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Universal Role of Combined Symmetry for the Protection of the Dirac Cone in Antiferromagnetic Topological Insulators
Authors:
Asuka Honma,
Noriyuki Kabeya,
Seigo Souma,
Yongjian Wang,
Kunihiko Yamauchi,
Kosuke Nakayama,
Daichi Takane,
Kenichi Ozawa,
Miho Kitamura,
Koji Horiba,
Hiroshi Kumigashira,
Tamio Oguchi,
Takashi Takahashi,
Noriaki Kimura,
Yoichi Ando,
Takafumi Sato
Abstract:
Antiferromagnetic topological insulators (AF TIs) are predicted to exhibit exotic physical properties such as gigantic optical and topological magnetoelectric responses. While a key to achieving such phenomena relies on how to break the symmetry protecting the Dirac-cone surface state (SS) and acquire the mass of Dirac fermions, the mechanism has yet to be clarified. To address this issue, we carr…
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Antiferromagnetic topological insulators (AF TIs) are predicted to exhibit exotic physical properties such as gigantic optical and topological magnetoelectric responses. While a key to achieving such phenomena relies on how to break the symmetry protecting the Dirac-cone surface state (SS) and acquire the mass of Dirac fermions, the mechanism has yet to be clarified. To address this issue, we carried out micro-focused angle-resolved photoemission spectroscopy for GdBi hosting the type-II AF order, and uncovered the stripe-type 2$\times$1 reconstruction of the Fermi surface associated with the AF band folding. Intriguingly, in contrast to NdBi with the type-I AF order displaying the surface-selective Dirac-fermion mass, GdBi shows massless behavior irrespective of AF domains due to the robust topological protection. These results strongly suggest a crucial role of the ThetaTD (time-reversal and translational) symmetry to create the Dirac-fermion mass in AF TIs.
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Submitted 19 June, 2024;
originally announced June 2024.
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Antiferromagnetic topological insulator with selectively gapped Dirac cones
Authors:
A. Honma,
D. Takane,
S. Souma,
K. Yamauchi,
Y. Wang,
K. Nakayama,
K. Sugawara,
M. Kitamura,
K. Horiba,
H. Kumigashira,
K. Tanaka,
T. K. Kim,
C. Cacho,
T. Oguchi,
T. Takahashi,
Yoichi Ando,
T. Sato
Abstract:
Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform.…
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Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform. Here we report the experimental realization of the AF topological-insulator phase in NdBi. By using micro-focused angle-resolved photoemission spectroscopy, we discovered contrasting surface electronic states for two types of AF domains; the surface having the out-of-plane component in the AF-ordering vector displays Dirac-cone states with a gigantic energy gap, whereas the surface parallel to the AF-ordering vector hosts gapless Dirac states despite the time-reversal-symmetry breaking. The present results establish an essential role of combined symmetry to protect massless Dirac fermions under the presence of AF order and widen opportunities to realize exotic phenomena utilizing AF topological materials.
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Submitted 20 November, 2023;
originally announced November 2023.
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Unusual surface states associated with the PT-symmetry breaking and antiferromagnetic band folding in NdSb
Authors:
Asuka Honma,
Daichi Takane,
Seigo Souma,
Yongjian Wang,
Kosuke Nakayama,
Miho Kitamura,
Koji Horiba,
Hiroshi Kumigashira,
Takashi Takahashi,
Yoichi Ando,
Takafumi Sato
Abstract:
We have performed micro-focused angle-resolved photoemission spectroscopy on NdSb which exhibits the type-I antiferromagnetism below TN = 16 K. We succeeded in selectively observing the band structure for all three types of single-q antiferromagnetic (AF) domains at the surface. We found that two of the three surfaces whose AF-ordering vector lies within the surface plane commonly show twofold sym…
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We have performed micro-focused angle-resolved photoemission spectroscopy on NdSb which exhibits the type-I antiferromagnetism below TN = 16 K. We succeeded in selectively observing the band structure for all three types of single-q antiferromagnetic (AF) domains at the surface. We found that two of the three surfaces whose AF-ordering vector lies within the surface plane commonly show twofold symmetric surface states (SSs) around the bulk-band edges, whereas the other surface with an out-of-plane AF-ordering vector displays fourfold symmetric shallow electronlike SS at the Brillouin-zone center. We suggest that these SSs commonly originate from the combination of the PT (space-inversion and time-reversal) symmetry breaking at the surface and the band folding due to the AF order. The present results pave a pathway toward understanding the relationship between the symmetry and the surface electronic states in antiferromagnets.
