Showing 1–50 of 60 results for author: Tan, S G

Spin Orbit Torque on a Curved Surface

Authors: Seng Ghee Tan, Che Chun Huang, Mansoor B. A. Jalil, Zhuobin Siu

Abstract: We provide a general formulation of the spin-orbit coupling on a 2D curved surface. Considering the wide applicability of spin-orbit effect in spinor-based condensed matter physics, a general spin-orbit formulation could aid the study of spintronics, Dirac graphene, topological systems, and quantum information on curved surfaces. Particular attention is then devoted to the development of an import… ▽ More We provide a general formulation of the spin-orbit coupling on a 2D curved surface. Considering the wide applicability of spin-orbit effect in spinor-based condensed matter physics, a general spin-orbit formulation could aid the study of spintronics, Dirac graphene, topological systems, and quantum information on curved surfaces. Particular attention is then devoted to the development of an important spin-orbit quantity known as the spin-orbit torque. As devices trend smaller in dimension, the physics of local geometries on spin-orbit torque, hence spin and magnetic dynamics shall not be neglected. We derived the general expression of a spin-orbit anisotropy field for the curved surfaces and provided explicit solutions in the special contexts of the spherical, cylindrical and flat coordinates. Our expressions allow spin-orbit anisotropy fields and hence spin-orbit torque to be computed over the entire surfaces of devices of any geometry. △ Less

Submitted 16 January, 2024; originally announced January 2024.

Comments: 14 pages, 5 figures

The Aharonov Casher phase of a bipartite entanglement pair traversing a quantum square ring

Authors: Che-Chun Huang, Seng Ghee Tan, Ching-Ray Chang

Abstract: We propose in this article a quantum square ring that conveniently generates, annihilates and distills the Aharonov Casher phase with the aid of entanglement. The non-Abelian phase is carried by a pair of spin-entangled particles traversing the square ring. At maximal entanglement, dynamic phases are eliminated from the ring and geometric phases are generated in discrete values. By contrast, at pa… ▽ More We propose in this article a quantum square ring that conveniently generates, annihilates and distills the Aharonov Casher phase with the aid of entanglement. The non-Abelian phase is carried by a pair of spin-entangled particles traversing the square ring. At maximal entanglement, dynamic phases are eliminated from the ring and geometric phases are generated in discrete values. By contrast, at partial to no entanglement, both geometric and dynamic phases take on discrete or locally continuous values depending only on the wavelength and the ring size. We have shown that entanglement in a non-Abelian system could greatly simplify future experimental efforts revolving around the studies of geometric phases. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: 7 pages, 5 figures, 1 table

Higher Chern Number States in Curved Periodic Nanowires

Authors: Zhuo Bin Siu, Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: The coupling between the spin and momentum degrees of freedom due to spin-orbit interactions (SOI) suggests that the strength of the latter can be modified by controlling the motion of the charge carriers. In this paper, we investigate how the effective SOI can be modulated by constraining the motion of charge carriers to curved waveguides thereby introducing real-space geometric curvature in thei… ▽ More The coupling between the spin and momentum degrees of freedom due to spin-orbit interactions (SOI) suggests that the strength of the latter can be modified by controlling the motion of the charge carriers. In this paper, we investigate how the effective SOI can be modulated by constraining the motion of charge carriers to curved waveguides thereby introducing real-space geometric curvature in their motion. The change in the SOI can in turn induce topological phase transitions in the system. Specifically, we study how the introduction of periodic sinusoidal curvature in nanowires with intrinsic SOC can induce the onset of mid-gap topologically protected edge states, which can be characterized by a topological invariant or Chern number. The Chern number corresponds to the number of discrete charges that would be pumped across the length of the nanowire when the phase of a sliding gate potential relative to that of the sinusoidal curvature is varied adiabatically over a complete period. In addition, coupling to an external magnetization can be utilized as an experimental knob to modify the Chern number by changing the ordering of the nanowire energy bands. The magnetization can be tuned to achieve large discrete jumps in the number of pump charges per phase period. △ Less

Submitted 31 August, 2021; v1 submitted 20 July, 2021; originally announced July 2021.

Phase Analysis on the Error Scaling of Entangled Qubits in a 53-Qubit System

Authors: Wei-Jia Huang, Wei-Chen Chien, Chien-Hung Cho, Che-Chun Huang, Tsung-Wei Huang, Seng Ghee Tan, Chenfeng Cao, Bei Zeng, Ching-Ray Chang

Abstract: We have studied carefully the behaviors of entangled qubits on the IBM Rochester with various connectivities and under a "noisy" environment. A phase trajectory analysis based on our measurements of the GHZ-like states is performed. Our results point to an important fact that entangled qubits are "protected" against environmental noise by a scaling property that impacts only the weighting of their… ▽ More We have studied carefully the behaviors of entangled qubits on the IBM Rochester with various connectivities and under a "noisy" environment. A phase trajectory analysis based on our measurements of the GHZ-like states is performed. Our results point to an important fact that entangled qubits are "protected" against environmental noise by a scaling property that impacts only the weighting of their amplitudes. The reproducibility of most measurements has been confirmed within a reasonably short gate operation time. But there still are a few combinations of qubits that show significant entanglement evolution in the form of transitions between quantum states. The phase trajectory of an entangled evolution, and the impact of the sudden death of GHZ-like states and the revival of newly excited states are analyzed in details. All observed trajectories of entangled qubits arise under the influences of the newly excited states in a "noisy" intermediate-scale quantum (NISQ) computer. △ Less

Submitted 21 October, 2020; v1 submitted 13 October, 2020; originally announced October 2020.

Sustainable spin current in the time-dependent Rashba system

Authors: Cong Son Ho, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The generation of spin current and spin polarization in 2DEG Rashba system is considered, in which the spin-orbital coupling (SOC) is modulated by an ac gate voltage. By using non-Abelian gauge field method, we show the presence of an additional electric field. This field induces a spin current generated even in the presence of impurity scattering and is related to the time-modulation of the Rashb… ▽ More The generation of spin current and spin polarization in 2DEG Rashba system is considered, in which the spin-orbital coupling (SOC) is modulated by an ac gate voltage. By using non-Abelian gauge field method, we show the presence of an additional electric field. This field induces a spin current generated even in the presence of impurity scattering and is related to the time-modulation of the Rashba SOC strength. In addition, the spin precession can be controlled by modulating the modulation frequency of the Rashba SOC strength. It is shown that at high modulation frequency, the precessional motion is suppressed so that the electron spin polarization can be sustained in the 2DEG △ Less

Submitted 17 June, 2020; originally announced June 2020.

