain profit, this innovative contract cannot enable the OEM to extract the entire surplus.
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Submitted 19 May, 2021;
originally announced May 2021.
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Observation of perfect diamagnetism and interfacial effect on the electronic structures in Nd0.8Sr0.2NiO2 superconducting infinite layers
Authors:
S. W. Zeng,
X. M. Yin,
C. J. Li,
L. E. Chow,
C. S. Tang,
K. Han,
Z. Huang,
Y. Cao,
D. Y. Wan,
Z. T. Zhang,
Z. S. Lim,
C. Z. Diao,
P. Yang,
A. T. S. Wee,
S. J. Pennycook,
A. Ariando
Abstract:
Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, materi…
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Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, material synthesis remains challenging, direct demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we show high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and demonstrate the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is achieved, confirming the occurrence of superconductivity in the films. Unlike the thick films in which the normal-state Hall-coefficient changes signs as the temperature decreases, the Hall-coefficient of films thinner than 5.5 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign-change of the Hall-coefficient.
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Submitted 13 February, 2022; v1 submitted 29 April, 2021;
originally announced April 2021.
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Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films
Authors:
Shengwei Zeng,
Chi Sin Tang,
Xinmao Yin,
Changjian Li,
Mengsha Li,
Zhen Huang,
Junxiong Hu,
Wei Liu,
Ganesh Ji Omar,
Hariom Jani,
Zhi Shiuh Lim,
Kun Han,
Dongyang Wan,
** Yang,
Stephen John Pennycook,
Andrew T. S. Wee,
Ariando Ariando
Abstract:
Infinite-layer Nd1-xSrxNiO2 thin films with Sr do** level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the n…
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Infinite-layer Nd1-xSrxNiO2 thin films with Sr do** level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome.
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Submitted 2 October, 2020; v1 submitted 23 April, 2020;
originally announced April 2020.
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Quantum dynamics in strongly driven random dipolar magnets
Authors:
M. Buchhold,
C. S. Tang,
D. M. Silevitch,
T. F. Rosenbaum,
G. Refael
Abstract:
The random dipolar magnet LiHo$_x$Y$_{1-x}$F$_4$ enters a strongly frustrated regime for small Ho$^{3+}$ concentrations with $x<0.05$. In this regime, the magnetic moments of the Ho$^{3+}$ ions experience small quantum corrections to the common Ising approximation of LiHo$_x$Y$_{1-x}$F$_4$, which lead to a $Z_2$-symmetry breaking and small, degeneracy breaking energy shifts between different eigen…
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The random dipolar magnet LiHo$_x$Y$_{1-x}$F$_4$ enters a strongly frustrated regime for small Ho$^{3+}$ concentrations with $x<0.05$. In this regime, the magnetic moments of the Ho$^{3+}$ ions experience small quantum corrections to the common Ising approximation of LiHo$_x$Y$_{1-x}$F$_4$, which lead to a $Z_2$-symmetry breaking and small, degeneracy breaking energy shifts between different eigenstates. Here we show that destructive interference between two almost degenerate excitation pathways burns spectral holes in the magnetic susceptibility of strongly driven magnetic moments in LiHo$_x$Y$_{1-x}$F$_4$. Such spectral holes in the susceptibility, microscopically described in terms of Fano resonances, can already occur in setups of only two or three frustrated moments, for which the driven level scheme has the paradigmatic $Λ$-shape. For larger clusters of magnetic moments, the corresponding level schemes separate into almost isolated many-body $Λ$-schemes, in the sense that either the transition matrix elements between them are negligibly small or the energy difference of the transitions is strongly off-resonant to the drive. This enables the observation of Fano resonances, caused by many-body quantum corrections to the common Ising approximation also in the thermodynamic limit. We discuss its dependence on the driving strength and frequency as well as the crucial role that is played by lattice dissipation.
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Submitted 18 February, 2020;
originally announced February 2020.
