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A Natural Language Processing-Based Classification and Mode-Based Ranking of Musculoskeletal Disorder Risk Factors
Authors:
Md Abrar Jahin,
Subrata Talapatra
Abstract:
This research delves into Musculoskeletal Disorder (MSD) risk factors, using a blend of Natural Language Processing (NLP) and mode-based ranking. The aim is to refine understanding, classification, and prioritization for focused prevention and treatment. Eight NLP models are evaluated, combining pre-trained transformers, cosine similarity, and distance metrics to categorize factors into personal,…
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This research delves into Musculoskeletal Disorder (MSD) risk factors, using a blend of Natural Language Processing (NLP) and mode-based ranking. The aim is to refine understanding, classification, and prioritization for focused prevention and treatment. Eight NLP models are evaluated, combining pre-trained transformers, cosine similarity, and distance metrics to categorize factors into personal, biomechanical, workplace, psychological, and organizational classes. BERT with cosine similarity achieves 28% accuracy; sentence transformer with Euclidean, Bray-Curtis, and Minkowski distances scores 100%. With 10-fold cross-validation, statistical tests ensure robust results. Survey data and mode-based ranking determine severity hierarchy, aligning with the literature. "Working posture" is the most severe, highlighting posture's role. Survey insights emphasize "Job insecurity," "Effort reward imbalance," and "Poor employee facility" as significant contributors. Rankings offer actionable insights for MSD prevention. The study suggests targeted interventions, workplace improvements, and future research directions. This integrated NLP and ranking approach enhances MSD comprehension and informs occupational health strategies.
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Submitted 30 March, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition
Authors:
Lucas M. Sassi,
Sathvik Ajay Iyengar,
Anand B. Puthirath,
Yuefei Huang,
Xingfu Li,
Tanguy Terlier,
Ali Mojibpour,
Ana Paula C. Teixeira,
Palash Bharadwaj,
Chandra Sekhar Tiwary,
Robert Vajtai,
Saikat Talapatra,
Boris Yakobson,
Pulickel M. Ajayan
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for c…
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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for crystal growth. Additionally, deleterious and time-consuming transfer processes and multiple steps involved in channel/contact engineering can cripple device performance. This work demonstrates kinetics-governed in-situ growth regimes (surface or edge growth from gold) of WSe2 and provides a mechanistic understanding of these regimes via energetics across various material interfaces. As a proof-of-concept, field effect transistors (FET) with an in-situ grown WSe2 channel across Au contacts are fabricated, demonstrating a 2D semiconductor transistor via a transfer-free method within the 450-600 C 2h-time window requirement BEOL integration. We leverage directional edge growth to fabricate contacts with robust thickness-dependent Schottky-to-Ohmic behavior. By transitioning between Au and SiO2 growth substrates in situ, this work achieves strain-induced subthreshold swing of 140 mV/decade, relatively high mobility of 107 +- 19 cm2V-1s-1, and robust ON/OFF ratios 10^6 in the fabricated FETs.
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Submitted 23 May, 2023;
originally announced May 2023.
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Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide
Authors:
Prasanna D. Patil,
Milinda Wasala,
Sujoy Ghosh,
Sidong Lei,
Saikat Talapatra
Abstract:
Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estima…
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Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estimate the band-gap energies E_g(T) of InSe at various temperatures. Our measurements indicate that room temperature E_g value for InSe flake was ~ 1.254 eV, which increased to a value of ~ 1.275 eV at low temperatures. The estimation of Debye temperatures by analysing the observed experimental variation of E_g as a function of T using several theoretical models is presented and discussed.
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Submitted 10 April, 2021;
originally announced April 2021.
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Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors
Authors:
Milinda Wasala,
Prasanna Patil,
Sujoy Ghosh,
Lincoln Weber,
Sidong Lei,
Saikat Talapatra
Abstract:
Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids are crucial for develo** optoelectronics applications. Here we present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thickness (t, 20 nm < t < 100 nm) were investigated with a continu…
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Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids are crucial for develo** optoelectronics applications. Here we present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thickness (t, 20 nm < t < 100 nm) were investigated with a continuous laser source of λ = 658 nm (1.88 eV) over a wide range of illumination power of 22.8 nW < P < 1.29 μW. All the devices studied, showed signatures of photogating, however, our investigations suggest that the photoresponsivities are strongly dependent on the thickness of the conductive channel. A correlation between the field-effect mobility (μFE) values (as a function of channel thickness, t) and photoresponsivity (R) indicates that in general R increases with increasing μFE (decreasing t) and vice versa. The maximum responsivity of ~ 7.84 A/W and ~ 0.59 A/W was obtained for the device with t = 20 nm and t = 100 nm respectively. These values could substantially increase under the application of a gate voltage. The structure-property correlation-based studies presented here indicate the possibility of tuning the optical properties of InSe based photo-FETs for a variety of applications related to photodetector and/or active layers in solar cells.
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Submitted 30 January, 2021;
originally announced February 2021.
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Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements
Authors:
Nihar R. Pradhan,
Carlos Garcia,
Joshua Holleman,
Daniel Rhodes,
Chason Parkera,
Saikat Talapatra,
Mauricio Terrones,
Luis Balicas,
Stephen A. McGill
Abstract:
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination b…
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Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ~85 A/W and ~20000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.