Report number: J. Appl. Phys. vol. 111, 07C327 (2012)

Journal ref: J. Appl. Phys. vol. 111, 07C327 (2012)

Zitterbewegung-mediated RKKY coupling in topological insulator thin films

Authors: Cong Son Ho, Zhuo Bin Siu, Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can b… ▽ More The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can be controlled by tuning the film thickness and/or applying an in-plane magnetic field. Moreover, persistent electron wavepacket oscillation can be achieved in the TI thin film system at the phase transition point, which may assist in the experimental detection of the jitter motion (Zitterbewegung). The implications of the microscopic picture of electron motion in explaining other transport-related effects, e.g., electron-mediated RKKY coupling in the TI thin film system, are also discussed. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Journal ref: New Journal of Physics (2020)

Resilience of the Spin-Orbit Torque against Geometrical Backscattering

Authors: Seng Ghee Tan, Che-Chun Huang, Mansoor B. A. Jalil, Ching-Ray Chang, Szu-Cheng Cheng

Abstract: We show in this paper that the technologically relevant field-like spin-orbit torque shows resilience against the geometrical effect of electron backscattering. As device grows smaller in sizes, the effect of geometry on physical properties like spin torque, and hence switching current could place a physical limit on the continued shrinkage of such device -- a necessary trend of all memory devices… ▽ More We show in this paper that the technologically relevant field-like spin-orbit torque shows resilience against the geometrical effect of electron backscattering. As device grows smaller in sizes, the effect of geometry on physical properties like spin torque, and hence switching current could place a physical limit on the continued shrinkage of such device -- a necessary trend of all memory devices (MRAM). The geometrical effect of curves has been shown to impact quantum transport and topological transition of Dirac and topological systems. In our work, we have ruled out the potential threat of line-curves degrading the effectiveness of spin-orbit torque switching. In other words, spin-orbit torque switching will be resilient against the influence of curves that line the circumferences of defects in the events of electron backscattering, which commonly happen in the channel of modern electronic devices. △ Less

Submitted 28 August, 2019; originally announced August 2019.

Comments: 13 pages, 2 figures, 1 table

Effect of cap** layer on spin-orbit torques

Authors: Chi Sun, Zhuo Bin Siu, Seng Ghee Tan, Hyunsoo Yang, Mansoor B. A. Jalil

Abstract: In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM) and cap** layers. Here we present a theoretical model based on the spin-drift-diffusion (SDD) formalism to investigate the effect of the cap** layer properties… ▽ More In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM) and cap** layers. Here we present a theoretical model based on the spin-drift-diffusion (SDD) formalism to investigate the effect of the cap** layer properties such as its thickness on the SOT observed in experiments. It is found that the spin Hall-induced SOT can be significantly enhanced by incorporating a cap** layer with opposite spin Hall angle to that of the HM layer. The spin Hall torque can be maximized by tuning the cap** layer thickness. However, in the absence of the spin Hall effect (SHE) in the cap** layer, the torque decreases monotonically with cap** layer thickness. Conversely, the spin Hall torque is found to decrease monotonically with the FM layer thickness, irrespective of the presence or absence of SHE in the cap** layer. All these trends are in correspondence with experimental observations. Finally, our model suggests that cap** layers with long spin diffusion length and high resistivity would also enhance the spin Hall torque. △ Less

Submitted 19 April, 2018; originally announced April 2018.

Newton's second law in spin-orbit torque

Authors: Cong Son Ho, Seng Ghee Tan, Shun-Qing Shen, Mansoor B. A. Jalil

Abstract: Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force. In Rashba spin-orbit coupling system, the dam**-like SOT can be expressed as ${\mathbf T}^\mathrm{so}={\mathbf R}_c\times {\mathbf F}^{\mathrm {so}}$, in anal… ▽ More Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force. In Rashba spin-orbit coupling system, the dam**-like SOT can be expressed as ${\mathbf T}^\mathrm{so}={\mathbf R}_c\times {\mathbf F}^{\mathrm {so}}$, in analogy to the classical torque-force relation, where $R_c$ is the effective radius characterizing the Rashba splitting in the momentum space. As a consequence, the magnetic energy is transferred to the conduction electrons, which dissipates through Joule heating at a rate of $({\mathbf j}_e\cdot {\mathbf F}^{\mathrm {so}})$, with $j_e$ being the applied current. Finally, we propose an experimental verification of our findings via measurement of the anisotropic magnetoresistance effect. △ Less

Submitted 29 August, 2018; v1 submitted 5 September, 2017; originally announced September 2017.

Journal ref: Journal of Physics: Condensed Matter (2018)

Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion

Authors: Can Yesilyurt, Zhuo Bin Siu, Seng Ghee Tan, Gengchiau Liang, Shengyuan A. Yang, Mansoor B. A. Jalil

Abstract: Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angl… ▽ More Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angle-space according to their valley index. A real magnetic barrier configuration is used to select allowed transmission angles, which results in electrically controllable and switchable valley polarization. Our findings may pave the way for experimental investigation of valley polarization, as well as valleytronic and electron optic applications in Weyl semimetals. △ Less

Submitted 9 February, 2018; v1 submitted 19 May, 2017; originally announced May 2017.

Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap

Authors: Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang, Mansoor B. A. Jalil

Abstract: We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced by the aid of tilted energy dispersion without a band gap. The origin of this effect is… ▽ More We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced by the aid of tilted energy dispersion without a band gap. The origin of this effect is the shift of the electrons wave-vector at barrier boundaries caused by i) the pseudo-magnetic field induced by electrical potential, i.e., a newly discovered feature that is only possible in the materials possessing tilted energy dispersion, ii) the real magnetic field induced by ferromagnetic layer deposited on the top of the system. We use realistic barrier structure applicable in current nanotechnology and analyze the temperature dependence of the tunneling conductance. The new approach presented here may resolve a major problem of possible transistor applications in topological semimetals, i.e., the absence of normal backscattering and gapless band structure. △ Less

Submitted 5 January, 2017; originally announced January 2017.

Journal ref: Journal of Applied Physics 121, 244303 (2017)

Adiabatic approximation for a uniform DC electric field

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work, we show that the disorder-free Kubo formula for the non-equilibrium value of an observable due to a DC electric field, represented by $E_x\hat{x}$ in the Hamiltonian, can be interpreted as the standard time-independent theory response of the observable due to a time- and position-\textit{independent} perturbation $H_{MF}$. We derive the explicit expression for $H_{MF}$ and show that… ▽ More In this work, we show that the disorder-free Kubo formula for the non-equilibrium value of an observable due to a DC electric field, represented by $E_x\hat{x}$ in the Hamiltonian, can be interpreted as the standard time-independent theory response of the observable due to a time- and position-\textit{independent} perturbation $H_{MF}$. We derive the explicit expression for $H_{MF}$ and show that it originates from the adiabatic approximation to $\langle k|E_x\hat{x}$ in which transitions between the different eigenspinor states of a system are forbidden. The expression for $H_{MF}$ is generalized beyond the real spin degree of freedom to include other spin-like discrete degrees of freedom (e.g. valley and pseudospin). By direct comparison between Kubo formula and the time-independent perturbation theory, as well as the Sundaram-Niu wavepacket formalism, we show that $H_{MF}$ reproduces the effect of the E-field, i.e. $E_x\hat{x}$, up to the first order. This replacement suggests the emergence of a new spin current term that is not captured by the standard Kubo formula spin current calculation. We illustrate this via the exemplary spin current for the heavy hole spin 3/2 Luttinger system. Finally, we apply the formalism and derive an analogous $H_{MF}$ for the effects of a weakly position-dependent coupling to the spin-like internal degrees of freedom. This gives rise to an anomalous velocity as well as spin accumulation terms in spin$\otimes$pseudospin space in addition to those contained explicitly in the unperturbed Hamiltonian. △ Less

Submitted 29 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. A 97, 022101 (2018)

Effect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films

Authors: Cong Son Ho, Yi Wang, Zhuo Bin Siu, Hyunsoo Yang, Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $\mathrm{Bi_2Se_3}$, the op… ▽ More We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $\mathrm{Bi_2Se_3}$, the optimal thickness is about 3-5 nm. △ Less

Submitted 5 December, 2016; v1 submitted 24 November, 2016; originally announced November 2016.

