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Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics
Authors:
Beatrice Bednarz,
Maria-Andromachi Syskaki,
Rohit Pachat,
Leon Prädel,
Martin Wortmann,
Timo Kuschel,
Shimpei Ono,
Mathias Kläui,
Liza Herrera Diez,
Gerhard Jakob
Abstract:
Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-…
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Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.
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Submitted 7 June, 2024; v1 submitted 12 April, 2024;
originally announced April 2024.
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Suppression of the spin waves nonreciprocity due to interfacial Dzyaloshinskii Moriya interaction by lateral confinement in magnetic nanostructures
Authors:
S. Tacchi,
R. Silvani,
M. Kuepferling,
A. Fernandez Scarioni,
S. Sievers,
H. W. Schumacher,
E. Darwin,
M. -A. Syskaki,
G. Jakob,
M. Klaui,
G. Carlotti
Abstract:
Despite the huge recent interest towards chiral magnetism related to the interfacial Dzyaloshinskii Moriya interaction (iDMI) in layered systems, there is a lack of experimental data on the effect of iDMI on the spin waves eigenmodes of laterally confined nanostructures. Here we exploit Brillouin Light Scattering (BLS) to analyze the spin wave eigenmodes of non-interacting circular and elliptical…
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Despite the huge recent interest towards chiral magnetism related to the interfacial Dzyaloshinskii Moriya interaction (iDMI) in layered systems, there is a lack of experimental data on the effect of iDMI on the spin waves eigenmodes of laterally confined nanostructures. Here we exploit Brillouin Light Scattering (BLS) to analyze the spin wave eigenmodes of non-interacting circular and elliptical dots, as well as of long stripes, patterned starting from a Pt(3.4 nm)/CoFeB(0.8 nm) bilayer, with lateral dimensions ranging from 100 nm to 400 nm. Our experimental results, corroborated by micromagnetic simulations based on the GPU-accelerated MuMax3 software package, provide evidence for a strong suppression of the frequency asymmetry between counter-propagating spin waves (corresponding to either Stokes or anti-Stokes peaks in BLS spectra), when the lateral confinement is reduced from 400 nm to 100 nm, i.e. when it becomes lower than the light wavelength. Such an evolution reflects the modification of the spin wave character from propagating to stationary and indicates that the BLS based method of quantifying the i-DMI strength from the frequency difference of counter propagating spin waves is not applicable in the case of magnetic elements with lateral dimension below about 400 nm.
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Submitted 28 June, 2023;
originally announced June 2023.
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Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets
Authors:
Maria-Andromachi Syskaki,
Takaaki Dohi,
Sergei Olegovich Filnov,
Sergey Alexeyevich Kasatikov,
Beatrice Bednarz,
Alevtina Smekhova,
Florian Kronast,
Mona Bhukta,
Rohit Pachat,
Johannes Wilhelmus van der Jagt,
Shimpei Ono,
Dafiné Ravelosona Ramasitera,
Jürgen Langer,
Mathias Kläui,
Liza Herrera Diez,
Gerhard Jakob
Abstract:
The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying…
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The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.
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Submitted 16 June, 2023;
originally announced June 2023.
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Generation of imprinted strain gradients for spintronics
Authors:
Giovanni Masciocchi,
Mouad Fattouhi,
Elizaveta Spetzler,
Maria-Andromachi Syskaki,
Ronald Lehndorff,
Eduardo Martinez,
Jeffrey McCord,
Luis Lopez-Diaz,
Andreas Kehlberger,
Mathias Kläui
Abstract:
In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a compressive stress when deposited on a commercial silicon wafer. Removing selected areas of the passivation layer alters the strain on the micrometer range, lead…
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In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a compressive stress when deposited on a commercial silicon wafer. Removing selected areas of the passivation layer alters the strain on the micrometer range, leading to changes in the local magnetic anisotropy of a magnetic material through magnetoelastic interactions. Using Kerr microscopy, we experimentally demonstrate how the magnetoelastic energy landscape, created by a pair of openings, in a magnetic nanowire enables the creation of pinning sites for in-plane vortex walls that propagate in a magnetic racetrack. We report substantial pinning fields up to 15 mT for device-relevant ferromagnetic materials with positive magnetostriction. We support our experimental results with finite element simulations for the induced strain, micromagnetic simulations and 1D model calculations using the realistic strain profile to identify the depinning mechanism. All the observations above are due to the magnetoelastic energy contribution in the system, which creates local energy minima for the domain wall at the desired location. By controlling domain walls with strain, we realize the prototype of a true power-on magnetic sensor that can measure discrete magnetic fields or Oersted currents. This utilizes a technology that does not require piezoelectric substrates or high-resolution lithography, thus enabling wafer-level production.
