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Beyond Triplet: Unconventional Superconductivity in a Spin-3/2 Topological Semimetal
Authors:
Hyunsoo Kim,
Kefeng Wang,
Yasuyuki Nakajima,
Rongwei Hu,
Steven Ziemak,
Paul Syers,
Limin Wang,
Halyna Hodovanets,
Jonathan D. Denlinger,
Philip M. R. Brydon,
Daniel F. Agterberg,
Makariy A. Tanatar,
Ruslan Prozorov,
Johnpierre Paglione
Abstract:
In all known fermionic superfluids, Cooper pairs are composed of spin-1/2 quasi-particles that pair to form either spin-singlet or spin-triplet bound states. The "spin" of a Bloch electron, however, is fixed by the symmetries of the crystal and the atomic orbitals from which it is derived, and in some cases can behave as if it were a spin-3/2 particle. The superconducting state of such a system al…
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In all known fermionic superfluids, Cooper pairs are composed of spin-1/2 quasi-particles that pair to form either spin-singlet or spin-triplet bound states. The "spin" of a Bloch electron, however, is fixed by the symmetries of the crystal and the atomic orbitals from which it is derived, and in some cases can behave as if it were a spin-3/2 particle. The superconducting state of such a system allows pairing beyond spin-triplet, with higher spin quasi-particles combining to form quintet or septet pairs. Here, we report evidence of unconventional superconductivity emerging from a spin-3/2 quasiparticle electronic structure in the half-Heusler semimetal YPtBi, a low-carrier density noncentrosymmetric cubic material with a high symmetry that preserves the $p$-like $j=3/2$ manifold in the Bi-based $Γ_8$ band in the presence of strong spin-orbit coupling. With a striking linear temperature dependence of the London penetration depth, the existence of line nodes in the superconducting order parameter $Δ$ is directly explained by a mixed-parity Cooper pairing model with high total angular momentum, consistent with a high-spin fermionic superfluid state. We propose a $\mathbf{k\cdot p}$ model of the $j=3/2$ fermions to explain how a dominant $J$=3 septet pairing state is the simplest solution that naturally produces nodes in the mixed even-odd parity gap. Together with the underlying topologically non-trivial band structure, the unconventional pairing in this system represents a truly novel form of superfluidity that has strong potential for leading the development of a new generation of topological superconductors.
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Submitted 24 July, 2017; v1 submitted 10 March, 2016;
originally announced March 2016.
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Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3
Authors:
Dohun Kim,
Paul Syers,
Nicholas P. Butch,
Johnpierre Paglione,
Michael S. Fuhrer
Abstract:
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near charge neutrality poin…
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We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near charge neutrality point and at low temperatures, the gate dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states, but is larger than expected at high electron do**, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ~ 0.5 x 1012 cm-2 per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.
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Submitted 11 March, 2015;
originally announced March 2015.
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Topological $R$PdBi half-Heusler semimetals: a new family of non-centrosymmetric magnetic superconductors
Authors:
Yasuyuki Nakajima,
Rongwei Hu,
Kevin Kirshenbaum,
Alex Hughes,
Paul Syers,
Xiangfeng Wang,
Kefeng Wang,
Renxiong Wang,
Shanta Saha,
Daniel Pratt,
Jeffrey W. Lynn,
Johnpierre Paglione
Abstract:
We report superconductivity and magnetism in a new family of topological semimetals, the ternary half Heusler compounds $R$PdBi ($R$ : rare earth). In this series, tuning of the rare earth $f$-electron component allows for simultaneous control of both lattice density via lanthanide contraction, as well as the strength of magnetic interaction via de Gennes scaling, allowing for a unique tuning of b…
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We report superconductivity and magnetism in a new family of topological semimetals, the ternary half Heusler compounds $R$PdBi ($R$ : rare earth). In this series, tuning of the rare earth $f$-electron component allows for simultaneous control of both lattice density via lanthanide contraction, as well as the strength of magnetic interaction via de Gennes scaling, allowing for a unique tuning of both the normal state band inversion strength, superconducting pairing and magnetically ordered ground states. Antiferromagnetism with ordering vector (0.5,0.5,0.5) occurs below a Neéel temperature that scales with de Gennes factor $dG$, while a superconducting transition is simultaneously linearly suppressed. With superconductivity appearing in a system with non-centrosymmetric crystallographic symmetry, the possibility of spin-triplet Cooper pairing with non-trivial topology analogous to that predicted for the normal state electronic structure provides a unique and rich opportunity to realize both predicted and new exotic excitations in topological materials.