Comments: 5 pages, 2 figures

Journal ref: Scientific Reports 7, 792 (2017)

Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion

Authors: Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang, Shengyuan A. Yang, Mansoor B. A. Jalil

Abstract: Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semimetal p-n-p junction. The angular dependence of electron tunneling exhibits an anomalous profile such that perfect transmission angles are shifted along the direction of the tilt. Coupling of the tilted dispersion and el… ▽ More Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semimetal p-n-p junction. The angular dependence of electron tunneling exhibits an anomalous profile such that perfect transmission angles are shifted along the direction of the tilt. Coupling of the tilted dispersion and electrical potential within the barrier region gives rise to a transverse momentum shift, which is analogous to the transverse Lorentz displacement induced by magnetic barriers. △ Less

Submitted 22 August, 2017; v1 submitted 20 October, 2016; originally announced October 2016.

Journal ref: Applied Physics Letters, 111, 063101 (2017)

Spin accumulation in disordered topological insulator thin films

Authors: Zhuo Bin Siu, Ho Cong Son, Mansoor bin Abdul Jalil, Seng Ghee Tan

Abstract: Topological insulator (TI) thin films differ from the more commonly studied semi-infinite bulk TIs in that the former possesses both top and bottom surfaces where the surface states localized at different surfaces can couple to one another due to the finite thickness of the film. In the presence of an in-plane mangnetization TI thin films display two distinct phases depending on which of the inter… ▽ More Topological insulator (TI) thin films differ from the more commonly studied semi-infinite bulk TIs in that the former possesses both top and bottom surfaces where the surface states localized at different surfaces can couple to one another due to the finite thickness of the film. In the presence of an in-plane mangnetization TI thin films display two distinct phases depending on which of the inter-surface coupling or the magnetization is stronger. In this work, we consider a TI thin film system with an in-plane magnetization and calculate numerically the resulting spin accumulation on both surfaces of the film due to an in-plane electric field to linear order. We describe a numerical scheme for performing the Kubo calculation calculation in which we include impurity scattering and vertex corrections. We find that the sums of the spin accumulation over the two surfaces in the in-plane direction perpendicular to the magnetization, and in the out of plane direction, are antisymmetric in Fermi energy about the charge neutrality point and are non-vanishing only when the symmetry between the top and bottom TI surfaces is broken. The impurity scattering, in general, diminishes the magnitude of the spin accumulation and can also change the sign of the spin accumulation at some Fermi energies where the accumulation is small. △ Less

Submitted 9 September, 2016; v1 submitted 7 September, 2016; originally announced September 2016.

The role of exchange interaction in nitrogen vacancy centre-based magnetometry

Authors: Cong Son Ho, Seng Ghee Tan, Mansoor B. A. Jalil, Zilong Chen, Leonid A. Krivitsky

Abstract: We propose a multilayer device comprising of a thin-film-based ferromagnetic hetero-structure (FMH) deposited on a diamond layer doped with nitrogen vacancy centers (NVC's). We find that when the NVC's are in close proximity (1-2 nm) with the FMH, the exchange energy is comparable to, and may even surpass the magnetostatic interaction energy. This calls for the need to consider and utilize both ef… ▽ More We propose a multilayer device comprising of a thin-film-based ferromagnetic hetero-structure (FMH) deposited on a diamond layer doped with nitrogen vacancy centers (NVC's). We find that when the NVC's are in close proximity (1-2 nm) with the FMH, the exchange energy is comparable to, and may even surpass the magnetostatic interaction energy. This calls for the need to consider and utilize both effects in magnetometry based on NVC's in diamond. As the distance between the FMH and NVC is decreased to the sub-nanometer scale, the exponential increase in the exchange energy suggests spintronic applications of NVC beyond magnetometry, such as detection of spin-Hall effect or spin currents. △ Less

Submitted 26 October, 2016; v1 submitted 26 July, 2016; originally announced July 2016.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 94, 245424 (2016)

Effective Hamiltonian for surface states of topological insulator nanotubes

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work we derive an effective Hamiltonian for the surface states of a hollow topological insulator (TI) nanotube with finite width walls. Unlike a solid TI cylinder, a TI nanotube possesses both an inner as well as outer surface on which the states localized at each surface are coupled together. The curvature along the circumference of the nanotube leads to a spatial variation of the spin or… ▽ More In this work we derive an effective Hamiltonian for the surface states of a hollow topological insulator (TI) nanotube with finite width walls. Unlike a solid TI cylinder, a TI nanotube possesses both an inner as well as outer surface on which the states localized at each surface are coupled together. The curvature along the circumference of the nanotube leads to a spatial variation of the spin orbit interaction field experienced by the charge carriers as well as an asymmetry between the inner and outer surfaces of the nanotube. Both of these features result in terms in the effective Hamiltonian for a TI nanotube absent in that of a flat TI thin film of the same thickness. We calculate the numerical values of the parameters for a \ce{Bi2Se3} nanotube as a function of the inner and outer radius, and show that the differing relative magnitudes between the parameters result in qualitatively differing behaviour for the eigenstates of tubes of different dimensions. △ Less

Submitted 26 July, 2016; originally announced July 2016.

Influence of Fermi arc states and double Weyl node on tunneling in a Dirac semimetal

Authors: Zhuo Bin Siu, Can Yesilyurt, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these stud… ▽ More Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these studies. In this work we study the tunneling in a thin film system of the Dirac semimetal $\text{Na}_3\text{Bi}$ consisting of a central segment with a gate potential, sandwiched between identical semi-infinite source and drain segments. The model Hamiltonian we use for $\text{Na}_3\text{Bi}$ gives, for each spin, two Weyl nodes separated in $k$-space symmetrically about $k_z=0$. The presence of a top and bottom surface in the thin film geometry results in the appearance of Fermi arc states and energy subbands. We show that (for each spin) the presence of two Weyl nodes and the Fermi arc states result in enhanced transmission oscillations, and finite transmission even when the energy falls within the \textit{bulk} band gap in the central segment respectively. These features are not evident in single Weyl node models. △ Less

Submitted 28 June, 2016; originally announced June 2016.

Gauge field in systems with spin orbit interactions and additional discrete degrees of freedom to real spin

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The spin gauge field formalism has been used to explain the emergence of out of plane spin accumulation in two-dimensional spin orbit interaction (SOI) systems in the presence of an in-plane electric field. The adiabatic alignment of the charge carrier spins to the momentum dependent SOI field, which changes in time due to the electric field, can be mathematically captured by the addition of a gau… ▽ More The spin gauge field formalism has been used to explain the emergence of out of plane spin accumulation in two-dimensional spin orbit interaction (SOI) systems in the presence of an in-plane electric field. The adiabatic alignment of the charge carrier spins to the momentum dependent SOI field, which changes in time due to the electric field, can be mathematically captured by the addition of a gauge term in the Hamiltonian. This gauge term acts like an effective, electric field dependent magnetization. In this work we show that this effective magnetization can be generalized to systems which include additional discrete degrees of freedom to real spin, such as the pseudospin and/or valley degrees of freedom in emerging materials like molybdenum sulphide and silicene. We show that the generalized magnetization recovers key results from the Sundaram-Niu formalism as well as from the Kubo formula. We then use the generalized magnetization to study the exemplary system of a topological insulator thin film system where the presence of both a top as well as a bottom surface provides an additional discrete degree of freedom in addition to the real spin. △ Less

Submitted 29 December, 2016; v1 submitted 13 June, 2016; originally announced June 2016.