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The Emergence of Unconventional Plasmons Driven by Correlated Electron Interaction in B-site of 2D Hybrid Organic-Inorganic Perovskites
Authors:
Muhammad Avicenna Naradipa,
Aozhen Xie,
Arramel,
Xinmao Yin,
Chi Sin Tang,
Muhammad Fauzi Sahdan,
Teguh Citra Asmara,
Cuong Dang,
Muhammad Danang Birowosuto,
Andrew Thye Shen Wee,
Andrivo Rusydi
Abstract:
Hybrid organic-inorganic perovskites (HOIPs) have emerged to the forefront of optoelectronic materials advancement in the past few years. Due to the nature of organic compounds within the perovskite structure, its optoelectronic properties are affected by complex interaction and correlation effects between the organic and inorganic ions. Using spectroscopic ellipsometry, we observe two broad plasm…
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Hybrid organic-inorganic perovskites (HOIPs) have emerged to the forefront of optoelectronic materials advancement in the past few years. Due to the nature of organic compounds within the perovskite structure, its optoelectronic properties are affected by complex interaction and correlation effects between the organic and inorganic ions. Using spectroscopic ellipsometry, we observe two broad plasmonic excitation from the calculated loss function (LF) -Im[\varepislon^{-1} (ω)], peak A' and B' at 3.28 eV and 4.26 eV, respectively.The presence of these two asymmetric peaks in the spectroscopic ellipsometry (SE) spectra indicates the existence of unconventional plasmons at room temperature. This is inferred due to the absence of the zero-crossing in the real part of dielectric function \varepsilon_1 (ω). Through combined Near-Edge X-ray Absorption Fine Structure (NEXAFS) and Resonant Photoemission Spectroscopies (ResPES), we observe resonance enhancement peak close to 15 eV in the C K-edge region that unravels a charge transfer event due to the opening of an extra autoionization channel. Additionally, photoluminescence (PL) spectrum confirms the presence of broadband emission originating from the self-trapped emission excitons at 2.38 eV due to the soft 2D-HOIPs crystal structure. We believe that these phenomena directly impact the correlation strength in 2D-HOIPs. Our results have confirmed the existence of unconventional plasmons of 2D-HOIPs at room temperature. Such studies in the emission and plasmonic behavior of perovskites will pave the way for the efficient light emitting devices or lasers with minimal integrations of the materials.
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Submitted 5 March, 2020; v1 submitted 9 December, 2019;
originally announced December 2019.
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The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics
Authors:
Lingchao Zhang,
Shengwei Zeng,
Xinmao Yin,
Teguh Citra Asmara,
** Yang,
Kun Han,
Yu Cao,
Wenxiong Zhou,
Dongyang Wan,
Chi Sin Tang,
Andrivo Rusydi,
Ariando,
Thirumalai Venkatesan
Abstract:
Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controver…
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Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific.
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Submitted 4 October, 2017;
originally announced October 2017.
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Temperature-dependent terahertz conductivity of topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$
Authors:
Chi Sin Tang,
Bin Xia,
Xingquan Zhou,
Jian-Xin Zhu,
Lan Wang,
Elbert E. M. Chia
Abstract:
Using Terahertz Time-Domain Spectroscopy, we study the temperature-dependent complex optical conductivity of the topological insulator, Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ single-crystal from 5 K to 150 K in the terahertz regime (0.4 -- 3.0 THz). We analyze our experimental results using the Drude-Lorentz model, with the Drude component representing the metallic surface state and the Lorentz…
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Using Terahertz Time-Domain Spectroscopy, we study the temperature-dependent complex optical conductivity of the topological insulator, Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ single-crystal from 5 K to 150 K in the terahertz regime (0.4 -- 3.0 THz). We analyze our experimental results using the Drude-Lorentz model, with the Drude component representing the metallic surface state and the Lorentz term representing the bulk insulating state. We find the conductivity to be dominated by the Drude contribution, suggesting the presence of metallic surface states. The low-frequency real conductivity follows a thermally-activated behavior. Its origin is also discussed.
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Submitted 6 June, 2012;
originally announced June 2012.