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Submitted 8 June, 2015; v1 submitted 16 January, 2015;
originally announced January 2015.
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Ambipolar surface state transport in non-metallic stoichiometric Bi$_2$Se$_3$ crystals
Authors:
Paul Syers,
Johnpierre Paglione
Abstract:
Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-do** effect caused by selenium vacancies, whose extra electrons shift the chemical potential into the bulk conduction band. We report a new synthesis method for achieving stoichiometric Bi$_2$S…
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Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-do** effect caused by selenium vacancies, whose extra electrons shift the chemical potential into the bulk conduction band. We report a new synthesis method for achieving stoichiometric Bi$_2$Se$_3$ crystals that exhibit nonmetallic behavior in electrical transport down to low temperatures. Hall effect measurements indicate the presence of both electron- and hole-like carriers, with the latter identified with surface state conduction and the achievement of ambipolar transport in bulk Bi$_2$Se$_3$ crystals without gating techniques. With carrier mobilities surpassing the highest values yet reported for topological surface states in this material, the achievement of ambipolar transport via upward band bending is found to provide a key method to advancing the potential of this material for future study and applications.
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Submitted 20 July, 2015; v1 submitted 3 December, 2014;
originally announced December 2014.
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Tuning bulk and surface conduction in topological Kondo insulator SmB6
Authors:
Paul Syers,
Dohun Kim,
Michael S. Fuhrer,
Johnpierre Paglione
Abstract:
Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we sho…
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Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.
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Submitted 15 August, 2014; v1 submitted 14 August, 2014;
originally announced August 2014.
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One-dimensional edge state transport in a topological Kondo insulator
Authors:
Yasuyuki Nakajima,
Paul Syers,
Xiangfeng Wang,
Renxiong Wang,
Johnpierre Paglione
Abstract:
Topological insulators, with metallic boundary states protected against time-reversal-invariant perturbations, are a promising avenue for realizing exotic quantum states of matter including various excitations of collective modes predicted in particle physics, such as Majorana fermions and axions. According to theoretical predictions, a topological insulating state can emerge from not only a weakl…
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Topological insulators, with metallic boundary states protected against time-reversal-invariant perturbations, are a promising avenue for realizing exotic quantum states of matter including various excitations of collective modes predicted in particle physics, such as Majorana fermions and axions. According to theoretical predictions, a topological insulating state can emerge from not only a weakly interacting system with strong spin-orbit coupling, but also in insulators driven by strong electron correlations. The Kondo insulator compound SmB6 is an ideal candidate for realizing this exotic state of matter, with hybridization between itinerant conduction electrons and localized $f$-electrons driving an insulating gap and metallic surface states at low temperatures. Here we exploit the existence of surface ferromagnetism in SmB6 to investigate the topological nature of metallic surface states by studying magnetotransport properties at very low temperatures. We find evidence of one-dimensional surface transport with a quantized conductance value of $e^2/h$ originating from the chiral edge channels of ferromagnetic domain walls, providing strong evidence that topologically non-trivial surface states exist in SmB6.
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Submitted 15 September, 2015; v1 submitted 20 December, 2013;
originally announced December 2013.
