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Design of Ga2O3 Modulation Doped Field Effect Transistors
Authors:
Michael Mastro,
Marko J. Tadjer,
Jihyun Kim,
Fan Ren,
Stephen J. Pearton
Abstract:
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and do**-dependent model of the electron mobility as well as temperature- and orientation-dependent approximations of the thermal conductivity of beta-Ga2O3 are presented. A decrease in d…
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The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and do**-dependent model of the electron mobility as well as temperature- and orientation-dependent approximations of the thermal conductivity of beta-Ga2O3 are presented. A decrease in drain current was attributed to a position-dependent mobility reduction caused by a coupled self-heating mechanism and a high electric-field mobility reduction mechanism. A simple thermal management solution is presented where heat is extracted through the source contact metal. Additionally, it is shown that an undesired secondary channel can form at the modulation doped layer that is distinguished by an inflection in the transconductance curve.
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Submitted 8 May, 2021;
originally announced May 2021.
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Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification
Authors:
Michael A. Mastro,
Charles R. Eddy, Jr.,
Marko J. Tadjer,
Jennifer K. Hite,
Jihyun Kim,
Stephen J. Pearton
Abstract:
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O…
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Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O$_3$ surface are known to form sub-nanometer scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a sub-nanometer-scale feature along the [001] direction. Additionally, the general crystal structure of $β$-Ga$_2$O$_3$ is presented and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.
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Submitted 8 May, 2021;
originally announced May 2021.
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Multi-frequency coherent emission from superstructure thermal emitters
Authors:
Guanyu Lu,
Marko Tadjer,
Joshua D. Caldwell,
Thomas G. Folland
Abstract:
Long-range spatial coherence can be induced in thermal emitters by embedding a periodic grating into a material supporting propagating polaritons or dielectric modes. However, the emission angle and frequency cannot be defined simultaneously and uniquely, resulting in emission at unusable angles or frequencies. Here, we explore superstructure gratings (SSGs) to control the spatial and spectral pro…
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Long-range spatial coherence can be induced in thermal emitters by embedding a periodic grating into a material supporting propagating polaritons or dielectric modes. However, the emission angle and frequency cannot be defined simultaneously and uniquely, resulting in emission at unusable angles or frequencies. Here, we explore superstructure gratings (SSGs) to control the spatial and spectral properties of thermal emitters. SSGs have long-range periodicity, but a unit cell that provides tailorable Bragg components to interact with light. These Bragg components allow simultaneous launching of polaritons with different frequencies/wavevectors in a single grating, manifesting as additional spatial and spectral bands upon the emission profile. As the unit cell period approaches the spatial coherence length, the coherence properties of the superstructure will be lost. Whilst the 1D k-space representation of the grating provides insights into the emission, the etch depth of the grating can result in strong polariton-polariton interactions. An emergent effect of these interactions is the creation of polaritonic band gaps, and defect states that can have a well-defined frequency and emission angle. In all, our results show experimentally how even in simple 1D gratings there is significant design flexibility for engineering the profile of thermal emitters, bound by finite coherence length.
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Submitted 15 December, 2020;
originally announced December 2020.
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III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Authors:
Michael A. Mastro,
Travis J. Anderson,
Marko J. Tadjer,
Francis J. Kub,
Jennifer K. Hite,
Jihyun Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emittin…
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This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires.
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Submitted 2 September, 2020;
originally announced September 2020.
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Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
Authors:
M. A. Mastro,
J. K. Hite,
C. R. Eddy, Jr.,
M. J. Tadjer,
S. J. Pearton,
F. Ren,
J. Kim
Abstract:
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-…
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Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
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Submitted 2 September, 2020;
originally announced September 2020.
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Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films
Authors:
Luke Yates,
Zhe Cheng,
Tingyu Bai,
Karl Hobart,
Marko Tadjer,
Tatyana I. Feygelson,
Bradford B. Pate,
Mark Goorsky,
Samuel Graham
Abstract:
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequ…
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As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of the heat capacity and thermal conductivity when modeling and predicting device electrothermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously. In this work, we use time domain thermoreflectance (TDTR) to simultaneously measure the in plane thermal conductivity and heat capacity of a 1 um thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in plane thermal conductivity varied slightly with an average of 103 W per meter per K over a temperature range of 302 to 327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature.
