Low-loss composite photonic platform based on 2D semiconductor monolayers
Authors:
Ipshita Datta,
Sang Hoon Chae,
Gaurang R. Bhatt,
Mohammad A. Tadayon,
Baichang Li,
Yiling Yu,
Chibeom Park,
Jiwoong Park,
Linyou Cao,
D. N. Basov,
James Hone,
Michal Lipson
Abstract:
Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic do**. The optical properties of TMDs have been shown to change drastically with do** in the wavelength range near the excitonic resonances. However, little is known abo…
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Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic do**. The optical properties of TMDs have been shown to change drastically with do** in the wavelength range near the excitonic resonances. However, little is known about the effect of do** on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light$-$matter interaction with the monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$) $\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$n = $0.53$, with only a minimal change in the imaginary part $Δ$k = $0.004$. The do** induced phase change ($Δ$n), compared to the induced absorption ($Δ$k) measured for WS$_2$ ($Δ$n/$Δ$k $\sim 125$), a key metric for photonics, is an order of magnitude higher than the $Δ$n/$Δ$k for bulk materials like silicon ($Δ$n/$Δ$k $\sim 10$), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V$_π$L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.
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Submitted 2 June, 2019;
originally announced June 2019.
A Reconfigurable Nanophotonics Platform for Sub-Millisecond, Deep Brain Neural Stimulation
Authors:
Aseema Mohanty,
Qian Li,
Mohammad Amin Tadayon,
Gaurang Bhatt,
Euijae Shim,
Xingchen Ji,
Jaime Cardenas,
Steven A. Miller,
Adam Kepecs,
Michal Lipson
Abstract:
Nanophotonics provides the ability to rapidly and precisely reconfigure light beams on a compact platform. Infrared nanophotonic devices are widely used in data communications to overcome traditional bandwidth limitations of electrical interconnects. Nanophotonic devices also hold promise for use in biological applications that require visible light, but this has remained technically elusive due t…
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Nanophotonics provides the ability to rapidly and precisely reconfigure light beams on a compact platform. Infrared nanophotonic devices are widely used in data communications to overcome traditional bandwidth limitations of electrical interconnects. Nanophotonic devices also hold promise for use in biological applications that require visible light, but this has remained technically elusive due to the challenges of reconfiguring and guiding light at these smaller dimensions. In neuroscience, for example, there is a need for implantable optical devices to optogenetically stimulate neurons across deep brain regions with the speed and precision matching state-of-the-art recording probes. Here we demonstrate the first platform for reconfigurable nanophotonic devices in the visible wavelength range and show its application in vivo in the brain. We demonstrate an implantable probe endowed with the ability to rapidly switch and route multiple optical beams using a nanoscale switching network. Each switch consists of a silicon nitride waveguide structure that can be reconfigured by electrically tuning the phase of light and is designed for robustness to fabrication variation, enabling scalable devices. By implanting our probe in mouse visual cortex, we demonstrate in vivo the ability to stimulate identified sets of neurons across layers to produce multi-neuron spike patterns and record them simultaneously with sub-millisecond temporal precision. This nanophotonic platform can be scaled up and integrated with high-density neural recording technologies, opening the door to implantable probe technologies that are able to simultaneously record and stimulate the activity of large neural populations at distant regions of the brain with sub-millisecond precision. We expect this platform will enable researchers to gain a deeper understanding into the spatio-temporal precision of the neural code.
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Submitted 14 May, 2018;
originally announced May 2018.