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Submitted 13 September, 2023; v1 submitted 6 July, 2023;
originally announced July 2023.
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Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2
Authors:
Takafumi Sato,
Zhiwei Wang,
Daichi Takane,
Seigo Souma,
Chaoxi Cui,
Yongkai Li,
Kosuke Nakayama,
Tappei Kawakami,
Yuya Kubota,
Cephise Cacho,
Timur K. Kim,
Arian Arab,
Vladimir N. Strocov,
Yugui Yao,
Takashi Takahashi
Abstract:
We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antifer…
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We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.
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Submitted 2 September, 2020;
originally announced September 2020.
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Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs
Authors:
Kosuke Nakayama,
Zhiwei Wang,
Daichi Takane,
Seigo Souma,
Yuya Kubota,
Yuki Nakata,
Cephise Cacho,
Timur K. Kim,
Sandy Adhitia Ekahana,
Ming Shi,
Miho Kitamura,
Koji Horiba,
Hiroshi Kumigashira,
Takashi Takahashi,
Yoichi Ando,
Takafumi Sato
Abstract:
We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zo…
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We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.
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Submitted 10 July, 2020;
originally announced July 2020.
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Evidence for bulk nodal loops and universality of Dirac-node arc surface states in ZrGeXc (Xc = S, Se, Te)
Authors:
Takechika Nakamura,
Seigo Souma,
Zhiwei Wang,
Kunihiko Yamauchi,
Daichi Takane,
Hikaru Oinuma,
Kosuke Nakayama,
Koji Horiba,
Hiroshi Kumigashira,
Tamio Oguchi,
Takashi Takahashi,
Yoichi Ando,
Takafumi Sato
Abstract:
We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional bulk-band structure with the bulk nodal loops protected by glide mirror symmetry of the crystal lattice. Moreover, high-resolution ARPES measurements near the…
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We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional bulk-band structure with the bulk nodal loops protected by glide mirror symmetry of the crystal lattice. Moreover, high-resolution ARPES measurements near the Fermi level with vacuum-ultraviolet photons combined with first-principles band-structure calculations elucidated a Dirac-node-arc surface state traversing a tiny spin-orbit gap associated with the nodal loops. We found that this surface state commonly exists in ZrGeXc despite the difference in the shape of nodal loops. The present results suggest that the spin-orbit coupling and the multiple nodal loops cooperatively play a key role in creating the exotic Dirac-node-arc surface states in this class of topological line-node semimetals.
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Submitted 18 June, 2019;
originally announced June 2019.
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Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES
Authors:
Kosuke Nakayama,
Seigo Souma,
Chi Xuan Trang,
Daichi Takane,
Chaoyu Chen,
Jose Avila,
Takashi Takahashi,
Satoshi Sasaki,
Kouji Segawa,
Maria Carmen Asensio,
Yoichi Ando,
Takafumi Sato
Abstract:
We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows u…
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We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nano-islands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nano-islands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures.
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Submitted 7 May, 2019;
originally announced May 2019.
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Observation of band crossings protected by nonsymmorphic symmetry in the layered ternary telluride Ta3SiTe6
Authors:
Takafumi Sato,
Zhiwei Wang,
Kosuke Nakayama,
Seigo Souma,
Daichi Takane,
Yuki Nakata,
Hideaki Iwasawa,
Cephise Cacho,
Timur Kim,
Takashi Takahashi,
Yoichi Ando
Abstract:
We have performed angle-resolved photoemission spectroscopy of layered ternary telluride Ta3SiTe6 which is predicted to host nodal lines associated with nonsymmorphic crystal symmetry. We found that the energy bands in the valence-band region show Dirac-like dispersions which present a band degeneracy at the R point of the bulk orthorhombic Brillouin zone. This band degeneracy extends one-dimensio…
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We have performed angle-resolved photoemission spectroscopy of layered ternary telluride Ta3SiTe6 which is predicted to host nodal lines associated with nonsymmorphic crystal symmetry. We found that the energy bands in the valence-band region show Dirac-like dispersions which present a band degeneracy at the R point of the bulk orthorhombic Brillouin zone. This band degeneracy extends one-dimensionally along the whole SR high-symmetry line, forming the nodal lines protected by the glide mirror symmetry of the crystal. We also observed a small band splitting near EF which supports the existence of hourglass-type dispersions predicted by the calculation. The present results provide an excellent opportunity to investigate the interplay between exotic nodal fermions and nonsymmorphic crystal symmetry.
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Submitted 27 September, 2018;
originally announced September 2018.