Comments: The first half of this article dealing with the derivation of the effective magnetization has been superseded by arXiv:1612.09102

Klein tunneling in Weyl semimetals under the influence of magnetic field

Authors: Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang, Mansoor B. A. Jalil

Abstract: Klein tunneling refers to the absence of normal backscattering of electrons even under the case of high potential barriers. At the barrier interface, the perfect matching of electron and hole wavefunctions enables a unit transmission probability for normally incident electrons. It is theoretically and experimentally well understood in two-dimensional relativistic materials such as graphene. Here w… ▽ More Klein tunneling refers to the absence of normal backscattering of electrons even under the case of high potential barriers. At the barrier interface, the perfect matching of electron and hole wavefunctions enables a unit transmission probability for normally incident electrons. It is theoretically and experimentally well understood in two-dimensional relativistic materials such as graphene. Here we investigate the Klein tunneling effect in Weyl semimetals under the influence of magnetic field induced by anti-symmetric ferromagnetic stripes placed at barrier boundaries. Our results show that the resonance of Fermi wave vector at specific barrier lengths gives rise to perfect transmission rings, i.e., three-dimensional analogue of the so-called magic transmission angles in two-dimensional Dirac semimetals. Besides, the transmission profile can be shifted by application of magnetic field, a property which may be utilized in electro-optic applications. When the applied potential is close to the Fermi level, a particular incident vector can be selected for transmission by tuning the applied magnetic field, thus enabling highly selective transmission of electrons in the bulk of Weyl semimetals. Our analytical and numerical calculations obtained by considering Dirac electrons in three regions and using experimentally feasible parameters can pave the way for relativistic tunneling applications in Weyl semimetals. △ Less

Submitted 30 May, 2016; originally announced May 2016.

Journal ref: Scientific Reports 6, 38862 (2016)

Curvature induced out of plane spin accumulation

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work we show that (real space) curvature in the geometry of curved waveguides with Rashba spin orbit interaction (RSOI) can lead to out of plane spin accumulations. We first derive the RSOI Hamiltonian on arbitrarily curved surfaces. We then analyze the effects of curvature with two distinct methods. We first apply an adiabatic approximation on gently curved, planar waveguides lying flat o… ▽ More In this work we show that (real space) curvature in the geometry of curved waveguides with Rashba spin orbit interaction (RSOI) can lead to out of plane spin accumulations. We first derive the RSOI Hamiltonian on arbitrarily curved surfaces. We then analyze the effects of curvature with two distinct methods. We first apply an adiabatic approximation on gently curved, planar waveguides lying flat on the $xy$ plane to show that analogous to the acceleration of the charge carriers by an electric field, the change in momentum direction of the charge carriers as they move along the waveguide leads to an out of plane spin accumulation. We then use the Heisenberg equations of motion to establish the relationships between spin currents and accumulations on non-planar waveguides. These relations predict the existence of out of plane spin accumulation on asymmetrically curved, non-planar waveguides. We finally solve for the eigenstates on such waveguides numerically, and present numerical results to verify our earlier analytic predictions. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Perfect valley filter in strained graphene with single barrier region

Authors: Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang, Mansoor B. A. Jalil

Abstract: We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the regions boundaries. We show that under the condition of matching magnetic field strength, strain potential, and Fermi energy, the transmitted current is com… ▽ More We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the regions boundaries. We show that under the condition of matching magnetic field strength, strain potential, and Fermi energy, the transmitted current is composed of only one valley contribution. The desired valley current can transmit with zero reflection while the electrons from the other valley are totally reflected. Thus, the system generates pure valley-polarized current with maximum conductance. The chosen parameters of uniaxial strain and magnetic field are in the range of experimental feasibility, which suggests that the proposed scheme can be realized with current technology. △ Less

Submitted 10 February, 2016; originally announced February 2016.

Journal ref: AIP Advances 6, 056303 (2016)

Dirac semimetal thin films in in-plane magnetic fields

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work we study the effects of in-plane magnetic fields on thin films of the Dirac Semimetal (DSM) \ce{Na2Bi} where one of the in-plane directions is perpendicular to the $k$-separation between the two Weyl points for each spin orientation. We show numerically that the states localized near the surface of these thin films are related to the Fermi arc states in semi-infinite slabs. Due to the… ▽ More In this work we study the effects of in-plane magnetic fields on thin films of the Dirac Semimetal (DSM) \ce{Na2Bi} where one of the in-plane directions is perpendicular to the $k$-separation between the two Weyl points for each spin orientation. We show numerically that the states localized near the surface of these thin films are related to the Fermi arc states in semi-infinite slabs. Due to the anisotropy between the two in-plane directions, the application of a magnetic field along these directions have differing effects. A field parallel to the $k$ space separation between the Weyl points leads to a broadening of the surface state band and a formation of an energy plateau, while a perpendicular field shifts the energy where the hole and particle bands meet upwards and sharpens the tips of the bands. We illustrate the effects of these changes to the bandstructure by studying the transmission from a source segment without a magnetic field to a drain segment with a field with the field and interface at various in-plane directions. △ Less

Submitted 18 June, 2016; v1 submitted 21 January, 2016; originally announced January 2016.

Effective Hamiltonian for surface states of \ce{Bi2Te3} nanocylinders with hexagonal war**

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The three-dimensional topological insulator \ce{Bi2Te3} differs from other topological insulators in the \ce{Bi2Se3} family in that the effective Hamiltonian of its surface states on a flat semi-infinite slab requires the addition of a cubic momentum hexagonal war** term in order to reproduce the experimentally measured constant energy contours. In this work, we derive the appropriate effective… ▽ More The three-dimensional topological insulator \ce{Bi2Te3} differs from other topological insulators in the \ce{Bi2Se3} family in that the effective Hamiltonian of its surface states on a flat semi-infinite slab requires the addition of a cubic momentum hexagonal war** term in order to reproduce the experimentally measured constant energy contours. In this work, we derive the appropriate effective Hamiltonian for the surface states of a \ce{Bi2Te3} \textit{cylinder} incorporating the corresponding hexagonal war** terms in a cylindrical geometry. We show that at the energy range where the surface states dominate, the effective Hamiltonian adequately reproduces the dispersion relation obtained from a full four-band Hamiltonian, which describe both the bulk and surface states. As an example application of our effective Hamiltonian, we study the transmission between two collinear \ce{Bi2Te3} cylinders magnetized in different directions perpendicular to their axes. We show that the hexagonal war** term results in a transmission profile between the cylinders which may be of utility in a multiple state magnetic memory bit. △ Less

Submitted 19 January, 2016; originally announced January 2016.

Magnified Dam** under Rashba Spin Orbit Coupling

Authors: Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: The spin orbit coupling spin torque consists of the field-like [REF: S.G. Tan et al., ar**-like terms [REF: H. Kurebayashi et al., Nature Nanotechnology 9, 211 (2014).] that have been widely studied for applications in magnetic memory. We focus, in this article, not on the spin orbit effect producing the above spin torques, but on its magnifying the dam** con… ▽ More The spin orbit coupling spin torque consists of the field-like [REF: S.G. Tan et al., ar**-like terms [REF: H. Kurebayashi et al., Nature Nanotechnology 9, 211 (2014).] that have been widely studied for applications in magnetic memory. We focus, in this article, not on the spin orbit effect producing the above spin torques, but on its magnifying the dam** constant of all field like spin torques. As first order precession leads to second order dam**, the Rashba constant is naturally co-opted, producing a magnified field-like dam** effect. The Landau-Liftshitz-Gilbert equations are written separately for the local magnetization and the itinerant spin, allowing the progression of magnetization to be self-consistently locked to the spin. △ Less

Submitted 13 November, 2015; originally announced November 2015.