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Polarity-driven surface metallicity in SmB$_6$
Authors:
Z. -H. Zhu,
A. Nicolaou,
G. Levy,
N. P. Butch,
P. Syers,
X. F. Wang,
J. Paglione,
G. A. Sawatzky,
I. S. Elfimov,
A. Damascelli
Abstract:
By a combined angle-resolved photoemission spectroscopy and density functional theory study, we discover that the surface metallicity is polarity-driven in SmB$_6$. Two surface states, not accounted for by the bulk band structure, are reproduced by slab calculations for coexisting B$_6$ and Sm surface terminations. Our analysis reveals that a metallic surface state stems from an unusual property,…
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By a combined angle-resolved photoemission spectroscopy and density functional theory study, we discover that the surface metallicity is polarity-driven in SmB$_6$. Two surface states, not accounted for by the bulk band structure, are reproduced by slab calculations for coexisting B$_6$ and Sm surface terminations. Our analysis reveals that a metallic surface state stems from an unusual property, generic to the (001) termination of all hexaborides: the presence of boron $2p$ dangling bonds, on a polar surface. The discovery of polarity-driven surface metallicity sheds new light on the 40-year old conundrum of the low-temperature residual conductivity of SmB$_6$, and raises a fundamental question in the field of topological Kondo insulators regarding the interplay between polarity and nontrivial topological properties.
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Submitted 19 November, 2013; v1 submitted 11 September, 2013;
originally announced September 2013.
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Pressure-Induced Unconventional Superconducting Phase in the Topological Insulator Bi2Se3
Authors:
K. Kirshenbaum,
P. S. Syers,
A. P. Hope,
N. P. Butch,
J. R. Jeffries,
S. T. Weir,
J. J. Hamlin,
M. B. Maple,
Y. K. Vohra,
J. Paglione
Abstract:
Simultaneous low-temperature electrical resistivity and Hall effect measurements were performed on single-crystalline Bi2Se3 under applied pressures up to 50 GPa. As a function of pressure, superconductivity is observed to onset above 11 GPa with a transition temperature Tc and upper critical field Hc2 that both increase with pressure up to 30 GPa, where they reach maximum values of 7 K and 4 T, r…
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Simultaneous low-temperature electrical resistivity and Hall effect measurements were performed on single-crystalline Bi2Se3 under applied pressures up to 50 GPa. As a function of pressure, superconductivity is observed to onset above 11 GPa with a transition temperature Tc and upper critical field Hc2 that both increase with pressure up to 30 GPa, where they reach maximum values of 7 K and 4 T, respectively. Upon further pressure increase, Tc remains anomalously constant up to the highest achieved pressure. Conversely, the carrier concentration increases continuously with pressure, including a tenfold increase over the pressure range where Tc remains constant. Together with a quasi-linear temperature dependence of Hc2 that exceeds the orbital and Pauli limits, the anomalously stagnant pressure dependence of Tc points to an unconventional pressure-induced pairing state in Bi2Se3 that is unique among the superconducting topological insulators.
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Submitted 6 August, 2013; v1 submitted 26 February, 2013;
originally announced February 2013.
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Layer-by-layer entangled spin-orbital texture of the topological surface state in Bi2Se3
Authors:
Z. -H. Zhu,
C. N. Veenstra,
G. Levy,
A. Ubaldini,
P. Syers,
N. P. Butch,
J. Paglione,
M. W. Haverkort,
I. S. Elfimov,
A. Damascelli
Abstract:
We study Bi2Se3 by polarization-dependent angle-resolved photoemission spectroscopy (ARPES) and density-functional theory slab calculations. We find that the surface state Dirac fermions are characterized by a layer-dependent entangled spin-orbital texture, which becomes apparent through quantum interference effects. This explains the discrepancy between the spin polarization from spin-resovled AR…
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We study Bi2Se3 by polarization-dependent angle-resolved photoemission spectroscopy (ARPES) and density-functional theory slab calculations. We find that the surface state Dirac fermions are characterized by a layer-dependent entangled spin-orbital texture, which becomes apparent through quantum interference effects. This explains the discrepancy between the spin polarization from spin-resovled ARPES - ranging from 20 to 85% - and the 100% value assumed in phenomenological models. It also suggests a way to probe the intrinsic spin texture of topological insulators, and to continuously manipulate the spin polarization of photoelectrons and photocurrents all the way from 0 to +/-100% by an appropriate choice of photon energy, linear polarization, and angle of incidence.