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Observation of Chiral Fermions with a Large Topological Charge and and Associated Fermi-Arc Surface States in CoSi
Authors:
Daichi Takane,
Zhiwei Wang,
Seigo Souma,
Kosuke Nakayama,
Takechika Nakamura,
Hikaru Oinuma,
Yuki Nakata,
Hideaki Iwasawa,
Cephise Cacho,
Timur Kim,
Kouji Horiba,
Hiroshi Kumigashira,
Takashi Takahashi,
Yoichi Ando,
Takafumi Sato
Abstract:
Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be exper…
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Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, spin-1 chiral fermion and double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions.
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Submitted 8 November, 2018; v1 submitted 4 September, 2018;
originally announced September 2018.
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Observation of a Dirac nodal line in AlB2
Authors:
Daichi Takane,
Seigo Souma,
Kosuke Nakayama,
Takechika Nakamura,
Hikaru Oinuma,
Kentaro Hori,
Kouji Horiba,
Hiroshi Kumigashira,
Noriaki Kimura,
Takashi Takahashi,
Takafumi Sato
Abstract:
We have performed angle-resolved photoemission spectroscopy of AlB2 which is isostructural to high-temperature superconductor MgB2. Using soft-x-ray photons, we accurately determined the three-dimensional bulk band structure and found a highly anisotropic Dirac-cone band at the K point in the bulk hexagonal Brillouin zone. This band disperses downward on approaching the H point while kee** its d…
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We have performed angle-resolved photoemission spectroscopy of AlB2 which is isostructural to high-temperature superconductor MgB2. Using soft-x-ray photons, we accurately determined the three-dimensional bulk band structure and found a highly anisotropic Dirac-cone band at the K point in the bulk hexagonal Brillouin zone. This band disperses downward on approaching the H point while kee** its degeneracy at the Dirac point, producing a characteristic Dirac nodal line along the KH line. We also found that the band structure of AlB2 is regarded as a heavily electron-doped version of MgB2 and is therefore well suited for fully visualizing the predicted Dirac nodal line. The present results suggest that (Al,Mg)B2 system is a promising platform for studying the interplay among Dirac nodal line, carrier do**, and possible topological superconducting properties.
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Submitted 18 July, 2018; v1 submitted 3 July, 2018;
originally announced July 2018.
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Observation of Dirac-like energy band and ring-torus Fermi surface associated with the nodal line in topological insulator CaAgAs
Authors:
D. Takane,
K. Nakayama,
S. Souma,
T. Wada,
Y. Okamoto,
K. Takenaka,
Y. Yamakawa,
A. Yamakage,
T. Mitsuhashi,
K. Horiba,
H. Kumigashira,
T. Takahashi,
T. Sato
Abstract:
One of key challenges in current material research is to search for new topological materials with inverted bulk-band structure. In topological insulators, the band inversion caused by strong spin-orbit coupling leads to opening of a band gap in the entire Brillouin zone, whereas an additional crystal symmetry such as point-group and nonsymmorphic symmetries sometimes prohibits the gap opening at/…
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One of key challenges in current material research is to search for new topological materials with inverted bulk-band structure. In topological insulators, the band inversion caused by strong spin-orbit coupling leads to opening of a band gap in the entire Brillouin zone, whereas an additional crystal symmetry such as point-group and nonsymmorphic symmetries sometimes prohibits the gap opening at/on specific points or line in momentum space, giving rise to topological semimetals. Despite many theoretical predictions of topological insulators/semimetals associated with such crystal symmetries, the experimental realization is still relatively scarce. Here, using angle-resolved photoemission spectroscopy with bulk-sensitive soft x-ray photons, we experimentally demonstrate that hexagonal pnictide CaAgAs belongs to a new family of topological insulators characterized by the inverted band structure and the mirror reflection symmetry of crystal. We have established the bulk valence-band structure in three-dimensional Brillouin zone, and observed the Dirac-like energy band and ring-torus Fermi surface associated with the line node, where bulk valence and conducting bands cross on a line in the momentum space under negligible spin-orbit coupling. Intriguingly, we found that no other bands cross the Fermi level and therefore the low-energy excitations are solely characterized by the Dirac-like band. CaAgAs provides an excellent platform to study the interplay among low-energy electron dynamics, crystal symmetry, and exotic topological properties.
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Submitted 26 January, 2018; v1 submitted 22 August, 2017;
originally announced August 2017.
