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Measurement of exciton fraction of microcavity exciton-polaritons using transfer-matrix modeling
Authors:
Jonathan Beaumariage,
Zheng Sun,
Hassan Alnatah,
Qi Yao,
David M. Myers,
Mark Steger,
Ken West,
Kirk Baldwin,
Loren N. Pfeiffer,
Man Chun Alan Tam,
Zbig R. Wailewski,
David W. Snoke
Abstract:
We present a careful calibration of the exciton fraction of polaritons in high-$Q$ ($\sim 300,000$), long-lifetime ($\sim 300$ ps), GaAs/AlGaAs microcavities.This is a crucial parameter for many-body theories which include the polariton-polariton interactions.It is much harder to establish this number in high-$Q$ structures compared to low-$Q$ structures, because the upper polariton is nearly invi…
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We present a careful calibration of the exciton fraction of polaritons in high-$Q$ ($\sim 300,000$), long-lifetime ($\sim 300$ ps), GaAs/AlGaAs microcavities.This is a crucial parameter for many-body theories which include the polariton-polariton interactions.It is much harder to establish this number in high-$Q$ structures compared to low-$Q$ structures, because the upper polariton is nearly invisible in high-$Q$ cavities.We present a combination of photoluminescence, photoluminescence excitation, and reflectivity measurements to highly constrain the fit model, and compare the results of this model to the results from low-$Q$ structures.We present a fitted curve of exciton fraction as a function of the lower polariton energy for multiple samples which have been used in prior experiments.
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Submitted 17 June, 2024;
originally announced June 2024.
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High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
A. Elbaroudy,
A. W. M. Jordan,
F. Thompson,
George Nichols,
Y. Shi,
Man Chun Tam,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$Å are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $μ$V and critical current densities up to 9.6 $μ$A/$μ$m, among the largest values reported for Nb-InAs SNS devices.
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Submitted 22 May, 2024;
originally announced May 2024.
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Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
Authors:
A. Elbaroudy,
B. Khromets,
F. Sfigakis,
E. Bergeron,
Y. Shi,
M. C. A. Tam,
T. Blaikie,
George Nichols,
J. Baugh,
Z. R. Wasilewski
Abstract:
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a th…
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Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.
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Submitted 19 April, 2024; v1 submitted 27 January, 2024;
originally announced January 2024.
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Novel 3D Reciprocal Space Visualization of Strain Relaxation in InSb on GaAs Substrates
Authors:
T. Blaikie,
Y. Shi,
M. C. Tam,
B. D. Moreno,
Z. R. Wasilewski
Abstract:
This study introduces the Reciprocal Space Polar Visualization (RSPV) method, a novel approach for visualizing X-ray diffraction-based reciprocal space data. RSPV allows for the precise separation of tilt and strain, facilitating their individual analysis. InSb was grown by molecular beam epitaxy (MBE) on two (001) GaAs substrates $\unicode{x2014}$ one with no misorientation (Sample A)…
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This study introduces the Reciprocal Space Polar Visualization (RSPV) method, a novel approach for visualizing X-ray diffraction-based reciprocal space data. RSPV allows for the precise separation of tilt and strain, facilitating their individual analysis. InSb was grown by molecular beam epitaxy (MBE) on two (001) GaAs substrates $\unicode{x2014}$ one with no misorientation (Sample A) $\unicode{x2014}$ one with 2° surface misorientation from the (001) planes (Sample B). There is a substantial lattice mismatch with the substrate and this results in the generation of defects within the InSb layer during growth. To demonstrate RSPV's effectiveness, a comprehensive comparison of surface morphology, dislocation density, strain, and tilt was conducted. RSPV revealed previously unobserved features of the (004) InSb Bragg peak, partially explained by the presence of threading dislocations and oriented abrupt steps (OASs). Surface morphologies examined by an atomic force microscope (AFM) revealed that Sample B had significantly lower root mean square (RMS) roughness. Independent estimates of threading dislocation density (TDD) using X-ray diffraction (XRD) and electron channelling contrast imaging (ECCI) confirmed that Sample B exhibited a significantly lower TDD than Sample A. XRD methods further revealed unequal amounts of $α$ and $β$ type threading dislocations in both samples, contributing to an anisotropic Bragg peak. RSPV is shown to be a robust method for exploring 3D reciprocal space in any crystal, demonstrating that growing InSb on misoriented GaAs produced a higher-quality crystal compared to an on-orientation substrate.
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Submitted 24 January, 2024;
originally announced January 2024.