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Submitted 21 May, 2013; v1 submitted 19 December, 2012;
originally announced December 2012.
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Coherent Topological Transport on the Surface of Bi2Se3
Authors:
Dohun Kim,
Paul Syers,
Nicholas P. Butch,
Johnpierre Paglione,
Michael S. Fuhrer
Abstract:
The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in the symplectic universality class and uniquely among 2D systems remains metallic and cannot be localized by (time-reversal symmetric) disorder. However, in fini…
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The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in the symplectic universality class and uniquely among 2D systems remains metallic and cannot be localized by (time-reversal symmetric) disorder. However, in finite-size samples inter-surface coupling can destroy the topological protection. The question arises: At what size can a thin TI sample be treated as having decoupled topological surface states? We show that weak anti-localization(WAL) is extraordinarily sensitive to sub-meV coupling between top and bottom topological surfaces, and the surfaces of a TI film may be coherently coupled even for thicknesses as large as 12 nm. For thicker films we observe the signature of a true 2D topological metal: perfect weak anti-localization in quantitative agreement with two decoupled surfaces in the symplectic symmetry class.
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Submitted 11 December, 2012;
originally announced December 2012.
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Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6
Authors:
Xiaohang Zhang,
N. P. Butch,
P. Syers,
S. Ziemak,
Richard L. Greene,
J. Paglione
Abstract:
As an exemplary Kondo insulator, SmB6 has been studied for several decades; however, direct evidence for the development of the Kondo coherent state and the evolution of the electronic structure in the material has not been obtained due to the rather complicated electronic and thermal transport behavior. Recently, these open questions attracted increasing attention as the emergence of a time-rever…
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As an exemplary Kondo insulator, SmB6 has been studied for several decades; however, direct evidence for the development of the Kondo coherent state and the evolution of the electronic structure in the material has not been obtained due to the rather complicated electronic and thermal transport behavior. Recently, these open questions attracted increasing attention as the emergence of a time-reversal invariant topological surface state in the Kondo insulator has been suggested. Here, we use point-contact spectroscopy to reveal the temperature dependence of the electronic states in SmB6. We demonstrate that SmB6 is a model Kondo insulator: below 100 K, the conductance spectra reflect the Kondo hybridization of Sm ions, but below ~ 30 K, signatures of inter-ion correlation effects clearly emerge. Moreover, we find evidence that the low-temperature insulating state of this exemplary Kondo lattice compound harbors conduction states on the surface, in support of predictions of nontrivial topology in Kondo insulators.
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Submitted 29 January, 2013; v1 submitted 23 November, 2012;
originally announced November 2012.
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Magnetothermoelectric properties of Bi2Se3
Authors:
B. Fauqué,
N. P. Butch,
P. Syers,
J. Paglione,
S. Wiedmann,
A. Collaudin,
B. Grena,
U. Zeitler,
K. Behnia
Abstract:
We present a study of entropy transport in Bi2Se3 at low temperatures and high magnetic fields. In the zero-temperature limit, the magnitude of the Seebeck coefficient quantitatively tracks the Fermi temperature of the 3D Fermi surface at Γ-point as the carrier concentration changes by two orders of magnitude (10$^{17}$ to 10$^{19}$cm$^{-3}$). In high magnetic fields, the Nernst response displays…
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We present a study of entropy transport in Bi2Se3 at low temperatures and high magnetic fields. In the zero-temperature limit, the magnitude of the Seebeck coefficient quantitatively tracks the Fermi temperature of the 3D Fermi surface at Γ-point as the carrier concentration changes by two orders of magnitude (10$^{17}$ to 10$^{19}$cm$^{-3}$). In high magnetic fields, the Nernst response displays giant quantum oscillations indicating that this feature is not exclusive to compensated semi-metals. A comprehensive analysis of the Landau Level spectrum firmly establishes a large $g$-factor in this material and a substantial decrease of the Fermi energy with increasing magnetic field across the quantum limit. Thus, the presence of bulk carriers significantly affects the spectrum of the intensively debated surface states in Bi2Se3 and related materials.
