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Atomic Layer Deposition of Yttrium Iron Garnet Thin Films for 3D Magnetic Structures
Authors:
M. Lammel,
D. Scheffler,
D. Pohl,
P. Swekis,
S. Reitzig,
H. Reichlova,
R. Schlitz,
K. Geishendorf,
L. Siegl,
B. Rellinghaus,
L. M. Eng,
K. Nielsch,
S. T. B. Goennenwein,
A. Thomas
Abstract:
A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do…
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A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do not allow to study the magnetic response of the system separately from the electronic one. In the field of spintronics, the prototypical material used for such experiments is the ferrimagnetic insulator yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG). YIG is one of the best materials especially for magnonic studies due to its low Gilbert dam**. Here, we report the first successful fabrication of YIG thin films via atomic layer deposition. To that end we utilize a supercycle approach based on the combination of sub-nanometer thin layers of the binary systems Fe$_2$O$_3$ and Y$_2$O$_3$ in the correct atomic ratio on Y$_3$Al$_5$O$_{12}$ substrates with a subsequent annealing step. Our process is robust against typical growth-related deviations, ensuring a good reproducibility. The ALD-YIG thin films exhibit a good crystalline quality as well as magnetic properties comparable to other deposition techniques. One of the outstanding characteristics of atomic layer deposition is its ability to conformally coat arbitrarily-shaped substrates. ALD hence is the ideal deposition technique to grant an extensive freedom in choosing the shape of the magnetic system. The atomic layer deposition of YIG enables the fabrication of novel three dimensional magnetic nanostructures, which in turn can be utilized for experimentally investigating the phenomena predicted in those structures.
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Submitted 18 January, 2022; v1 submitted 20 April, 2021;
originally announced April 2021.
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Hard Magnetic Topological Semimetals in XPt3: Harmony of Berry Curvature
Authors:
Anastasios Markou,
Jacob Gayles,
Elena Derunova,
Peter Swekis,
Jonathan Noky,
Liguo Zhang,
Mazhar N. Ali,
Yan Sun,
Claudia Felser
Abstract:
Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped noda…
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Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multiband system. We calculate a maximum AHE of 1965 S/cm in the CrPt3 by a state-of-the-art first principle electronic structure. We have grown high-quality thin films by magnetron sputtering and measured a robust AHE of 1750 S/cm for different sputtering growth conditions. Additionally, the cubic films display a hard magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.
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Submitted 27 August, 2020;
originally announced August 2020.
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Role of magnetic exchange interactions in chiral-type Hall effects of epitaxial Mn$_{x}$PtSn films
Authors:
Peter Swekis,
Jacob Gayles,
Dominik Kriegner,
Gerhard H. Fecher,
Yan Sun,
Sebastian T. B. Goennenwein,
Claudia Felser,
Anastasios Markou
Abstract:
Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputteri…
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Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputtering. The competition of the magnetic exchange interactions determines the finite temperature magnetic texture and thereby the chiral-type Hall effects in external magnetic fields. We investigate the magnetic and transport properties as a function of magnetic field and temperature. We focus on the anomalous and chiral-type Hall effects and the behavior of the dc-magnetization, in relation to chiral spin textures. We further determine the stable crystal phase for a relative Mn concentration between 1.5 and 1.85 in the $I\overline{4}2d$ structure. We observe a spin-reorientation transition in all compounds studied, which is due to the competition of exchange interactions on different Mn sublattices. We discuss our results in terms of exchange interactions and compare them with theoretical atomistic spin calculations.
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Submitted 27 July, 2020;
originally announced July 2020.