Comments: 10

Gauge Physics of Spin Hall Effect

Authors: Seng Ghee Tan, Mansoor B. A. Jalil, Congson Ho, Zhuobin Siu, Shuichi Murakami

Abstract: Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlap** claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies… ▽ More Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlap** claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. The full treatment shows the Rashba 2DEG SHE conductivity to be +e/8π instead of -e/8π , and Rashba heavy hole +9e/8π instead of -9e/8π . △ Less

Submitted 17 April, 2015; originally announced April 2015.

Comments: 14 pages, 2 figures, 1 table

Efficient Dual Spin-Valley Filter In Strained Silicene

Authors: Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang, Mansoor B. A. Jalil

Abstract: We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modif… ▽ More We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modify the electrochemical potential. For the first region, we investigated the effect of the uniaxial strain in inducing angular separation of the two valley spins in momentum-space, and further spin separation by the spin dependent electric potential induced by the exchange field. We then evaluated the delta-function magnetic field and electrochemical potential combination in the second region to yield the transverse displacement for the selection of the requisite spin-valley combination. We demonstrated the optimal conditions in the first barrier to induce a highly anisotropic transmission profile, which enables controllable and efficient filtering (> 90% efficiency) by the second region for all four spin-valley combinations. Based on the analytical results, we predict the feasibility of experimental realization of dual spin-valley silicene-based filtering device. △ Less

Submitted 2 February, 2016; v1 submitted 8 April, 2015; originally announced April 2015.

Comments: 10 pages, 3 figures

Journal ref: Applied Physics Express 8, 105201 (2015)

Gate-control of spin-motive force and spin-torque in Rashba SOC systems

Authors: Cong Son Ho, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The introduction of a strong Rashba spin orbit coupling (SOC) had been predicted to enhance the spin motive force (SMF) [see Phys. Rev. Lett. {\bf 108}, 217202 (2012)]. In this work, we predict further enhancement of the SMF by time modulation of the Rashba coupling $α_R$, which induces an additional electric field $E^R_d={\dot α_R} m_e/e\hbar({\hat z}\times {\mathbf m})$. When the modulation freq… ▽ More The introduction of a strong Rashba spin orbit coupling (SOC) had been predicted to enhance the spin motive force (SMF) [see Phys. Rev. Lett. {\bf 108}, 217202 (2012)]. In this work, we predict further enhancement of the SMF by time modulation of the Rashba coupling $α_R$, which induces an additional electric field $E^R_d={\dot α_R} m_e/e\hbar({\hat z}\times {\mathbf m})$. When the modulation frequency is higher than the magnetization precessing frequency, the amplitude of this field is significantly larger than previously predicted results. Correspondingly, the spin torque on the magnetization is also effectively enhanced. Additionally, the nature of SOC induced spin torque in the system can be transformed from dam** to antidam**-like by modulating ${\dot α_R}$. We also suggest a biasing scheme to achieve rectification of SMF, {\it i.e.}, by application of a square wave voltage at the resonant frequency. Finally, we numerically estimate the resulting spin torque field arising from a Gaussian pulse time modulation of $α_R$. △ Less

Submitted 6 December, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 6 pages, 3 figures

Journal ref: New J. Phys. 17 (2015)123005

Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer

Authors: H. Y. Lv, W. J. Lu, D. F. Shao, Y. Liu, S. G. Tan, Y. P. Sun

Abstract: The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 p… ▽ More The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 preserve the semimetallic property, with the equal hole and electron carrier concentrations. Moreover, the very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices. △ Less

Submitted 29 December, 2014; originally announced December 2014.

Journal ref: EPL 110, 37004 (2015)

Disorder suppressed charge-density-wave and its origin in 1T-TaSe2-xTex

Authors: Y. Liu, D. F. Shao, W. J. Lu, L. J. Li, H. Y. Lv, X. D. Zhu, S. G. Tan, B. Yuan, L. Zu, X. C. Kan, W. H. Song, Y. P. Sun

Abstract: In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, si… ▽ More In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, similar to 1\emph{T}-TaSe$_2$ and 1\emph{T}-TaTe$_2$, the hypothetic 1\emph{T}-TaSeTe with ordered Se/Ta/Te stacking shows instability in the phonon dispersion, indicating the presence of CDW in the ideally ordered sample. The contradictory between experimental and theoretical results suggests that the CDW is suppressed by disorder in 1\emph{T}-TaSe$_{2-x}$Te$_x$. The formation and suppression of CDW are found to be independent with Fermi surface nesting based on the generated electron susceptibility calculations. The calculation of phonon linewidth suggests the strong \textbf{\emph{q}}-dependent electron-phonon coupling induced period-lattice-distortion (PLD) should be related to our observation: The do** can largely distort the TaX$_6$ (X = Se, Te) octahedra, which are disorderly distributed. The resulted puckered Ta-Ta layers are not compatible with the two-dimensional PLD. Therefore, CDW is suppressed in 1\emph{T}-TaSe$_{2-x}$Te$_x$. Our results offer an indirect evidence that PLD, which can be influenced by strong disorder, is the origin of CDW in the system. △ Less

Submitted 20 May, 2015; v1 submitted 14 December, 2014; originally announced December 2014.

Journal ref: Physical Review B 94, 045131 (2016)

Spin force and intrinsic spin Hall effect in spintronics systems

Authors: Cong Son Ho, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: We investigate the spin Hall effect (SHE) in a wide class of spin-orbit coupling systems by using spin force picture. We derive the general relation equation between spin force and spin current and show that the longitudinal force component can induce a spin Hall current, from which we reproduce the spin Hall conductivity obtained previously using Kubo's formula. This simple spin force picture giv… ▽ More We investigate the spin Hall effect (SHE) in a wide class of spin-orbit coupling systems by using spin force picture. We derive the general relation equation between spin force and spin current and show that the longitudinal force component can induce a spin Hall current, from which we reproduce the spin Hall conductivity obtained previously using Kubo's formula. This simple spin force picture gives a clear and intuitive explanation for SHE. △ Less

Submitted 10 April, 2014; originally announced April 2014.

Journal ref: EPL 107 37005 (2014)

CuSe-based layered compound Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ as a quasi-two-dimensional metal

Authors: S. G. Tan, D. F. Shao, W. J. Lu, B. Yuan, Y. Liu, J. Yang, W. H. Song, Hechang Lei, Y. P. Sun

Abstract: We have investigated the physical properties of a new layered oxyselenide Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$, which crystallizes in an unusual intergrowth structure with Cu$_{2}$Se$_{2}$ and Bi$_{2}$YO$_{4}$ layers. Electric transport measurement indicates that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ behaves metallic. Thermal transport and Hall measurements show that the type of the carriers is hole-like a… ▽ More We have investigated the physical properties of a new layered oxyselenide Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$, which crystallizes in an unusual intergrowth structure with Cu$_{2}$Se$_{2}$ and Bi$_{2}$YO$_{4}$ layers. Electric transport measurement indicates that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ behaves metallic. Thermal transport and Hall measurements show that the type of the carriers is hole-like and it may be a potential thermoelectric material at high temperatures. First principle calculations are in agreement with experimental results and show that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ is a quasi-2D metal. Further theoretical investigation suggests the ground states of the Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$-type can be tuned by designing the blocking layers, which will enrich the physical properties of these compounds. △ Less

Submitted 30 May, 2014; v1 submitted 31 March, 2014; originally announced March 2014.

