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Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis
Authors:
Stefano Bigoni,
Marco L. V. Tagliaferri,
Dario Tamascelli,
Sebastiano Strangio,
Roberto Bez,
Paolo Organtini,
Giorgio Ferrari,
Enrico Prati
Abstract:
We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime…
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We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian $1/f^2$ noise at low frequency.
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Submitted 13 July, 2020;
originally announced July 2020.
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Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
Authors:
N. W. Hendrickx,
M. L. V. Tagliaferri,
M. Kouwenhoven,
R. Li,
D. P. Franke,
A. Sammak,
A. Brinkman,
G. Scappucci,
M. Veldhorst
Abstract:
We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances, demonstrating ballistic transport. The magnetic field dependen…
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We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances, demonstrating ballistic transport. The magnetic field dependence of the supercurrent follows a clear Fraunhofer-like pattern and Shapiro steps appear upon microwave irradiation. Multiple Andreev reflections give rise to conductance enhancement and evidence a transparent interface, confirmed by analyzing the excess current. These demonstrations of ballistic superconducting transport are promising for hybrid quantum technology in germanium.
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Submitted 2 August, 2018;
originally announced August 2018.
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Impact of valley phase and splitting on readout of silicon spin qubits
Authors:
M. L. V. Tagliaferri,
P. L. Bavdaz,
W. Huang,
A. S. Dzurak,
D. Culcer,
M. Veldhorst
Abstract:
We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase difference controls the relative strength of the intra- and inter-valley tunnel couplings, which, in the proposed Pauli-spin blockade readout scheme, couple sing…
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We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase difference controls the relative strength of the intra- and inter-valley tunnel couplings, which, in the proposed Pauli-spin blockade readout scheme, couple singlets and polarized triplets, respectively. We find that high-fidelity readout is possible for a wide range of phase differences, while taking into account experimentally observed valley splittings and tunnel couplings. We also show that the control of the valley splitting together with the optimization of the readout detuning can compensate the effect of the valley phase difference. To increase the measurement fidelity and extend the relaxation time we propose a latching protocol that requires a triple quantum dot and exploits weak long-range tunnel coupling. These opportunities are promising for scaling spin qubit systems and improving qubit readout fidelity
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Submitted 5 March, 2018;
originally announced March 2018.
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Spin lifetime and charge noise in hot silicon quantum dot qubits
Authors:
L. Petit,
J. M. Boter,
H. G. J. Eenink,
G. Droulers,
M. L. V. Tagliaferri,
R. Li,
D. P. Franke,
K. J. Singh,
J. S. Clarke,
R. N. Schouten,
V. V. Dobrovitski,
L. M. K. Vandersypen,
M. Veldhorst
Abstract:
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise…
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We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.
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Submitted 1 September, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
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Gate-controlled quantum dots and superconductivity in planar germanium
Authors:
N. W. Hendrickx,
D. P. Franke,
A. Sammak,
M. Kouwenhoven,
D. Sabbagh,
L. Yeoh,
R. Li,
M. L. V. Tagliaferri,
M. Virgilio,
G. Capellini,
G. Scappucci,
M. Veldhorst
Abstract:
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we reali…
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Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we realise an approach that overcomes these issues altogether and integrate gate-defined quantum dots and superconductivity into a material system with strong spin-orbit coupling. In our germanium heterostructures, heavy holes with mobilities exceeding 500,000 cm$^2$/Vs are confined in shallow quantum wells that are directly contacted by annealed aluminium leads. We demonstrate gate-tunable superconductivity and find a characteristic voltage $I_cR_n$ that exceeds 10 $μ$V. Germanium therefore has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material in the quantum revolution.
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Submitted 26 January, 2018;
originally announced January 2018.
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Reconfigurable quadruple quantum dots in a silicon nanowire transistor
Authors:
A. C. Betz,
M. L. V. Tagliaferri,
M. Vinet,
M. Broström,
M. Sanquer,
A. J. Ferguson,
M. F. Gonzalez-Zalba
Abstract:
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitanc…
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We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
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Submitted 11 March, 2016;
originally announced March 2016.
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Valley blockade and multielectron spin-valley Kondo effect in silicon
Authors:
A. Crippa,
M. L. V. Tagliaferri,
D. Rotta,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
R. Wacquez,
M. Vinet,
E. Prati
Abstract:
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation…
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We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.
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Submitted 29 April, 2015; v1 submitted 12 January, 2015;
originally announced January 2015.