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Singlet-triplet transitions in highly correlated nanowire quantum dots
Authors:
Y. T. Chen,
C. C. Chao,
S. Y. Huang,
C. S. Tang,
S. J. Cheng
Abstract:
We consider a quantum dot embedded in a three-dimensional nanowire with tunable aspect ratio a. A configuration interaction theory is developed to calculate the energy spectra of the finite 1D quantum dot systems charged with two electrons in the presence of magnetic fields B along the wire axis. Fruitful singlet-triplet transition behaviors are revealed and explained in terms of the competing e…
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We consider a quantum dot embedded in a three-dimensional nanowire with tunable aspect ratio a. A configuration interaction theory is developed to calculate the energy spectra of the finite 1D quantum dot systems charged with two electrons in the presence of magnetic fields B along the wire axis. Fruitful singlet-triplet transition behaviors are revealed and explained in terms of the competing exchange interaction, correlation interaction, and spin Zeeman energy. In the high aspect ratio regime, the singlet-triplet transitions are shown designable by tuning the parameters a and B. The transitions also manifest the highly correlated nature of long nanowire quantum dots.
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Submitted 9 December, 2009;
originally announced December 2009.
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Nonadiabatic quantum pum** in mesoscopic nanostructures
Authors:
C. S. Tang,
C. S. Chu
Abstract:
We consider a nonadiabatic quantum pum** phenomena in a ballistic narrow constriction. The pum** is induced by a potential that has both spatial and temporal periodicity characterized by $K$ and $Ω$. In the zero frequency ($Ω=0$) limit, the transmission through narrow constriction exhibits valley structures due to the opening up of energy gaps in the pum** region -- a consequence of the…
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We consider a nonadiabatic quantum pum** phenomena in a ballistic narrow constriction. The pum** is induced by a potential that has both spatial and temporal periodicity characterized by $K$ and $Ω$. In the zero frequency ($Ω=0$) limit, the transmission through narrow constriction exhibits valley structures due to the opening up of energy gaps in the pum** region -- a consequence of the $K$ periodicity. These valley structures remain robust in the regime of finite $Ω$, while their energies of occurrence are shifted by about $\hbarΩ/2$. The direction of these energy shifts depend on the directions of both the phase-velocity of the pum** potential and the transmitting electrons. This frequency dependent feature of the valley structures gives rise to both the asymmetry in the transmission coefficients and the pum** current. An experimental setup is suggested for a possible observation of our nonadiabatic quantum pum** findings.
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Submitted 21 March, 2006;
originally announced March 2006.
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Coherent quantum transport in the presence of a finite-range transversely polarized time-dependent field
Authors:
C. S. Tang,
C. S. Chu
Abstract:
This work investigates the quantum transport in a narrow constriction acted upon by a finite-range transversely polarized time-dependent electric field. A generalized scattering-matrix method is developed that has incorporated a time-dependent mode-matching scheme. The transverse field induces coherent inelastic scatterings that include both intersubband and intersideband transitions. These scat…
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This work investigates the quantum transport in a narrow constriction acted upon by a finite-range transversely polarized time-dependent electric field. A generalized scattering-matrix method is developed that has incorporated a time-dependent mode-matching scheme. The transverse field induces coherent inelastic scatterings that include both intersubband and intersideband transitions. These scatterings give rise to the dc conductance $G$ a general suppressed feature that escalates with the chemical potential. In addition, particular suppressed features -- the dip structures -- are found in $G$. These features are recognized as the quasi-bound-state (QBS) features that arise from electrons making intersubband transitions to the vicinity of a subband bottom. For the case of larger field intensities, the QBS features that involve more photons are more evident. These QBS features are closely associated with the singular density of states at the subband bottoms. An experimental setup is proposed for the observation of these features.
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Submitted 21 March, 2006;
originally announced March 2006.
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Differential conductance of a saddle-point constriction with a time-modulated gate-voltage
Authors:
C. S. Tang,
C. S. Chu
Abstract:
The effect of a time-modulated gate-voltage on the differential conductance $G$ of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form $V_{0} θ(a/2-|x-x_{c}|) \cos (ωt)$. For $\hbarω$ less than half of the transverse subband energy level spacing, gate-voltage-assist…
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The effect of a time-modulated gate-voltage on the differential conductance $G$ of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form $V_{0} θ(a/2-|x-x_{c}|) \cos (ωt)$. For $\hbarω$ less than half of the transverse subband energy level spacing, gate-voltage-assisted (suppressed) feature occurs when the chemical potential $μ$ is less (greater) than but close to the threshold energy of a subband. As $μ$ increases, $G$ is found to exhibit, alternatively, the assisted and the suppressed feature. For larger $\hbarω$, these two features may overlap with one another. Dip structures are found in the suppressed regime. Mini-steps are found in the assisted regime only when the gate-voltage covers region far enough away from the center of the constriction.