Journal ref: Phys. Rev. B 90, 085144 (2014)

Spin force and the generation of sustained spin current in time-dependent Rashba and Dresselhauss systems

Authors: Cong Son Ho, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The generation of spin current and spin polarization in a 2DEG structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of the non-Abelian gauge field approach, we established the relation between the Lorentz spin force and the spin current in the SOC system, and showed that the lon… ▽ More The generation of spin current and spin polarization in a 2DEG structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of the non-Abelian gauge field approach, we established the relation between the Lorentz spin force and the spin current in the SOC system, and showed that the longitudinal component of the spin force induces a transverse spin current. For a constant (time-invariant) Rashba system, we recover the universal spin Hall conductivity of $\frac e{8π}$, derived previously via the Berry phase and semiclassical methods. In the case of a time-dependent SOC system, the spin current is sustained even under strong impurity scattering. We evaluated the ac spin current generated by a time-modulated Rashba SOC in the absence of any dc electric field. The magnitude of the spin current reaches a maximum when the modulation frequency matches the Larmor frequency of the electrons. △ Less

Submitted 17 May, 2013; originally announced May 2013.

Comments: 5 pages, 2 figures

Journal ref: J. Appl. Phys. 115, 183705 (2014)

Spin Hall effect in a simple classical picture of spin forces

Authors: Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: Spin Hall effect (SHE) in a 2D-Rashba system has been treated in the spin-dependent precession [J. Sinova et al., Phys. Rev. Letts. 92, 126603 (2004).] and the time-space gauge [T. Fujita et al., New J. Phys. 12, 013016 (2010).] approaches, both yielding SHE conductivity of σ_y^z=e/8π . Separate studies based on the concept of spin transverse force [S-Q Shen, Phys. Rev. Lett. 95, 187203 (2005).] p… ▽ More Spin Hall effect (SHE) in a 2D-Rashba system has been treated in the spin-dependent precession [J. Sinova et al., Phys. Rev. Letts. 92, 126603 (2004).] and the time-space gauge [T. Fujita et al., New J. Phys. 12, 013016 (2010).] approaches, both yielding SHE conductivity of σ_y^z=e/8π . Separate studies based on the concept of spin transverse force [S-Q Shen, Phys. Rev. Lett. 95, 187203 (2005).] provide a heuristic but not a quantifiable indication of SHE. In this paper, we provide a more complete description of the SHE using the Heisenberg approach, unifying the Yang-Mills force, the Heisenberg spin force, and the SHE σ_y^z under the classical notion of forces and accelerations. Central to this paper is the spin force equations that are satisfied by both σ_y^z and σ_x^z, the Yang-Mills, and the Heisenberg spin forces. By linking σ_y^z to the spin forces, one sees that the physics of SHE in a 2D-Rashba system is also a simple classical Lorentz force picture. △ Less

Submitted 2 April, 2013; originally announced April 2013.

Comments: 11 pages, 4 figures

Spin Torque on Magnetic Textures Coupled to the Surface of a Three-Dimensional Topological Insulator

Authors: Ji Chen, Mansoor Bin Abdul Jalil, Seng Ghee Tan

Abstract: We investigate theoretically the spin torque and magnetization dynamic in a thin ferromagnetic (FM) layer with spatially varying magnetization. The FM layer is deposited on the surface of a topological insulator (TI). In the limit of the adiabatic relaxation of electron spin along the magnetization, the interaction between the exchange interaction and the Rashba-like surface texture of a TI yields… ▽ More We investigate theoretically the spin torque and magnetization dynamic in a thin ferromagnetic (FM) layer with spatially varying magnetization. The FM layer is deposited on the surface of a topological insulator (TI). In the limit of the adiabatic relaxation of electron spin along the magnetization, the interaction between the exchange interaction and the Rashba-like surface texture of a TI yields a topological gauge field. Under the gauge field and an applied current, spin torque is induced according to the direction of the current. We derived the corresponding effective anisotropy field and hence the modified Landau-Lifshitz-Gilbert equation, which describes the spin torque and the magnetization dynamic. In addition, we study the effective field for exemplary magnetic textures, such as domain wall, skyrmion, and vortex configurations. The estimated strength of the effective field is comparable to the switching fields of typical FM materials, and hence can significantly influence the dynamics of the FM layer. △ Less

Submitted 27 March, 2013; originally announced March 2013.

Comments: 17 pages, 2 figures

High magnetoresistance in graphene nanoribbon heterojunction

Authors: S. Bala Kumar, M. B. A. Jalil, S. G. Tan

Abstract: We show a large magnetoresistance(MR) effect in a graphene heterostructure consisting of an metallic(M) and semiconductor(SC)-type armchair-graphene-nanoribbon(aGNR). In the heterostructure, the transmission across the first subband of the SC-aGNR and M-aGNR is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-li… ▽ More We show a large magnetoresistance(MR) effect in a graphene heterostructure consisting of an metallic(M) and semiconductor(SC)-type armchair-graphene-nanoribbon(aGNR). In the heterostructure, the transmission across the first subband of the SC-aGNR and M-aGNR is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-like effect, which distorts the wavefunctions. Thus, a finite transmission occurs across the heterojunction, giving rise to a large MR effect. We study the dependence of this MR on temperature and electron energy. Finally, we design a magnetic-field-effect-transistor which yields a MR of close to 100%(85%) at low(room) temperature. △ Less

Submitted 24 October, 2012; originally announced October 2012.

Suppression of superconductivity in layered Bi4O4S3 by Ag do**

Authors: S. G. Tan, P. Tong, Y. Liu, W. J. Lu, L. J. Li, B. C. Zhao, Y. P. Sun

Abstract: We report X-ray diffraction, magnetization and transport measurements for polycrystalline samples of the new layered superconductor Bi4-xAgxO4S3 (0<x<0.2). The superconducting transition temperature (TC) decreases gradually and finally suppressed for x>0.10. Accordingly, the resistivity changes from a metallic behavior for x<0.1 to a semiconductor-like behavior for x>0.1. The analysis of Seebeck c… ▽ More We report X-ray diffraction, magnetization and transport measurements for polycrystalline samples of the new layered superconductor Bi4-xAgxO4S3 (0<x<0.2). The superconducting transition temperature (TC) decreases gradually and finally suppressed for x>0.10. Accordingly, the resistivity changes from a metallic behavior for x<0.1 to a semiconductor-like behavior for x>0.1. The analysis of Seebeck coefficient shows there are two types of electron-like carriers dominate at different temperature regions, indicative of a multiband effect responsible for the transport properties. The suppression of superconductivity and the increased resistivity can be attributed to a shift of the Fermi level to the lower-energy side upon do**, which reduces the density of states at EF. Further, our result indicates the superconductivity in the parent Bi4O4S3 is intrinsic and the dopant Ag prefers to enter the BiS2 layers, which may essentially modify the electronic structure. △ Less

Submitted 27 August, 2012; originally announced August 2012.

Comments: 6 pages, 6 figures

Journal ref: Eur. Phys. J. B (2012) 85: 414

Electrical modulation of the edge channel transport in topological insulators coupled to ferromagnetic leads

Authors: Yuan Li, M. B. A. Jalil, Seng Ghee Tan, GuangHui Zhou

Abstract: The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads. The application of a side-gate voltage induces a constriction or quantum point contact (QPC) which couples the two edge channels. The transport properties of th… ▽ More The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads. The application of a side-gate voltage induces a constriction or quantum point contact (QPC) which couples the two edge channels. The transport properties of the system is calculated via the Keldysh nonequilibrium Green's function method. We found that inter-edge spin-flip coupling can significantly enhance (suppress) the charge current when the magnetization of the leads are anti-parallel (parallel) to one another. On the other hand, spin-conserving inter-edge coupling generally reduces the current by backscattering regardless of the magnetization configuration. The charge current and the conductance as a function of the bias voltage, also exhibit similar trends with respect to spin-flip coupling strength, for both parallel and anti-parallel configurations. Hence, gate voltage modulation of edge states via a QPC can provide a means of modulating the spin or charge current flow in TI-based spintronics devices. △ Less

Submitted 15 August, 2012; originally announced August 2012.

