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Formation of Beta-Indium Selenide Layers Grown via Selenium Passivation of InP(111)B Substrate
Authors:
Kaushini S. Wickramasinghe,
Candice Forrester,
Martha R. McCartney,
David J. Smith,
Maria C. Tamargo
Abstract:
Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In2Se3 also provides the important advantage of tuning the electrical properties of ultra-thin layers with an external electrical and…
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Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In2Se3 also provides the important advantage of tuning the electrical properties of ultra-thin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, In2Se3 has many different polymorphs, and it has been challenging to synthesize single-phase material, especially using scalable growth methods, as needed for technological applications. In this paper, we use aberration-corrected scanning transmission electron microscopy to characterize the microstructure of twin-free single-phase ultra-thin layers of beta-In2Se3, prepared by a unique molecular beam epitaxy approach. We emphasize features of the In2Se3 layer and In2Se3/InP interface which provide evidence for understanding the growth mechanism of the single-phase In2Se3. This novel approach for forming high-quality twin-free single phase two-dimensional crystals on InP substrates is likely to be applicable to other technologically important substrates.
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Submitted 15 May, 2024; v1 submitted 15 May, 2024;
originally announced May 2024.
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Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1-x topological materials with exceedingly high Curie temperature
Authors:
Candice R. Forrester,
Christophe Testelin,
Kaushini Wickramasinghe,
Ido Levy,
Dominique Demaille,
David Hrabovski,
Xiaxin Ding,
Lia Krusin-Elbaum,
Gustavo E. Lopez,
Maria C. Tamargo
Abstract:
Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and opt…
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Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and optimize TC, particularly through defect engineering of these structures. Most recently we showed evidence of TC values up to 80K for (MnSb2Te4)x(Sb2Te3)1-x, where x is greater than or equal to 0.7 and less than or equal to 0.85, by controlling the compositions and Mn content in these structures. Here we show further enhancement of the TC, as high as 100K, by maintaining high Mn content and reducing the growth rate from 0.9 nm/min to 0.5 nm/min. Derivative curves reveal the presence of two TC components contributing to the overall value and propose TC1 and TC2 have distinct origins: excess Mn in SLs and Mn in Sb2-yMnyTe3QLs alloys, respectively. In pursuit of elucidating the mechanisms promoting higher Curie temperature values in this system, we show evidence of structural disorder where Mn is occupying not only Sb sites but also Te sites, providing evidence of significant excess Mn and a new crystal structure:(Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x. Our work shows progress in understanding how to control magnetic defects to enhance desired magnetic properties and the mechanism promoting these high TC in magnetic topological materials such as (Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x.
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Submitted 17 November, 2023;
originally announced November 2023.
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Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates
Authors:
Kaushini S. Wickramasinghe,
Candice Forrester,
Maria C. Tamargo
Abstract:
Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies and twin domains. For terahertz device applications, twinning is sho…
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Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies and twin domains. For terahertz device applications, twinning is shown to be highly deleterious. Previous attempts to reduce twins using technologically important InP(111) substrates have been promising, but have failed to completely suppress twin domains while preserving high structural quality. Here we report growth of twin-free molecular beam epitaxial Bi2Se3 and Sb2Te3 structures on ultra-thin In2Se3 layers formed by a novel selenium passivation technique during the oxide desorption of smooth, non-vicinal InP(111)B substrates, without the use of an indium source. The formation of un-twinned In2Se3 provides a favorable template to fully suppress twin domains in 3D-TIs, greatly broadening novel device applications in the terahertz regime.
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Submitted 21 February, 2023;
originally announced February 2023.