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Submitted 10 May, 2023; v1 submitted 9 May, 2023;
originally announced May 2023.
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Fiber-tip spintronic terahertz emitters
Authors:
Felix Paries,
Nicolas Tiercelin,
Geoffrey Lezier,
Mathias Vanwolleghem,
Felix Selz,
Maria-Andromachi Syskaki,
Fabian Kammerbauer,
Gerhard Jakob,
Martin Jourdan,
Mathias KlÄui,
Zdenek Kaspar,
Tobias Kampfrath,
Tom S. Seifert,
Georg Von Freymann,
Daniel Molter
Abstract:
Spintronic terahertz emitters promise terahertz sources with an unmatched broad frequency bandwidth that are easy to fabricate and operate, and therefore easy to scale at low cost. However, current experiments and proofs of concept rely on free-space ultrafast pump lasers and rather complex benchtop setups. This contrasts with the requirements of widespread industrial applications, where robust, c…
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Spintronic terahertz emitters promise terahertz sources with an unmatched broad frequency bandwidth that are easy to fabricate and operate, and therefore easy to scale at low cost. However, current experiments and proofs of concept rely on free-space ultrafast pump lasers and rather complex benchtop setups. This contrasts with the requirements of widespread industrial applications, where robust, compact, and safe designs are needed. To meet these requirements, we present a novel fiber-tip spintronic terahertz emitter solution that allows spintronic terahertz systems to be fully fiber-coupled. Using single-mode fiber waveguiding, the newly developed solution naturally leads to a simple and straightforward terahertz near-field imaging system with a 90%-10% knife-edge-response spatial resolution of 30 $μm$.
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Submitted 2 May, 2023;
originally announced May 2023.
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Homochiral antiferromagnetic merons, antimerons and bimerons realized in synthetic antiferromagnets
Authors:
Mona Bhukta,
Takaaki Dohi,
Venkata Krishna Bharadwaj,
Ricardo Zarzuela,
Maria-Andromachi Syskaki,
Michael Foerster,
Miguel Angel Niño,
Jairo Sinova,
Robert Frömter,
Mathias Kläui
Abstract:
The ever-growing demand for device miniaturization and energy efficiency in data storage and computing technology has prompted a shift towards antiferromagnetic (AFM) topological spin textures as information carriers, owing to their negligible stray fields, leading to possible high device density and potentially ultrafast dynamics. We realize, in this work, such chiral in-plane (IP) topological an…
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The ever-growing demand for device miniaturization and energy efficiency in data storage and computing technology has prompted a shift towards antiferromagnetic (AFM) topological spin textures as information carriers, owing to their negligible stray fields, leading to possible high device density and potentially ultrafast dynamics. We realize, in this work, such chiral in-plane (IP) topological antiferromagnetic spin textures, namely merons, antimerons, and bimerons in synthetic antiferromagnets by concurrently engineering the effective perpendicular magnetic anisotropy, the interlayer exchange coupling, and the magnetic compensation ratio. We demonstrate by three-dimensional vector imaging of the Néel order parameter, the topology of those spin textures and reveal globally a well-defined chirality, which is a crucial requirement for controlled current-induced dynamics. Our analysis reveals that the interplay between interlayer exchange and interlayer magnetic dipolar interactions plays a key role in significantly reducing the critical strength of the Dzyaloshinskii-Moriya interaction required to stabilize topological spin textures, such as AFM merons, making synthetic antiferromagnets a promising platform for next-generation spintronics applications.
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Submitted 26 March, 2023;
originally announced March 2023.