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Submitted 27 September, 2016;
originally announced September 2016.
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Viable route towards large-area two dimensional MoS2 using magnetron sputtering
Authors:
Hassana Samassekou,
Asma Alkabsh,
Milinda Wasala,
Miller Eaton,
Aaron Walber,
Andrew Walker,
Olli Pitkänen,
Krisztian Kordas,
Saikat Talapatra,
Thushari Jayasekera,
Dipanjan Mazumdar
Abstract:
Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsom…
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Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.
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Submitted 23 November, 2016; v1 submitted 24 May, 2016;
originally announced May 2016.
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Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality
Authors:
Ismail Bilgin,
Fangze Liu,
Anthony Vargas,
Andrew Winchester,
Michael K. L. Man,
Moneesh Upmanyu,
Keshav M Dani,
Gautam Gupta,
Saikat Talapatra,
Aditya D. Mohite,
Swastik Kar
Abstract:
The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We presen…
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The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few- layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm2/Vs in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence map** over entire crystals with areas exceeding hundreds of square micrometers. Owing to their high crystalline quality, Raman spectroscopy on these samples reveal a range of multi-phonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness- and substrate-dependence of the extremely weak phonon processes at 285 cm-1 and 487 cm-1 in 2D MoS2. The ultra-high, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on device fabricated with mechanically exfoliated that were artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D MoS2 for scalable, high-quality optoelectronics.
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Submitted 20 August, 2015; v1 submitted 19 April, 2015;
originally announced April 2015.
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Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors
Authors:
N. R. Pradhan,
D. Rhodes,
S. Memaran,
J. M. Poumirol,
D. Smirnov,
S. Talapatra,
S. Feng,
N. Perea-Lopez,
A. L. Elias,
M. Terrones,
P. M. Ajayan,
L. Balicas
Abstract:
Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/V…
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Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hop** behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics.
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Submitted 1 February, 2015;
originally announced February 2015.
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Intrinsic carrier mobility of multi-layered MoS$_2$ field-effect transistors on SiO$_2$
Authors:
N. R. Pradhan,
D. Rhodes,
Q. Zhang,
S. Talapatra,
M. Terrones,
P. M. Ajayan,
L. Balicas
Abstract:
By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $μ$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably s…
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By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $μ$ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.
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Submitted 28 March, 2013; v1 submitted 13 January, 2013;
originally announced January 2013.
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Growth of carbon nanotubes on quasicrystalline alloys
Authors:
Deep Jariwala,
Kaushik Chandra,
Anyuan Cao,
Saikat Talapatra,
Mutshihiro Shima,
D. Anuhya,
V. S. S. S. Prasad,
R. Ribeiro,
P. C. Canfield,
D. Wu,
Anchal Srivastava,
R. K. Mandal,
A. K. Pramanick,
Robert Vajtai,
Pulickel. M. Ajayan,
G. V. S. Sastry
Abstract:
We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also bee…
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We report on the synthesis of carbon nanotubes on quasicrystalline alloys. Aligned multiwalled carbon nanotubes (MWNTs) on the conducting faces of decagonal quasicrystals were synthesized using floating catalyst chemical vapor deposition. The alignment of the nanotubes was found perpendicular to the decagonal faces of the quasicrystals. A comparison between the growth and tube quality has also been made between tubes grown on various quasicrystalline and SiO2 substrates. While a significant MWNT growth was observed on decagonal quasicrystalline substrate, there was no significant growth observed on icosahedral quasicrystalline substrate. Raman spectroscopy and high resolution transmission electron microscopy (HRTEM) results show high crystalline nature of the nanotubes. Presence of continuous iron filled core in the nanotubes grown on these substrates was also observed, which is typically not seen in MWNTs grown using similar process on silicon and/or silicon dioxide substrates. The study has important implications for understanding the growth mechanism of MWNTs on conducting substrates which have potential applications as heat sinks.
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Submitted 10 October, 2012;
originally announced October 2012.
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Double resonance Raman study of disorder in CVD-grown single-walled carbon nanotubes
Authors:
Rahul Rao,
Jason Reppert,
Xianfeng Zhang,
Ramakrishna Podila,
Apparao M. Rao,
Saikat Talapatra,
Benji Maruyama
Abstract:
Single-walled carbon nanotubes (SWNTs) with varying degrees of disorder were investigated using multiple-excitation Raman spectroscopy. The lattice disorder was imparted into the nanotubes by the addition of varying amounts of sulfur to the iron catalyst in a thermal chemical vapor deposition process. Changes in the intensities of peaks occurring due to a double resonance Raman process were studie…
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Single-walled carbon nanotubes (SWNTs) with varying degrees of disorder were investigated using multiple-excitation Raman spectroscopy. The lattice disorder was imparted into the nanotubes by the addition of varying amounts of sulfur to the iron catalyst in a thermal chemical vapor deposition process. Changes in the intensities of peaks occurring due to a double resonance Raman process were studied. The intensity of the disorder-induced D band increased with a decrease in the sulfur content. Upon post-synthesis heat treatment, the double resonance process got quenched due to defect healing. The second order G' band and iTOLA bands exhibited a two-peak structure, of which one of the peaks is relatively more sensitive to defects and decreased in intensity with heat treatment.
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Submitted 29 November, 2010; v1 submitted 22 October, 2010;
originally announced October 2010.