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Compositional Control and Optimization of Molecular Beam Epitaxial Growth of (Sb2Te3)x(MnSb2Te4)y Magnetic Topological Insulators
Authors:
Ido Levy,
Candice Forrester,
Haiming Deng,
Manuel Goldan,
Martha R. McCartney,
David J. Smith,
Christophe Testelin,
Lia Krusin-Elbaum,
Maria C. Tamargo
Abstract:
Magnetic topological insulators such as MnBi2Te4 and MnSb2Te4 are promising hosts of novel physical phenomena such as quantum anomalous Hall effect and intrinsic axion insulator state, both potentially important for the implementation in topological spintronics and error-free quantum computing. In the bulk, the materials are antiferromagnetic but appropriate stacking with non-magnetic layers or ex…
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Magnetic topological insulators such as MnBi2Te4 and MnSb2Te4 are promising hosts of novel physical phenomena such as quantum anomalous Hall effect and intrinsic axion insulator state, both potentially important for the implementation in topological spintronics and error-free quantum computing. In the bulk, the materials are antiferromagnetic but appropriate stacking with non-magnetic layers or excess Mn in the crystal lattice can induce a net ferromagnetic alignment. In this work we report the growth of (Sb2Te3)x(MnSb2Te4)y layers with varying Mn content by molecular beam epitaxy. The Mn flux fraction provided during growth controls the percent of MnSb2Te4 that is formed in the resulting layers by a self-assembly process. Highly crystalline layers with compositions varying between Sb2Te3 (y=0) and MnSb2Te4 (x=0) were obtained. The results show that Mn incorporates as a structural component to form MnSb2Te4, and as an impurity element both in Sb2Te3 and in MnSb2Te4. Two modifications of the growth conditions were implemented to enhance the incorporation of Mn as a structural element to form MnSb2Te4. Annealing of a thin portion of the layer at the beginning of growth (pre-anneal step), and increasing the growth temperature, both result in a larger percent of MnSb2Te4 for similar Mn flux fractions during growth. Samples having at least a few percent of MnSb2Te4 layers exhibit ferromagnetic behavior likely due to the excess Mn in the system which stabilizes on Sb sites as MnSb antisite defects.
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Submitted 12 December, 2021;
originally announced December 2021.
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Adsorption, desorption, and interdiffusion in atomic layer epitaxy of CdTe and CdZnTe
Authors:
E. M. Larramendi,
O. de Melo,
M. Hernández Vélez,
M. C. Tamargo
Abstract:
The mechanisms controlling the growth rate and composition of epitaxial CdTe and CdZnTe films were studied. The films were grown by isothermal closed space configuration technique. A GaAs 100 substrate was exposed sequentially to the elemental sources, Zn, Te, and Cd, in isothermal conditions. While growth of ZnTe followed an atomic layer epitaxy, ALE, regime self regulated at one monolayer per cy…
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The mechanisms controlling the growth rate and composition of epitaxial CdTe and CdZnTe films were studied. The films were grown by isothermal closed space configuration technique. A GaAs 100 substrate was exposed sequentially to the elemental sources, Zn, Te, and Cd, in isothermal conditions. While growth of ZnTe followed an atomic layer epitaxy, ALE, regime self regulated at one monolayer per cycle; the CdTe films revealed different growth rates in dependence of the growth parameters,exposure and purge times. Combination of short purge times and larger Cd exposure times led to not self regulated growth regime for CdTe. This is ascribed to large Cd coverages that were dependent on Cd exposure times, following a Brunauer-Emmett and Teller-type adsorption. However, for longer purge times and or short Cd exposure times, an ALE self regulated regime was achieved with 2 ML per cycle. In this sense, the self-regulation of the growth is limited by desorption, instead of absorption, as in the traditional growth technique. Cd atoms substitution by Zn atoms and subsequent evaporation of surface Cd atoms during Zn exposure has been proved. The influence of these facts on the growth and composition of the alloy is discussed.
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Submitted 4 October, 2019;
originally announced October 2019.
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Advanced material system for the design of an intermediate band solar cell: type-II CdTe quantum dots in a ZnCdSe matrix
Authors:
V. Deligiannakis,
G. Ranepura,
I. L. Kuskovsky,
M. C. Tamargo
Abstract:
We explore CdTe fractional monolayer quantum dots (QDs) in a ZnCdSe host matrix for potential application in an intermediate band solar cell device. Careful consideration has been taken during the initiation of the growth process of QDs by migration enhanced epitaxy, in order to avoid the formation of undesirable interfacial layers that can form due to the lack of common anion between the two mate…
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We explore CdTe fractional monolayer quantum dots (QDs) in a ZnCdSe host matrix for potential application in an intermediate band solar cell device. Careful consideration has been taken during the initiation of the growth process of QDs by migration enhanced epitaxy, in order to avoid the formation of undesirable interfacial layers that can form due to the lack of common anion between the two materials. A superlattice structure of 100 periods of alternating QD and spacer layers is analyzed by high resolution X-ray diffraction (XRD) and photoluminescent (PL) spectroscopy. Simple arguments are used following continuum elastic theory to deduce the size of the dots and the strain within the superlattice from XRD data. This is further verified using PL and used in the energy calculations that yield the values of the intermediate band energy. The results suggest that the optimized materials are highly suitable for these high efficiency solar cells.