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Submitted 21 March, 2006;
originally announced March 2006.
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Effects of a transversely polarized electric field on the quantum transport in narrow channels
Authors:
C. S. Chu,
C. S. Tang
Abstract:
The quantum transport in a narrow channel (NC) is studied in the presence of a time-dependent delta-profile electric field.
The electric field is taken to be transversely polarized, with frequency $ω$, causing inter-subband and inter-sideband transitions. Suppression in the dc conductance $G$ is found, which escalates with the chemical potential. There are structures in $G$ which are related to…
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The quantum transport in a narrow channel (NC) is studied in the presence of a time-dependent delta-profile electric field.
The electric field is taken to be transversely polarized, with frequency $ω$, causing inter-subband and inter-sideband transitions. Suppression in the dc conductance $G$ is found, which escalates with the chemical potential. There are structures in $G$ which are related to the quasi-bound states (QBS) features. Major dip, and dip-and-peak, structures occur when an incident electron makes transition to a subband edge by absorbing or emitting one, and two, $\hbarω$, respectively. Structures associated with three $\hbarω$ processes are recognized. The QBS are closely associated with the singular density of states (DOS) at subband bottoms. Our results indicate that, due to this singular features of the DOS, the interaction of the electron with the electric field has to be treated beyond finite order perturbation.
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Submitted 18 March, 2006;
originally announced March 2006.
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Coherent quantum transport in narrow constrictions in the presence of a finite-range longitudinally polarized time-dependent field
Authors:
C. S. Tang,
C. S. Chu
Abstract:
We have studied the quantum transport in a narrow constriction acted upon by a finite-range longitudinally polarized time-dependent electric field. The electric field induces coherent inelastic scatterings which involve both intra-subband and inter-sideband transitions. Subsequently, the dc conductance G is found to exhibit suppressed features. These features are recognized as the quasi-bound-st…
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We have studied the quantum transport in a narrow constriction acted upon by a finite-range longitudinally polarized time-dependent electric field. The electric field induces coherent inelastic scatterings which involve both intra-subband and inter-sideband transitions. Subsequently, the dc conductance G is found to exhibit suppressed features. These features are recognized as the quasi-bound-state (QBS) features which are associated with electrons making transitions to the vicinity of a subband bottom, of which the density of states is singular. Having valley-like instead of dip-like structures, these QBS features are different from the G characteristics for constrictions acted upon by a finite-range time-modulated potential. In addition, the subband bottoms in the time-dependent electric field region are shifted upward by an energy proportional to the square of the electric field and inversely proportional to the square of the frequency. This effective potential barrier is originated from the square of the vector potential and it leads to the interesting field-sensitive QBS features. An experimental set-up is proposed for the observation of these features.
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Submitted 18 March, 2006;
originally announced March 2006.
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Quantum transport in the presence of a finite-range time-modulated potential
Authors:
C. S. Tang,
C. S. Chu
Abstract:
Quantum transport in a narrow constriction, and in the presence of a finite-range time-modulated potential, is studied. The potential is taken the form $V(x,t) = V_{0} θ(x)θ(a-x)\cos(ωt)$, with $a$ the range of the potential and $x$ the transmission direction. As the chemical potential $μ$ is increasing, the dc conductance $G$ is found to exhibit dip, or peak, structures when $μ$ is at…
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Quantum transport in a narrow constriction, and in the presence of a finite-range time-modulated potential, is studied. The potential is taken the form $V(x,t) = V_{0} θ(x)θ(a-x)\cos(ωt)$, with $a$ the range of the potential and $x$ the transmission direction. As the chemical potential $μ$ is increasing, the dc conductance $G$ is found to exhibit dip, or peak, structures when $μ$ is at $n\hbarω$ above the threshold energy of a subband. These structures in $G$ are found in both the small $a$ ($a \ll λ_{F}$) and the large $a$ ($a \gg λ_{F}$) regime. The dips, which are associated with the formation of quasi-bound states, are narrower for smaller $a$, and for smaller $V_{0}$. The locations of these dips are essentially fixed, with small shifts only in the case of large $V_{0}$. Our results can be reduced to the limiting case of a delta-profile oscillating potential when both $a$ and $V_{0}a$ are small. The assumed form of the time-modulated potential is expected to be realized in a gate-induced potential configuration.