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Origin of the quasi-quantized Hall effect in ZrTe5
Authors:
Stanislaw Galeski,
Toni Ehmcke,
Rafal Wawrzynczak,
Pedro Mercado Lozano,
Kyungjune Cho,
Ankit Sharma,
Souvik Das,
Felix Kuster,
Paolo Sessi,
Manuel Brando,
Robert Kuchler,
Anastasios Markou,
Markus Konig,
Claudia Felser,
Yasmine Sassa,
Qiang Li,
Genda Gu,
Peter Swekis,
Martin Zimmermann,
Oleh Ivashko,
Dennis I. Gorbunov,
Sergei Zherlitsyn,
Tobias Forster,
Stuart Parkin,
Joachim Wosnitza
, et al. (2 additional authors not shown)
Abstract:
The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, thermoelectric…
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The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, thermoelectric and charge transport measurements on ZrTe5 in the quantum Hall regime. The measured thermodynamic properties: magnetization and ultrasound propagation, show no signatures of a Fermi surface instability, consistent with in-field single crystal X-ray diffraction. Instead, a direct comparison of the experimental data with linear response calculations based on an effective 3D Dirac Hamiltonian suggests that the quasi-quantization of the observed Hall response is an intrinsic property of the 3D electronic structure. Our findings render the Hall effect in ZrTe5 a truly 3D counterpart of the QHE in 2D systems.
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Submitted 22 February, 2021; v1 submitted 26 May, 2020;
originally announced May 2020.
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Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films
Authors:
Gyu-Hyeon Park,
Helena Reichlova,
Richard Schlitz,
Michaela Lammel,
Anastasios Markou,
Peter Swekis,
Philipp Ritzinger,
Dominik Kriegner,
Jonathan Noky,
Jacob Gayles,
Yan Sun,
Claudia Felser,
Kornelius Nielsch,
Sebastian T. B. Goennenwein,
Andy Thomas
Abstract:
We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistiv…
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We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.
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Submitted 7 April, 2020; v1 submitted 23 September, 2019;
originally announced September 2019.
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All Electrical Access to Topological Transport Features in Mn$_{1.8}$PtSn Films
Authors:
Richard Schlitz,
Peter Swekis,
Anastasios Markou,
Helena Reichlova,
Michaela Lammel,
Jacob Gayles,
Andy Thomas,
Kornelius Nielsch,
Claudia Felser,
Sebastian T. B. Goennenwein
Abstract:
The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topolog…
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The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn$_{1.8}$PtSn below the spin reorientation temperature $T_\mathrm{SR} \approx 190$K. The magnitude of the topological Hall effect $ρ_\mathrm{xy}^\mathrm{T} = 8$ n$Ω$m is close to the value reported in bulk Mn$_2$PtSn, and the topological Nernst effect $S_\mathrm{xy}^\mathrm{T} = 115$ nV K$^{-1}$ measured in the same microstructure has a similar magnitude as reported for bulk MnGe ($S_\mathrm{xy}^\mathrm{T} \sim 150$ nV K$^{-1}$), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations.
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Submitted 4 April, 2020; v1 submitted 19 December, 2018;
originally announced December 2018.
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Topological Hall effect in thin films of Mn$_{1.5}$PtSn
Authors:
Peter Swekis,
Anastasios Markou,
Dominik Kriegner,
Jacob Gayles,
Richard Schlitz,
Walter Schnelle,
Sebastian T. B. Goennenwein,
Claudia Felser
Abstract:
Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μ_{0}H \approx 4~$T below the spin reorientati…
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Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μ_{0}H \approx 4~$T below the spin reorientation transition temperature, $T_{s}=185$~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between $0.76~μΩ$cm and $1.55~μΩ$cm at 150~K.
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Submitted 18 October, 2018;
originally announced October 2018.
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Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa
Authors:
Helena Reichlova,
Richard Schlitz,
Sebastian Beckert,
Peter Swekis,
Anastasios Markou,
Yi-Cheng Chen,
Savio Fabretti,
Gyu Hyeon Park,
Anna Niemann,
Shashank Sudheendra,
Andy Thomas,
Kornelius Nielsch,
Claudia Felser,
Sebastian T. B. Goennenwein
Abstract:
The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip the…
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The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$μ$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices.
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Submitted 17 July, 2018;
originally announced July 2018.