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Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation
Authors:
Giovanni Masciocchi,
Johannes Wilhelmus van der Jagt,
Maria-Andromachi Syskaki,
Jürgen Langer,
Gerhard Jakob,
Jeffrey McCord,
Benjamin Borie,
Andreas Kehlberger,
Dafine Ravelosona,
Mathias Kläui
Abstract:
Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softnes…
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Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softness and magnetostriction in a 30 nm Permalloy film after He$^+$ irradiation. Compared to the as-deposited state, the irradiation treatment reduces the induced anisotropy by a factor ten and the hard axis coercivity by a factor five. In addition, the effective magnetostriction of the film is significantly reduced by a factor ten - below $1\times10^{-7}$ - after irradiation. All the above mentioned effects can be attributed to the isotropic crystallite growth of the Ni-Fe alloy and to the intermixing at the magnetic layer interfaces under light ion irradiation. We support our findings with X-ray diffraction analysis of the textured Ni$_{81}$Fe$_{19}$ alloy. Importantly, the sizable magnetoresistance is preserved after the irradiation. Our results show that compared to traditional annealing methods, the use of He$^+$ irradiation leads to significant improvements in the magnetic softness and reduces strain cross sensitivity in Permalloy films required for 3D positioning and compass applications. These improvements, in combination with the local nature of the irradiation process make our finding valuable for the optimization of monolithic integrated sensors, where classic annealing methods cannot be applied due to complex interplay within the components in the device.
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Submitted 2 March, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Control of magnetoelastic coupling in Ni/Fe multilayers using He$^+$ ion irradiation
Authors:
Giovanni Masciocchi,
Johannes Wilhelmus van der Jagt,
Maria-Andromachi Syskaki,
Alessio Lamperti,
Niklas Wolff,
Andriy Lotnyk,
Jürgen Langer,
Lorenz Kienle,
Gerhard Jakob,
Benjamin Borie,
Andreas Kehlberger,
Dafine Ravelosona,
Mathias Kläui
Abstract:
This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Addition…
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This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Additionally, the critical fluence at which the absolute value of the magnetostriction is dramatically reduced is identified. Therefore insensitivity to strain of the magnetic stack is nearly reached, as required for many applications. All the above mentioned effects are attributed to the combination of the negative saturation magnetostriction of sputtered Ni, Fe layers and the positive magnetostriction of the Ni$_{x}$Fe$_{1-x}$ alloy at the intermixed interfaces, whose contribution is gradually increased with irradiation. Importantly the irradiation does not alter the layers polycrystalline structure, confirming that post-growth He$^+$ ion irradiation is an excellent tool to tune the magneto-elastic properties of magnetic samples. A new class of spintronic devices can be envisioned with a material treatment able to arbitrarily change the magnetostriction with ion-induced "magnetic patterning".
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Submitted 6 July, 2022;
originally announced July 2022.
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Enhanced thermally-activated skyrmion diffusion with tunable effective gyrotropic force
Authors:
Takaaki Dohi,
Markus Weißenhofer,
Nico Kerber,
Fabian Kammerbauer,
Yuqing Ge,
Klaus Raab,
Jakub Zàzvorka,
Maria-Andromachi Syskaki,
Aga Shahee,
Moritz Ruhwedel,
Tobias Böttcher,
Philipp Pirro,
Gerhard Jakob,
Ulrich Nowak,
Mathias Kläui
Abstract:
Magnetic skyrmions, topologically-stabilized spin textures that emerge in magnetic systems, have garnered considerable interest due to a variety of electromagnetic responses that are governed by the topology. The topology that creates a microscopic gyrotropic force also causes detrimental effects, such as the skyrmion Hall effect, which is a well-studied phenomenon highlighting the influence of to…
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Magnetic skyrmions, topologically-stabilized spin textures that emerge in magnetic systems, have garnered considerable interest due to a variety of electromagnetic responses that are governed by the topology. The topology that creates a microscopic gyrotropic force also causes detrimental effects, such as the skyrmion Hall effect, which is a well-studied phenomenon highlighting the influence of topology on the deterministic dynamics and drift motion. Furthermore, the gyrotropic force is anticipated to have a substantial impact on stochastic diffusive motion; however, the predicted repercussions have yet to be demonstrated, even qualitatively. Here we demonstrate enhanced thermally-activated diffusive motion of skyrmions in a specifically designed synthetic antiferromagnet. Suppressing the effective gyrotropic force by tuning the angular momentum compensation leads to a more than 10 times enhanced diffusion coefficient compared to that of ferromagnetic skyrmions. Consequently, our findings not only demonstrate the gyro-force dependence of the diffusion coefficient but also enable ultimately energy-efficient unconventional stochastic computing.