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Submitted 30 July, 2013; v1 submitted 6 September, 2012;
originally announced September 2012.
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Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime
Authors:
Dohun Kim,
Qiuzi Li,
Paul Syers,
Nicholas P. Butch,
Johnpierre Paglione,
S. Das Sarma,
Michael S. Fuhrer
Abstract:
We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type s…
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We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF = 4.7 Å-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm2/Vs.
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Submitted 23 October, 2012; v1 submitted 24 May, 2012;
originally announced May 2012.
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Topological insulator quantum dot with tunable barriers
Authors:
Sungjae Cho,
Dohun Kim,
Paul Syers,
Nicholas P. Butch,
Johnpierre Paglione,
Michael S. Fuhrer
Abstract:
Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states.
Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states.
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Submitted 18 January, 2012;
originally announced January 2012.
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High pressure transport properties of the topological insulator Bi2Se3
Authors:
J. J. Hamlin,
J. R. Jeffries,
N. P. Butch,
P. Syers,
D. A. Zocco,
S. T. Weir,
Y. K. Vohra,
J. Paglione,
M. B. Maple
Abstract:
We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 towards increasingly insulating behavior and then, at highe…
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We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 towards increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3.
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Submitted 31 October, 2011;
originally announced November 2011.
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Superconductivity in the topological semimetal YPtBi
Authors:
Nicholas P. Butch,
P. Syers,
Kevin Kirshenbaum,
Andrew P. Hope,
Johnpierre Paglione
Abstract:
The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivity below a critical temperature T_c = 0.77 K with a zero-temperature upper critical field H_c2(0) = 1.5 T. Magnetoresistance and Hall measurements support theoretical predictions that this material is a topologically nontrivial semimetal having a surprisingly low positive charge carrier density of 2 x 10^18 cm^-3. Unconvent…
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The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivity below a critical temperature T_c = 0.77 K with a zero-temperature upper critical field H_c2(0) = 1.5 T. Magnetoresistance and Hall measurements support theoretical predictions that this material is a topologically nontrivial semimetal having a surprisingly low positive charge carrier density of 2 x 10^18 cm^-3. Unconventional linear magnetoresistance and beating in Shubnikov-de Haas oscillations point to spin-orbit split Fermi surfaces. The sensitivity of magnetoresistance to surface roughness suggests a possible contribution from surface states. The combination of noncentrosymmetry and strong spin-orbit coupling in YPtBi presents a promising platform for the investigation of topological superconductivity.
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Submitted 4 December, 2011; v1 submitted 5 September, 2011;
originally announced September 2011.
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Evidence for Dirac Nodes from Quantum Oscillations in SrFe$_2$As$_2$
Authors:
Mike Sutherland,
D. J. Hills,
B. S. Tan,
M. M. Altarawneh,
N. Harrison,
J. Gillett,
E. C. T. O'Farrell,
T. M. Benseman,
I. Kokanovic,
P. Syers,
J. R. Cooper,
Suchitra E. Sebastian
Abstract:
We present a detailed study of quantum oscillations in the antiferromagnetically ordered pnictide compound SrFe$_2$As$_2$ as the angle between the applied magnetic field and crystalline axes is varied. Our measurements were performed on high quality single crystals in a superconducting magnet, and in pulsed magnetic fields up to 60 T, allowing us to observe orbits from several small Fermi surface…
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We present a detailed study of quantum oscillations in the antiferromagnetically ordered pnictide compound SrFe$_2$As$_2$ as the angle between the applied magnetic field and crystalline axes is varied. Our measurements were performed on high quality single crystals in a superconducting magnet, and in pulsed magnetic fields up to 60 T, allowing us to observe orbits from several small Fermi surface pockets. We extract the cyclotron effective mass $m^{\star}$ and frequency $F$ for these orbits and track their values as the field is rotated away from the c-axis. While a constant ratio of $m^{\star}/F$ is observed for one orbit as expected for a parabolic band, a clear deviation is observed for another. We conclude that this deviation points to an orbit derived from a band with Dirac dispersion near the Fermi level.