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Coherence measurements of polaritons in thermal equilibrium reveal a power law for two-dimensional condensates
Authors:
Hassan Alnatah,
Qi Yao,
Jonathan Beaumariage,
Shouvik Mukherjee,
Man Chun Tam,
Zbigniew Wasilewski,
Ken West,
Kirk Baldwin,
Loren N. Pfeiffer,
David W. Snoke
Abstract:
We have created a spatially homogeneous polariton condensate in thermal equilibrium, up to very high condensate fraction. Under these conditions, we have measured the coherence as a function of momentum, and determined the total coherent fraction of this boson system from very low density up to density well above the condensation transition. These measurements reveal a consistent power law for the…
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We have created a spatially homogeneous polariton condensate in thermal equilibrium, up to very high condensate fraction. Under these conditions, we have measured the coherence as a function of momentum, and determined the total coherent fraction of this boson system from very low density up to density well above the condensation transition. These measurements reveal a consistent power law for the coherent fraction as a function of the total density over nearly three orders of its magnitude. The same power law is seen in numerical simulations solving the two-dimensional Gross-Pitaevskii equation for the equilibrium coherence. This power law has not been predicted by prior analytical theories.
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Submitted 11 April, 2024; v1 submitted 9 August, 2023;
originally announced August 2023.
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Stable electroluminescence in ambipolar dopant-free lateral p-n junctions
Authors:
Lin Tian,
Francois Sfigakis,
Arjun Shetty,
Ho-Sung Kim,
Nachiket Sherlekar,
Sara Hosseini,
Man Chun Tam,
Brad van Kasteren,
Brandon Buonacorsi,
Zach Merino,
Stephen R. Harrigan,
Zbigniew Wasilewski,
Jonathan Baugh,
Michael E. Reimer
Abstract:
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppr…
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Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.
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Submitted 15 August, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Terahertz semiconductor laser source at -12 C
Authors:
Ali Khalatpour,
Man Chun Tam,
Sadhvikas J. Addamane,
John Reno,
Zbig Wasilewski,
Qing Hu
Abstract:
Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and t…
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Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and the achievement revitalized hope in the THz community in pursuit of higher temperature operations. In this paper, we report on further improvement in operating temperature to ~261 K (-12 0C) by judiciously optimizing key parameters and discuss the challenges ahead in achieving room temperature operation.
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Submitted 15 November, 2022;
originally announced November 2022.
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Semiconductor nanowire metamaterial for broadband near-unity absorption
Authors:
Burak Tekcan,
Brad van Kasteren,
Sasan V. Grayli,
Daozhi Shen,
Man Chun Tam,
Dayan Ban,
Zbigniew Wasilewski,
Adam W. Tsen,
Michael E. Reimer
Abstract:
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required. Typically, commercially available portable single-photon detectors in the infrared are made from bulk semiconductors and have efficiencies well below unity. Here, we des…
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The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required. Typically, commercially available portable single-photon detectors in the infrared are made from bulk semiconductors and have efficiencies well below unity. Here, we design a novel semiconductor nanowire metamaterial, and show that by carefully arranging an InGaAs nanowire array and by controlling their shape, we demonstrate near-unity absorption efficiency at room temperature. We experimentally show an average measured efficiency of 93% (simulated average efficiency of 97%) over an unprecedented wavelength range from 900 nm to 1500 nm. We further show that the near-unity absorption results from the collective response of the nanowire metamaterial, originating from both coupling into leaky resonant waveguide and transverse modes. These coupling mechanisms cause light to be absorbed directly from the top and indirectly as light scatters from one nanowire to neighbouring ones. This work leads to the possible development of a new generation of quantum detectors with unprecedented broadband near-unity absorption in the infrared, while operating near room temperature for a wider range of applications.
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Submitted 27 February, 2022;
originally announced February 2022.
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Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
Authors:
B. Buonacorsi,
F. Sfigakis,
A. Shetty,
M. C. Tam,
H. S. Kim,
S. R. Harrigan,
F. Hohls,
M. E. Reimer,
Z. R. Wasilewski,
J. Baugh
Abstract:
We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance consideri…
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We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pum** in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.
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Submitted 16 September, 2021; v1 submitted 26 February, 2021;
originally announced February 2021.
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Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
Authors:
A. Shetty,
F. Sfigakis,
W. Y. Mak,
K. Das Gupta,
B. Buonacorsi,
M. C. Tam,
H. S. Kim,
I. Farrer,
A. F. Croxall,
H. E. Beere,
A. R. Hamilton,
M. Pepper,
D. G. Austing,
S. A. Studenikin,
A. Sachrajda,
M. E. Reimer,
Z. R. Wasilewski,
D. A. Ritchie,
J. Baugh
Abstract:
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i…
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Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.
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Submitted 21 December, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
