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Stabilizing the inverted phase of a WSe$_2$/BLG/WSe$_2$ heterostructure via hydrostatic pressure
Authors:
Máté Kedves,
Bálint Szentpéteri,
Albin Márffy,
Endre Tóvári,
Nikos Papadopoulos,
Prasanna K. Rout,
Kenji Watanabe,
Takashi Taniguchi,
Srijit Goswami,
Szabolcs Csonka,
Péter Makk
Abstract:
Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin--orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten-diselenide (WSe$_2$) via hydrostatic pressure…
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Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin--orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten-diselenide (WSe$_2$) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.
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Submitted 22 March, 2023;
originally announced March 2023.
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Tailoring the band structure of twisted double bilayer graphene with pressure
Authors:
Bálint Szentpéteri,
Peter Rickhaus,
Folkert K. de Vries,
Albin Márffy,
Bálint Fülöp,
Endre Tóvári,
Kenji Watanabe,
Takashi Taniguchi,
Andor Kormányos,
Szabolcs Csonka,
Péter Makk
Abstract:
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing the Fermi level and hence the electron density and also allows tuning the interlayer potential, giving further control over band gaps. Her…
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Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing the Fermi level and hence the electron density and also allows tuning the interlayer potential, giving further control over band gaps. Here, we demonstrate that by applying hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically non-trivial band gap opens at the charge neutrality point at zero displacement field.
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Submitted 30 October, 2021; v1 submitted 17 August, 2021;
originally announced August 2021.
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Boosting proximity spin orbit coupling in graphene/WSe$_2$ heterostructures via hydrostatic pressure
Authors:
Bálint Fülöp,
Albin Márffy,
Simon Zihlmann,
Martin Gmitra,
Endre Tóvári,
Bálint Szentpéteri,
Máté Kedves,
Kenji Watanabe,
Takashi Taniguchi,
Jaroslav Fabian,
Christian Schönenberger,
Péter Makk,
Szabolcs Csonka
Abstract:
Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changi…
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Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe$_2$ heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak anti-localization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene.
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Submitted 24 March, 2021;
originally announced March 2021.
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Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
Authors:
Zoltán Kovács-Krausz,
Anamul Md Hoque,
Péter Makk,
Bálint Szentpéteri,
Mátyás Kocsis,
Bálint Fülöp,
Michael Vasilievich Yakushev,
Tatyana Vladimirovna Kuznetsova,
Oleg Evgenevich Tereshchenko,
Konstantin Aleksandrovich Kokh,
István Endre Lukács,
Takashi Taniguchi,
Kenji Watanabe,
Saroj Prasad Dash,
Szabolcs Csonka
Abstract:
Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components, utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since al…
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Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components, utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected, where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Owning to its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits.
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Submitted 31 August, 2020;
originally announced August 2020.