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Three-dimensional band structure of LaSb and CeSb:Absence of band inversion
Authors:
H. Oinuma,
S. Souma,
D. Takane,
T. Nakamura,
K. Nakayama,
T. Mitsuhashi,
K. Horiba,
H. Kumigashira,
M. Yoshida,
A. Ochiai,
T. Takahashi,
T. Sato
Abstract:
We have performed angle-resolved photoemission spectroscopy (ARPES) of LaSb and CeSb, a candidate of topological insulator. Using soft-x-ray photons, we have accurately determined the three-dimensional bulk band structure and revealed that the band inversion at the Brillouin-zone corner - a prerequisite for realizing topological-insulator phase - is absent in both LaSb and CeSb. Moreover, unlike t…
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We have performed angle-resolved photoemission spectroscopy (ARPES) of LaSb and CeSb, a candidate of topological insulator. Using soft-x-ray photons, we have accurately determined the three-dimensional bulk band structure and revealed that the band inversion at the Brillouin-zone corner - a prerequisite for realizing topological-insulator phase - is absent in both LaSb and CeSb. Moreover, unlike the ARPES data obtained with soft-x-ray photons, those with vacuum ultraviolet (VUV) photons were found to suffer significant $k_z$ broadening. These results suggest that LaSb and CeSb are topologically trivial semimetals, and unusual Dirac-cone-like states observed with VUV photons are not of the topological origin.
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Submitted 17 July, 2017;
originally announced July 2017.
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Fermiology of possible topological superconductor Tl0.5Bi2Te3 derived from hole-doped topological insulator
Authors:
C. X. Trang,
Z. Wang,
D. Takane,
K. Nakayama,
S. Souma,
T. Sato,
T. Takahashi,
A. A. Taskin,
Yoichi Ando
Abstract:
We have performed angle-resolved photoemission spectroscopy on Tl0.5Bi2Te3, a possible topological superconductor derived from Bi2Te3. We found that the bulk Fermi surface consists of multiple three-dimensional hole pockets surrounding the Z point, produced by the direct hole do** into the valence band. The Dirac-cone surface state is well isolated from the bulk bands, and the surface chemical p…
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We have performed angle-resolved photoemission spectroscopy on Tl0.5Bi2Te3, a possible topological superconductor derived from Bi2Te3. We found that the bulk Fermi surface consists of multiple three-dimensional hole pockets surrounding the Z point, produced by the direct hole do** into the valence band. The Dirac-cone surface state is well isolated from the bulk bands, and the surface chemical potential is variable in the entire band-gap range. Tl0.5Bi2Te3 thus provides an excellent platform to realize two-dimensional topological superconductivity through a proximity effect from the superconducting bulk. Also, the observed Fermi-surface topology provides a concrete basis for constructing theoretical models for bulk topological superconductivity in hole-doped topological insulators.
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Submitted 27 June, 2016;
originally announced June 2016.
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Unexpected Dirac-Node Arc in the Topological Line-Node Semimetal HfSiS
Authors:
D. Takane,
Z. Wang,
S. Souma,
K. Nakayama,
C. X. Trang,
T. Sato,
T. Takahashi,
Yoichi Ando
Abstract:
We have performed angle-resolved photoemission spectroscopy on HfSiS, which has been predicted to be a topological line-node semimetal with square Si lattice. We found a quasi-two-dimensional Fermi surface hosting bulk nodal lines, alongside the surface states at the Brillouin-zone corner exhibiting a sizable Rashba splitting and band-mass renormalization due to many-body interactions. Most notabl…
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We have performed angle-resolved photoemission spectroscopy on HfSiS, which has been predicted to be a topological line-node semimetal with square Si lattice. We found a quasi-two-dimensional Fermi surface hosting bulk nodal lines, alongside the surface states at the Brillouin-zone corner exhibiting a sizable Rashba splitting and band-mass renormalization due to many-body interactions. Most notably, we discovered an unexpected Dirac-like dispersion extending one-dimensionally in k space - the Dirac-node arc - near the bulk node at the zone diagonal. These novel Dirac states reside on the surface and could be related to hybridizations of bulk states, but currently we have no explanation for its origin. This discovery poses an intriguing challenge to the theoretical understanding of topological line-node semimetals.
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Submitted 25 June, 2016;
originally announced June 2016.
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Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey
Authors:
Daichi Takane,
Seigo Souma,
Takafumi Sato,
Takashi Takahashi,
Kouji Segawa,
Yoichi Ando
Abstract:
Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence…
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Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of work function in Bi2-xSbxTe3-ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) show a systematic variation with the composition, well tracking the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for develo** TI-based electronic devices.
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Submitted 25 June, 2016;
originally announced June 2016.