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Submitted 8 July, 2011;
originally announced July 2011.
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Rashba spin-splitting control at the surface of the topological insulator Bi2Se3
Authors:
Z. -H. Zhu,
G. Levy,
B. Ludbrook,
C. N. Veenstra,
J. A. Rosen,
R. Comin,
D. Wong,
P. Dosanjh,
A. Ubaldini,
P. Syers,
N. P. Butch,
J. Paglione,
I. S. Elfimov,
A. Damascelli
Abstract:
The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome via in-situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable,…
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The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome via in-situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable, reversible, and highly stable spin splitting. Ab-initio slab calculations reveal that these Rashba state are derived from the 5QL quantum-well states. While the K-induced potential gradient enhances the spin splitting, this might be already present for pristine surfaces due to the symmetry breaking of the vacuum-solid interface.
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Submitted 2 June, 2011;
originally announced June 2011.
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Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Authors:
Dohun Kim,
Sungjae Cho,
Nicholas P. Butch,
Paul Syers,
Kevin Kirshenbaum,
Shaffique Adam,
Johnpierre Paglione,
Michael S. Fuhrer
Abstract:
The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an…
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The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an insulating bulk. Here we show that the surfaces of thin (<10 nm), low-doped Bi2Se3 (\approx10^17/cm3) crystals are strongly electrostatically coupled, and a gate electrode can completely remove bulk charge carriers and bring both surfaces through the Dirac point simultaneously. We observe clear surface band conduction with linear Hall resistivity and well-defined ambipolar field effect, as well as a charge-inhomogeneous minimum conductivity region. A theory of charge disorder in a Dirac band explains well both the magnitude and the variation with disorder strength of the minimum conductivity (2 to 5 e^2/h per surface) and the residual (puddle) carrier density (0.4 x 10^12 cm^-2 to 4 x 10^12 cm^-2). From the measured carrier mobilities 320 cm^2/Vs to 1,500 cm^2/Vs, the charged impurity densities 0.5 x 10^13 cm^-2 to 2.3 x 10^13 cm^-2 are inferred. They are of a similar magnitude to the measured do** levels at zero gate voltage (1 x 10^13 cm^-2 to 3 x 10^13 cm^-2), identifying dopants as the charged impurities.
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Submitted 24 January, 2012; v1 submitted 6 May, 2011;
originally announced May 2011.
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Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3
Authors:
Nardeep Kumar,
Brian A. Ruzicka,
N. P. Butch,
P. Syers,
K. Kirshenbaum,
J. Paglione,
Hui Zhao
Abstract:
Carrier and phonon dynamics in Bi2Se3 crystals are studied by a spatially resolved ultrafast pump-probe technique. Pronounced oscillations in differential reflection are observed with two distinct frequencies, and are attributed to coherent optical and acoustic phonons, respectively. The rising time of the signal indicates that the thermalization and energy relaxation of hot carriers are both sub-…
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Carrier and phonon dynamics in Bi2Se3 crystals are studied by a spatially resolved ultrafast pump-probe technique. Pronounced oscillations in differential reflection are observed with two distinct frequencies, and are attributed to coherent optical and acoustic phonons, respectively. The rising time of the signal indicates that the thermalization and energy relaxation of hot carriers are both sub-ps in this material. We found that the thermalization and relaxation time decreases with the carrier density. The expansion of the differential reflection profile allows us to estimate an ambipolar carrier diffusion coefficient on the order of 500 square centimeters per second. A long-term slow expansion of the profile shows a thermal diffusion coefficient of 1.2 square centimeters per second.
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Submitted 2 April, 2011;
originally announced April 2011.