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Submitted 22 June, 2020;
originally announced June 2020.
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Vibrational Coupling to Epsilon-Near-Zero Waveguide Modes
Authors:
Thomas G. Folland,
Guanyu Lu,
A. Bruncz,
J. Ryan Nolen,
Marko Tadjer,
Joshua D. Caldwell
Abstract:
Epsilon near zero modes offer extreme field enhancement that can be utilized for develo** enhanced sensing schemes. However, demonstrations of enhanced spectroscopies have largely exploited surface polaritons, mostly due to the challenges of coupling a vibrational transition to volume-confined epsilon near zero modes. Here we fabricate high aspect ratio gratings (up to 24.8 um height with greate…
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Epsilon near zero modes offer extreme field enhancement that can be utilized for develo** enhanced sensing schemes. However, demonstrations of enhanced spectroscopies have largely exploited surface polaritons, mostly due to the challenges of coupling a vibrational transition to volume-confined epsilon near zero modes. Here we fabricate high aspect ratio gratings (up to 24.8 um height with greater than 5 μm pitch) of 4H-SiC, with resonant modes that couple to transverse magnetic and transverse electric incident fields. These correspond to metal-insulator-metal waveguide modes propagating downwards into the substrate. The cavity formed by the finite length of the waveguide allows for strong absorption of incident infrared light (>80%) with Q factors in excess of 90, including an epsilon near zero waveguide mode with εeff=0.0574+0.008i. The localization of the electromagnetic fields within the gap between the grating teeth suggests an opportunity to realize a new platform for studying vibrational coupling in liquid environments, with potential opportunities for enhanced spectroscopies. We show that these modes are supported in anhydrous and aqueous environments, and that high aspect ratio gratings coherently couple to the vibrational transition in the surrounding liquid.
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Submitted 8 January, 2020;
originally announced January 2020.
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Computer Assisted Access to Justice via Formal Jurisprudence Modeling
Authors:
Michael Bar-Sinai,
Michal Tadjer,
Mor Vilozni
Abstract:
This paper discusses an internet-based system for enabling people to self-assess their legal rights in a given situation, and a development methodology for such systems. The assessment process is based on a formal model of the relevant jurisprudence, exposed to the user through an interview. The model consists of a multi-dimensional space whose dimensions represent orthogonal jurisprudence aspects…
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This paper discusses an internet-based system for enabling people to self-assess their legal rights in a given situation, and a development methodology for such systems. The assessment process is based on a formal model of the relevant jurisprudence, exposed to the user through an interview. The model consists of a multi-dimensional space whose dimensions represent orthogonal jurisprudence aspects, and a decision graph that guides the user through that space. Self-assessment systems can revolutionize the way legal aid organizations help their clients, as they allow these organizations to deliver personalized help at internet scales. The proposed approach is validated through an implementation of a model for workers' rights when their employment ends. This model, describing Israeli law and developed in cooperation with a worker rights NGO, was ratified by external experts as accurate enough to be useful in real cases.
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Submitted 5 November, 2019; v1 submitted 29 October, 2019;
originally announced October 2019.
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Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management
Authors:
Zhe Cheng,
Virginia D. Wheeler,
Tingyu Bai,
**g**g Shi,
Marko J. Tadjer,
Tatyana Feygelson,
Karl D. Hobart,
Mark S. Goorsky,
Samuel Graham
Abstract:
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3…
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Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3 electronics will be the key for device reliability, especially for high power and high frequency devices. Similar to the method of cooling GaN-based high electron mobility transistors by integrating it with high thermal conductivity diamond substrates, this work studies the possibility of heterogeneous integration of Ga2O3 with diamond for thermal management of Ga2O3 devices. In this work, Ga2O3 was deposited onto single crystal diamond substrates by ALD and the thermal properties of ALD-Ga2O3 thin films and Ga2O3-diamond interfaces with different interface pretreatments were measured by TDTR. We observed very low thermal conductivity of these Ga2O3 thin films due to the extensive phonon grain boundary scattering resulting from the nanocrystalline nature of the Ga2O3 film. However, the measured thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces are about 10 times larger than that of the Van der Waals bonded Ga2O3 diamond interfaces, which indicates the significant impact of interface bonding on TBC. Furthermore, the TBC of the Ga-rich and O-rich Ga2O3-diamond interfaces are about 20% smaller than that of the clean interface, indicating interface chemistry affects interfacial thermal transport. Overall, this study shows that a high TBC can be obtained from strong interfacial bonds across Ga2O3-diamond interfaces, providing a promising route to improving the heat dissipation from Ga2O3 devices.