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Submitted 11 September, 2023; v1 submitted 1 June, 2022;
originally announced June 2022.
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Anisotropic long-range spin transport in canted antiferromagnetic orthoferrite YFeO$_3$
Authors:
Shubhankar Das,
A. Ross,
X. X. Ma,
S. Becker,
C. Schmitt,
F. van Duijn,
F. Fuhrmann,
M. -A. Syskaki,
U. Ebels,
V. Baltz,
A. -L. Barra,
H. Y. Chen,
G. Jakob,
S. X. Cao,
J. Sinova,
O. Gomonay,
R. Lebrun,
M. Kläui
Abstract:
In antiferromagnets, the efficient propagation of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves propagate over long distances. Here, we report long-distance spin-transport in the antiferromagnetic orthoferrite YFeO$_3$, where a different transport mechanism is enabled by the co…
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In antiferromagnets, the efficient propagation of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves propagate over long distances. Here, we report long-distance spin-transport in the antiferromagnetic orthoferrite YFeO$_3$, where a different transport mechanism is enabled by the combined presence of the Dzyaloshinskii-Moriya interaction and externally applied fields. The magnon decay length is shown to exceed hundreds of nano-meters, in line with resonance measurements that highlight the low magnetic dam**. We observe a strong anisotropy in the magnon decay lengths that we can attribute to the role of the magnon group velocity in the propagation of spin-waves in antiferromagnets. This unique mode of transport identified in YFeO$_3$ opens up the possibility of a large and technologically relevant class of materials, i.e., canted antiferromagnets, for long-distance spin transport.
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Submitted 11 December, 2021;
originally announced December 2021.
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Strain-controlled Domain Wall injection into nanowires for sensor applications
Authors:
Giovanni Masciocchi,
Mouad Fattouhi,
Andreas Kehlberger,
Luis Lopez-Diaz,
Maria-Andromachi Syskaki,
Mathias Kläui
Abstract:
We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain, generated by substrate bending, induces in the material a uniaxial anisotropy due to magnetoelastic coupling. To compare the strain effects, $Co_{40}Fe_{40}B_{20}$,…
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We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain, generated by substrate bending, induces in the material a uniaxial anisotropy due to magnetoelastic coupling. To compare the strain effects, $Co_{40}Fe_{40}B_{20}$, $Ni$ and $Ni_{82}Fe_{18}$ samples with in-plane magnetization and different magnetoelastic coupling are deposited. In these samples, we measure the magnetic field required for the injection of a DW, by imaging differential contrast in a magneto-optical Kerr microscope. We find that strain increases the DW injection field, however, the switching mechanism depends strongly on the direction of the strain with respect to the wire axis. We observe that low magnetic anisotropy facilitates the creation of a domain wall at the junction between the pad and the wire, whereas a strain-induced magnetic easy axis significantly increases the coercive field of the nucleation pad. Additionally, we find that the effects of mechanical strain can be counteracted by a magnetic uniaxial anisotropy perpendicular to the strain-induced easy axis. In $Co_{40}Fe_{40}B_{20}$, we show that this anisotropy can be induced by annealing in a magnetic field. We perform micromagnetic simulations to support the interpretation of our experimental findings. Our simulations show that the above described observations can be explained by the effective anisotropy in the device. The anisotropy influences the switching mechanism in the nucleation pad as well as the pinning of the DW at the wire entrance. As the DW injection is a key operation for sensor performances, the observations show that strain is imposing a lower limit for the sensor field operating window.
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Submitted 31 August, 2021;
originally announced August 2021.
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Multiple magneto-ionic regimes in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/HfO$_{2}$
Authors:
R. Pachat,
D. Ourdani,
J. W. van der Jagt,
M. -A. Syskaki,
A. Di Pietro,
Y. Roussigné,
S. Ono,
M. S. Gabor,
M. Chérif,
G. Durin,
J. Langer,
M. Belmeguenai,
D. Ravelosona,
L. Herrera Diez
Abstract:
In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full rev…
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In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective dam** parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices.
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Submitted 12 May, 2021;
originally announced May 2021.