Comments: 6 pages, 3 figures, submitted to J. Appl. Phys

Journal ref: J. Appl. Phys. 112, 063710 (2012)

Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3

Authors: S. G. Tan, L. J. Li, Y. Liu, P. Tong, B. C. Zhao, W. J. Lu, Y. P. Sun

Abstract: Polycrystalline sample of the new layered superconductor Bi4O4S3 is successfully synthesized by solid-state reaction method by using Bi, S and Bi2O3 powders with one step reaction. The superconducting transition temperature (Tconset=4.5 K), the zero resistance transition temperature (Tc0=4.07 K) and the diamagnetic transition temperature (4.02 K at H=10 Oe) were confirmed by electrical transport a… ▽ More Polycrystalline sample of the new layered superconductor Bi4O4S3 is successfully synthesized by solid-state reaction method by using Bi, S and Bi2O3 powders with one step reaction. The superconducting transition temperature (Tconset=4.5 K), the zero resistance transition temperature (Tc0=4.07 K) and the diamagnetic transition temperature (4.02 K at H=10 Oe) were confirmed by electrical transport and magnetic measurements. Also, our results indicate a typical type II-superconductor behavior. In addition, a large thermoelectric effect was observed with a dimensionless thermoelectric figure of merit (ZT) of about 0.03 at 300K, indicating Bi4O4S3 can be a potential thermoelectric material. △ Less

Submitted 23 July, 2012; originally announced July 2012.

Comments: 10 pages, 4 figures

Journal ref: Physica C, 483, 94-96 (2012)

Spin torque due to non-uniform Rashba spin orbit effect

Authors: Ji Chen, Mansoor Bin Abdul Jalil, Seng Ghee Tan

Abstract: Following the early theoretical descriptions of the spin-orbit-induced spin torque [S.G. Tan et al., arXiv:0705.3502 (2007); S.G.Tan et al., Ann. Phys.326, 207 (2011)], the first experimental observation of such effect was reported by L. M. Miron et al., Nature Mater, 9, 230 (2010). We present in this article three additional spin torque terms that arise from the non-uniformity in magnetization sp… ▽ More Following the early theoretical descriptions of the spin-orbit-induced spin torque [S.G. Tan et al., arXiv:0705.3502 (2007); S.G.Tan et al., Ann. Phys.326, 207 (2011)], the first experimental observation of such effect was reported by L. M. Miron et al., Nature Mater, 9, 230 (2010). We present in this article three additional spin torque terms that arise from the non-uniformity in magnetization space of the Rashba spin-orbit effect. We propose a simple Rashba gradient device which could potentially lower switching current by n orders of magnitude, where large n measures a small magnetization change. △ Less

Submitted 25 June, 2012; originally announced June 2012.

Comments: 11 pages, 1 figure

Inverse Spin Hall Effect in Ferromagnetic Metal with Rashba Spin Orbit Coupling

Authors: M. -J. Xing, M. B. A. Jalil, Seng Ghee Tan, Y. Jiang

Abstract: We report an intrinsic form of the inverse spin Hall effect (ISHE) in ferromagnetic (FM) metal with Rashba spin orbit coupling (RSOC), which is driven by a normal charge current. Unlike the conventional form, the ISHE can be induced without the need for spin current injection from an external source. Our theoretical results show that Hall voltage is generated when the FM moment is perpendicular to… ▽ More We report an intrinsic form of the inverse spin Hall effect (ISHE) in ferromagnetic (FM) metal with Rashba spin orbit coupling (RSOC), which is driven by a normal charge current. Unlike the conventional form, the ISHE can be induced without the need for spin current injection from an external source. Our theoretical results show that Hall voltage is generated when the FM moment is perpendicular to the ferromagnetic layer. The polarity of the Hall voltage is reversed upon switching the FM moment to the opposite direction, thus promising a useful readback mechanism for memory or logic applications. △ Less

Submitted 28 February, 2012; originally announced February 2012.

Comments: 4 pages, 5 figures

Non-equilibrium spatial distribution of Rashba spin torque in ferromagnetic metal layer

Authors: N. L. Chung, M. B. A. Jalil, S. G. Tan

Abstract: We study the spatial distribution of spin torque induced by a strong Rashba spin-orbit coupling (RSOC) in a ferromagnetic (FM) metal layer, using the Keldysh non-equilibrium Green's function method. In the presence of the s-d interaction between the non-equilibrium conduction electrons and the local magnetic moments, the RSOC effect induces a torque on the moments, which we term as the Rashba spin… ▽ More We study the spatial distribution of spin torque induced by a strong Rashba spin-orbit coupling (RSOC) in a ferromagnetic (FM) metal layer, using the Keldysh non-equilibrium Green's function method. In the presence of the s-d interaction between the non-equilibrium conduction electrons and the local magnetic moments, the RSOC effect induces a torque on the moments, which we term as the Rashba spin torque. A correlation between the Rashba spin torque and the spatial spin current is presented in this work, clearly map** the spatial distribution of Rashba Spin torque in a nano-sized ferromagnetic device. When local magnetism is turned on, the out-of-plane (Sz) Spin Hall effect (SHE) is disrupted, but rather unexpectedly an in-plane (Sy) SHE is detected. We also study the effect of Rashba strength (α_R) and splitting exchange (Δ) on the non-equilibrium Rashba spin torque averaged over the device. Rashba spin torque allows an efficient transfer of spin momentum such that a typical switching field of 20 mT can be attained with a low current density of less than 10^6 A/cm^2. △ Less

Submitted 24 February, 2012; v1 submitted 4 February, 2012; originally announced February 2012.

High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

Authors: Gengchiau Liang, S. Bala kumar, M. B. A. Jalil, S. G. Tan

Abstract: A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B=0T is greatly decreased while the current at B>0T is relatively large due to the band-to-band tunneling effects, resulting in a high ma… ▽ More A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B=0T is greatly decreased while the current at B>0T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at room-temperature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias. △ Less

Submitted 26 July, 2011; originally announced July 2011.

Comments: http://dx.doi.org/10.1063/1.3624459

Journal ref: Appl. Phys. Lett. 99, 083107 (2011)

Topological Insulator Cell for Memory and Magnetic Sensor Applications

Authors: T. Fujita, M. B. A. Jalil, S. G. Tan

Abstract: We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. △ Less

Submitted 16 June, 2011; v1 submitted 13 June, 2011; originally announced June 2011.