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Submitted 23 August, 2019;
originally announced August 2019.
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Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces
Authors:
Zhe Cheng,
Luke Yates,
**g**g Shi,
Marko J. Tadjer,
Karl D. Hobart,
Samuel Graham
Abstract:
Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with mi…
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Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with minimal selfheating at high power, proper thermal management is even more essential for Ga2O3 devices. Similarly to the past approaches aiming to alleviate selfheating in GaN HEMTs, a possible solution has been to integrate thin Ga2O3 membranes with diamond to fabricate Ga2O3 on diamond lateral MESFET or MOSFET devices by taking advantage of the ultra high thermal conductivity of diamond. Even though the TBC between wide bandgap semiconductor devices such as GaN HEMTs and a diamond substrate is of primary importance for heat dissipation in these devices, fundamental understanding of the Ga2O3 diamond thermal interface is still missing. In this work, we study the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond. The Van der Waals bonded Ga2O3 diamond TBC is measured to be 17 MWm2K1, which is comparable to the TBC of several physical vapor deposited metals on diamond. A Landauer approach is used to help understand phonon transport across perfect Ga2O3 diamond interface, which in turn sheds light on the possible TBC one could achieve with an optimized interface. A reduced thermal conductivity of the Ga2O3 nanomembrane is also observed due to additional phonon membrane boundary scattering. The impact of the Ga2O3substrate TBC and substrate thermal conductivity on the thermal performance of a power device are modeled and discussed.
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Submitted 9 January, 2019;
originally announced January 2019.
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Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy
Authors:
Zhe Cheng,
Tingyu Bai,
**g**g Shi,
Tianli Feng,
Yekan Wang,
Matthew Mecklenburg,
Chao Li,
Karl D. Hobart,
Tatyana I. Feygelson,
Marko J. Tadjer,
Bradford B. Pate,
Brian M. Foley,
Luke Yates,
Sokrates T. Pantelides,
Baratunde A. Cola,
Mark Goorsky,
Samuel Graham
Abstract:
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport…
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The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical-vapor-deposited (CVD) diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, non-equilibrium molecular-dynamics (NEMD) simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth.
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Submitted 7 January, 2019; v1 submitted 30 July, 2018;
originally announced July 2018.
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Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
Authors:
Marko J. Tadjer,
Virginia D. Wheeler,
Brian P. Downey,
Zachary R. Robinson,
David J. Meyer,
Charles R. Eddy, Jr.,
Fritz J. Kub
Abstract:
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metal…
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Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 $°$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 $°$C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO$_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO$_{2}$ crystalline quality.
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Submitted 19 February, 2016;
originally announced February 2016.
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Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene
Authors:
A. Nath,
M. Currie,
V. D. Wheeler,
M. J. Tadjer,
A. D. Koehler,
Z. R. Robinson,
K. Sridhara,
S. C. Hernandez,
J. A. Wollmershauser,
J. T Robinson,
R. L. Myers-Ward,
C. R. Eddy, Jr.,
M. V. Rao,
D. K. Gaskill
Abstract:
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist resid…
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Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled do** and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit.
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Submitted 19 November, 2014;
originally announced November 2014.
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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Authors:
Joshua D. Caldwell,
Travis J. Anderson,
James C. Culbertson,
Glenn G. Jernigan,
Karl D. Hobart,
Fritz J. Kub,
Marko J. Tadjer,
Joseph L. Tedesco,
Jennifer K. Hite,
Michael A. Mastro,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
Paul M. Campbell,
D. Kurt Gaskill
Abstract:
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr…
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In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.
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Submitted 14 October, 2009;
originally announced October 2009.