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Submitted 31 July, 2019;
originally announced August 2019.
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Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
Authors:
Marcel S. Claro,
Abhinandan Gangopadhyay,
David J. Smith,
Maria C. Tamargo
Abstract:
We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectrosco…
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We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectroscopy is presented. The quantum dots are crystalline, with hexagonal shape, and have average dimensions of 12 nm height (12 quintuple layers) and 46 nm width, and a density of $8.5 \cdot 10^9 cm^{-2}$. This droplet growth technique provides a means to produce topological insulator QDs in a reproducible and controllable way, providing convenient access to a promising quantum material with singular spin properties.
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Submitted 11 October, 2018;
originally announced October 2018.
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Optical Aharonov-Bohm effect in stacked type-II quantum dots
Authors:
Igor L Kuskovsky,
W. MacDonald,
A. O. Govorov,
L. Muroukh,
X. Wei,
M. C. Tamargo,
M. Tadic,
F. M. Peeters
Abstract:
Excitons in vertically stacked type-II quantum dots experience the topological magnetic phase and demonstrate the Aharonov-Bohm oscillations in the emission intensity. Photoluminescence of vertically stacked ZnTe/ZnSe quantum dots is measured in magnetic fields up to 31 T. The Aharonov-Bohm oscillations are found in the magnetic-field dependence of emission intensity. The positions of the peaks…
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Excitons in vertically stacked type-II quantum dots experience the topological magnetic phase and demonstrate the Aharonov-Bohm oscillations in the emission intensity. Photoluminescence of vertically stacked ZnTe/ZnSe quantum dots is measured in magnetic fields up to 31 T. The Aharonov-Bohm oscillations are found in the magnetic-field dependence of emission intensity. The positions of the peaks of the emission intensity are in a good agreement with numerical simulations of excitons in stacked quantum dots.
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Submitted 29 June, 2006;
originally announced June 2006.
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Electroreflectance spectroscopy in self-assembled quantum dots: lens symmetry
Authors:
A. H. Rodríguez,
C. Trallero-Giner,
Martín Muñoz,
María C. Tamargo
Abstract:
Modulated electroreflectance spectroscopy $ΔR/R$ of semiconductor self-assembled quantum dots is investigated. The structure is modeled as dots with lens shape geometry and circular cross section. A microscopic description of the electroreflectance spectrum and optical response in terms of an external electric field (${\bf F}$) and lens geometry have been considered. The field and lens symmetry…
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Modulated electroreflectance spectroscopy $ΔR/R$ of semiconductor self-assembled quantum dots is investigated. The structure is modeled as dots with lens shape geometry and circular cross section. A microscopic description of the electroreflectance spectrum and optical response in terms of an external electric field (${\bf F}$) and lens geometry have been considered. The field and lens symmetry dependence of all experimental parameters involved in the $ΔR/R$ spectrum have been considered. Using the effective mass formalism the energies and the electronic states as a function of ${\bf F}$ and dot parameters are calculated. Also, in the framework of the strongly confined regime general expressions for the excitonic binding energies are reported. Optical selection rules are derived in the cases of the light wave vector perpendicular and parallel to $% {\bf F}$. Detailed calculation of the Seraphin coefficients and electroreflectance spectrum are performed for the InAs and CdSe nanostructures. Calculations show good agreement with measurements recently performed on CdSe/ZnSe when statistical distribution on size is considered, explaining the main observed characteristic in the electroreflectance spectra.
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Submitted 9 July, 2005;
originally announced July 2005.