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Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3
Authors:
G. S. Jenkins,
A. B. Sushkov,
D. C. Schmadel,
N. P. Butch,
P. Syers,
J. Paglione,
H. D. Drew
Abstract:
We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a…
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We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a small mass and surprisingly large associated spectral weight quantitatively fit all data. However, carrier concentration inhomogeneity has not been ruled out. A method employing a gate is shown to be promising for separating surface from bulk effects.
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Submitted 26 July, 2010; v1 submitted 26 July, 2010;
originally announced July 2010.
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Dimensional Tuning of the Magnetic-Structural Transition in A(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (A=Sr,Ba)
Authors:
Jack Gillett,
Sitikantha D. Das,
Paul Syers,
Alison K. T. Ming,
Jose I. Espeso,
Chiara M. Petrone,
Suchitra E. Sebastian
Abstract:
A phase diagram of superconducting Sr(Fe$_{1-x}$Co$_x$)$_2$As$_2$ as a function of do** (x) is determined by a series of thermodynamic and transport measurements on single crystals. On comparison with a similar phase diagram for Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (Co-doped Ba122), we find that the increased dimensionality of Co-doped Sr122 results in a single first-order-like transition where the ma…
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A phase diagram of superconducting Sr(Fe$_{1-x}$Co$_x$)$_2$As$_2$ as a function of do** (x) is determined by a series of thermodynamic and transport measurements on single crystals. On comparison with a similar phase diagram for Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (Co-doped Ba122), we find that the increased dimensionality of Co-doped Sr122 results in a single first-order-like transition where the magnetic and structural transitions coincide, unlike the case of Co-doped Ba122 that exhibits split quasicontinuous magnetic and structural transitions. We relate this dimensionally-tuned splitting in the magnetic and structural transitions to the relative size of superconducting temperatures in these materials.
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Submitted 8 May, 2010;
originally announced May 2010.
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Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
Authors:
Nicholas P. Butch,
Kevin Kirshenbaum,
Paul Syers,
Andrei B. Sushkov,
Gregory S. Jenkins,
H. Dennis Drew,
Johnpierre Paglione
Abstract:
While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of Bi2Se3 with carrier densities approaching 10^16 cm^-3 and very high mobilities exceeding 2 m^2 V^-1 s^-1 have been…
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While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of Bi2Se3 with carrier densities approaching 10^16 cm^-3 and very high mobilities exceeding 2 m^2 V^-1 s^-1 have been studied. A comprehensive analysis of Shubnikov de Haas oscillations, Hall effect, and optical reflectivity indicates that the measured electrical transport can be attributed solely to bulk states, even at 50 mK at low Landau level filling factor, and in the quantum limit. The absence of a significant surface contribution to bulk conduction demonstrates that even in very clean samples, the surface mobility is lower than that of the bulk, despite its topological protection.
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Submitted 1 June, 2010; v1 submitted 11 March, 2010;
originally announced March 2010.
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Characterization of chaotic motion in a rotating drum
Authors:
James E. Davidheiser,
Paul Syers,
P. N. Segrè,
Eric R. Weeks
Abstract:
Numerous studies have demonstrated the potential for simple fluid plus particle systems to produce complicated dynamical behavior. In this work, we study a horizontal rotating drum filled with pure glycerol and three large, heavy spheres. The rotation of the drum causes the spheres to cascade and tumble and thus interact with each other. We find several different behaviors of the spheres dependi…
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Numerous studies have demonstrated the potential for simple fluid plus particle systems to produce complicated dynamical behavior. In this work, we study a horizontal rotating drum filled with pure glycerol and three large, heavy spheres. The rotation of the drum causes the spheres to cascade and tumble and thus interact with each other. We find several different behaviors of the spheres depending on the drum rotation rate. Simpler states include the spheres remaining well separated, or states where two or all three of the spheres come together and cascade together. We also see two more complex states, where two or three of the spheres move chaotically. We characterize these chaotic states and find that in many respects they are quite unpredictable. This experiment serves as a simple model system to demonstrate chaotic behavior in fluid dynamical systems.
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Submitted 10 July, 2009;
originally announced July 2009.