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Submitted 27 December, 2005;
originally announced December 2005.
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Strain-Induced Coupling of Spin Current to Nanomechanical Oscillations
Authors:
A. G. Mal'shukov,
C. S. Tang,
C. S. Chu,
K. A. Chao
Abstract:
We propose a setup which allows to couple the electron spin degree of freedom to the mechanical motions of a nanomechanical system not involving any of the ferromagnetic components. The proposed method employs the strain induced spin-orbit interaction of electrons in narrow gap semiconductors. We have shown how this method can be used for detection and manipulation of the spin flow through a sus…
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We propose a setup which allows to couple the electron spin degree of freedom to the mechanical motions of a nanomechanical system not involving any of the ferromagnetic components. The proposed method employs the strain induced spin-orbit interaction of electrons in narrow gap semiconductors. We have shown how this method can be used for detection and manipulation of the spin flow through a suspended rod in a nanomechanical device.
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Submitted 8 September, 2005; v1 submitted 29 April, 2005;
originally announced April 2005.
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Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems
Authors:
C. S. Tang,
A. G. Mal'shukov,
K. A. Chao
Abstract:
Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under effect of the time dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time dependent Rashba interaction is provided by time dependent electric gates of appropriate shapes. Several examples of sp…
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Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under effect of the time dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time dependent Rashba interaction is provided by time dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified DC spin current are studied.
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Submitted 22 March, 2005; v1 submitted 8 December, 2004;
originally announced December 2004.
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DC Spin Current Generation in a Rashba-type Quantum Channel
Authors:
L. Y. Wang,
C. S. Tang,
C. S. Chu
Abstract:
We propose and demonstrate theoretically that resonant inelastic scattering (RIS) can play an important role in dc spin current generation. The RIS makes it possible to generate dc spin current via a simple gate configuration: a single finger-gate that locates atop and orients transversely to a quantum channel in the presence of Rashba spin-orbit interaction. The ac biased finger-gate gives rise…
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We propose and demonstrate theoretically that resonant inelastic scattering (RIS) can play an important role in dc spin current generation. The RIS makes it possible to generate dc spin current via a simple gate configuration: a single finger-gate that locates atop and orients transversely to a quantum channel in the presence of Rashba spin-orbit interaction. The ac biased finger-gate gives rise to a time-variation in the Rashba coupling parameter, which causes spin-resolved RIS, and subsequently contributes to the dc spin current. The spin current depends on both the static and the dynamic parts in the Rashba coupling parameter, $α_0$ and $α_1$, respectively, and is proportional to $α_0 α_1^2$. The proposed gate configuration has the added advantage that no dc charge current is generated. Our study also shows that the spin current generation can be enhanced significantly in a double finger-gate configuration.
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Submitted 23 September, 2004; v1 submitted 12 September, 2004;
originally announced September 2004.
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Energy levels of a parabolically confined quantum dot in the presence of spin-orbit interaction
Authors:
W. H. Kuan,
C. S. Tang,
W. Xu
Abstract:
We present a theoretical study of the energy levels in a parabolically confined quantum dot in the presence of the Rashba spin-orbit interaction (SOI). The features of some low-lying states in various strengths of the SOI are examined at finite magnetic fields. The presence of a magnetic field enhances the possibility of the spin polarization and the SOI leads to different energy dependence on m…
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We present a theoretical study of the energy levels in a parabolically confined quantum dot in the presence of the Rashba spin-orbit interaction (SOI). The features of some low-lying states in various strengths of the SOI are examined at finite magnetic fields. The presence of a magnetic field enhances the possibility of the spin polarization and the SOI leads to different energy dependence on magnetic fields applied. Furthermore, in high magnetic fields, the spectra of low-lying states show basic features of Fock-Darwin levels as well as Landau levels.
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Submitted 12 March, 2004; v1 submitted 3 March, 2004;
originally announced March 2004.