Comments: 4 pages, 2 figures. Updated figures and text

Journal ref: Appl. Phys. Express 4, 094201 (2011)

Nonequilibrium Keldysh Formalism for Interacting Leads -- Application to Quantum Dot Transport Driven by Spin Bias

Authors: Yuan Li, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The conductance through a mesoscopic system of interacting electrons coupled to two adjacent leads is conventionally derived via the Keldysh nonequilibrium Green's function technique, in the limit of noninteracting leads [see Y. Meir \emph{et al.}, Phys. Rev. Lett. \textbf{68}, 2512 (1991)]. We extend the standard formalism to cater for a quantum dot system with Coulombic interactions between the… ▽ More The conductance through a mesoscopic system of interacting electrons coupled to two adjacent leads is conventionally derived via the Keldysh nonequilibrium Green's function technique, in the limit of noninteracting leads [see Y. Meir \emph{et al.}, Phys. Rev. Lett. \textbf{68}, 2512 (1991)]. We extend the standard formalism to cater for a quantum dot system with Coulombic interactions between the quantum dot and the leads. The general current expression is obtained by considering the equation of motion of the time-ordered Green's function of the system. The nonequilibrium effects of the interacting leads are then incorporated by determining the contour-ordered Green's function over the Keldysh loop and applying Langreth's theorem. The dot-lead interactions significantly increase the height of the Kondo peaks in density of states of the quantum dot. This translates into two Kondo peaks in the spin differential conductance when the magnitude of the spin bias equals that of the Zeeman splitting. There also exists a plateau in the charge differential conductance due to the combined effect of spin bias and the Zeeman splitting. The low-bias conductance plateau with sharp edges is also a characteristic of the Kondo effect. The conductance plateau disappears for the case of asymmetric dot-lead interaction. △ Less

Submitted 19 March, 2012; v1 submitted 25 March, 2011; originally announced March 2011.

Comments: 11 pages, 3 figures, accepted by Annals of Physics

Journal ref: Annals of Physics 327, 1484 (2012)

The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons

Authors: S. Bala Kumar, M. B. A. Jalil, S. G. Tan, Gengchiau Liang

Abstract: We developed a unified mesoscopic transport model for graphene nanoribbons, which combines the non-equilibrium Green's function (NEGF) formalism with the real-space π-orbital model. Based on this model, we probe the spatial distributions of electrons under a magnetic field, in order to obtain insights into the various signature Hall effects in disordered armchair graphene nanoribbons (AGNR). In th… ▽ More We developed a unified mesoscopic transport model for graphene nanoribbons, which combines the non-equilibrium Green's function (NEGF) formalism with the real-space π-orbital model. Based on this model, we probe the spatial distributions of electrons under a magnetic field, in order to obtain insights into the various signature Hall effects in disordered armchair graphene nanoribbons (AGNR). In the presence of a uniform perpendicular magnetic field (B\perp-field), a perfect AGNR shows three distinct spatial current profiles at equilibrium, depending on its width. Under non-equilibrium conditions (i.e. in the presence of an applied bias), the net electron flow is restricted to the edges and occurs in opposite directions depending on whether the Fermi level lies within the valence or conduction band. For electrons at energy level below the conduction window, the B\perp-field gives rise to local electron flux circulation, although the global flux is zero. Our study also reveals the suppression of electron backscattering as a result of the edge transport which is induced by the B\perp-field. This phenomenon can potentially mitigate the undesired effects of disorders, such as the bulk and edge vacancies, on the transport properties of AGNR. Lastly, we show that the effect of B\perp-field on electronic transport is less significant in the multimode compared to the single mode electron transport. △ Less

Submitted 2 August, 2010; originally announced August 2010.

Comments: 21 pages, 4 figures

Journal ref: S Bala Kumar et al 2010 J. Phys.: Condens. Matter 22 37530

Charge fractionalization in biased bilayer graphene

Authors: J. C. Martinez, M. B. A. Jalil, S. G. Tan

Abstract: We study charge fractionalization in bilayer graphene which is intimately related to its zero modes. In the unbiased case, the valley zero modes occur in pairs rendering it unsuitable for charge fractionalization. A bias plays the role of a bosonic field with nontrivial topology allowing for the exploration of Dirac-like dynamics at higher particle momenta. It also induces an odd number of zero mo… ▽ More We study charge fractionalization in bilayer graphene which is intimately related to its zero modes. In the unbiased case, the valley zero modes occur in pairs rendering it unsuitable for charge fractionalization. A bias plays the role of a bosonic field with nontrivial topology allowing for the exploration of Dirac-like dynamics at higher particle momenta. It also induces an odd number of zero modes, which, together with the conjugation symmetry between positive and negative energy states, are the requisite conditions for charge fractionalization. A self-conjugate, localized zero mode is constructed for a semi-infinite graphene sheet with zigzag edge; scenarios can occur readily where one sublattice component (pseudospin) dominates. While the other valley also has a similar zero mode, a layer asymmetry can be invoked to lift this degeneracy allowing for detection of distinguishable charge-1/2 edge states per valley. △ Less

Submitted 8 July, 2010; originally announced July 2010.

Comments: 15 pages, 5 figures

Local spin polarization of Landau levels under Rashba spin-orbit coupling

Authors: T. Fujita, M. B. A. Jalil, S. G. Tan, F. Wan

Abstract: We investigate the local spin polarization texture of Landau levels under Rashba spin-orbit coupling in bulk two-dimensional electron gas (2DEG) systems. In order to analyze the spin polarization as a function of two-dimensional coordinates within the 2DEG, we first solve the system eigenstates in the symmetric gauge. Our exact analytical wavefunction solutions are shown to be gauge invariant with… ▽ More We investigate the local spin polarization texture of Landau levels under Rashba spin-orbit coupling in bulk two-dimensional electron gas (2DEG) systems. In order to analyze the spin polarization as a function of two-dimensional coordinates within the 2DEG, we first solve the system eigenstates in the symmetric gauge. Our exact analytical wavefunction solutions are shown to be gauge invariant with solutions obtained in the commonly used Landau gauge. We illustrate the two-dimensional spatial spin profile for a single Landau level and suggest means to measure and utilize the local polarization in practice. △ Less

Submitted 23 June, 2010; originally announced June 2010.

Comments: 12 pages, 1 figure

Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation

Authors: S. Bala Kumar, M. B. A. Jalil, S. G. Tan, Gengchiau Liang

Abstract: The electronic properties of armchair graphene nanoribbons (AGNRs) can be significantly modified from semiconducting to metallic states, by applying a uniform perpendicular magnetic field (B-field). Here, we theoretically study the bandgap modulation induced by a perpendicular B-field. The applied B-field causes the lowest conduction subband and the top-most valence subband to move closer to one a… ▽ More The electronic properties of armchair graphene nanoribbons (AGNRs) can be significantly modified from semiconducting to metallic states, by applying a uniform perpendicular magnetic field (B-field). Here, we theoretically study the bandgap modulation induced by a perpendicular B-field. The applied B-field causes the lowest conduction subband and the top-most valence subband to move closer to one another to form the n=0 Landau level. We exploit this effect to realize a device relevant MR modulation. Unlike in conventional spin-valves, this intrinsic MR effect is realized without the use of any ferromagnetic leads. The AGNRs with number of dimers, Na=3p+1 [p=1,2,3,...] show the most promising behavior for MR applications, with large conductance modulation and hence, high MR ratio at the optimal source-drain bias. However, the MR is suppressed at higher temperature due to the spread of the Fermi function distribution. We also investigate the importance of the source-drain bias in optimizing the MR. Lastly, we show that edge roughness of AGNRs has the unexpected effect of improving the magnetic sensitivity of the device and thus increasing the MR ratio. △ Less

Submitted 30 June, 2010; v1 submitted 11 June, 2010; originally announced June 2010.

Comments: 13 pages, 5 figures

Journal ref: J. Appl. Phys. 108, 033709 (2010)

Valley filter in strain engineered graphene

Authors: T. Fujita, M. B. A. Jalil, S. G. Tan

Abstract: We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic gates. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, t… ▽ More We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic gates. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters. △ Less

Submitted 8 June, 2010; v1 submitted 27 May, 2010; originally announced May 2010.

Comments: 4 pages, 3 figures; minor corrections, updated Figs. 2 and 3, added references

Journal ref: Appl. Phys. Lett. 97, 043508 (2010)