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Non-adiabatic Current Excitation in Quantum Rings
Authors:
S. S. Gylfadottir,
V. Gudmundsson,
C. S. Tang,
A. Manolescu
Abstract:
We investigate the difference in the response of a one-dimensional semiconductor quantum ring and a finite-width ring to a strong and short-lived time-dependent perturbation in the THz regime. In both cases the persistent current is modified through a nonadiabatic change of the many-electron states of the system, but by different mechanisms in each case.
We investigate the difference in the response of a one-dimensional semiconductor quantum ring and a finite-width ring to a strong and short-lived time-dependent perturbation in the THz regime. In both cases the persistent current is modified through a nonadiabatic change of the many-electron states of the system, but by different mechanisms in each case.
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Submitted 29 September, 2003;
originally announced September 2003.
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Finger-gate array quantum pumps:pum** characteristics and mechanisms
Authors:
S. W. Chung,
C. S. Tang,
C. S. Chu,
C. Y. Chang
Abstract:
We study the pum** effects, in both the adiabatic and nonadiabatic regimes, of a pair of \QTR{it}{finite} finger-gate array (FGA) on a narrow channel. Connection between the pum** characteristics and associated mechanisms is established. The pum** potential is generated by ac biasing the FGA pair. For a single pair (N=1) of finger gates (FG's), the pum** mechanism is due to the coherent…
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We study the pum** effects, in both the adiabatic and nonadiabatic regimes, of a pair of \QTR{it}{finite} finger-gate array (FGA) on a narrow channel. Connection between the pum** characteristics and associated mechanisms is established. The pum** potential is generated by ac biasing the FGA pair. For a single pair (N=1) of finger gates (FG's), the pum** mechanism is due to the coherent inelastic scattering of the traversing electron to its subband threshold. For a pair of FGA with pair number $N>2$, the dominant pum** mechanism becomes that of the time-dependent Bragg reflection. The contribution of the time-dependent Bragg reflection to the pum** is enabled by breaking the symmetry in the electron transmission when the pum** potential is of a predominant propagating type. This propagating wave condition can be achieved both by an appropriate choice of the FGA pair configuration and by the monitoring of a phase difference $φ$ between the ac biases in the FGA pair. The robustness of such a pum** mechanism is demonstrated by considering a FGA pair with only pair number N=4.
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Submitted 28 June, 2004; v1 submitted 7 June, 2003;
originally announced June 2003.
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Spin Current Generation and Detection in the Presence of AC Gate
Authors:
A. G. Mal'shukov,
C. S. Tang,
C. S. Chu,
K. A. Chao
Abstract:
We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC current are discussed. An all-electric method of spin current detection is suggested, which measures the voltage on the gate in the vicinity of a 2D electron gas…
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We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC current are discussed. An all-electric method of spin current detection is suggested, which measures the voltage on the gate in the vicinity of a 2D electron gas carrying a time dependent spin current. Both the generation and detection do not involve any optical or magnetic mediators.
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Submitted 6 November, 2003; v1 submitted 25 November, 2002;
originally announced November 2002.
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Transport spectroscopy in a time-modulated open quantum dot
Authors:
C. S. Tang,
Y. H. Tan,
C. S. Chu
Abstract:
We have investigated the time-modulated coherent quantum transport phenomena in a ballistic open quantum dot. The conductance $G$ and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under high-frequency modulation, the traversing electrons are found to exhibit three types of resonant scatterings. They are intersideband scatterings: into quasibound sta…
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We have investigated the time-modulated coherent quantum transport phenomena in a ballistic open quantum dot. The conductance $G$ and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under high-frequency modulation, the traversing electrons are found to exhibit three types of resonant scatterings. They are intersideband scatterings: into quasibound states in the dots, into true bound states in the dots, and into quasibound states just beneath the subband threshold in the leads. Dip structures or fano structures in $G$ are their signatures. Our results show structures due to 2$\hbarω$ intersideband processes. At the above scattering resonances, we have estimated, according to our dwell time calculation, the number of round-trip scatterings that the traversing electrons undertake between the two dot openings.
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Submitted 27 July, 2005; v1 submitted 1 October, 2002;
originally announced October 2002.